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    • 97. 发明申请
    • Stacked film patterning method and gate electrode forming method
    • 堆叠膜图案化方法和栅电极形成方法
    • US20070269938A1
    • 2007-11-22
    • US11803242
    • 2007-05-14
    • Kenichi Hayashi
    • Kenichi Hayashi
    • H01L21/84H01L21/00
    • H01L29/66757H01L29/4908
    • A stacked film patterning method is provided which is capable of reliably removing residual substances remaining after etching of a metal film, improving etching uniformity of a silicon film, and preventing an occurrence of etching residues. A micro-crystal film and a chromium film are sequentially formed on an insulating film serving as a front-end film and the chromium film is etched to be patterned by using a resist as a mask. Next, a micro-crystal silicon film on which the residual substances exist is exposed to plasma of a mixed gas including chlorine gas and oxygen gas to selectively etch the residual substances on a surface of the micro-crystal silicon film. After that, the micro-crystal silicon film is dry etched.
    • 提供一种层叠膜图案化方法,其能够可靠地除去金属膜蚀刻后剩余的残留物质,提高硅膜的蚀刻均匀性,防止蚀刻残留物的发生。 在用作前端膜的绝缘膜上依次形成微晶膜和铬膜,并通过使用抗蚀剂作为掩模来蚀刻铬膜以进行图案化。 接下来,将残留物质存在的微晶硅膜暴露于包含氯气和氧气的混合气体的等离子体中,以选择性地蚀刻微晶硅膜表面上的残留物质。 之后,干法蚀刻微晶硅膜。
    • 100. 发明申请
    • Reproduction device and method, recording medium, and program
    • 再现装置和方法,记录介质和程序
    • US20070103805A1
    • 2007-05-10
    • US10579541
    • 2004-11-10
    • Kenichi HayashiMasaki EndoTomohiro Ohama
    • Kenichi HayashiMasaki EndoTomohiro Ohama
    • G11B20/10
    • G11B20/10009G11B20/10037G11B20/10222G11B20/10425G11B20/1403G11B2020/1476
    • The present invention relates to a reproducing apparatus which, in a case where a burst error has occurred, corrects an error preceding a synchronization pattern detected thereafter to have less errors. A bit slip judging section 81 in a bit slip correcting section 53 calculates a bit slip correction amount and a bit slip correction position on the basis of phase error signals detected by a phase error detecting section 51, synchronization pattern signals detected by a synchronization detecting section 52, reproduced clocks and detected data. A FIFO control section 82 controls a FIFO buffer 83 on the basis of the bit slip correction amount and the bit slip correction position, to perform bit slip correction. As a result, in the case where a burst error has occurred, an error preceding a synchronization pattern detected thereafter is corrected, whereby an error reduction can be implemented. The present invention is applicable to a reproducing apparatus.
    • 本发明涉及在发生突发错误的情况下,对其后检测到的同步模式之前的错误进行校正以具有更少错误的再现装置。 位移校正部分53中的位滑动判断部分81基于由相位误差检测部分51检测的相位误差信号计算位滑差校正量和位滑差校正位置,同步检测部分检测到的同步模式信号 52,再现时钟和检测数据。 FIFO控制部分82基于位滑差校正量和位滑差校正位置控制FIFO缓冲器83,以进行位滑动校正。 结果,在发生突发错误的情况下,纠正了之后检测到的同步模式之前的错误,从而可以实现错误减少。 本发明可应用于再现装置。