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    • 93. 发明授权
    • Planarization films for advanced microelectronic applications and devices and methods of production thereof
    • 用于先进微电子应用的平面化膜及其制造方法
    • US07910223B2
    • 2011-03-22
    • US10518201
    • 2003-10-27
    • Wei HuangJoseph KennedyRonald Katsanes
    • Wei HuangJoseph KennedyRonald Katsanes
    • B32B27/42B28B19/00G03F7/00C08G8/04
    • H01L21/02118C04B26/12C04B2111/00482C08J7/02C08J2361/00C23F1/10C23F1/44C23F3/00C23F3/04H01L21/31051H01L21/312Y10T428/31942C04B2103/0093C04B2103/40
    • A planarization composition is disclosed herein that comprises: a) a structural constituent; and b) a solvent system, wherein the solvent system is compatible with the structural constituent and lowers the lowers at least one of the intermolecular forces or surface forces components of the planarization composition. A film that includes this planarization composition is also disclosed. In addition, another planarization composition is disclosed herein that comprises: a) a cresol-based polymer compound; and b) a solvent system comprising at least one alcohol and at least one ether acetate-based solvent. A film that includes this planarization composition is also disclosed. A layered component is also disclosed herein that comprises: a) a substrate having a surface topography; and b) a planarization composition or a film such as those described herein, wherein the composition is coupled to the substrate. Methods of forming a planarization compositions are also disclosed herein that comprise: a) providing a structural constituent; b) providing a solvent system, wherein the solvent system is compatible with the structural constituent and lowers at least one of the intermolecular forces or surface forces components of the planarization composition; and c) blending the structural constituent and the solvent system to form a planarization composition. Methods of forming a film are also disclosed that comprise: a) providing a planarization composition such as those disclosed herein; and b) evaporating at least part of the solvent system to form a film.
    • 本文公开了一种平面化组合物,其包括:a)结构成分; 和b)溶剂体系,其中所述溶剂体系与所述结构组分相容并降低所述平坦化组合物的至少一种分子间力或表面力组分。 还公开了包含该平坦化组合物的膜。 此外,本文公开了另外的平坦化组合物,其包括:a)甲酚基聚合物化合物; 和b)包含至少一种醇和至少一种乙酸乙烯酯类溶剂的溶剂体系。 还公开了包含该平坦化组合物的膜。 本文还公开了一种分层组件,其包括:a)具有表面形貌的衬底; 和b)平面化组合物或诸如本文所述的那些的膜,其中所述组合物与所述基材偶联。 本文还公开了形成平坦化组合物的方法,其包括:a)提供结构成分; b)提供溶剂系统,其中所述溶剂体系与所述结构组分相容并降低所述平坦化组合物的分子间力或表面力组分中的至少一种; 和c)混合结构成分和溶剂体系以形成平坦化组合物。 还公开了形成膜的方法,其包括:a)提供诸如本文公开的那些的平坦化组合物; 和b)蒸发至少部分溶剂系统以形成膜。
    • 96. 发明申请
    • Polyisobutylene-based block anionomers and cationomers and synthesis thereof
    • 聚异丁烯类嵌段阴离子和阳离子及其合成
    • US20070203302A1
    • 2007-08-30
    • US11605025
    • 2006-11-28
    • Joseph KennedyZheng Fang
    • Joseph KennedyZheng Fang
    • C08F293/00
    • C08F297/00C08F8/06C08F8/12C08F8/22C08F293/005C08F2438/01C08F2810/30C08F2810/40Y10S525/901C08F112/12C08F8/42C08F110/10
    • Various novel block cationomers comprising polyisobutylene (PIB) and poly(2-dimethylamino)ethyl methacrylate) (PDMAEMA) segments have been synthesized and characterized. The specific targets were various molecular weight diblocks (PDMAEMA+) and triblocks (PDMAEMA+-b-PIB-b-PDMAEMA+) with the PIB blocks in the DPn=50-200 (Mn=3,000-9,000 g/mol) range connected to blocks of PDMAEMA+ cations in the DPn=5-20 range. The overall synthetic strategy for the preparation of these block cationomers comprised four steps: 1) Synthesis by living cationic polymerization of mono- and di-allyltelechelic polyisobutylenes, 2) End group transformation to obtain PIBs fitted with termini capable of mediating the atom transfer radical polymerization (ATRP) of DMAEMA, 3) ATRP of DMAEMA and 4) Quaternization of PDMAEMA to PDMAEMA+I− by CH3I. Kinetic and model experiments provided guidance to develop convenient synthesis methods. The microarchitecture of PIB-PDMAEMA di-and triblock and the corresponding block cationomers were confirmed by 1H NMR and FTIR spectroscopy and solubility studies.
    • 已经合成了各种包含聚异丁烯(PIB)和聚(2-二甲基氨基)乙基甲基丙烯酸酯)(PDMAEMA)链段的新型嵌段阳离子。 具体目标是各种分子量二嵌段(PDMAEMA +)和三嵌段(PDMAEMA-SUP-B-PIB-b-PDMAEMA +)以及 与PDMAEMA +阳离子的嵌段连接的DPA块中的PIB嵌段(DPN-N)= 50-200(M n n = 3,000-9,000g / mol) 在DP = 5-20范围内。 制备这些嵌段阳离子的总体合成策略包括四个步骤:1)通过单 - 和二 - 烯丙基可可聚异丁烯的阳离子聚合合成2)端基转化获得配有能够介导原子转移自由基聚合的末端的PIB (ATRP),3)DMAEMA的ATRP和4)通过CH 3 N取代PDMAEMA与PDMAEMA的反应。 动力学和模型实验为开发方便的合成方法提供了指导。 通过1 H NMR和FTIR光谱和溶解度研究证实了PIB-PDMAEMA二 - 和三嵌段的微结构和相应的嵌段阳离子。