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91. 发明授权

US5865897A Method of producing film of nitrogen-doped II-VI group compound semiconductor 失效
标题翻译：氮掺杂II-VI族化合物半导体膜的制备方法
公开(公告)号：US5865897A
公开(公告)日：1999-02-02
申请号：US596384
申请日：1996-02-09
申请人： Satoshi Ito , Satoshi Taniguchi , Masao Ikeda , Hiroyuki Okuyama , Hironori Tsukamoto , Masaharu Nagai , Koshi Tamamura
发明人： Satoshi Ito , Satoshi Taniguchi , Masao Ikeda , Hiroyuki Okuyama , Hironori Tsukamoto , Masaharu Nagai , Koshi Tamamura
IPC分类号： C23C14/00 , C23C14/06 , C30B23/02 , H01L21/363 , H01L21/365 , H01L33/00 , H01L33/28 , H05H13/00
CPC分类号： H01L33/285 , C23C14/0026 , C23C14/0629 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02551 , H01L21/0256 , H01L21/02579 , H01L21/02631 , H01L33/0087
摘要： A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II-VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.
摘要翻译： PCT No.PCT / JP95 / 00854 Sec。 371日期1996年2月9日 102（e）日期1996年2月9日PCT提交1995年4月28日PCT公布。公开号WO95 / 34093 日期1995年12月14日属于周期表II族的至少一种元素的II-VI族化合物半导体的膜和属于周期表的VI族的元素中的至少一种沉积在基板上。当膜沉积在衬底上时，将激发态的氮等离子体施加到衬底上，同时通过带电粒子去除装置从所述等离子体中除去带电粒子。氮掺杂的II-VI族化合物半导体的沉积膜具有增加的活性氮原子百分比和改善的结晶度。

92. 发明授权

US5780322A Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser 失效
标题翻译：用于生长含有镉的II-VI化合物半导体层的方法和用于制造半导体激光器的方法
公开(公告)号：US5780322A
公开(公告)日：1998-07-14
申请号：US722615
申请日：1996-09-27
申请人： Koshi Tamamura , Hironori Tsukamoto , Masao Ikeda
发明人： Koshi Tamamura , Hironori Tsukamoto , Masao Ikeda
IPC分类号： C30B23/02 , C30B29/48 , H01L21/203 , H01L21/363 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/28 , H01L33/30 , H01S5/00 , H01S5/347 , H01L21/20
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02477 , H01L21/02557 , H01L21/0256 , H01L21/02631 , H01S5/347 , H01S2304/02 , Y10S438/93
摘要： A method for growing a II-VI compound semiconductor layer containing Cd, such as Zn.sub.1-x Cd.sub.x Se, by a molecular beam epitaxy method is disclosed. During the growth, the ratio of the intensity of molecular beams of a group VI element to the intensity of molecular beams of a group II element in terms of intensities of molecular beams actually irradiated onto a substrate, namely, the substantial VI/II ratio, is controlled preferably in the range from 0.7 to 1.3, to increase the Cd incorporating efficiency into the grown layer sufficiently high.
摘要翻译：公开了通过分子束外延法生长含有Cd的诸如Zn1-xCdxSe的II-VI化合物半导体层的方法。在生长过程中，VI族元素的分子束强度与II族元素的分子束强度之比（实际照射到基片上的分子束的强度）即VI / II比，控制优选在0.7至1.3的范围内，以将Cd掺入到生长层中的效率足够高。

93. 发明授权

US5489577A Semi-solid pharmaceutical agent and process for producing the same 失效
标题翻译：半固体药剂及其制备方法
公开(公告)号：US5489577A
公开(公告)日：1996-02-06
申请号：US266597
申请日：1994-06-28
申请人： Masao Ikeda , Tomoki Tatefuji , Hiroshi Yamauchi
发明人： Masao Ikeda , Tomoki Tatefuji , Hiroshi Yamauchi
IPC分类号： A61K9/00 , A61K9/02 , A61K9/06 , A61K38/00 , A61K38/22 , A61K47/26
CPC分类号： A61K9/02 , A61K47/26 , A61K9/0014 , A61K9/06 , Y10S424/15 , Y10S514/944 , Y10S514/967 , Y10S514/969 , Y10S514/97
摘要： Disclosed is a semi-solid pharmaceutical agent containing a stabilized proteinaceous bioactive substance prepared by successively mixing an oligosaccharide and an aqueous solution of a proteinaceous bioactive substance, and kneading the resultant solids with an oil or fat base. The pharmaceutical handles with ease because it is readily administered to the body through percutaneous and permucosal route which are safer and less in pain administration routes than other conventional administrations.
摘要翻译：公开了含有稳定的蛋白质生物活性物质的半固体药剂，其通过将寡糖和蛋白质生物活性物质的水溶液连续混合，并将所得固体与油或脂肪基质捏合而制备。药物手柄容易，因为它通过经皮和粘膜途径容易地施用于身体，其比其他常规给药更安全和更少的疼痛管理途径。

