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91. 发明专利

JPS61288473A PHOTOVOLTAIC DEVICE 失效
公开(公告)号：JPS61288473A
公开(公告)日：1986-12-18
申请号：JP13128585
申请日：1985-06-17
申请人： SANYO ELECTRIC CO
发明人： MURATA KENJI , KISHI YASUO
IPC分类号： H01L31/10 , H01L31/0236 , H01L31/04 , H01L31/18
摘要： PURPOSE:To prevent the reflection loss of the incident light and the specific resistance from increasing, and the light transmission factor and the close adhesive ability to keep in close contact with the supporting substrate from decreasing, and to improve the photoelectric converting efficiency, by employing a light receiving face electrode which is made of transparent conductive oxide (TCO) having a mean grain size of 500-2000Angstrom and which has an uneven face having height differences of about 1000-5000Angstrom at the side interfacing with the semiconductor light active layer and having intervals between the respective convexes of about 2000-10000Angstrom . CONSTITUTION:A TCO layer 5 having a mean grain size of about 500-2000Angstrom is coated on the approximately uniform insulating surface of a transparent supporting substrate 1 such as glass. Next, the TCO layer 5 is etched toward the supporting substrate 1 from the exposed face. The etching is stopped at the midway of the thickness, and thus the exposed face has fine uneveness appropriate for a light receiving face electrode 2 of a photovoltaic device. In this way, the light receiving face electrode 2 having triangle cone shaped uneven faces 2tex having height differences of about 1000-5000Angstrom and intervals between the respective convexes of about 2000-10000Angstrom can be formed.

92. 发明专利

JPS6140929B2 失效
公开(公告)号：JPS6140929B2
公开(公告)日：1986-09-11
申请号：JP15486479
申请日：1979-11-28
申请人： SANYO ELECTRIC CO
发明人： TAKAHASHI OSAMU , KISHI YASUO
IPC分类号： G01J5/02 , G01J1/02 , G01J5/34

93. 发明专利

JPS6130081A Manufacture of photovoltaic device 失效
标题翻译：光电器件的制造
公开(公告)号：JPS6130081A
公开(公告)日：1986-02-12
申请号：JP15170484
申请日：1984-07-20
申请人： Sanyo Electric Co Ltd
发明人： KISHI YASUO , TANIGUCHI HIROYUKI
IPC分类号： H01L31/042 , H01L31/0224 , H01L31/04
CPC分类号： H01L31/022425 , Y02E10/50
摘要： PURPOSE:To remove curling portions at the edges of an electrode film and prevent the occurrence of disconnection, by etching a photoactive layer located at an adjacent spacing part of an electrode film, and then subjecting this electrode film to etching using the same mask as that used to etch the phototactive layer. CONSTITUTION:A first electrode film which is divided into film parts 2a, 2b,..., a photoactive layer 3 and a second electrode film 4 are successively deposited on one main surface of a substrate 1 having insulating properties. A photoresist film 5 is deposited on the film 4 through an adjacent spacing part ab which is to be removed. A second electrode part 4' at the spacing part ab is removed. The exposed photoactive part 3' is removed by etching using the film 5 as a mask. As a result, the photoactive layer 3 is divided into individual parts 3a, 3b, and the first electrode film pats 2b in one region is partially exposed. The second electrode film parts 4a, 4b are etched. As a result, curling edges 4ae, 4be are removed. The film 5 is removed, and a connecting electrode film 6ab which connects the first electrode film part 2b and the second electrode film part 4a is formed.
摘要翻译：目的：为了除去电极膜的边缘处的卷曲部分，防止断开的发生，通过蚀刻位于电极膜的相邻间隔部分的光敏层，然后使用与该电极膜相同的掩模对该电极膜进行蚀刻用于蚀刻光敏层。构成：在具有绝缘性的基板1的一个主表面上依次层叠分为膜部2a，2b，...，光活性层3和第二电极膜4的第一电极膜。光致抗蚀剂膜5通过相邻的要去除的间隔部分ab而沉积在膜4上。去除间隔部分ab处的第二电极部分4'。通过使用膜5作为掩模通过蚀刻去除曝光的光活性部分3'。结果，光活性层3被分成单个部分3a，3b，并且一个区域中的第一电极膜pat2被部分暴露。第二电极膜部分4a，4b被蚀刻。结果，去除了卷曲边缘4ae，4be。除去膜5，并且形成连接第一电极膜部分2b和第二电极膜部分4a的连接电极膜6ab。

