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91. 发明申请

US20120139069A1 STORAGE NODES, MAGNETIC MEMORY DEVICES, AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：存储编号，磁记录装置及其制造方法
公开(公告)号：US20120139069A1
公开(公告)日：2012-06-07
申请号：US13313361
申请日：2011-12-07
申请人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
发明人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
IPC分类号： H01L29/82 , H01L21/04
CPC分类号： H01L27/228 , G11C11/161 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
摘要翻译：磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。自由磁性层具有响应于自旋电流而可切换的磁化方向。自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。

92. 发明授权

US08089797B2 Information storage devices including vertical nano wires 失效
标题翻译：信息存储设备包括垂直纳米线
公开(公告)号：US08089797B2
公开(公告)日：2012-01-03
申请号：US12659515
申请日：2010-03-11
申请人： Ho-jung Kim , Jai-kwang Shin , Sun-ae Seo , Sung-chul Lee
发明人： Ho-jung Kim , Jai-kwang Shin , Sun-ae Seo , Sung-chul Lee
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.
摘要翻译：存储单元包括：存储单元阵列单元，具有垂直地布置在基板上的多个纳米线，所述多个纳米线中的每一个具有用于存储信息的多个域; 形成在所述基板上并被配置为选择所述多个纳米线中的至少一个的纳米线选择单元; 域移动控制单元，形成在所述基板上，并且被配置为控制相对于所述多个纳米线中的至少一个的域移动操作; 以及读/写控制单元，形成在所述基板上并被配置为控制关于所述多根纳米线中的至少一个的读取操作和写入操作中的至少一个。

93. 发明授权

US07999474B2 Flat lamp using plasma discharge 失效
标题翻译：平板灯使用等离子体放电
公开(公告)号：US07999474B2
公开(公告)日：2011-08-16
申请号：US12585972
申请日：2009-09-30
申请人： Young-dong Lee , Hidekazu Hatanaka , Seung-hyun Son , Jai-kwang Shin , Young-mo Kim
发明人： Young-dong Lee , Hidekazu Hatanaka , Seung-hyun Son , Jai-kwang Shin , Young-mo Kim
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , H01J11/12 , H01J11/28 , H01J11/38 , H01J61/54
摘要： A plasma-discharge light emitting device is provided. The plasma-discharge light emitting device may include: rear and front panels separated from each other in a predetermined interval, wherein at least one discharge cell may be provided between the rear and front panels, and wherein plasma discharge may be generated in the discharge cells; a pair of discharge electrodes provided on at least one of the rear and front panels for each of the discharge cells; a trench provided as a portion of each of the discharge cells between the pair of the discharge electrodes; and electron-emitting material layers provided on both sidewalls of the trench.
摘要翻译：提供了一种等离子体放电发光器件。等离子体放电发光器件可以包括：以预定间隔彼此分开的后面板和前面板，其中可以在后面板和前面板之间设置至少一个放电单元，并且其中可以在放电单元中产生等离子体放电 ; 一对放电电极，设置在每个放电单元的后面板和前面板中的至少一个上; 设置在所述一对放电电极之间的每个放电单元的一部分的沟槽; 以及设置在沟槽的两个侧壁上的电子发射材料层。

94. 发明申请

US20110122709A1 Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit 有权
标题翻译：非易失性逻辑电路，包括非易失性逻辑电路的集成电路和操作集成电路的方法
公开(公告)号：US20110122709A1
公开(公告)日：2011-05-26
申请号：US12801502
申请日：2010-06-11
申请人： Ho-jung Kim , Jai-kwang Shin , Kwang-seok Kim , Kee-won Kim
发明人： Ho-jung Kim , Jai-kwang Shin , Kwang-seok Kim , Kee-won Kim
IPC分类号： G11C7/10 , H03K19/173
CPC分类号： H03K19/1733 , G11C14/0054 , G11C14/0081 , G11C14/009 , H03K3/356008
摘要： A nonvolatile logic circuit includes a latch unit including a pair of first and second latch nodes; and a pair of first and second nonvolatile memory cells electrically connected to the first and second of latch nodes, respectively. A write operation is performed on the first and second nonvolatile memory cells according to a direction of a current flowing through the first and second nonvolatile memory cells when a write enable signal is activated. The direction of flow of current determined based on data on the respective first and second latch nodes, and a logic value written on the first nonvolatile memory cells is different from a logic value written on the second nonvolatile memory cell.
摘要翻译：非易失性逻辑电路包括：锁存单元，包括一对第一和第二锁存节点; 以及分别电连接到第一和第二锁存节点的一对第一和第二非易失性存储单元。当写入使能信号被激活时，根据流过第一和第二非易失性存储器单元的电流的方向在第一和第二非易失性存储器单元上执行写入操作。基于相应的第一和第二锁存节点上的数据确定的电流的流动方向和写在第一非易失性存储器单元上的逻辑值与写入第二非易失性存储单元的逻辑值不同。

