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91. 发明申请

US20150332970A1 CARRIER WITH THERMALLY RESISTANT FILM FRAME FOR SUPPORTING WAFER DURING SINGULATION 审中-公开
标题翻译：带有耐热膜片的承载架，用于支撑整个波浪期间的波形
公开(公告)号：US20150332970A1
公开(公告)日：2015-11-19
申请号：US14714098
申请日：2015-05-15
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/268 , H01L21/033 , H01L21/3065 , H01L21/683
CPC分类号： H01L21/6836 , H01L21/0337 , H01L21/268 , H01L21/82 , H01L2221/68327 , H01L2221/68336 , H01L2221/68377
摘要： Methods of and carriers for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a carrier for supporting a wafer or substrate in an etch process includes a frame having a perimeter surrounding an inner opening. The frame is composed of a thermally resistant material. The carrier also includes a carrier tape coupled to the frame and disposed at least within the inner opening of the frame. The carrier tape includes a base film.
摘要翻译：描述了半导体晶片切割的方法和载体，每个晶片具有多个集成电路。在一个示例中，用于在蚀刻工艺中支撑晶片或衬底的载体包括具有围绕内部开口的周边的框架。框架由耐热材料组成。载体还包括联接到框架并且至少设置在框架的内部开口内的载带。载带包括基膜。

92. 发明授权

US09165832B1 Method of die singulation using laser ablation and induction of internal defects with a laser 有权
标题翻译：使用激光烧蚀和激光诱导内部缺陷的芯片切割方法
公开(公告)号：US09165832B1
公开(公告)日：2015-10-20
申请号：US14320419
申请日：2014-06-30
申请人： James S. Papanu , Wei-Sheng Lei , Jungrae Park , Alexander Lerner , Brad Eaton , Ajay Kumar
发明人： James S. Papanu , Wei-Sheng Lei , Jungrae Park , Alexander Lerner , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78 , H01L21/304 , H01L21/268 , H01L21/683
CPC分类号： H01L21/78 , H01L21/268 , H01L21/31105 , H01L21/32131 , H01L21/67207 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2221/6834 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method and system of hybrid laser dicing are described. In one embodiment, a method includes focusing a laser beam inside a substrate in regions between integrated circuits, inducing defects inside the substrate in the regions. The method involves patterning a surface of the substrate with a laser scribing process in the regions after inducing the defects in the substrate. The method further involves singulating the integrated circuits at the regions with the induced defects. In another embodiment, a system includes a first laser module configured to focus a laser beam inside a substrate in regions between integrated circuits, inducing defects inside the substrate in the regions. A second laser module is configured to pattern a surface of the substrate with a laser scribing process in the regions after inducing the defects. A tape extender is configured to stretch tape over which the substrate is mounted, singulating the integrated circuits.
摘要翻译：描述了混合激光切割的方法和系统。在一个实施例中，一种方法包括在集成电路之间的区域内将激光束聚焦在衬底内，在区域内的衬底内引起缺陷。该方法包括在引发衬底中的缺陷之后在区域中用激光划线工艺对衬底的表面进行图案化。该方法还涉及在具有诱导缺陷的区域处分离集成电路。在另一个实施例中，系统包括第一激光模块，其被配置为将集束电路之间的区域内的激光束聚焦在衬底内，从而在该区域内的衬底内引起缺陷。第二激光模块被配置为在引发缺陷之后在区域中用激光划线工艺对基板的表面进行图案化。磁带扩展器被配置为拉伸安装基板的带，分离集成电路。

93. 发明申请

US20150287638A1 HYBRID WAFER DICING APPROACH USING COLLIMATED LASER SCRIBING PROCESS AND PLASMA ETCH 审中-公开
标题翻译：混合激光扫描方法和等离子体蚀刻的混合波形方法
公开(公告)号：US20150287638A1
公开(公告)日：2015-10-08
申请号：US14248205
申请日：2014-04-08
申请人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , B23K26/36
CPC分类号： H01L21/78 , B23K26/364 , B23K26/402 , H01L21/02057 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/31105 , H01L21/31127 , H01L21/32131 , H01L21/76224
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a collimated laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用准直激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

