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91. 发明授权

US06963101B2 Films doped with carbon for use in integrated circuit technology 失效
标题翻译：掺杂碳的薄膜用于集成电路技术
公开(公告)号：US06963101B2
公开(公告)日：2005-11-08
申请号：US10789981
申请日：2004-03-02
申请人： Ronald A. Weimer , John T. Moore
发明人： Ronald A. Weimer , John T. Moore
IPC分类号： H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L21/0276 , H01L21/02126 , H01L21/02219 , H01L21/02271 , H01L21/31116 , H01L21/3145 , H01L21/3146 , H01L21/3148 , H01L21/31604 , H01L21/31633 , H01L21/76802 , H01L21/76829 , H01L21/76897 , H01L27/10811 , H01L27/10855 , H01L27/10888 , H01L28/91 , Y10S257/90 , Y10S438/97
摘要： The invention pertains to films comprising silicon, oxygen and carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.
摘要翻译：本发明涉及包含硅，氧和碳的膜以及集成电路技术中的膜的使用，例如电容器结构，DRAM构造，半导体材料组件，蚀刻工艺以及用于形成电容器，DRAM和半导体材料组件的方法。

92. 发明授权

US06908868B2 Gas passivation on nitride encapsulated devices 有权
标题翻译：氮化物封装器件上的气体钝化
公开(公告)号：US06908868B2
公开(公告)日：2005-06-21
申请号：US10377495
申请日：2003-02-27
申请人： Ronald A. Weimer , Fernando Gonzalez
发明人： Ronald A. Weimer , Fernando Gonzalez
IPC分类号： H01L21/28 , H01L21/30 , H01L21/318 , H01L23/31 , H01L29/51 , H01L21/26
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/2822 , H01L21/3003 , H01L21/3185 , H01L23/3171 , H01L29/513 , H01L29/518 , H01L2924/0002 , H01L2924/19041 , H01L2924/00
摘要： A method for passivating at least interfaces between structures formed from a conductive or semiconductive material and adjacent dielectric structures so as to reduce a concentration of dangling silicon bonds at these interfaces and to reduce or eliminate the occurrence of unwanted voltage changes across the dielectric structures. The method includes exposing at least the interfaces to at least hydrogen species and forming an encapsulant layer that substantially contains the hydrogen species in the presence of the interfaces. The encapsulant layer substantially prevents the hydrogen species from escaping therethrough as processes that require temperatures of at least about 400° C. or of at least about 600° C. are conducted. Once such high temperature processes have been completed, portions of the encapsulant layer may be removed. Methods and systems for passivating semiconductor device structures are also disclosed, as are semiconductor device structures passivated according to the disclosed methods.
摘要翻译：一种用于钝化由导电或半导体材料和相邻电介质结构形成的结构之间的至少界面的方法，以便减少在这些界面处的悬挂硅键的浓度，并且减少或消除跨介电结构的不期望的电压变化的发生。该方法包括至少将界面暴露于至少氢物质并形成在界面存在下基本上含有氢物质的密封剂层。当需要至少约400℃或至少约600℃的温度的工艺时，密封剂层基本上防止氢物质逸出。一旦这样的高温过程完成，可以去除部分密封剂层。还公开了钝化半导体器件结构的方法和系统，半导体器件结构根据所公开的方法钝化。

93. 发明授权

US06881636B2 Methods of forming deuterated silicon nitride-containing materials 有权
标题翻译：形成氘代含氮化硅材料的方法
公开(公告)号：US06881636B2
公开(公告)日：2005-04-19
申请号：US10612836
申请日：2003-07-03
申请人： Ronald A. Weimer , Lyle D. Breiner
发明人： Ronald A. Weimer , Lyle D. Breiner
IPC分类号： C23C16/30 , C23C16/34 , H01L21/28 , H01L21/30 , H01L21/314 , H01L21/318 , H01L21/336 , H01L21/8242 , H01L21/8244 , H01L29/51
CPC分类号： H01L21/0214 , C23C16/308 , C23C16/345 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/28176 , H01L21/28194 , H01L21/3003 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/10873 , H01L27/11 , H01L29/513 , H01L29/6659 , H01L29/66825
摘要： The invention includes methods of forming deuterated silicon nitride-containing materials from at least one deuterated nitrogen compound in combination with one or more silicon-containing compounds that do not contain hydrogen isotopes. Suitable deuterated nitrogen compounds can comprise, for example, NH2D, NHD2 and ND3. Suitable silicon-containing compounds include, for example, SiCl4 and Si2Cl6. Deuterated silicon nitride-containing materials of the present invention can be incorporated into, for example, transistor devices. The transistor devices can be utilized in DRAM cells, which in turn can be utilized in electronic systems.
摘要翻译：本发明包括从至少一种氘代氮化合物与一种或多种不含氢同位素的含硅化合物组合形成氘代含氮化硅材料的方法。合适的氘代氮化合物可以包括例如NH 2，NH 2，N 3和N 3。合适的含硅化合物包括例如SiCl 4和Si 2 Cl 6 6。本发明的含氘代的含氮化硅的材料可以结合到例如晶体管器件中。晶体管器件可以用在DRAM单元中，这又可以用于电子系统中。

