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91. 发明申请

US20090135529A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090135529A1
公开(公告)日：2009-05-28
申请号：US11946358
申请日：2007-11-28
申请人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
发明人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/30
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction. The magneto-resistive effect unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them. The first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magneto-resistive effect changes so that much higher reliability is achievable.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及第一屏蔽层和第二屏蔽层，其位于和形成为使得磁阻效应单元夹在它们之间，具有沿层叠方向施加的感测电流。磁阻效应单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层介于它们之间。第一屏蔽层和第二屏蔽层由磁化方向控制装置在磁化方向上控制，并且第一铁磁层和第二铁磁层接收到产生反平行磁化状态的动作，其中相互磁化在第一屏蔽层和第二屏蔽层的磁作用的影响下处于相反方向。因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求记录密度此外，可以获得稳定的磁阻效应变化，从而可实现更高的可靠性。

92. 发明授权

US07533456B2 Fabrication process for magneto-resistive effect devices of the CPP structure 失效
标题翻译： CPP结构的磁阻效应器件的制造工艺
公开(公告)号：US07533456B2
公开(公告)日：2009-05-19
申请号：US11757174
申请日：2007-06-01
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01F41/183 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/1936 , H01F10/3268 , H01L43/12 , Y10T29/49021 , Y10T29/49034 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.
摘要翻译：自由层的功能使得磁化方向根据外部磁场而变化，并且由包括第一Heusler合金层的多层结构构成，并且固定磁化层采用其中内部销层和外部销层彼此叠置，夹在它们之间的非磁性中间层。内销层由包括第二Heusler合金层的多层结构构成。第一和第二Heusler合金层各自通过共溅射技术形成，其使用分裂的目标分成至少两个子靶，以构成Heusler合金层组成。因此，当形成Heusler合金层时，可以提高膜沉积速率，提高生产率并提高器件的性能。

93. 发明申请

US20070274010A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 有权
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070274010A1
公开(公告)日：2007-11-29
申请号：US11725476
申请日：2007-03-20
申请人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

94. 发明申请

US20070242396A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 失效
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070242396A1
公开(公告)日：2007-10-18
申请号：US11715341
申请日：2007-03-08
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
摘要翻译：在MR元件中，被钉扎层和自由层中的每一个包括Heusler合金层。 Heusler合金层具有两个形状为四边形并面向相反方向的表面。 Heusler合金层包括接触两个表面之一的四个侧面的一个晶粒。在制造MR元件的方法中，形成并构图成为MR元件的层状膜，然后对图案化的层叠膜进行热处理，使得包含在作为Heusler合金层的膜中的晶粒在从而形成层状膜生长，并且形成一个接触作为Heusler合金层的膜的一个表面的四面的晶粒。

95. 发明申请

US20070223147A1 METHOD OF MANUFACTURING THIN-FILM MAGNETIC HEAD 有权
标题翻译：制造薄膜磁头的方法
公开(公告)号：US20070223147A1
公开(公告)日：2007-09-27
申请号：US11752888
申请日：2007-05-23
申请人： Koji Shimazawa , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Yoshihiro Tsuchiya
IPC分类号： G11B5/33
CPC分类号： G11B5/3912 , G11B5/3932 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T428/1107
摘要： A method of manufacturing a thin-film magnetic head including forming the first shield layer; forming the magnetoresistive device, carried out after forming the first shield layer, a heat treatment providing exchange coupling between the ferromagnetic layer and the antiferromagnetic layer so as to magnetize the ferromagnetic layer in a predetermined direction; forming the domain control layer so as to hold the magnetoresistive device in a track width direction; magnetizing the domain control layer in a direction yielding a magnetic field in the same direction as with a magnetic field received by the ferromagnetic layer upon exchange-coupling with the antiferromagnetic layer, forming the second shield layer, carried out after magnetizing the domain control layer, and remagnetizing the domain control layer in a direction yielding the longitudinal bias magnetic field, carried out after forming the second shield layer.
摘要翻译：一种制造薄膜磁头的方法，包括形成第一屏蔽层; 形成所述磁阻器件，在形成所述第一屏蔽层之后进行的热处理，提供所述铁磁层与所述反铁磁层之间的交换耦合，以便沿预定方向磁化所述铁磁层; 形成所述域控制层，以将所述磁阻器件保持在轨道宽度方向; 在与反铁磁层交换耦合时由铁磁层接收的磁场沿与所述磁场相同的方向产生磁场的方向磁化畴控制层，形成在磁化控制层之后进行的第二屏蔽层，并且在形成第二屏蔽层之后进行的产生纵向偏置磁场的方向使磁畴控制层再磁化。

