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91. 发明授权

US06303263B1 Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups 失效
标题翻译：使用含有两个酸敏感性保护基团的聚合物的辐射敏感正性抗蚀剂
公开(公告)号：US06303263B1
公开(公告)日：2001-10-16
申请号：US09030568
申请日：1998-02-25
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
IPC分类号： G03F7039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/11 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.
摘要翻译：本发明涉及一种高性能的照射敏感抗蚀剂以及可用于制造它的聚合物树脂组合物。根据本发明，聚合物树脂包含双嵌段聚合物树脂。具体地，双嵌段聚合物树脂包含至少两种不同的酸不稳定保护基团，其阻挡聚合物树脂的一些但不是全部的极性官能团。包含所述双嵌段聚合物树脂的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

92. 发明授权

US06187505B1 Radiation sensitive silicon-containing resists 失效
标题翻译：辐射敏感含硅抗蚀剂
公开(公告)号：US06187505B1
公开(公告)日：2001-02-13
申请号：US09241441
申请日：1999-02-02
申请人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
发明人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.
摘要翻译：提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物。一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线，光束和离子束照射。

93. 发明授权

US6103447A Approach to formulating irradiation sensitive positive resists 失效
标题翻译：制定辐射敏感阳性抗蚀剂的方法
公开(公告)号：US6103447A
公开(公告)日：2000-08-15
申请号：US30566
申请日：1998-02-25
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/107 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
摘要翻译：本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基保护，并且所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

94. 发明授权

US08900988B2 Method for forming self-aligned airgap interconnect structures 有权
标题翻译：用于形成自对准气隙互连结构的方法
公开(公告)号：US08900988B2
公开(公告)日：2014-12-02
申请号：US13088083
申请日：2011-04-15
申请人： Qinghuang Lin , Benjamin L. Fletcher , Cyril Cabral, Jr.
发明人： Qinghuang Lin , Benjamin L. Fletcher , Cyril Cabral, Jr.
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/768 , H01L21/311
CPC分类号： H01L23/5222 , H01L21/31127 , H01L21/7682 , H01L21/76885 , H01L23/4821 , H01L23/528 , H01L23/53295 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.
摘要翻译：用于形成自对准气隙互连结构的装置和方法包括将导电层蚀刻到衬底以形成具有图案化间隙的导电结构并用牺牲材料填充间隙。将牺牲材料平坦化以暴露导电层的顶表面。在导电结构和牺牲材料上沉积可渗透盖层。通过可渗透层去除牺牲材料形成自对准的气隙。

95. 发明授权

US08822137B2 Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication 有权
标题翻译：自对准精细间距永久性片上互连结构和制造方法
公开(公告)号：US08822137B2
公开(公告)日：2014-09-02
申请号：US13197325
申请日：2011-08-03
申请人： Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
发明人： Qinghuang Lin , Sanjay Mehta , Hosadurga Shobha
IPC分类号： H01L23/48
CPC分类号： H01L23/5222 , H01L21/768 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76816 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L23/53295 , H01L2221/1026 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.
摘要翻译：互连结构及其制造方法包括层间电介质层的侧壁部分。侧壁部分具有小于给定平版印刷技术的最小特征尺寸的宽度，并且当在心轴的垂直表面上共形形成时，宽度由层间电介质层的厚度形成。侧壁部分形成间隔开的开口。导电结构填充间隔开的开口并且被侧壁部分分开以形成单个镶嵌结构。

