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91. 发明授权

US08563147B2 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization 有权
标题翻译：具有垂直各向异性的薄晶种Co / Ni多层膜，用于读取头传感器稳定
公开(公告)号：US08563147B2
公开(公告)日：2013-10-22
申请号：US12456935
申请日：2009-06-24
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Min Zheng
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Min Zheng
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/332 , B82Y10/00 , B82Y25/00 , G11B5/315 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49067 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193 , Y10T428/12819
摘要： A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
摘要翻译：公开了用于产生纵向偏压以稳定相邻自旋阀中的自由层的硬偏压（HB）结构，其包括至少由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层以提高上覆（Co / Ni）X层叠层的垂直磁各向异性（PMA）。（Co / Ni）X HB层沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。在HB层上形成覆盖层以防止后续工艺步骤中的蚀刻剂。在初始化之后，HB层中的磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。

92. 发明申请

US20130215672A1 MAGNETORESISTIVE LOGIC CELL AND METHOD OF USE 有权
标题翻译：磁性逻辑单元及其使用方法
公开(公告)号：US20130215672A1
公开(公告)日：2013-08-22
申请号：US13402123
申请日：2012-02-22
申请人： Yuchen Zhou , Zihui Wang , Yiming Huai , Yadav Ranjan , Roger K. Malmhall
发明人： Yuchen Zhou , Zihui Wang , Yiming Huai , Yadav Ranjan , Roger K. Malmhall
IPC分类号： G11C11/16
CPC分类号： G11C11/00 , G11C11/161 , G11C11/1673 , H01L27/222 , H01L43/08
摘要： A magnetoresistive logic cell (MRLC) is described that includes two MTJs in series that share a common free layer (CFL). The relative magnetization orientations of the CFL and the switchable reference layer (SRL) in MTJ-1 dominate the overall resistance of the MRLC without regard to the fixed magnetization orientation of the nonswitchable reference layer in MTJ-2. The high resistance state of the MRLC occurs when the switchable reference and common free layers have opposite magnetization orientations. The low resistance state occurs when the orientations are the same. This behavior allows the MRLC to be used as a logical comparator. The CFL is switched by STT effect by application of selected relatively short voltage pulses that do not switch the SRL. The SRL is switched with reference to the CFL by a voltage effect generated by a selected longer voltage pulse that does not switch the CFL.
摘要翻译：描述了包含共享共同自由层（CFL）的两个串联MTJ的磁阻逻辑单元（MRLC）。 MTJ-1中CFL和可切换参考层（SRL）的相对磁化取向主导了MRLC的总体电阻，而不考虑MTJ-2中不可切换参考层的固定磁化方向。当可切换参考和公共自由层具有相反的磁化方向时，MRLC的高电阻状态发生。当取向相同时，发生低电阻状态。此行为允许将MRLC用作逻辑比较器。通过施加不切换SRL的选定的相对较短的电压脉冲，通过STT效应来切换CFL。通过由不会切换CFL的选定的较长电压脉冲产生的电压效应，SRL将根据CFL进行切换。

93. 发明授权

US08513029B2 Discrete contact MR bio-sensor with magnetic label field alignment 有权
公开(公告)号：US08513029B2
公开(公告)日：2013-08-20
申请号：US11900370
申请日：2007-09-11
申请人： Yuchen Zhou
发明人： Yuchen Zhou
IPC分类号： G01N33/553 , G01N33/53
CPC分类号： G01N27/745 , B82Y25/00 , G01R33/093 , G01R33/1269
摘要： The invention describes a family of sensors for assaying macro-molecules and/or biological cells in solution. Each sensor has the form of a well (a hollow cylinder having a floor but no lid) or a trench whose walls comprise a plurality of GMR or TMR devices. Suitably shaped magnets located below each well's floor pull labeled particles into the well/trench and up against the inner wall where a field gradient orients them for optimum detection. Any unattached labels that happen to also be in the well/trench are removed through suitably sized holes in the floor.