96. 发明申请

US20070183098A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US20070183098A1
公开(公告)日：2007-08-09
申请号：US11671248
申请日：2007-02-05
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/1936 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T428/1121
摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.
摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。氧化物的RA范围为0.10欧姆2至0.36欧姆2。

97. 发明申请

US20050237674A1 Thin film magnetic head, head gimbal assembly, and hard disk drive 失效
标题翻译：薄膜磁头，头万向节装配和硬盘驱动器
公开(公告)号：US20050237674A1
公开(公告)日：2005-10-27
申请号：US11105554
申请日：2005-04-14
申请人： Koji Shimazawa , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Yoshihiro Tsuchiya
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01L43/08
CPC分类号： B82Y10/00 , G11B5/3903 , H01L43/08
摘要： A thin film magnetic head includes a dual spin-valve magneto-resistive element. The dual spin-valve magneto-resistive element has a dual spin-valve magneto-resistive effect multilayer film composed of a first antiferromagnetic layer, a first fixed magnetic layer being a synthetic ferrimagnetic fixed layer, a first nonmagnetic layer, a soft magnetic layer, a second nonmagnetic layer, and a second fixed magnetic layer being a synthetic ferrimagnetic fixed layer. A stacked film thickness relationship of the first fixed magnetic layer, a stacked film thickness relationship of the second fixed magnetic layer, and a magnetostrictive constant are determined, and it is configured such that a static magnetic field produced from the first fixed magnetic layer and a current magnetic field generated by a sense current act to assist magnetization of the second fixed magnetic layer. Therefore, it is possible to obtain a thin film magnetic head of which the reproduction output is large while gap narrowing and track narrowing are achieved and of which the reliability is high with enhanced stability in pinning fixation.
摘要翻译：薄膜磁头包括双自旋阀磁阻元件。双自旋阀磁阻元件具有由第一反铁磁性层，第一固定磁性层，合成亚铁磁性固定层，第一非磁性层，软磁性层，第二非磁性层和作为合成铁磁性固定层的第二固定磁性层。确定第一固定磁性层的层叠膜厚度关系，第二固定磁性层的层叠膜厚度关系和磁致伸缩常数，并且构造成使得从第一固定磁性层和由感测电流产生的电流磁场用于辅助第二固定磁性层的磁化。因此，可以获得再现输出大的薄膜磁头，同时实现间隙变窄和轨道变窄，并且其可靠性高，在钉扎固定方面具有增强的稳定性。

98. 发明授权

US06562199B2 Manufacturing method of magnetoresistive element and film forming apparatus 失效
公开(公告)号：US06562199B2
公开(公告)日：2003-05-13
申请号：US09985481
申请日：2001-11-05
申请人： Koji Shimazawa , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Yoshihiro Tsuchiya
IPC分类号： C23C1434
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C23C14/541 , C23C14/568 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F41/302 , H01L43/12 , Y10T29/49032 , Y10T29/49034
摘要： There is disclosed a manufacturing method of a magnetoresistive element of the present invention, comprising: a step of preparing a substrate having a thermal conductivity in a range of 5 to 150 Wm−1K−1; a substrate cooling step of moving the substrate into a vacuum cooling chamber, and cooling the substrate at an absolute temperature of 200 K or less in the vacuum cooling chamber; and a laminated film forming step of moving the cooled substrate into a vacuum film forming chamber, fixing the substrate to a substrate holder, and forming a magnetoresistive laminated film on the substrate while rotating the substrate, so that the manufacturing method of the magnetoresistive element is little in dispersion of element property, high in reliability, and superior in productivity.

