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    • 91. 发明授权
    • Device and method for testing paving materials
    • 铺路材料测试装置及方法
    • US07252012B2
    • 2007-08-07
    • US10524907
    • 2003-08-22
    • Sang-Soo Kim
    • Sang-Soo Kim
    • G01N3/00
    • G01N3/60G01N33/42
    • A device and method for directly measuring the critical temperatures for thermal cracking of asphalt binders. The exemplary comprises a metal ring, a strain gauge attached to the inner surface of the ring, an environmental chamber, one or more signal amplifiers, and a data acquisition system such as a laptop computer running suitable data analysis software. A thermocouple may also be attached to the inside of the tube to closely monitor the ring temperature. A mold that is also a component of the present invention is used to create a circular asphalt binder test specimen. When properly cast the specimen encircles the metal ring. The specimen and ring are placed within the environmental chamber for analysis. Development of thermal stress (induced by temperature reduction within the environmental chamber) within the asphalt binder test specimen is monitored by the strain gauge and the cracking temperature is directly determinable from the strain reading.
    • 一种直接测量沥青结合料热裂纹临界温度的装置和方法。 示例性的包括金属环,连接到环的内表面的应变计,环境室,一个或多个信号放大器以及数据采集系统,例如运行合适的数据分析软件的膝上型计算机。 也可以将热电偶连接到管的内部,以密切监测环的温度。 也可以使用也是本发明的成分的模具来制造圆形沥青粘结剂试样。 正确地铸造样品环绕金属环。 样品和环放置在环境室内进行分析。 通过应变仪监测沥青粘合剂试样中热应力(由环境室内的温度降低引起的)的发展,并且应变读数直接确定裂解温度。
    • 99. 发明申请
    • System for testing paving materials
    • 铺路材料测试系统
    • US20050178209A1
    • 2005-08-18
    • US11088438
    • 2005-03-24
    • Sang-Soo Kim
    • Sang-Soo Kim
    • C08L1/00G01N3/00G01N3/02G01N3/60G01N33/42
    • G01N3/60G01N33/42G01N2203/0057G01N2203/0282G01N2203/0298
    • A system for measuring the critical temperatures for thermal cracking of asphalt binders. The exemplary embodiment comprises a metal ring, at least one strain gauge attached to the inner surface of the ring, an environmental chamber, and a data acquisition system. A thermocouple may also be attached to the inside of the ring to monitor the ring temperature. A mold is provided for creating a circular asphalt binder test specimen. When properly cast, the specimen encircles the metal ring. The specimen and ring are placed within the environmental chamber for analysis as the temperature within the chamber is lowered. Thermal stress induced by temperature reduction within the asphalt binder test specimen is monitored by the strain gauge(s) and the cracking temperature is directly determined from the strain reading.
    • 一种测量沥青结合料热裂纹临界温度的系统。 示例性实施例包括金属环,附接到环的内表面的至少一个应变计,环境室和数据采集系统。 也可以将热电偶连接到环的内部以监测环的温度。 提供用于产生圆形沥青粘合剂试样的模具。 正确铸造时,样品环绕金属环。 当室内的温度降低时,样品和环被放置在环境室内用于分析。 通过应变计监测沥青粘合剂试样中由温度降低引起的热应力,并从应变读数直接确定裂解温度。
    • 100. 发明申请
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US20050173753A1
    • 2005-08-11
    • US11048845
    • 2005-02-03
    • Sang-Soo KimByung-Sun Kim
    • Sang-Soo KimByung-Sun Kim
    • H01L29/78H01L21/8239H01L21/8247H01L27/105H01L27/115H01L29/788
    • H01L27/11526H01L27/105H01L27/11546
    • A method of fabricating a semiconductor device having a non-volatile memory cell includes forming an insulation layer as an uppermost/outermost portion of the memory cell to enhance the charge retention capability of the memory cell. The insulation layer is formed after the gate structure and integrate dielectric of the non-volatile memory cell, and a gate of a logic transistor are formed. The insulation layer thus enhances the function of the intergate dielectric. Subsequently, a conductive layer is formed on the substrate including over the gate of the logic transistor. A silicide layer is then formed on the gate of the logic transistor and on the substrate adjacent opposite sides of the gate. The insulation layer thus also serves prevent the formation of a silicide layer on the non-volatile memory cell.
    • 制造具有非易失性存储单元的半导体器件的方法包括形成作为存储单元的最上部/最外部的绝缘层,以提高存储单元的电荷保持能力。 在栅极结构之后形成绝缘层并且整合非易失性存储单元的电介质,并且形成逻辑晶体管的栅极。 因此,绝缘层增强了隔间电介质的功能。 随后,在包括在逻辑晶体管的栅极上的衬底上形成导电层。 然后在逻辑晶体管的栅极上和邻近栅极的相对侧的衬底上形成硅化物层。 因此,绝缘层也用于防止在非易失性存储单元上形成硅化物层。