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91. 发明授权

US08339840B2 Storage element and memory 有权
标题翻译：存储元件和存储器
公开(公告)号：US08339840B2
公开(公告)日：2012-12-25
申请号：US12668925
申请日：2008-06-30
申请人： Masanori Hosomi , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
发明人： Masanori Hosomi , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , H01L27/228
摘要： A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.
摘要翻译：提供了能够在不增加写入电流的情况下提高热稳定性的存储器。存储器被配置为包括：存储元件，其具有根据磁性物质的磁化状态保存信息的存储层，并且其中在存储层上设置有中间层16的磁化固定层，中间层层由绝缘体形成，通过在层叠方向注入电子自旋极化来改变存储层的磁化方向，使得信息被记录在存储层中，并且从绝缘层向存储层施加失真其存在于存储层周围并且具有比存储层更小的热膨胀系数。一种用于提供在存储元件的层叠方向上流动的电流的布线。

92. 发明授权

US07869272B2 Memory device and memory for retaining information based on amagnetization state of a magnetic material 有权
标题翻译：基于磁性材料的磁化状态来保存信息的存储器件和存储器
公开(公告)号：US07869272B2
公开(公告)日：2011-01-11
申请号：US12506637
申请日：2009-07-21
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1659
摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.
摘要翻译：提供存储器件。存储器件包括存储层和固定磁化层。存储层基于磁性材料的磁化状态保留信息。通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

93. 发明申请

US20100135069A1 RESISTANCE VARIABLE MEMORY DEVICE 失效
标题翻译：电阻可变存储器件
公开(公告)号：US20100135069A1
公开(公告)日：2010-06-03
申请号：US12629671
申请日：2009-12-02
申请人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
发明人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
IPC分类号： G11C11/16
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.
摘要翻译：提供了电阻可变存储器件，并且包括通过利用基于注入电流的自旋转移效应来写入数据的电阻变化存储单元。存储器件还包括产生多个写入脉冲的组合脉冲的驱动电路和限定写入脉冲之间的电平的偏移脉冲，并且在写入时将组合的脉冲提供给存储器单元。

94. 发明申请

US20090285017A1 MEMORY DEVICE AND MEMORY 有权
标题翻译：存储器和存储器
公开(公告)号：US20090285017A1
公开(公告)日：2009-11-19
申请号：US12506637
申请日：2009-07-21
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1659
摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.
摘要翻译：提供存储器件。存储器件包括存储层和固定磁化层。存储层基于磁性材料的磁化状态保留信息。通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

95. 发明授权

US08411499B2 Recording method for magnetic memory device 有权
标题翻译：磁记录装置的记录方法
公开(公告)号：US08411499B2
公开(公告)日：2013-04-02
申请号：US12936441
申请日：2009-04-15
申请人： Hiroyuki Ohmori , Masanori Hosomi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
发明人： Hiroyuki Ohmori , Masanori Hosomi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , H01L43/08
摘要： [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10−25 or less that is obtained when a write pulse a little larger than the inversion threshold value is applied.[Solving Means] While taking time of 2 ns or more, write power injected at a time a write pulse falls is reduced gradually. At this time, it is favorable to keep a rate of decline of a voltage of the write pulse at the time of the fall small until the voltage of the write pulse at the time of the fall becomes smaller than an inversion threshold voltage of the magnetic memory device.
摘要翻译：本发明提供一种包括记录层的磁记录装置的记录方法，所述记录层能够改变磁化方向并保持作为磁体的磁化方向的信息和相对于记录层设置的磁化参考层绝缘层插入其间并成为磁化方向的参考，磁存储器件通过经由绝缘层在记录层和磁化参考层之间流动的电流记录信息，该记录方法能够保持甚至当施加显着高于反转阈值的写入脉冲时，施加写入脉冲比反转阈值稍大的时候获得的写入错误率为10-25或更小。 [解决方法]在2ns以上的时间内，写入脉冲下降时的写入功率逐渐减小。此时，有效的是在下降时保持写入脉冲的电压下降的程度小直到在下降时写入脉冲的电压变得小于磁性的反转阈值电压存储设备。

96. 发明授权

US08149613B2 Resistance variable memory device 失效
标题翻译：电阻变量存储器件
公开(公告)号：US08149613B2
公开(公告)日：2012-04-03
申请号：US12629671
申请日：2009-12-02
申请人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
发明人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.
摘要翻译：提供了电阻可变存储器件，并且包括通过利用基于注入电流的自旋转移效应来写入数据的电阻变化存储单元。存储器件还包括产生多个写入脉冲的组合脉冲的驱动电路和限定写入脉冲之间的电平的偏移脉冲，并且在写入时将组合的脉冲提供给存储器单元。

