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91. 发明申请

US20100155729A1 FAN-OUT UNIT AND THIN-FILM TRANSISTOR ARRAY SUBSTRATE HAVING THE SAME 有权
标题翻译：扇出单元和薄膜晶体管阵列基板
公开(公告)号：US20100155729A1
公开(公告)日：2010-06-24
申请号：US12637658
申请日：2009-12-14
申请人： Sung-Hoon Yang , So-Woon Kim , Yeon-Ju Kim , So-Hyun Lee , Kwang-Hoon Lee , Mun-Soo Park , Jung-Hyeon Kim
发明人： Sung-Hoon Yang , So-Woon Kim , Yeon-Ju Kim , So-Hyun Lee , Kwang-Hoon Lee , Mun-Soo Park , Jung-Hyeon Kim
IPC分类号： H01L27/13 , H01L29/786
CPC分类号： G02F1/1345 , H01L27/124 , H05K1/0265 , H05K1/167 , H05K2201/0784 , H05K2201/09263
摘要： A fan-out unit which can control a resistance difference among channels with efficient space utilization and a thin-film transistor (TFT) array substrate having the fan-out unit are presented. The fan-out unit includes: an insulating substrate; a first wiring layer which is formed on the insulating substrate and connected to a pad; a second wiring layer which is formed on the insulating substrate and connected to a TFT; and a resistance controller which is connected between the first wiring layer and the second wiring layer and includes a plurality of first resistors extending parallel to the first wiring layer and a plurality of second resistors extending perpendicular to the first resistors and alternately connecting to the first resistors, wherein the first resistors are longer than the second resistors.
摘要翻译：提出了一种能够控制具有高效空间利用的通道之间的电阻差的扇出单元和具有扇出单元的薄膜晶体管（TFT）阵列基板。扇出单元包括：绝缘基板; 第一布线层，其形成在所述绝缘基板上并连接到焊盘; 第二布线层，其形成在绝缘基板上并连接到TFT; 以及电阻控制器，其连接在第一布线层和第二布线层之间，并且包括平行于第一布线层延伸的多个第一电阻器和垂直于第一电阻器延伸的多个第二电阻器，并交替地连接到第一电阻器，其中所述第一电阻器比所述第二电阻器长。

92. 发明授权

US07323371B2 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same 有权
标题翻译：具有低介电常数的半导体器件的绝缘层的沉积方法，使用其的薄膜晶体管基板及其制造方法
公开(公告)号：US07323371B2
公开(公告)日：2008-01-29
申请号：US11071544
申请日：2005-03-03
申请人： Sung-Hoon Yang , Wan-Shick Hong , Kwan-Wook Jung
发明人： Sung-Hoon Yang , Wan-Shick Hong , Kwan-Wook Jung
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： G02F1/136227 , C23C16/30 , G02F2001/136222 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L27/3244 , H01L29/458 , H01L29/4908 , H01L51/56
摘要： The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.
摘要翻译：本发明涉及一种用于气相沉积低介电绝缘膜的方法，使用其的薄膜晶体管及其制备方法，更具体地涉及可以显着改善蒸气的低介电绝缘膜的气相沉积方法同时保持低介电绝缘膜的性能，从而解决了寄生电容问题，以实现高开口率结构，并且通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时可以减少处理时间，以形成用于半导体器件的保护膜。本发明还涉及使用该方法及其制备方法的薄膜晶体管。

93. 发明申请

US20070268437A1 DISPLAY PANEL 有权
标题翻译：显示面板
公开(公告)号：US20070268437A1
公开(公告)日：2007-11-22
申请号：US11747014
申请日：2007-05-10
申请人： Mee-Hye Jung , Ji-Won Sohn , Sung-Hoon Yang , Jin-Won Park , Seon-Ah Cho
发明人： Mee-Hye Jung , Ji-Won Sohn , Sung-Hoon Yang , Jin-Won Park , Seon-Ah Cho
IPC分类号： G02F1/1337
CPC分类号： G02F1/1343 , G02F1/133707 , G02F1/1393
摘要： In a liquid crystal display device, the device includes a first substrate, a second substrate and a liquid crystal layer interposed therebetween. The first substrate includes a pixel electrode, a thin film transistor connected to the pixel electrode, and also a hitch to connect both a lower and upper electrode of the pixel electrode. The second substrate includes a common electrode having a lower domain division part and an upper domain division part, in which each of domain division part is formed at the position corresponding to the lower and upper electrode of the pixel electrode, respectively. Through the electric field controller connected at both sides of the upper electrode of the pixel electrode, quality of display image can improve without a darkening area occurring at one part of the unit pixel.
摘要翻译：在液晶显示装置中，该装置包括第一基板，第二基板和插入其间的液晶层。第一基板包括像素电极，连接到像素电极的薄膜晶体管，以及连接像素电极的下电极和上电极的连接。第二基板包括具有下畴分割部分和上畴分割部分的公共电极，其中每个畴分割部分分别形成在与像素电极的下电极和上电极相对应的位置。通过连接在像素电极的上部电极的两侧的电场控制器，可以改善显示图像的质量，而不会在单位像素的一部分处发生变暗区域。

94. 发明申请

US20070212827A1 Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same 有权
标题翻译：形成硅层的方法和使用其形成显示器基板的方法
公开(公告)号：US20070212827A1
公开(公告)日：2007-09-13
申请号：US11675935
申请日：2007-02-16
申请人： Kunal Girotra , Byoung-June Kim , Sung-Hoon Yang
发明人： Kunal Girotra , Byoung-June Kim , Sung-Hoon Yang
IPC分类号： H01L21/84
CPC分类号： H01L29/04 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L27/1296
摘要： A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF4) gas, a nitrogen trifluoride (NF3) gas, SiF4—H2 gas and a mixture thereof Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrfluoride (SiF4), hydrogen (H2) and argon (Ar),
摘要翻译：一种制造硅层的方法包括：使用第一反应气体，通过等离子体增强化学气相沉积方法来预处理在衬底上形成的氮化硅层的表面，所述第一反应气体包括四氟化硅（SiF 4 N 4 O 4））气体，三氟化氮（NF 3 3）气体，SiF 4 H 2 H 2气体及其混合物然后，形成硅层通过等离子体增强化学气相沉积方法在预处理的氮化硅层上，使用包括包括四氟化硅（SiF 4 N 4），氢（H 2 O 3）的气体混合物的第二反应气体，）和氩（Ar），

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