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91. 发明授权

US08472138B2 Self-aligned full side shield PMR and method to make it 有权
标题翻译：自对准全侧盾PMR及其制作方法
公开(公告)号：US08472138B2
公开(公告)日：2013-06-25
申请号：US13135357
申请日：2011-07-01
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/112 , G11B5/3146 , G11B5/315 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T428/1193
摘要： A magnetic pole suitable for perpendicular magnetic recording is described. This write pole is symmetrically located relative to its side shields and has at least three additional surfaces that are disposed to lie in planes that are normal to the substrate's top surface.
摘要翻译：描述适用于垂直磁记录的磁极。该写入极相对于其侧屏对称地定位，并且具有至少三个额外的表面，其被设置为位于与基板顶表面垂直的平面中。

92. 发明授权

US08117738B2 Method to make a perpendicular magnetic recording head with a side write shield 有权
标题翻译：制作具有侧面写入屏蔽层的垂直磁记录头的方法
公开(公告)号：US08117738B2
公开(公告)日：2012-02-21
申请号：US12932552
申请日：2011-02-28
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Jiun-Ting Lee
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a self-aligned pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed from a shield layer by a RIE process characterized by a mask and gases producing a variety of etch rates. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that then separates the layer into two shields. The pole tip is then plated within the trench and an upper shield is formed above the side shields and pole.
摘要翻译：制造垂直磁记录（PMR）头，其具有由对准的一对侧屏蔽侧向屏蔽的自对准极尖，并由上屏蔽从上面屏蔽。侧屏蔽是通过RIE工艺由屏蔽层形成的，其特征在于产生各种蚀刻速率的掩模和气体。蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成楔形沟槽，然后将该层分成两个屏蔽层。然后将磁极尖端电镀在沟槽内，并且在侧屏蔽和极上方形成上屏蔽。

93. 发明申请

US20110262775A1 Self-aligned full side shield PMR and method to make it 有权
标题翻译：自对准全侧盾PMR及其制作方法
公开(公告)号：US20110262775A1
公开(公告)日：2011-10-27
申请号：US13135357
申请日：2011-07-01
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Chen-Jung Chien
IPC分类号： G11B5/33
CPC分类号： G11B5/1278 , G11B5/112 , G11B5/3146 , G11B5/315 , G11B5/3163 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T428/1193
摘要： A magnetic pole suitable for perpendicular magnetic recording is described. This write pole is symmetrically located relative to its side shields and has at least three additional surfaces that are disposed to lie in planes that are normal to the substrate's top surface.
摘要翻译：描述适用于垂直磁记录的磁极。该写入极相对于其侧屏对称地定位，并且具有至少三个额外的表面，其被设置为位于与基板顶表面垂直的平面中。

94. 发明授权

US07400475B2 Patterned, synthetic longitudinally exchange biased GMR sensor 失效
标题翻译：图案化，合成纵向交换偏置GMR传感器
公开(公告)号：US07400475B2
公开(公告)日：2008-07-15
申请号：US11036529
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

95. 发明授权

US07134186B2 Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor 失效
标题翻译：用于制造图案化合成的横向交换的偏置GMR传感器的方法
公开(公告)号：US07134186B2
公开(公告)日：2006-11-14
申请号：US11036922
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

96. 发明申请

US20110216447A1 Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer 有权
标题翻译：微波辅助磁记录（MAMR）作者八角极的过程
公开(公告)号：US20110216447A1
公开(公告)日：2011-09-08
申请号：US12660819
申请日：2010-03-03
申请人： Min Li , Cherng-Chyi Han , Kenichi Takano , Joe Smyth
发明人： Min Li , Cherng-Chyi Han , Kenichi Takano , Joe Smyth
IPC分类号： G11B5/33 , G03F7/20
CPC分类号： G11B5/314 , G11B5/1278 , G11B2005/0024
摘要： A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to
摘要翻译：公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。前缘和后缘由具有三个部分的两个侧壁连接。每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。一种形成写入器的方法从绝缘层中的梯形写入极开始。使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并且将极宽度窄化到<50nm而不破裂。最后，在STO上形成一个后挡板。