94. 发明授权

US06849544B2 Forming a conductive structure in a semiconductor device 失效
标题翻译：在半导体器件中形成导电结构
公开(公告)号：US06849544B2
公开(公告)日：2005-02-01
申请号：US10454218
申请日：2003-06-04
申请人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
发明人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
IPC分类号： H01L21/28 , H01L21/321 , H01L29/49 , H01L21/44
CPC分类号： H01L29/4941 , H01L21/28061 , H01L21/2807 , H01L21/32105
摘要： A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.
摘要翻译：用于半导体器件的导电结构包括多层结构。第一层包括含硅的材料，例如多晶硅和锗锗。在第一层上形成阻挡层，阻挡层包括金属硅化物或金属硅化物氮化物。在阻挡层上形成顶部导电层。顶部导电层可以包括金属或金属硅化物。可以进行选择性氧化以减少包含多层结构的结构中所选材料的氧化量，例如多层导电结构。选择性氧化在单晶片快速热处理系统中进行，其中使用包括氢的所选择的环境来确保所选择的材料如钨或金属氮化物的低氧化。

95. 发明授权

US06696336B2 Double sided container process used during the manufacture of a semiconductor device 有权
标题翻译：在制造半导体器件期间使用的双面容器工艺
公开(公告)号：US06696336B2
公开(公告)日：2004-02-24
申请号：US09855217
申请日：2001-05-14
申请人： Scott J. DeBoer , Ronald A. Weimer , John T. Moore
发明人： Scott J. DeBoer , Ronald A. Weimer , John T. Moore
IPC分类号： H01L218242
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76895 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/41725
摘要： A method used during the formation of a semiconductor device comprises providing a wafer substrate assembly comprising a plurality of digit line plug contact pads and capacitor storage cell contact pads which contact a semiconductor wafer. A dielectric layer is provided over the wafer substrate assembly and etched to expose the digit line plug contact pads, and a liner is provided in the opening. A portion of the digit line plug is formed, then the dielectric layer is etched again to expose the capacitor storage cell contact pads. A capacitor bottom plate is formed to contact the storage cell contact pads, then the dielectric layer is etched a third time using the liner and the bottom plate as an etch stop layer. A capacitor cell dielectric layer and capacitor top plate is formed which provides a double-sided container cell. An additional dielectric layer is formed, then the additional dielectric layer, cell top plate, and the cell dielectric are etched to expose the digit line plug portion. Finally, a second digit line plug portion is formed to contact the first plug portion. A novel structure resulting from the inventive method is also discussed.
摘要翻译：在形成半导体器件期间使用的方法包括提供晶片衬底组件，其包括接触半导体晶片的多个数字线插头接触焊盘和电容器存储单元接触焊盘。电介质层设置在晶片衬底组件上并被蚀刻以暴露数字线插头接触垫，并且衬套设置在开口中。形成数字线插头的一部分，然后再次蚀刻电介质层以暴露电容器存储单元接触垫。电容器底板形成为与存储单元接触焊盘接触，然后使用衬垫和底板作为蚀刻停止层，第三次蚀刻电介质层。形成电容器电介质层和电容器顶板，其提供双面容器电池。形成附加的电介质层，然后蚀刻附加的电介质层，电池顶板和电池电介质以露出数字线插头部分。最后，形成第二数字线插头部分以接触第一插头部分。还讨论了由本发明方法产生的新颖结构。

