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91. 发明授权

US06937209B1 Image display system 失效
标题翻译：图像显示系统
公开(公告)号：US06937209B1
公开(公告)日：2005-08-30
申请号：US09657430
申请日：2000-09-07
申请人： Hideki Nagata , Takeshi Endo , Ichiro Kasai
发明人： Hideki Nagata , Takeshi Endo , Ichiro Kasai
IPC分类号： G03B21/00 , G02B27/14 , G09G5/00
CPC分类号： G02B27/1066 , G02B27/144 , G02B27/149
摘要： An image display apparatus has an observation room for housing an observer, and the side faces, floor face, and ceiling face of the observation room are used as screens, onto which images displayed on a smaller number of image display devices than the number of screens are projected. At least one image display device displays, on a time-division or screen-division basis, images to be projected onto two or more screens so that images are projected onto all of the screens.
摘要翻译：图像显示装置具有用于容纳观察者的观察室，并且观察室的侧面，地板面和天花板面被用作屏幕，显示在比屏幕数量少的图像显示装置上的图像被投射。至少一个图像显示设备以时间或屏幕划分的方式显示要投影到两个或更多个屏幕上的图像，使得图像被投影到所有屏幕上。

92. 发明授权

US06845325B2 Global classification of sonic logs 有权
公开(公告)号：US06845325B2
公开(公告)日：2005-01-18
申请号：US10005497
申请日：2001-11-08
申请人： Henri-Pierre Valero , Alain Brie , Takeshi Endo
发明人： Henri-Pierre Valero , Alain Brie , Takeshi Endo
IPC分类号： G01V1/48 , G01V1/00 , G01V1/28
CPC分类号： G01V1/48
摘要： A method of determining the sonic slowness of a formation traversed by a borehole comprising generating tracks from sonic waveform peaks received at a plurality of depths wherein the peaks that are not classified prior to tracking is set forth. A method for generating a slowness versus depth log is generated for waveform arrivals by classifying long tracks, classifying small tracks; classifying tracks that overlap; filling in gaps; and creating a final log is disclosed. In further improvements, non-classified tracks and interpolation are used to fill in gaps.

93. 发明授权

US06452228B1 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US06452228B1
公开(公告)日：2002-09-17
申请号：US09626741
申请日：2000-07-26
申请人： Eiichi Okuno , Takeshi Endo , Kunihiko Hara
发明人： Eiichi Okuno , Takeshi Endo , Kunihiko Hara
IPC分类号： H01L2348
CPC分类号： H01L29/0696 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/7802 , H01L29/7813 , H01L29/7838 , H01L2924/0002 , H01L2924/00
摘要： A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×1015 cm−3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film.
摘要翻译：由碳化硅制成的垂直型功率MOSFET包括掺杂有氮作为掺杂剂的表面沟道层，其浓度等于或小于1×10 15 cm -3。因此，当在表面沟道层上形成栅极氧化膜时，在栅极氧化膜中产生的氮化硅的量和栅氧化膜与表面沟道层之间的界面变得非常小。结果，阻止了由氮化硅产生载流子阱，从而导致稳定的FET特性和对栅氧化膜的高可靠性。

94. 发明授权

US6165822A Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US6165822A
公开(公告)日：2000-12-26
申请号：US224351
申请日：1999-01-04
申请人： Eiichi Okuno , Takeshi Endo , Shinji Amano
发明人： Eiichi Okuno , Takeshi Endo , Shinji Amano
IPC分类号： H01L29/16 , H01L21/04 , H01L29/04 , H01L29/06 , H01L29/12 , H01L29/24 , H01L29/423 , H01L29/78 , H01L21/335 , H01L21/338
CPC分类号： H01L29/0696 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/7802 , H01L29/7813 , H01L29/7838 , H01L2924/0002 , H01L2924/00
摘要： A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1.times.10.sup.15 cm.sup.-3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film.
摘要翻译：由碳化硅制成的垂直型功率MOSFET包括掺杂有氮作为掺杂剂的表面沟道层，其浓度等于或小于1×10 15 cm -3。因此，当在表面沟道层上形成栅极氧化膜时，在栅极氧化膜中产生的氮化硅的量和栅氧化膜与表面沟道层之间的界面变得非常小。结果，阻止了由氮化硅产生载流子阱，从而导致稳定的FET特性和对栅氧化膜的高可靠性。