94. 发明申请

US20150221505A1 IMPROVED WAFER COATING 审中-公开
标题翻译：改进的涂层
公开(公告)号：US20150221505A1
公开(公告)日：2015-08-06
申请号：US14658102
申请日：2015-03-13
申请人： Jungrae Park , Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Jungrae Park , Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/02 , H01L21/683 , H01L21/308 , B05B3/10 , B05B1/00
CPC分类号： H01L21/02282 , B05B1/00 , B05B3/1014 , B05B3/1035 , H01L21/3081 , H01L21/3086 , H01L21/6715 , H01L21/6835 , H01L21/78 , H01L2221/68327
摘要： Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.
摘要翻译：描述了改进的晶片涂布工艺，装置和系统。在一个实施例中，改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。在一个实施例中，用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。可旋转台具有位于半导体晶片周边之外的向下倾斜区域。该设备包括位于可旋转台上方并被配置为在半导体晶片上分配液体的喷嘴。该装置还包括构造成旋转可旋转台的马达。

95. 发明授权

US09093518B1 Singulation of wafers having wafer-level underfill 有权
标题翻译：具有晶圆级底部填充物的晶片的分割
公开(公告)号：US09093518B1
公开(公告)日：2015-07-28
申请号：US14320390
申请日：2014-06-30
申请人： Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , James S. Papanu , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78
CPC分类号： H01L24/73 , H01L21/563 , H01L21/6836 , H01L21/78 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2224/05009 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/13147 , H01L2224/16145 , H01L2224/16225 , H01L2224/27002 , H01L2224/27009 , H01L2224/2741 , H01L2224/27436 , H01L2224/27831 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/81191 , H01L2224/83191 , H01L2224/92 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/1431 , H01L2924/1434 , H01L2224/27 , H01L2224/11 , H01L2224/73204 , H01L2924/00012 , H01L2924/0665 , H01L2924/06 , H01L2924/00014
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a wafer involves providing a semiconductor wafer having integrated circuits on a front side thereof, and having a wafer-level underfill material layer disposed on the integrated circuits. The method also involves laser irradiating the semiconductor wafer from a backside of the semiconductor wafer to generate defects along dicing streets of the semiconductor wafer, the dicing streets oriented between the integrated circuits. The method also involves, subsequent to the laser irradiating, mechanically singulating the integrated circuits along the dicing streets.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，晶片切割的方法包括在其前侧提供具有集成电路的半导体晶片，并且具有设置在集成电路上的晶片级底部填充材料层。该方法还包括从半导体晶片的背面激光照射半导体晶片，以在半导体晶片的切割街道之间产生缺陷，该切割街道在集成电路之间取向。该方法还包括在激光照射之后，沿着切割街道机械地分离集成电路。

96. 发明授权

US09018079B1 Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean 有权
标题翻译：使用混合激光划线和等离子体蚀刻方法的中间反应后掩模开口清洁的晶片切割
公开(公告)号：US09018079B1
公开(公告)日：2015-04-28
申请号：US14167318
申请日：2014-01-29
申请人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/3065 , H01L21/82 , H01L21/67
CPC分类号： H01L21/67207 , H01L21/02076 , H01L21/3065 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to patterning the mask, the exposed regions of the semiconductor wafer are cleaned with a plasma process reactive to the exposed regions of the semiconductor wafer. Subsequent to cleaning the exposed regions of the semiconductor wafer, the semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。通过激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露半导体晶片在集成电路之间的区域。在对掩模进行图案化之后，用与半导体晶片的暴露区域无关的等离子体处理来清洁半导体晶片的暴露区域。在清洁半导体晶片的暴露区域之后，通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

97. 发明申请

US20150104929A1 METHOD AND APPARATUS FOR DICING WAFERS HAVING THICK PASSIVATION POLYMER LAYER 有权
标题翻译：具有厚度钝化聚合物层的方法和装置
公开(公告)号：US20150104929A1
公开(公告)日：2015-04-16
申请号：US14103529
申请日：2013-12-11
申请人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/67 , H01L21/308
CPC分类号： H01L21/78 , H01L21/3065 , H01L21/3083 , H01L21/3085 , H01L21/67207
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a front surface having a plurality of integrated circuits thereon involves forming a mask layer above the front surface of the semiconductor wafer. The method also involves laser scribing the mask layer and the front surface of the semiconductor wafer to provide scribe lines in the mask layer and partially into the semiconductor wafer. The laser scribing involves use of a dual focus lens to provide a dual focus spot beam. The method also involves etching the semiconductor wafer through the scribe lines to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个示例中，在其上划分具有多个集成电路的正面的半导体晶片的方法包括在半导体晶片的前表面上形成掩模层。该方法还包括对掩模层和半导体晶片的前表面进行激光划线以在掩模层中提供划线并部分地进入半导体晶片。激光划线涉及使用双焦点透镜来提供双焦点光束。该方法还涉及通过划线蚀刻半导体晶片以对集成电路进行分离。