94. 发明专利

JPS6116579A Integrated type solar cell 失效
标题翻译：集成型太阳能电池
公开(公告)号：JPS6116579A
公开(公告)日：1986-01-24
申请号：JP13829084
申请日：1984-07-03
申请人： Sanyo Electric Co Ltd
发明人： MURATA KENJI , KISHI YASUO , SHIBUYA TAKASHI
IPC分类号： H01L31/04 , H01L27/142
CPC分类号： H01L31/046 , Y02E10/50
摘要： PURPOSE:To eliminate the state of the mutual short circuits of cells without removing an unnecessary transparent conductive film formed onto the side surface of a light-transmitting insulating substrate by shaping the length of a junction electrode in size shorter than that of a transparent conductive film in the direction orthogonal to the direction of arrangement of adjacent cells. CONSTITUTION:Transparent conductive films 2a, 2b are shaped onto a light- transmitting insulating substrate 1 through a vacuum deposition method, etc., and partitioned so as to correspond to each cell S1, S2 by forming a groove 3 through laser machining, and an amorphous semiconductor film 14, a back electrode film 15 and a junction electrode 16 are laminated and formed onto the transparent conductive films. The junction electrode 16 is shaped in size shorter than width size in the direction orthogonal to the direction of arrangement of cells in the transparent conductive film 2b constituting the cell S2, and brought into contact only with the back electrode 15 for the cell S1 and the transparent conductive film 2b in the cell S2. Accordingly, a short circuit between the adjacent cells S1, S2 through the transparent conductive films 2d, 2c due to a contact with the transparent conductive film 2d of the junction electrode 16 is prevented.
摘要翻译：目的：通过使接合电极的长度比透明导电膜的尺寸更短的尺寸来消除电池的相互短路的状态，而不会去除形成在透光绝缘基板的侧表面上的不必要的透明导电膜在与相邻单元的布置方向正交的方向上。构成：透明导电膜2a，2b通过真空沉积法等形成在透光绝缘基板1上，并且通过激光加工形成凹槽3而对应于每个单元S1，S2进行分隔，并且非晶半导体膜14，背面电极膜15和接合电极16层叠并形成在透明导电膜上。接合电极16的尺寸比构成电池S2的透明导电膜2b中的电池的配置方向正交的方向的宽度尺寸小，并且仅与电池S1的背面电极15接触，透明导电膜2b。因此，防止了由于与接合电极16的透明导电膜2d接触而导致的透明导电膜2d，2c的相邻单元S1，S2之间的短路。

95. 发明专利

JPS6047543B2 JPS6047543B2 - 失效
公开(公告)号：JPS6047543B2
公开(公告)日：1985-10-22
申请号：JP18850880
申请日：1980-12-29
申请人： Sanyo Electric Co
发明人： KISHI YASUO
IPC分类号： G01J5/02 , G01J1/02 , G01J5/34 , G08B13/00 , G08B13/191
CPC分类号： G01J5/34

96. 发明专利

JPS59195877A Manufacture of photovoltaic device 失效
标题翻译：光电器件的制造
公开(公告)号：JPS59195877A
公开(公告)日：1984-11-07
申请号：JP7028683
申请日：1983-04-20
申请人： Sanyo Electric Co Ltd
发明人： KISHI YASUO
IPC分类号： H01L31/04 , H01L27/142
CPC分类号： H01L31/046 , Y02E10/50
摘要： PURPOSE:To reduce the space of isolation by laminating and applying a semiconductor film and a second electrode film on a plurality of first electrode films through the same mask, forming a plurality of photoelectric conversion regions, exchanging the mask and applying a connecting electrode film. CONSTITUTION:First electrode films 12a... consisting of a transparent oxidizing electrode material are formed on a glass insulating substrate 10 by using a first mask, semiconductor films 14a..., which have P-I-N junctions and are composed of amorphous silicon, are applied by a second mask 13, and second electrode films 15a... consisting of Al are evaporated by using the second mask 13 as it is, thus forming photoelectric conversion regions 16a.... Connecting electrode films 19ab, 19bc, composed of Ti, etc., are evaporated through a third mask 18. Since the width W3 of the mask section of the third mask 18 can be taken to a wide value, the width W2 of the mask section of the second mask 13 can be set to minimum mask width, and the space of isolation can be reduced.
摘要翻译：目的：为了通过相同的掩模在多个第一电极膜上层压和施加半导体膜和第二电极膜以减少隔离空间，形成多个光电转换区域，更换掩模并施加连接电极膜。构成：通过使用第一掩模在玻璃绝缘基板10上形成由透明氧化电极材料构成的第一电极膜12a ...，被应用于具有PIN结的并且由非晶硅构成的半导体膜14a ... 通过第二掩模13和由Al构成的第二电极膜15a ...通过使用第二掩模13被蒸发，从而形成光电转换区16a ....由Ti构成的连接电极膜19ab，19bc，通过第三掩模18蒸发。由于第三掩模18的掩模部分的宽度W3可以被取为宽值，所以可以将第二掩模13的掩模部分的宽度W2设置为最小掩模宽度，隔离空间可以减小。

