会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 91. 发明授权
    • CMOS semiconductor device having dual-gate electrode construction and
method of production of the same
    • 具有双栅电极结构的CMOS半导体器件及其制造方法
    • US5877535A
    • 1999-03-02
    • US086921
    • 1998-05-29
    • Koichi Matsumoto
    • Koichi Matsumoto
    • H01L29/78H01L21/28H01L21/336H01L21/8238H01L27/092H01L29/72
    • H01L29/665H01L21/28052H01L21/28061H01L21/823842
    • A semiconductor device in which mutual diffusion of doped impurities occurring through an upper silicide electrode layer is prevented. A silicide electrode layer is doped with both the same degree of p-type impurities as the concentration of p-type impurities of the lower gate electrode layer and the same degree of n-type impurities as the concentration of n-type impurities. As a result, the concentration of doped impurities of the gate electrode layer is balanced at the two sides of the interface of the pMOS side and nMOS side. Therefore, heat diffusion caused by subsequent heat treatment is prevented and the problem of mutual diffusion can be solved. The present invention is also suitable for the SALICIDE process. Even when the silicide electrode layer is formed simultaneously on an extremely shallow source or drain region, since the concentration of the impurities of the silicide electrode layer was initially high, the lower impurities will not be drained so the contact resistance will not be made to deteriorate. As a result, it becomes easy for the SALICIDE process to be applied to submicron devices. In the method of production of the present invention, the silicide electrode layer is formed by the CVD method or the sputtering method and the impurities doped during this process, so no special step has to be provided for introducing the impurities.
    • 其中防止了通过上硅化物电极层发生的掺杂杂质的相互扩散的半导体器件。 掺杂了与下部栅电极层的p型杂质浓度相同程度的p型杂质和与n型杂质浓度相同程度的n型杂质的硅化物电极层。 结果,在pMOS侧和nMOS侧的界面的两侧平衡了栅电极层的掺杂杂质的浓度。 因此,防止了后续热处理引起的热扩散,可以解决相互扩散的问题。 本发明也适用于SALICIDE方法。 即使在非常浅的源极或漏极区域同时形成硅化物电极层,由于硅化物电极层的杂质的浓度最初为高,因此不会排出较低的杂质,因此不会使接触电阻劣化 。 因此,将SALICIDE工艺应用于亚微米器件变得容易。 在本发明的制造方法中,通过CVD法或溅射法形成硅化物电极层以及在该工序中掺杂的杂质,因此不得不提供引入杂质的特殊工序。
    • 94. 发明授权
    • Crawler belt for crawler motor vehicle
    • 履带式履带履带车
    • US5632537A
    • 1997-05-27
    • US216167
    • 1994-03-22
    • Hajime YoshimuraKouichi UchibabaTakahiro YamamotoKoichi MatsumotoYoshio UenoKenichi Sakai
    • Hajime YoshimuraKouichi UchibabaTakahiro YamamotoKoichi MatsumotoYoshio UenoKenichi Sakai
    • B62D55/24B62D55/26
    • B62D55/244B62D55/26
    • A crawler belt for use on a crawler motor vehicle has an elongate belt body drivable in a predetermined direction, and a plurality of ridges mounted on a ground contact side of the belt body, each of the ridges having at least one sipe defined in a free end thereof for allowing the ridge to be flexibly deformable in a direction opposite to the predetermined direction. Each of the ridges has a plurality of sipes defined therein and extending longitudinally thereof or substantially perpendicularly to the predetermined direction. The ridges comprise a plurality of chevron-shaped ridges pointing toward the predetermined direction and succesively arranged at predetermined spaced intervals in the predetermined direction. The ridges are divided into a plurality of groups each including a plurality of ridges by grooves extending transversely of the belt body, and divided into a plurality of segments by at least one longitudinal groove extending longitudinally of the belt body.
    • 用于履带式机动车辆的履带具有沿预定方向可驱动的细长带状体,以及安装在带体的接地接触侧的多个脊,每个脊具有限定为自由度的至少一个刀槽花纹 其端部允许脊沿与预定方向相反的方向可挠曲地变形。 每个脊具有限定在其中的多个刀槽花纹,并且纵向延伸或基本垂直于预定方向延伸。 脊部包括指向预定方向的多个人字形脊,并且沿预定方向以预定间隔的间隔连续布置。 脊被分成多个组,每个组包括多个脊,通过沿着带主体横向延伸的槽,并且通过至少一个沿着带主体纵向延伸的纵向槽分成多个段。