98. 发明申请

US20150079760A1 ALTERNATING MASKING AND LASER SCRIBING APPROACH FOR WAFER DICING USING LASER SCRIBING AND PLASMA ETCH 审中-公开
标题翻译：使用激光切割和等离子体蚀刻替代抛光和激光切割方法
公开(公告)号：US20150079760A1
公开(公告)日：2015-03-19
申请号：US14103515
申请日：2013-12-11
申请人： Wei-Sheng Lei , Ajay Kumar , Brad Eaton
发明人： Wei-Sheng Lei , Ajay Kumar , Brad Eaton
IPC分类号： H01L21/82
CPC分类号： H01L21/82 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/3081 , H01L21/31127 , H01L21/67207 , H01L21/78
摘要： Alternating masking and laser scribing approaches for wafer dicing using laser scribing and plasma etch are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits includes forming a first mask above the semiconductor wafer. The first mask is patterned with a first laser scribing process to provide a patterned first mask with a first plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to patterning the first mask with the first laser scribing process, a second mask is formed above the patterned first mask. The second mask is patterned with a second laser scribing process to provide a patterned second mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. The second plurality of scribe lines is aligned with and overlaps the first plurality of scribe lines. The semiconductor wafer is plasma etched through the second plurality of scribe lines to singulate the integrated circuits.
摘要翻译：描述了使用激光划线和等离子体蚀刻的晶片切割的交替掩模和激光划线方法。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片之上形成第一掩模。利用第一激光划线工艺对第一掩模进行构图，以提供具有暴露集成电路之间的半导体晶片区域的第一多个划线的图案化第一掩模。在通过第一激光划线工艺对第一掩模进行图案化之后，在图案化的第一掩模上方形成第二掩模。利用第二激光划线工艺对第二掩模进行构图，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化第二掩模。第二组划线与第一组划线相对准并重叠。通过第二多个划线对半导体晶片进行等离子体蚀刻，以对集成电路进行分割。

99. 发明申请

US20140004685A1 LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM 有权
标题翻译：激光和等离子切割带双面紫外线固化胶片
公开(公告)号：US20140004685A1
公开(公告)日：2014-01-02
申请号：US13917568
申请日：2013-06-13
申请人： Mohammad Kamruzzaman CHOWDHURY , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
发明人： Mohammad Kamruzzaman CHOWDHURY , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/78 , B23K26/36 , H01L21/67
CPC分类号： H01L21/67155 , B23K26/0624 , B23K26/0661 , B23K26/18 , B23K26/361 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/67069 , H01L21/67115 , H01L21/67207 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/68381
摘要： Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.
摘要翻译：激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜。形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。半导体晶片通过双面UV固化粘合剂膜耦合到载体基板。通过激光划线将掩模图案化以提供具有间隙的图案化掩模。图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对IC进行单片化。 UV固化粘合剂膜通过载体的UV照射部分固化。然后将分离的IC从仍然附着到载体基底上的部分固化的粘合剂膜分离，例如通过拾取和放置机单独分离。然后可以进一步固化可UV固化的粘合剂膜，以使膜完全从载体基材上除去。

100. 发明授权

US08598016B2 In-situ deposited mask layer for device singulation by laser scribing and plasma etch 有权
标题翻译：用于通过激光划线和等离子体蚀刻进行器件分割的原位沉积掩模层
公开(公告)号：US08598016B2
公开(公告)日：2013-12-03
申请号：US13160973
申请日：2011-06-15
申请人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
发明人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/30655 , H01L21/3086 , H01L21/67207
摘要： Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.
摘要翻译：通过激光划线和等离子体蚀刻来切割基板的方法。一种方法包括通过累积等离子体沉积聚合物的厚度来形成具有等离子体蚀刻室的原位掩模，以保护IC凸起表面免于随后的等离子体蚀刻。可以与等离子体沉积的聚合物一起使用第二掩模材料，例如水溶性掩模材料。用飞秒激光划线工艺对掩模的至少一部分进行图案化以提供具有沟槽的图案化掩模。在IC之间的衬底的图案化曝光区域中，其中衬底被等离子体蚀刻以分离IC和水溶性材料层被洗掉。

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