95. 发明申请

US20110121409A1 Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor 有权
公开(公告)号：US20110121409A1
公开(公告)日：2011-05-26
申请号：US12923240
申请日：2010-09-10
申请人： David Seo , Jai-kwang Shin , Sun-ae Seo
发明人： David Seo , Jai-kwang Shin , Sun-ae Seo
IPC分类号： H01L29/78 , H01L21/314 , H01L21/336
CPC分类号： H01L21/3146 , H01L21/02115 , H01L21/02269 , H01L21/0237 , H01L21/02444 , H01L21/02527 , H01L21/0262 , H01L21/02631 , H01L29/1606 , H01L29/4908 , H01L29/66742 , H01L29/78603 , H01L29/78681 , H01L29/78684
摘要： Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

96. 发明申请

US20110063885A1 Information storage devices including vertical nano wires 失效
标题翻译：信息存储设备包括垂直纳米线
公开(公告)号：US20110063885A1
公开(公告)日：2011-03-17
申请号：US12659515
申请日：2010-03-11
申请人： Ho-jung Kim , Jai-kwang Shin , Sun-ae Seo , Sung-chul Lee
发明人： Ho-jung Kim , Jai-kwang Shin , Sun-ae Seo , Sung-chul Lee
IPC分类号： G11C19/00 , G11C7/00
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.
摘要翻译：存储单元包括：存储单元阵列单元，具有垂直地布置在基板上的多个纳米线，所述多个纳米线中的每一个具有用于存储信息的多个域; 形成在所述基板上并被配置为选择所述多个纳米线中的至少一个的纳米线选择单元; 域移动控制单元，形成在所述基板上，并且被配置为控制相对于所述多个纳米线中的至少一个的域移动操作; 以及读/写控制单元，形成在所述基板上并被配置为控制关于所述多根纳米线中的至少一个的读取操作和写入操作中的至少一个。

97. 发明申请

US20100149863A1 Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices 失效
标题翻译：磁迹，包括磁迹的信息存储设备，以及操作信息存储设备的方法
公开(公告)号：US20100149863A1
公开(公告)日：2010-06-17
申请号：US12461062
申请日：2009-07-30
申请人： Sung-chul Lee , Jai-kwang Shin , Sun-ae Seo , Young-jin Cho , Ung-hwan Pl , Ji-young Bae
发明人： Sung-chul Lee , Jai-kwang Shin , Sun-ae Seo , Young-jin Cho , Ung-hwan Pl , Ji-young Bae
IPC分类号： G11C11/14
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.
摘要翻译：磁道包括具有不同长度和不同磁畴壁移动速度的第一和第二磁畴区域。第一和第二磁畴区域中较长的区域用作信息读/写区域。信息存储装置包括磁道。磁道包括多个磁畴区域和形成在相邻磁畴区域之间的磁畴壁区域。多个磁畴区域包括第一磁畴区域和具有比第一磁畴区域更小的长度的至少一个第二磁畴区域。信息存储装置还包括被配置为在第一磁畴区域上执行信息记录操作和信息再现操作中的至少一个的第一单元和被配置为移动磁畴的磁畴壁的磁畴壁移动单元墙区域。