96. 发明授权

US08795556B2 Self-aligned permanent on-chip interconnect structure formed by pitch splitting 有权
标题翻译：通过间距分割形成的自对准永久性片上互连结构
公开(公告)号：US08795556B2
公开(公告)日：2014-08-05
申请号：US13454723
申请日：2012-04-24
申请人： Qinghuang Lin
发明人： Qinghuang Lin
IPC分类号： C09K5/00 , G03F7/095 , G03F7/075 , H01L21/3105 , H01L21/768 , H01L21/027 , G03F7/004 , H01L21/31 , G03F7/039 , H01L21/02 , H01L23/532 , G03F7/038
CPC分类号： H01L23/53295 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0757 , G03F7/095 , H01L21/02126 , H01L21/02274 , H01L21/02282 , H01L21/02318 , H01L21/02345 , H01L21/0276 , H01L21/31 , H01L21/3105 , H01L21/76802 , H01L21/76807 , H01L21/76816 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L23/5329 , H01L2221/1031 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.
摘要翻译：提供了具有双重色调的混合光可图案化电介质材料，具有抛物线，如对辐射的溶解响应。在一个实施方案中，混合光可图案化电介质材料包括至少一种正色调组分的组合物，其包括正色调聚合物，正色调共聚物或具有一个单体的正性聚合物和/或正性色调共聚物的共混物或更多的酸敏感正音官能团; 至少一种负色调组分，包括负色调聚合物，负性色谱共聚物或具有一个或多个酸敏感负性官能团的负色调聚合物和/或负色调共聚物的共混物; 至少一个光致酸发生器; 和至少一种与正性和负性成分相容的溶剂。

97. 发明授权

US08618663B2 Patternable dielectric film structure with improved lithography and method of fabricating same 有权
标题翻译：具有改进光刻技术的可雕刻电介质膜结构及其制造方法
公开(公告)号：US08618663B2
公开(公告)日：2013-12-31
申请号：US11858636
申请日：2007-09-20
申请人： Qinghuang Lin , Deborah A. Neumayer
发明人： Qinghuang Lin , Deborah A. Neumayer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76808 , H01L21/02118 , H01L21/02167 , H01L21/02274 , H01L21/02282 , H01L21/0276 , H01L21/31 , H01L21/3121 , H01L21/3122 , H01L21/3148 , H01L21/76832 , H01L21/76835 , H01L21/76843 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; forming at least one interconnect pattern within the at least one patternable low-k material; and curing the at least one patternable low-k material. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.
摘要翻译：本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。一般来说，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料，所述无机抗反射涂层被气相沉积并包含M，C和H原子其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种; 在所述至少一个可编码的低k材料内形成至少一个互连图案; 以及固化所述至少一种可图案化的低k材料。本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

98. 发明申请

US20130302978A1 METHOD OF FORMING A GRAPHENE CAP FOR COPPER INTERCONNECT STRUCTURES 有权
标题翻译：形成铜箔互连结构的石墨片的方法
公开(公告)号：US20130302978A1
公开(公告)日：2013-11-14
申请号：US13605763
申请日：2012-09-06
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译：提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。铜结构位于电介质材料内。

99. 发明申请

US20130299988A1 GRAPHENE CAP FOR COPPER INTERCONNECT STRUCTURES 有权
标题翻译：铜箔互连结构的石墨盖
公开(公告)号：US20130299988A1
公开(公告)日：2013-11-14
申请号：US13468693
申请日：2012-05-10
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译：提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。铜结构位于电介质材料内。

100. 发明授权

US08445377B2 Mechanically robust metal/low-k interconnects 有权
标题翻译：机械稳健的金属/低k互连
公开(公告)号：US08445377B2
公开(公告)日：2013-05-21
申请号：US13229250
申请日：2011-09-09
申请人： Qinghuang Lin , Terry A. Spooner , Darshan D. Gandhi , Christy S. Tyberg
发明人： Qinghuang Lin , Terry A. Spooner , Darshan D. Gandhi , Christy S. Tyberg
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/3105 , H01L21/76805 , H01L21/76825 , H01L21/76826 , H01L21/76834
摘要： A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.
摘要翻译：提供了具有改善的低k电介质层和含电介质衬底之间的粘附强度的机械稳固的半导体结构。特别地，本发明提供了一种结构，其包括含电介质的衬底，其具有包括化学和物理上不同于衬底的经处理的表面层的上部区域; 以及位于所述基板的经处理的表面层上的低k电介质材料。经处理的表面层和低k电介质材料形成界面，该界面的粘合强度大于界面两侧的较弱材料的内聚强度的60％。经处理的表面通过在形成低k电介质材料之前用光化辐射，等离子体和电子束辐射中的至少一种来处理衬底的表面而形成。

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