会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 91. 发明申请
    • INTEGRATED CIRCUIT HAVING PAIRS OF PARALLEL COMPLEMENTARY FINFETS
    • 具有并联补偿器件对的集成电路
    • US20050001273A1
    • 2005-01-06
    • US10604206
    • 2003-07-01
    • Andres BryantWilliam ClarkDavid FriedMark JaffeEdward NowakJohn PekarikChristopher Putnam
    • Andres BryantWilliam ClarkDavid FriedMark JaffeEdward NowakJohn PekarikChristopher Putnam
    • H01L21/308H01L21/336H01L21/84H01L27/12H01L29/786H01L33/00
    • H01L21/84H01L21/3086H01L21/3088H01L21/823821H01L27/1203H01L29/66795H01L29/785Y10S438/947
    • A method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed. The invention has a first-type of FinFET which includes a first fin, and a second-type of FinFET which includes a second fin running parallel to the first fin. The invention also has an insulator fin positioned between the source/drain regions of the first first-type of FinFET and the second-type of FinFET. The insulator fin has approximately the same width dimensions as the first fin and the second fin, such that the spacing between the first-type of FinFET and the second-type of FinFET is approximately equal to the width of one fin. The invention also has a common gate formed over channel regions of the first-type of FinFET and the second-type of FinFET. The gate includes a first impurity doping region adjacent the first-type of FinFET and a second impurity doping region adjacent the second-type of FinFET. The differences between the first impurity doping region and the second impurity doping region provide the gate with different work functions related to differences between the first-type of FinFET and the second-type of FinFET. The first fin and the second fin have approximately the same width.
    • 公开了利用互补翅片型场效应晶体管(FinFET)的集成电路结构的方法和结构。 本发明具有包括第一鳍片的第一类型的FinFET和包括与第一鳍片平行的第二鳍片的第二类型的FinFET。 本发明还具有位于第一第一类型FinFET的源极/漏极区域和第二类型FinFET之间的绝缘体鳍片。 绝缘体鳍片具有与第一鳍片和第二鳍片大致相同的宽度尺寸,使得第一类型的FinFET和第二类型的FinFET之间的间隔大致等于一个鳍片的宽度。 本发明还具有形成在第一类型FinFET和第二类型FinFET的沟道区上的公共栅极。 栅极包括与第一类型的FinFET相邻的第一杂质掺杂区域和与第二类型的FinFET相邻的第二杂质掺杂区域。 第一杂质掺杂区域和第二杂质掺杂区域之间的差异为栅极提供与第一类型FinFET和第二类型FinFET之间的差异有关的不同功函数。 第一鳍片和第二鳍片具有大致相同的宽度。
    • 93. 发明授权
    • Current measuring methods
    • 电流测量方法
    • US06445244B1
    • 2002-09-03
    • US09677973
    • 2000-10-02
    • Anthony StratakosAndrew J. BursteinDavid B. LidskyPhong NguyenWilliam Clark
    • Anthony StratakosAndrew J. BursteinDavid B. LidskyPhong NguyenWilliam Clark
    • G05F302
    • G01R19/0092G05F3/242
    • A sensor for measuring a current passing through a load. The sensor has a power transistor having a first terminal connected to substantially constant voltage and a second terminal connected to the load. The sensor can sample a voltage difference with a variable capacitor, and a controller can be configured to cause a variable capacitor in the current sensor to have a capacitance inversely proportional to a resistance of the power transistor, whereby a charge stored on the variable capacitor is proportional to the current passing through the power transistor when the sampling switches are opened. A comparator can compare the current through the power transistor to a known reference current to generate a digital output signal. The sensor can include a power transistor, reference transistor and amplifier connected and configured so as to generate a signal on a reference line having a current of known proportion to the current passing through the load.
    • 用于测量通过负载的电流的传感器。 传感器具有功率晶体管,其具有连接到基本恒定电压的第一端子和连接到负载的第二端子。 传感器可以用可变电容器对电压差进行采样,并且控制器可以被配置为使得电流传感器中的可变电容器具有与功率晶体管的电阻成反比的电容,由此存储在可变电容器上的电荷是 与采样开关打开时通过功率晶体管的电流成比例。 比较器可将通过功率晶体管的电流与已知参考电流进行比较,以产生数字输出信号。 传感器可以包括功率晶体管,参考晶体管和放大器,其连接和配置为在具有与通过负载的电流具有已知比例的电流的参考线上产生信号。