94. 发明授权

US5481558A Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US5481558A
公开(公告)日：1996-01-02
申请号：US261150
申请日：1994-06-14
申请人： Masao Ikeda , Toyoharu Ohata
发明人： Masao Ikeda , Toyoharu Ohata
IPC分类号： H01S5/00 , H01S5/327 , H01S3/19
CPC分类号： H01L33/0087 , H01S5/327
摘要： According to the present invention, a p-type ZnSe or p-type ZnSSe buffer layer is formed on a p-type GaAs substrate through at least single layer made of AlGaInP-based material and a II/VI-compound laser structure is formed on the p-type ZnSe or p-type ZnSSe buffer layer. Further, an AlGaAs-based buffer layer is provided between the substrate and the AlGaInP-based buffer layer. Further, the AlGaAs-based buffer layer has a composition expressed as Al.sub.0.5 Ga.sub.0.4 As and the AlGaInP-based buffer layer has a composition expressed as Al.sub.0.5 In.sub.0.5 P. Furthermore, a composition ratio x of Al in a buffer layer expressed as Al.sub.x Ga.sub.1-x As is modulated from 0 to 0.6 and a composition ratio y of Al in a buffer layer expressed as (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P is modulated from 0 to 1. According to the present invention, an operation voltage of the II/VI-compound semiconductor laser can be reduced and the green or blue color semiconductor laser of low operation voltage can be obtained. This semiconductor laser can continuously be operated at room temperature and also operated with a long life span.
摘要翻译：根据本发明，通过至少由AlGaInP基材料制成的单层，在p型GaAs衬底上形成p型ZnSe或p型ZnSSe缓冲层，并且将II / VI复合激光器结构形成在 p型ZnSe或p型ZnSSe缓冲层。此外，在基板和基于AlGaInP的缓冲层之间设置基于AlGaAs的缓冲层。此外，基于AlGaAs的缓冲层具有以Al0.5Ga0.4As表示的组成，AlGaInP基缓冲层具有以Al 0.5 In 0.5 P表示的组成。此外，以Al x Ga 1-x As表示的缓冲层中的Al的组成比x从0变为0.6，并且将表示为（AlyGa1-y）0.5In0.5P的缓冲层中的Al的组成比y从0调制为根据本发明，可以降低II / VI化合物半导体激光器的工作电压，并且可以获得低操作电压的绿色或蓝色半导体激光器。该半导体激光器可以在室温下连续工作，并且寿命长。

95. 发明授权

US5471067A Semiconductor metal contacting structure and a light emitting device 失效
标题翻译：半导体金属接触结构和发光器件
公开(公告)号：US5471067A
公开(公告)日：1995-11-28
申请号：US78037
申请日：1993-06-18
申请人： Masao Ikeda , Satoshi Ito , Yoshino Iochi , Takao Miyajima , Masafumi Ozawa , Katsuhiro Akimoto , Akira Ishibash , Futoshi Hiei
发明人： Masao Ikeda , Satoshi Ito , Yoshino Iochi , Takao Miyajima , Masafumi Ozawa , Katsuhiro Akimoto , Akira Ishibash , Futoshi Hiei
IPC分类号： H01L29/15 , H01L21/44 , H01L33/06 , H01L33/28 , H01L33/40 , H01S5/042 , H01S5/30 , H01S5/327 , H01S5/347 , H01L27/14 , H01L31/00
CPC分类号： H01L33/40 , B82Y20/00 , H01L33/06 , H01S5/0421 , H01L33/28 , H01S5/3068 , H01S5/327 , H01S5/347
摘要： A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.
摘要翻译：公开了能够发出蓝光或绿光的半导体激光器。半导体激光器包括以n型ZnMgSSe覆层，有源层，p型ZnMgSSe覆层，p型ZnSe接触层和p型ZnTe接触层，该n型ZnMgSSe覆层以n型 GaAs衬底。在p型ZnTe接触层上设置p侧电极。在n型GaAs衬底的背面设有n侧电极。在p型ZnSe接触层和p型ZnSe接触层之间的接合界面处，在p型ZnSe接触层中产生的耗尽层中提供包含由p型ZnTe构成的量子阱和由p型ZnSe制成的阻挡层的多量子阱层。 p型ZnTe接触层。从p侧电极注入的孔通过在多量子阱层的量子阱中形成的量子级的谐振隧穿效应而通过结。

96. 发明授权

US5095488A Semiconductor laser 失效
公开(公告)号：US5095488A
公开(公告)日：1992-03-10
申请号：US675272
申请日：1991-03-26
申请人： Tadashi Yamamoto , Masao Ikeda , Yasue Mikata
发明人： Tadashi Yamamoto , Masao Ikeda , Yasue Mikata
IPC分类号： H01S5/00 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01L33/0062 , H01S5/2231 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser formed into a double hetero junction structure comprising an n-type cladding layer and a p-type cladding layer with an active layer interposed therebetween. The p-type cladding layer has a laminated structure consisting of a first cladding layer of (Al.sub.x Ga.sub.1-x)InP disposed on one side adjacent to the active layer and a second cladding layer of Al.sub.y Ga.sub.1-y As disposed on the reverse side. A deterioration prevention layer of Al.sub.z Ga.sub.1-y As is included in the first cladding layer at a position spaced apart from the second cladding layer by a predetermined thickness. In addition, the second cladding layer is partially removed, and a current stricture layer is formed at the removed portion. Due to the above design, the semiconductor layer is capable of retaining high reliability with certainty.

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