95. 发明授权

US5399695A Method for the synthesis of quaternary ammonium salts 失效
标题翻译：季铵盐的合成方法
公开(公告)号：US5399695A
公开(公告)日：1995-03-21
申请号：US45531
申请日：1993-04-09
申请人： Shinji Nakano , Takao Morimoto , Takeshi Endo
发明人： Shinji Nakano , Takao Morimoto , Takeshi Endo
IPC分类号： C07C209/60 , C07C211/64 , C07C217/58 , C07D213/20 , C07C211/27 , C07F9/92
CPC分类号： C07D213/20 , C07C209/60 , C07C211/64 , C07C217/58
摘要： Provided is a convenient method for synthesizing quaternary ammonium salts which are useful as curing catalysts for one-part thermosetting resin compositions which maintain storage stability at room temperature. The ammonium salts are synthesized by direct reaction of a benzyl alcohol or a benzyl alkyl ether optionally having on the benzene ring and/or at .alpha.-position one or more substituent groups inert to the intended reaction, with a corresponding strong-acid salt of a tertiary amine.
摘要翻译：提供合成季铵盐的方便方法，其可用作在室温下保持储存稳定性的一部分热固性树脂组合物的固化催化剂。铵盐通过苯甲醇或任选在苯环上和/或α位上一个或多个对预期反应呈惰性的取代基的苯甲醇或苄基烷基醚与相应的强酸盐叔胺。

96. 发明授权

US5335140A Drawer-type circuit interrupter 失效
标题翻译：抽屉式电路断路器
公开(公告)号：US5335140A
公开(公告)日：1994-08-02
申请号：US20360
申请日：1993-02-22
申请人： Toshihide Kamino , Junichi Sonoda , Hirofumi Ogawa , Takeshi Endo
发明人： Toshihide Kamino , Junichi Sonoda , Hirofumi Ogawa , Takeshi Endo
IPC分类号： H01H73/02 , H01H73/04 , H02B11/04 , H02B11/12
CPC分类号： H01H73/045 , H02B11/04
摘要： A drawer-type circuit interrupter is constructed with a first contact member having an open-and-close contact member, an open-and-close operation mechanism for operating said first contact member, an interrupter main body having a second contact member and a mounting frame having the external line contact terminals, wherein the second contact member is a movable-type provided with an open-and-close contact portion that is contactable with and separable from the first contact member on the one end thereof and a drawer contact member that contacts with an external line contact terminal on the other end thereof, and a compression spring for urging the second contact member into a direction for contacting the external line contact terminal on the other end of the second contact member. When the interrupter body is in the connected position the drawer contact portion on the other end of said second contact member and said external line contact terminal are into contact. The second contacting member and the external line connecting terminal can be constituted to contact each other at a plurality of points, for example two, to improve contact and interruption performance.
摘要翻译：抽屉式电路断路器由具有开闭接触构件的第一接触构件，用于操作所述第一接触构件的开闭操作机构构成，具有第二接触构件和安装件的断续器主体框架，其具有外部线路接触端子，其中第二接触构件是可移动型，其具有与其一端上的第一接触构件可接触和可分离的开闭接触部分和抽屉接触构件，与另一端的外部线路接触端子接触，以及用于将第二接触构件推向与第二接触构件的另一端的外部线路接触端子接触的方向的压缩弹簧。当断续器主体处于连接位置时，所述第二接触构件的另一端和所述外部线路接触端子上的抽屉接触部分接触。第二接触构件和外部线路连接端子可以被构造成在多个点例如两个彼此接触，以改善接触和中断性能。

97. 发明授权

US5278328A Process for producing carboxylic acid chloride 失效
标题翻译：生产羧酸氯化物的方法
公开(公告)号：US5278328A
公开(公告)日：1994-01-11
申请号：US849188
申请日：1992-03-11
申请人： Takeshi Endo , Toshikazu Takata , Shinichi Ohno , Fujio Takahashi
发明人： Takeshi Endo , Toshikazu Takata , Shinichi Ohno , Fujio Takahashi
IPC分类号： C07C51/60 , C07C51/00
CPC分类号： C07C51/60
摘要： Disclosed is a process for producing a carboxylic acid chloride by reacting phosgene with a carboxylic acid or an anhydride thereof, which comprises effecting the reaction in the presence of a homopolymer or copolymer of a monomer represented by formula (I) or (II) below, a copolymer of the monomers represented by formulae (I) and (II) below, or a copolymer of at least one monomer selected from the group sensisting of the monomers represented by formulae (I) and (II) below with another monomer copolymerizable therewith:CH.sub.2 .dbd.CHNR.sup.1 COR.sup.2 (I)CH.sub.2 .dbd.CR.sup.3 CONR.sup.4 R.sup.5 (II).In these formulae R.sup.1, R.sup.2, and R.sup.4 each represents an alkyl group containing from 1 to 3 carbon atoms, or an alkylene group containing from 3 to 5 carbon atoms provided that R.sup.1 with R.sup.2, and R.sup.4 with R.sup.5 may each combine to form a ring structure through >N--CO-- or >N-- in the molecule; R.sup.3 and R.sup.5 each represents a hydrogen atom or an alkyl group containing from 1 to 3 carbon atoms; and the alkyl groups and alkylene groups may have substituents which are inactive under the polymerization and chlorination reaction conditions.
摘要翻译：本发明公开了一种通过使光气与羧酸或其酸酐反应来制造羧酸氯化物的方法，该方法包括在下述通式（I）或（II）表示的单体的均聚物或共聚物的存在下进行反应，由下式（I）和（II）表示的单体的共聚物，或选自下述通式（I）和（II）表示的单体的至少一种单体与可与其共聚的单体的共聚物： CH2 = CHNR1COR2（I）CH2 = CR3CONR4R5（II）。在这些式中，R 1，R 2和R 4各自表示含有1至3个碳原子的烷基或含有3至5个碳原子的亚烷基，条件是R 1与R 2和R 4与R 5可以各自组合形成环在分子中通过> N-CO-或> N-的结构; R 3和R 5各自表示氢原子或含有1至3个碳原子的烷基; 并且烷基和亚烷基可以具有在聚合和氯化反应条件下无活性的取代基。