96. 发明授权

US06592661B1 Method for processing wafers in a semiconductor fabrication system 失效
标题翻译：在半导体制造系统中处理晶片的方法
公开(公告)号：US06592661B1
公开(公告)日：2003-07-15
申请号：US09028979
申请日：1998-02-25
申请人： Randhir P. S. Thakur , Ronald A. Weimer
发明人： Randhir P. S. Thakur , Ronald A. Weimer
IPC分类号： C30B102
CPC分类号： C30B31/12
摘要： A method of manufacturing semiconductor wafers in a processing chamber having at least one radiant heat source is provided. The method includes the steps of applying a predetermined amount of power to the radiant heat source and positioning a wafer within the processing chamber. The predetermined amount of power applied to the at least one radiant heat source is set such that the wafer reaches a predetermined temperature in a predetermined amount of time for carrying out a desired process in the processing chamber. The processing chamber is particularly suited for very low pressure environments and may be used to form HSG in a clustered or non-clustered system. A reflective plate may be used so that the radiated properties of the wafer are substantially independent of the emissivity of the wafer thereby minimizing emissivity variation from one wafer to another. Another plate may be used to form an isothermal cavity between the plate and the wafer to minimize emissivity variation from one wafer to another.
摘要翻译：提供了在具有至少一个辐射热源的处理室中制造半导体晶片的方法。该方法包括以下步骤：向辐射热源施加预定量的功率并将晶片定位在处理室内。设置施加到至少一个辐射热源的预定量的功率，使得晶片在预定时间内达到预定温度，以在处理室中进行所需的处理。处理室特别适用于非常低压的环境，并可用于在集群或非集群系统中形成HSG。可以使用反射板，使得晶片的辐射特性基本上与晶片的发射率无关，从而使从一个晶片到另一个晶片的发射率变化最小化。可以使用另一个板来在板和晶片之间形成等温腔，以使从一个晶片到另一个晶片的发射率变化最小化。

97. 发明授权

US06544908B1 Ammonia gas passivation on nitride encapsulated devices 有权
标题翻译：氮气封装装置上的氨气钝化
公开(公告)号：US06544908B1
公开(公告)日：2003-04-08
申请号：US09650784
申请日：2000-08-30
申请人： Ronald A. Weimer , Fernando Gonzalez
发明人： Ronald A. Weimer , Fernando Gonzalez
IPC分类号： H01L2126
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/2822 , H01L21/3003 , H01L21/3185 , H01L23/3171 , H01L29/513 , H01L29/518 , H01L2924/0002 , H01L2924/19041 , H01L2924/00
摘要： A method for passivating at least interfaces between structures formed from a material including silicon and adjacent dielectric structures so as to reduce a concentration of dangling silicon bonds at these interfaces and to reduce or eliminate the occurrence of unwanted voltage changes across the dielectric structures. The method includes disassociating ammonia so as to expose at least the interfaces to at least hydrogen species derived from the ammonia and forming an encapsulant layer that is positioned so as to substantially contain the hydrogen species in the presence of the interfaces. The hydrogen-passivation reduces a concentration of dangling silicon bonds at the interfaces by as much as about two orders of magnitude or greater. The encapsulant layer, which may include a silicon nitride, substantially prevents the hydrogen species from escaping therethrough as processes that require temperatures of at least about 400° C. or of at least about 600° C. are conducted. Once such high temperature processes have been completed, portions of the encapsulant layer may be removed, as needed, to provide access to features of the semiconductor device structure that underlie the encapsulant layer. Methods and systems for passivating semiconductor device structures are also disclosed, as are semiconductor device structures that have been passivated in accordance with the disclosed methods.
摘要翻译：一种用于钝化由包括硅和相邻电介质结构的材料形成的结构之间的至少界面的方法，以便减少在这些界面处的悬挂硅键的浓度，并且减少或消除跨介电结构的不期望的电压变化的发生。该方法包括使氨分解，以至少将界面暴露于至少衍生自氨的氢物质，并形成在界面存在下基本上含有氢物质的密封剂层。氢钝化将界面处的悬挂硅键的浓度降低了大约两个数量级或更多。可以包括氮化硅的密封剂层基本上防止氢物质从其中逸出，因为进行需要至少约400℃或至少约600℃的温度的工艺。一旦完成了这样的高温处理，就可以根据需要去除部分密封剂层，以提供对作为密封剂层的基础的半导体器件结构的特征的访问。还公开了用于钝化半导体器件结构的方法和系统，以及已经根据所公开的方法钝化的半导体器件结构。

98. 发明授权

US6162737A Films doped with carbon for use in integrated circuit technology 有权
公开(公告)号：US6162737A
公开(公告)日：2000-12-19
申请号：US354796
申请日：1999-07-16
申请人： Ronald A. Weimer , John T. Moore
发明人： Ronald A. Weimer , John T. Moore
IPC分类号： H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L21/3115 , H01L21/302 , H01L31/0232
CPC分类号： H01L21/0276 , H01L21/02126 , H01L21/02219 , H01L21/02271 , H01L21/31116 , H01L21/3145 , H01L21/3146 , H01L21/3148 , H01L21/31604 , H01L21/31633 , H01L21/76802 , H01L21/76829 , H01L21/76897 , H01L27/10811 , H01L27/10855 , H01L27/10888 , H01L28/91 , Y10S257/90 , Y10S438/97
摘要： The present invention pertains to films comprising silicon and oxygen that are doped with carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.

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