94. 发明申请

US20130148417A1 METHOD FOR MAGNETIC SCREENING OF ARRAYS OF MAGNETIC MEMORIES 有权
标题翻译：磁性记忆棒的磁屏蔽方法
公开(公告)号：US20130148417A1
公开(公告)日：2013-06-13
申请号：US13314470
申请日：2011-12-08
申请人： Yuchen Zhou , Ebrahim Abedifard , Yiming Huai
发明人： Yuchen Zhou , Ebrahim Abedifard , Yiming Huai
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/165
摘要： A testing method is described that applies a sequence external magnetic fields of varying strength to MRAM cells (such as those with MTJ memory elements) in chips or wafers to selectively screen out cells with low or high thermal stability factor. The coercivity (Hc) is used as a proxy for thermal stability factor (delta). In the various embodiments the sequence, direction and strength of the external magnetic fields is used to determine the high coercivity cells that are not switched by a normal field and the low coercivity cells that are switched by a selected low field. In some embodiment the MRAM's standard internal electric current can be used to switch the cells. Standard circuit-based resistance read operations can be used to determine the response of each cell to these magnetic fields and identify the abnormal high and low coercivity cells.
摘要翻译：描述了一种测试方法，其将具有不同强度的序列外部磁场施加到芯片或晶片中的MRAM单元（例如具有MTJ存储元件的那些），以选择性地筛选具有低或高热稳定性因子的单元。矫顽力（Hc）用作热稳定因子（delta）的代表。在各种实施例中，外部磁场的顺序，方向和强度用于确定不被正常场切换的高矫顽力单元以及通过选定的低场切换的低矫顽力单元。在一些实施例中，MRAM的标准内部电流可用于切换电池。可以使用标准的基于电路的电阻读取操作来确定每个单元对这些磁场的响应并识别异常的高和低矫顽力单元。

95. 发明申请

US20130071954A1 MAGNETIC RANDOM ACCESS MEMORY (MRAM) WITH ENHANCED MAGNETIC STIFFNESS AND METHOD OF MAKING SAME 有权
标题翻译：具有增强磁力的MAGNETIC RANDOM ACCESS MEMORY（MRAM）及其制造方法
公开(公告)号：US20130071954A1
公开(公告)日：2013-03-21
申请号：US13341826
申请日：2011-12-30
申请人： Yuchen Zhou , Yiming Huai
发明人： Yuchen Zhou , Yiming Huai
IPC分类号： H01L21/02
CPC分类号： G11C11/161 , H01L43/12
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B). Annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer. Cooling down of the STTMRAM element to a second temperature that is lower than the first temperature is performed and a third free sub-layer is directly deposited on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.
摘要翻译：公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器（STTMRAM）元件及其制造方法。沉积第一自由子层，第一自由子层部分由硼（B）制成。在沉积第一自由子层之后，在第一温度下对STTMRAM元件进行退火，以降低第一自由子层与势垒层之间的界面处的B含量。执行STTMRAM元件的冷却到低于第一温度的第二温度，并且第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分地由硼制成（ B），其中第三子自由层中的B的量小于第二自由子层中的B的量。

96. 外观设计

USD664665S1 Skin care and beautification device 有权
标题翻译：护肤和美化装置
公开(公告)号：USD664665S1
公开(公告)日：2012-07-31
申请号：US29374669
申请日：2011-09-19
申请人： Chao Uei Wahng , Yuchen Zhou , Hieu Tieu
设计人： Chao Uei Wahng , Yuchen Zhou , Hieu Tieu