97. 发明申请

US20080297945A1 Method to make a perpendicular magnetic recording head with a bottom side shield 有权
标题翻译：制造具有底侧屏蔽的垂直磁记录头的方法
公开(公告)号：US20080297945A1
公开(公告)日：2008-12-04
申请号：US11809346
申请日：2007-05-31
申请人： Cherng-Chyi Han , Min Li , Fenglin Liu , Lijie Guan
发明人： Cherng-Chyi Han , Min Li , Fenglin Liu , Lijie Guan
IPC分类号： G11B5/127 , G11B5/147 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , G11B5/315 , Y10T29/49032 , Y10T29/49052
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of bottom side shields and shielded from above by an upper shield. The bottom side shields surround a lower portion of the pole tip while the upper portion of the pole tip is surrounded by non-magnetic layers. The bottom shields and the non-magnetic layer form wedge-shaped trench in which the pole tip is formed by a self-aligned plating process. The wedge shape is formed by a RIE process using specific gases applied through a masking layer formed of material that has a slower etch rate than the non-magnetic material or the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a non-magnetic layer of alumina that is formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. A write gap layer and an upper shield is then formed above the side shields and pole. The resulting structure substantially eliminates track overwrite while maintaining good track definition.
摘要翻译：垂直磁记录（PMR）头被制造成具有通过分离的一对底侧屏蔽横向屏蔽的极尖，并由上屏蔽从上面屏蔽。底侧屏蔽围绕极尖的下部，而极尖的上部被非磁性层包围。底部屏蔽层和非磁性层形成楔形沟槽，其中极尖通过自对准电镀工艺形成。楔形形状通过RIE工艺形成，其使用通过由比非磁性材料或屏蔽材料具有较慢蚀刻速率的材料形成的掩模层施加的特定气体。形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的形成在氧化铝的非磁性层上的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。然后在侧屏和极上方形成写间隙层和上屏蔽。所得到的结构基本上消除了轨道重写，同时保持良好的轨道定义。

98. 发明申请

US20050264954A1 Free layer for CPP GMR having iron rich NiFe 失效
标题翻译：自由层CPP GMR具有铁丰富的NiFe
公开(公告)号：US20050264954A1
公开(公告)日：2005-12-01
申请号：US10854651
申请日：2004-05-26
申请人： Min Li , Cheng Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Cheng Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33 , H01F10/32 , H01F41/30 , H01L43/08 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3929 , G11B2005/3996 , H01F10/3272 , H01F41/302 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译：通过使用包含含有65至72原子％铁的NiFe层的自由层，已经创建了改进的CPP GMR器件。所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。还描述了用于制造该装置的方法。

99. 发明授权

US06857180B2 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成纵向交换偏置GMR传感器的方法
公开(公告)号：US06857180B2
公开(公告)日：2005-02-22
申请号：US10104802
申请日：2002-03-22
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

100. 发明授权

US09034149B2 Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor 有权
标题翻译：用于制造用于磁阻传感器的高矫顽力硬偏置结构的方法
公开(公告)号：US09034149B2
公开(公告)日：2015-05-19
申请号：US12387377
申请日：2009-05-01
申请人： Min Zheng , Kunliang Zhang , Min Li
发明人： Min Zheng , Kunliang Zhang , Min Li
IPC分类号： C23C14/58 , C23C14/14 , C23C14/02 , G01R33/09 , G11B5/31 , G11B5/39
CPC分类号： C23C14/5833 , C23C14/025 , C23C14/14 , C23C14/5873 , G01R33/098 , G11B5/3163 , G11B5/3932
摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.
摘要翻译：公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其包括在蚀刻的种子层上的温和蚀刻的种子层和硬偏置（HB）层。 HB层可以包含堆叠在与蚀刻的种子层接触的下子层上的一个或多个HB子层。每个HB子层在其上沉积另一个HB子层之前被轻度蚀刻。蚀刻可以在IBD室中进行，并且在蚀刻表面上产生更高浓度的成核位点，从而促进比无蚀刻处理实现的更小的HB平均晶粒尺寸。较小的HB平均粒径负责将CoPt HB层中的Hcr增加到高达2500至3000 Oe。在不改变种子层或HB材料而不改变上述层的厚度的情况下实现更高的Hcr。

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