97. 发明专利

JPS59161883A Etching method for thin film photosemiconductor layer in photovoltaic device 失效
标题翻译：光电器件薄膜光电子层蚀刻方法
公开(公告)号：JPS59161883A
公开(公告)日：1984-09-12
申请号：JP3774883
申请日：1983-03-07
申请人： Sanyo Electric Co Ltd
发明人： KISHI YASUO
IPC分类号： H01L31/042 , H01L21/306 , H01L31/18
CPC分类号： H01L31/18
摘要： PURPOSE:To enable to suppress pin hole being bored at the time of etching by a method wherein a thin film semiconductor layer is etched via the window of a patterned resist layer, after adhering the resist layer. CONSTITUTION:The resist layer 8 is adhered on the semiconductor layer 4 to be etched. Next, the layer 8 is exposed to light via a photo mask 12 placed on a base film 7. At this time, the adhesion force of the layer 8 to the film 7 varies at the exposed part and the unexposed part. As a result, when a resist film 11 wherein the adhesion force between the film 7 at the exposed part and the layer is deteriorated is stripped off from the film 7 side, deteriorated resist layers 8a-8c at the exposed parts remain on the layer 4. Then, the layer 4 is etched with the layers 8a-8c as a mask. At this time, the layers 8a-8c form a perfect mask without exposing the semiconductor layers 4a-4c at the part which should not be etched, and accordingly do not come to bore pin holes in the layers 4a-4c of this part.
摘要翻译：目的：通过其中通过图案化的抗蚀剂层的窗口蚀刻薄膜半导体层的方法，在蚀刻之后，在粘附抗蚀剂层之后，能够抑制针孔被钻孔。构成：将抗蚀剂层8粘附在要蚀刻的半导体层4上。接下来，层8通过放置在基膜7上的光掩模12曝光。此时，层8对膜7的粘附力在曝光部分和未曝光部分变化。结果，当从膜7剥离其中暴露部分的膜7与层之间的粘合力劣化的抗蚀剂膜11被剥离时，暴露部分处的劣化的抗蚀剂层8a-8c保留在层4上然后，以层8a-8c作为掩模蚀刻层4。此时，层8a-8c形成完美的掩模，而不会使半导体层4a-4c暴露在不被蚀刻的部分，因此不会在该部分的层4a-4c中钻孔。

98. 发明专利

JPS5882136A INFRARED RAY DETECTOR 失效
公开(公告)号：JPS5882136A
公开(公告)日：1983-05-17
申请号：JP18490682
申请日：1982-10-20
申请人： SANYO ELECTRIC CO
发明人： KUWANO YUKINORI , NAKANO SHIYOUICHI , KISHI YASUO , YOKOO TOSHIAKI , SHIBATA KENICHI
IPC分类号： G01J5/02 , G01J5/34 , G01J5/62
摘要： PURPOSE:To raise detection accuracy by eliminating shifting due to heat in the relative position by means of making with the same material the vibration material that constitutes an infrared ray passing section and a section that does not pass infrared ray. CONSTITUTION:When piezo electric vibrators 4 and 5 vibrate with specified frequencies, the state that the infrared ray passing section 9 of opposing sections 6 and 7 overlap mutually by opposition and the state that a section 8 where the infrared ray does not pass and the section 9 where infrared ray passes overlap mutually are repeated periodically, and the infrared ray that passes through a convex lens 2 is periodically interrupted. The piezoelectric vibrators 4 and 5 have the same material and the same thermal expansion coefficient, and thereby the relative positions of the opposing sections 6 and 7 do not change even if the environmental temperature changes, and the periodic interruption of infrared ray is assured. Surely and periodically interrupted infrared light is thereby made incident on the infrared ray detection section, making it possible to perform highly accurate infrared ray detection.