97. 发明申请

US20120148735A1 MAGNETIC RANDOM ACCESS MEMORY (MRAM) WITH ENHANCED MAGNETIC STIFFNESS AND METHOD OF MAKING SAME 有权
标题翻译：具有增强磁力的MAGNETIC RANDOM ACCESS MEMORY（MRAM）及其制造方法
公开(公告)号：US20120148735A1
公开(公告)日：2012-06-14
申请号：US12965733
申请日：2010-12-10
申请人： Yuchen Zhou
发明人： Yuchen Zhou
IPC分类号： G11C15/02
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.
摘要翻译：公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器（STTMRAM）元件及其制造方法。沉积第一自由子层，第一自由子层部分由硼（B）制成，在沉积第一自由子层之后，在第一温度下对STTMRAM元素进行退火，以降低B 在第一自由子层和阻挡层之间的界面，退火使第二自由子层形成在第一自由子层的顶部上并且部分地由B构成，第二自由子层的B的量层大于第一自由子层中的B的量。将STTMRAM元件冷却至低于第一温度的第二温度，并将第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼（B）制成，其中第三子自由层中的B的量小于第二自由子层中的B的量。

98. 发明申请

US20120089079A1 Ultrasonic device with integrated specimen dispenser 有权
标题翻译：带有集成样品分配器的超声波装置
公开(公告)号：US20120089079A1
公开(公告)日：2012-04-12
申请号：US12925017
申请日：2010-10-12
申请人： Hieu Tieu , Yuchen Zhou , Chao Uei Wahng
发明人： Hieu Tieu , Yuchen Zhou , Chao Uei Wahng
IPC分类号： A61N7/00 , A61M37/00
CPC分类号： A45D34/04 , A45D40/18 , A45D40/24 , A45D2200/055 , A45D2200/207 , A61M35/00
摘要： This application teaches a novel ultrasonic skin care device with a built-in specimen containment and a dispensing mechanism to enable easy application of the specimen for hygiene operation of the device for skin beautification purpose. The device provides portability for usage anywhere and anytime and provides a flexibility of multi-purpose skin care treatment with a unique design of multiple specimen containment structures.
摘要翻译：本申请教导了一种具有内置样品容纳物和分配机构的新型超声波护肤装置，以便容易地将样品用于皮肤美化装置的卫生操作。该设备提供随时随地使用的便携性，并提供多用途护肤治疗的灵活性，并采用独特的多个样品容纳结构设计。

99. 发明申请

US20110260270A1 MR enhancing layer (MREL) for spintronic devices 有权
标题翻译：用于自旋电子设备的MR增强层（MREL）
公开(公告)号：US20110260270A1
公开(公告)日：2011-10-27
申请号：US12799468
申请日：2010-04-26
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H01L43/00 , H01L29/82 , H01L43/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11B5/3929 , G11B5/3967 , H01F1/401 , H01F10/193 , H01F10/1936 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L29/66984 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129
摘要： The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as API, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.
摘要翻译：通过将一个或多个磁阻增强层（MREL）插入一个或多个有源层（例如API，SIL，FGL和自由层）的大致中心，已经改善了MR器件的性能。 MREL是低带隙的层，诸如ZnO的高电子迁移率半导体或诸如Bi的半金属。

100. 发明授权

US07978444B2 Detection of magnetic beads using a magnetoresistive device together with ferromagnetic resonance 有权
标题翻译：使用磁阻器件与铁磁共振检测磁珠
公开(公告)号：US07978444B2
公开(公告)日：2011-07-12
申请号：US12800324
申请日：2010-05-12
申请人： Yuchen Zhou
发明人： Yuchen Zhou
IPC分类号： G11B5/127
CPC分类号： G01N24/10 , G01N24/088 , G01R33/5601
摘要： A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance of the latter is then detected by a magneto-resistive type of sensor. This approach offers several advantages over prior art methods in which the magnetic moment of the bead is detected directly.
摘要翻译：公开了一种用于检测磁珠存在的方法和装置。通过提供静态磁场和在MHz范围内或以后交替的磁场，磁珠可以被激发成FMR（铁磁共振）。然后由磁阻式传感器检测后者的外观。这种方法提供了优于现有技术方法的几个优点，其中珠的磁矩直接被检测。

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