98. 发明授权

US5142050A Aromatic isocyanurate compound 失效
标题翻译：芳香异氰酸酯化合物
公开(公告)号：US5142050A
公开(公告)日：1992-08-25
申请号：US662347
申请日：1991-02-26
申请人： Takeshi Endo , Yoko Nambu
发明人： Takeshi Endo , Yoko Nambu
IPC分类号： C07D251/34 , C07F7/18 , C08K5/3477 , C08K5/3492
CPC分类号： C07D251/34 , C07F7/1856 , C07F7/1896
摘要： A novel tri-substituted triphenyl isocyanurate is defined by the following formula and useful as a crosslinking agent for resins. ##STR1## wherein X represents --O-- or --COO--; and R represents a hydrogen atom, a straight-chain or branched alkyl group having 1 to 10 carbon atoms, which may be either unsubstituted or substituted with a hydroxyl group, an aryl group or an R'.sub.3 Si group (wherein a plurality of R' groups may be the same or different from each other and each represents a straight-chain or branched alkyl group having 1 to 10 carbon atoms or a phenyl group), except when X is --O-- and R is CH.sub.3.

99. 发明授权

US4870193A Process for producing spiro-orthocarbonate 失效
标题翻译：生产螺 - 原碳酸酯的方法
公开(公告)号：US4870193A
公开(公告)日：1989-09-26
申请号：US771915
申请日：1985-09-03
申请人： Hiromu Taguchi , Kiyokazu Mizutani , Hiroyuki Kato , Takeshi Endo
发明人： Hiromu Taguchi , Kiyokazu Mizutani , Hiroyuki Kato , Takeshi Endo
IPC分类号： C07D493/08 , C07D319/00 , C07D493/10 , C08G65/16
CPC分类号： C07D493/10
摘要： A process for producing spiro-orthocarbonate having glycol unit (2) is described, which comprises reacting a spiro-orthocarbonate having glycol unit (1) which is different from glycol unit (2), with a glycol having glycol unit (2) to release a glycol having glycol unit (1).
摘要翻译：描述了一种生产具有二醇单元（2）的螺 - 原碳酸酯的方法，其包括使具有与二醇单元（2）不同的二醇单元（1）的螺 - 原碳酸酯与具有二醇单元（2）的二元醇反应以使其释放具有二醇单元（1）的二醇。

100. 发明授权

US4841058A Viologen derivative 失效
标题翻译：紫精衍生物
公开(公告)号：US4841058A
公开(公告)日：1989-06-20
申请号：US168626
申请日：1988-03-07
申请人： Takeshi Endo , Yoko Nambu , Kazutoshi Yamamoto
发明人： Takeshi Endo , Yoko Nambu , Kazutoshi Yamamoto
IPC分类号： C07D213/04 , C07D213/22 , C08F26/00 , C08F26/06 , C08F226/06 , H01B1/12
CPC分类号： C07D213/22
摘要： The present invention relates to a novel viologen derivative having at least one polymerizable vinyl group directly bonded to a viologen skelton and a process for producing the same.The novel viologen derivative can be used for a display material, various sensors and the like.
摘要翻译：本发明涉及一种具有至少一个可直接键合到紫苏酮骨架上的可聚合乙烯基的新型紫罗兰衍生物及其制备方法。该新颖的紫罗兰衍生物可用于显示材料，各种传感器等。

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