98. 发明授权

US07615928B2 Light emitting device using plasma discharge 失效
标题翻译：使用等离子体放电的发光器件
公开(公告)号：US07615928B2
公开(公告)日：2009-11-10
申请号：US11179727
申请日：2005-07-13
申请人： Young-dong Lee , Hidekazu Hatanaka , Seung-hyun Son , Jai-kwang Shin , Young-mo Kim
发明人： Young-dong Lee , Hidekazu Hatanaka , Seung-hyun Son , Jai-kwang Shin , Young-mo Kim
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , H01J11/12 , H01J11/28 , H01J11/38 , H01J61/54
摘要： A plasma-discharge light emitting device is provided. The plasma-discharge light emitting device may include: rear and front panels separated from each other in a predetermined interval, wherein at least one discharge cell may be provided between the rear and front panels, and wherein plasma discharge may be generated in the discharge cells; a pair of discharge electrodes provided on at least one of the rear and front panels for each of the discharge cells; a trench provided as a portion of each of the discharge cells between the pair of the discharge electrodes; and electron-emitting material layers provided on both sidewalls of the trench.
摘要翻译：提供了一种等离子体放电发光器件。等离子体放电发光器件可以包括：以预定间隔彼此分开的后面板和前面板，其中可以在后面板和前面板之间设置至少一个放电单元，并且其中可以在放电单元中产生等离子体放电 ; 一对放电电极，设置在每个放电单元的后面板和前面板中的至少一个上; 设置在所述一对放电电极之间的每个放电单元的一部分的沟槽; 以及设置在沟槽的两个侧壁上的电子发射材料层。

99. 发明授权

US07381292B2 Inductively coupled plasma generating apparatus incorporating serpentine coil antenna 失效
标题翻译：含有蛇形线圈天线的感应耦合等离子体发生装置
公开(公告)号：US07381292B2
公开(公告)日：2008-06-03
申请号：US10684522
申请日：2003-10-15
申请人： Young-dong Lee , Yuri Nikolaevich Tolmachev , Seong-gu Kim , Jai-kwang Shin
发明人： Young-dong Lee , Yuri Nikolaevich Tolmachev , Seong-gu Kim , Jai-kwang Shin
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled plasma (ICP) generating apparatus includes an evacuated reaction chamber, an antenna installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into the reaction chamber and generating plasma, and an radio frequency (RF) power source connected to the antenna to apply radio frequency power to the antenna, wherein the antenna has a plurality of coils having different radiuses, at least one of the coils being a serpentine coil bent in a zigzag pattern. Capacitors are connected between the RF power source and a matching network and between the matching network and the antenna, in parallel with the antenna, to induce a LC resonance phenomenon. With the ICP generating apparatus having the above structure, it is possible to reduce antenna inductance, suppress capacitive coupling, and improve plasma uniformity. It is also possible to discharge and sustain plasma efficiently using the LC resonance phenomenon.
摘要翻译：电感耦合等离子体（ICP）发生装置包括抽真空反应室，安装在反应室上部的天线，以诱导供给反应室的反应气体的电离电离并产生等离子体，以及射频）电源连接到所述天线以对所述天线施加射频功率，其中所述天线具有多个具有不同半径的线圈，所述线圈中的至少一个是以锯齿形图案弯曲的蛇形线圈。电容器连接在RF电源和匹配网络之间，并且与天线并联的匹配网络和天线之间，以引起LC共振现象。利用具有上述结构的ICP发生装置，可以减少天线电感，抑制电容耦合并提高等离子体均匀性。也可以使用LC共振现象有效地放电和维持等离子体。

100. 发明授权

US07208878B2 Method of manufacturing a rotation-magnetron-in-magnetron (RMIM) electrode 失效
标题翻译：制造旋转磁控管磁控管（RMIM）电极的方法
公开(公告)号：US07208878B2
公开(公告)日：2007-04-24
申请号：US11336880
申请日：2006-01-23
申请人： Jai-kwang Shin , Seong-gu Kim , Young-kyou Park , Hyeon-ill Um
发明人： Jai-kwang Shin , Seong-gu Kim , Young-kyou Park , Hyeon-ill Um
IPC分类号： H01J25/50
CPC分类号： H01J37/3408 , C23C14/35 , H01J9/236 , H01J23/10 , H01J37/3455
摘要： An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.
摘要翻译： RMIM电极，用于制造RMIM电极的方法和使用RMIM电极的溅射装置，其中RMIM电极包括磁体单元，该磁体单元包括位于磁体单元中心的圆柱形磁体和多个环形具有围绕圆柱形磁体的直径越来越大的磁体; 以及用于支撑和离轴旋转磁体单元的驱动单元，其中在磁体单元中，相邻的磁体具有相反的磁化方向。

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