99. 发明专利

JPS5761924A Infrared ray detector 失效
标题翻译：红外雷达探测器
公开(公告)号：JPS5761924A
公开(公告)日：1982-04-14
申请号：JP13690680
申请日：1980-09-30
申请人： Sanyo Electric Co Ltd
发明人： KUWANO YUKINORI , NAKANO SHIYOUICHI , KISHI YASUO , YOKOO TOSHIAKI , SHIBATA KENICHI
IPC分类号： G01J5/02 , G01J1/02 , G01J5/34
CPC分类号： G01J5/34
摘要： PURPOSE:To obtain an inexpensive infrared rays detector, by storing an assembly body of a pyroelectric element for infrared rays in a package made of resin. CONSTITUTION:An element composed of a pyroelectric pellet for infrared rays 14 made up by a crystal of lithium tantalate, a surface electrode 15 and a back electrode 16 made up by Ni-Cr vapor deposited film, a metallic supporting stand 17 made of aluminum or phosphor bronze and an electric conductive adhesive 18 made up by silver paste, is stuck to the back lead body composed of a metallic rectangular part 19a and a lead part 19b by an electric conductive adhesive 20. An assembly body of the element is accomodated in a resin package 27 such as polyethylene in the form of putting between it through a surface electrode 21 made of phosphor bronze and having a circular opening 23 at the central part and also, having inclination parts 24a, 24b and an opening 28 of the package 27 is sealed by a resin 30 such as epoxy resin. Infrared rays are made incident from a thin transmission window 29 of the package 27. Hereby, an inexpensive infrared rays detector is obtained.
摘要翻译：目的：为了获得便宜的红外线检测器，通过将用于红外线的热电元件的组装体储存在由树脂制成的包装中。构成：由由钽酸锂的晶体构成的红外线用热电片14，由Ni-Cr气相沉积膜构成的表面电极15和背面电极16构成的元件，由铝制成的金属支架17或磷青铜和由银膏制成的导电粘合剂18通过导电粘合剂20粘附到由金属矩形部分19a和引线部分19b组成的背部引线体上。元件的组装体被容纳在通过由磷青铜制成的表面电极21和在中心部分具有圆形开口23并且具有倾斜部分24a，24b和封装27的开口28的形式的聚乙烯树脂封装27，用诸如环氧树脂的树脂30密封。红外线从封装27的薄透射窗29入射。由此，获得廉价的红外线检测器。

100. 发明专利

JPS5749825A Infrared ray sensor 失效
标题翻译：红外线传感器
公开(公告)号：JPS5749825A
公开(公告)日：1982-03-24
申请号：JP12637080
申请日：1980-09-10
申请人： Sanyo Electric Co Ltd
发明人： KISHI YASUO
IPC分类号： G01J5/02 , G01J1/02 , G01J5/34 , H01L37/02
CPC分类号： H01L37/02
摘要： PURPOSE:To increase an S/N radio, by providing an electrode on the entire back surface of a pyroelectric pellet 1 generating electric charges in response to the amount of incident infrared ray, providing electrodes on the inside from the outer edges on the upper surface, and eliminating popcorn noises. CONSTITUTION:The back surface electrode 2 is formed on the entire back surface of the pyroelectric pellet 1 with a thickness of about 50mum formed by lithium tantalate crystal and the like generating the electric charge in response to the variation in the incident infrared ray by vacuum evaporation of nichrome. On the upper surface, two electrodes 3a and 3b, e.g. for sensing the human intrusion, are arranged to face each other. Nichrome is evaporated on the part whose width is (a) from the edges of the inside in their three sides, and lead wires 5a and 5b are provided. When a man moves to the direction of an arrow A, the electric charges generated in the electrodes 3a and 3b are varied, and a signal appears in the lead wires 5a and 5b. If the electrodes 3a and 3b are irradiated by a heating lamp and the like, the equal electric charges are generated in the electrodes 3a and 3b, and the output signal is generated. Thus, the popcorn noises due to the discharge at the time of high electric field generation can be prevented, and the S/N ratio is greatly increased.
摘要翻译：目的：为了增加S / N无线电装置，通过在热电粒子1的整个后表面上提供响应于入射的红外线的量产生电荷的电极，在上表面的外边缘的内侧设置电极，并消除爆米花噪音。构成：背面电极2形成在热电沉淀1的整个后表面上，厚度约为50μm，由钽酸锂晶体等形成，响应于通过真空蒸发的入射红外线的变化而产生电荷的镍铬合金。在上表面上，两个电极3a和3b，例如，用于感测人的入侵，被布置为面对彼此。镍铬合金在其三边的内侧的边缘部分的宽度为（a）的部分蒸发，并且提供导线5a和5b。当人移动到箭头A的方向时，在电极3a和3b中产生的电荷变化，并且信号出现在引线5a和5b中。如果电极3a和3b被加热灯等照射，则在电极3a和3b中产生相等的电荷，并且产生输出信号。因此，可以防止由于高电场产生时的放电引起的爆米花噪声，并且S / N比大大增加。

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