97. 发明申请

US20110026322A1 RECORDING METHOD FOR MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置记录方法
公开(公告)号：US20110026322A1
公开(公告)日：2011-02-03
申请号：US12936441
申请日：2009-04-15
申请人： Hiroyuki Ohmori , Masanori Hosomi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
发明人： Hiroyuki Ohmori , Masanori Hosomi , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , H01L43/08
摘要： [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10−25 or less that is obtained when a write pulse a little larger than the inversion threshold value is applied.[Solving Means] While taking time of 2 ns or more, write power injected at a time a write pulse falls is reduced gradually. At this time, it is favorable to keep a rate of decline of a voltage of the write pulse at the time of the fall small until the voltage of the write pulse at the time of the fall becomes smaller than an inversion threshold voltage of the magnetic memory device. [Selected Drawing] FIG. 1
摘要翻译：本发明提供一种包括记录层的磁记录装置的记录方法，所述记录层能够改变磁化方向并保持作为磁体的磁化方向的信息和相对于记录层设置的磁化参考层绝缘层插入其间并成为磁化方向的参考，磁存储器件通过经由绝缘层在记录层和磁化参考层之间流动的电流记录信息，该记录方法能够保持甚至当施加显着高于反转阈值的写入脉冲时，施加写入脉冲比反转阈值稍大的时候获得的写入错误率为10-25或更小。 [解决方法]在2ns以上的时间内，写入脉冲下降时的写入功率逐渐减小。此时，有效的是在下降时保持写入脉冲的电压下降的程度小直到在下降时写入脉冲的电压变得小于磁性的反转阈值电压存储设备。 [所选图] 1

98. 发明授权

US07633796B2 Storage element and memory 有权
标题翻译：存储元件和存储器
公开(公告)号：US07633796B2
公开(公告)日：2009-12-15
申请号：US12013895
申请日：2008-01-14
申请人： Kazutaka Yamane , Minoru Ikarashi , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
发明人： Kazutaka Yamane , Minoru Ikarashi , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , Y10S977/934 , Y10S977/935
摘要： A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.
摘要翻译：存储元件包括用于根据磁性材料的磁化状态保持信息的存储层; 以及磁化方向固定的磁化固定层，其相对于存储层通过非磁性层布置。存储层的磁化方向通过在层叠方向上施加电流而改变，以使信息能够被记录到存储层。在磁化固定层或相对于存储层的磁化固定层的相对侧上形成分别具有层压方向上的磁化成分并且彼此具有不同方向的磁化的多个磁化区域。

99. 发明授权

US07616475B2 Memory element and memory 有权
标题翻译：内存元素和内存
公开(公告)号：US07616475B2
公开(公告)日：2009-11-10
申请号：US11745937
申请日：2007-05-08
申请人： Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
发明人： Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/16
摘要： A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer. Also, a ferromagnetic layer forming the memory layer has a magnetostriction constant of 1×10−5 or more.
摘要翻译：提供了包括基于磁性材料的磁化状态保持信息的存储层的存储元件。在存储元件中，通过中间层为存储层提供磁化钉扎层，中间层由绝缘体形成，自旋极化电子沿堆叠方向注入以改变存储层的磁化方向，因此该信息被记录在存储器层中。此外，形成存储层的铁磁层的磁致伸缩常数为1×10 -5以上。

100. 发明授权

US07525166B2 Memory element and memory 有权
标题翻译：内存元素和内存
公开(公告)号：US07525166B2
公开(公告)日：2009-04-28
申请号：US11736360
申请日：2007-04-17
申请人： Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
发明人： Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01F41/309 , H01L27/228 , H01L43/08
摘要： A memory element is provided. The memory element includes a memory layer that retains information based on a magnetization state of a magnetic material, in which a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer, and a fine oxide is dispersed in an entire or part of a ferromagnetic layer forming the memory layer.
摘要翻译：提供存储元件。存储元件包括存储层，其基于磁性材料的磁化状态保持信息，其中通过中间层为存储层提供磁化钉扎层，中间层由绝缘体形成，自旋极化电子在堆叠方向上注入以改变存储层的磁化方向，从而将信息记录在存储层中，并且细微氧化物分散在形成存储层的铁磁层的整个或部分中。

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