99. 发明授权

US08547805B1 Thermally-assisted magnetic recording head having temperature sensor embedded on dielectric waveguide 有权
标题翻译：具有嵌入在介质波导上的温度传感器的热辅助磁记录头
公开(公告)号：US08547805B1
公开(公告)日：2013-10-01
申请号：US13432245
申请日：2012-03-28
申请人： Eiji Komura , Koji Shimazawa , Tsutomu Chou , Shinji Hara , Kosuke Tanaka , Ryo Hosoi
发明人： Eiji Komura , Koji Shimazawa , Tsutomu Chou , Shinji Hara , Kosuke Tanaka , Ryo Hosoi
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/607 , G11B2005/0021
摘要： A thermal assisted magnetic recording head includes a dielectric waveguide that is configured to propagate propagation light a metal waveguide that is provided facing the dielectric waveguide and that couples to the propagation light propagating through the dielectric waveguide in a surface plasmon mode, thereby generating and propagating surface plasmon, a near-field light generator that is exposed on an air bearing surface facing a magnetic recording medium either at an end part of the metal waveguide or at a position facing the end part of the metal waveguide, and that generates near-field light from the surface plasmon, a magnetic pole for magnetic recording that is exposed on the air bearing surface, and a temperature sensor that is arranged inside the dielectric waveguide.
摘要翻译：热辅助磁记录头包括电介质波导，其被配置为传播传播光，所述介质波导设置成面对介质波导并且以表面等离子体模式耦合到传播通过介质波导的传播光，从而产生和传播表面等离子体激元，近场光发生器，其在面向金属波导的端部的面向磁记录介质的空气轴承表面上或面对金属波导的端部的位置处暴露，并且产生近场光从表面等离子体激元，暴露在空气轴承表面上的用于磁记录的磁极，以及布置在电介质波导内部的温度传感器。

100. 发明授权

US08295010B2 Thermally assisted magnetic head, head gimbal assembly, and hard disk drive 有权
标题翻译：热辅助磁头，磁头万向节组件和硬盘驱动器
公开(公告)号：US08295010B2
公开(公告)日：2012-10-23
申请号：US12053757
申请日：2008-03-24
申请人： Koji Shimazawa , Kosuke Tanaka , Hiraku Hirabayashi
发明人： Koji Shimazawa , Kosuke Tanaka , Hiraku Hirabayashi
IPC分类号： G11B5/127 , G11B5/40 , G11B11/00 , G11B5/02
CPC分类号： G11B5/314 , G11B5/02 , G11B2005/0005 , G11B2005/0021
摘要： The thermally assisted magnetic head comprises a medium-opposing surface; a magnetic recording device whose distance from a main magnetic pole to a medium is set longer than a distance from the medium-opposing surface to the medium; a first core for receiving light; and a second core positioned between a first light exit surface of the first core and the medium-opposing surface, having a second light exit surface on the medium side; while a distance between positions where an optical intensity distribution center within the first light exit surface and a center of the main magnetic pole are orthographically projected onto a reference plane including the second light exit surface is greater than a distance between an optical intensity distribution center within the second light exit surface and the position where the center of the leading end of the main magnetic pole is orthographically projected onto the reference plane.
摘要翻译：热辅助磁头包括介质相对表面; 从主磁极到介质的距离设定为比从介质相对表面到介质的距离长的磁记录装置; 第一个接收光的核心; 以及位于所述第一芯的第一光出射面与所述介质相对面之间的第二芯，在所述介质侧具有第二光出射面; 而第一光出射面内的光强度分布中心与主磁极的中心的正交投影到包括第二光出射面的基准面的位置之间的距离大于第二光出射面的光强度分布中心之间的距离，第二光出射表面和主磁极的前端的中心正交投影到参考平面上的位置。

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