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91. 发明申请

US20080182382A1 METHODS OF THIN FILM PROCESS 有权
标题翻译：薄膜工艺方法
公开(公告)号：US20080182382A1
公开(公告)日：2008-07-31
申请号：US11947674
申请日：2007-11-29
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/762
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

92. 发明申请

US20080018649A1 METHODS AND APPARATUSES FOR UTILIZING AN APPLICATION ON A REMOTE DEVICE 审中-公开
标题翻译：在远程设备上应用应用的方法和设备
公开(公告)号：US20080018649A1
公开(公告)日：2008-01-24
申请号：US11753821
申请日：2007-05-25
申请人： Zheng Yuan , Matthew Sheppard
发明人： Zheng Yuan , Matthew Sheppard
IPC分类号： G06T11/20
CPC分类号： H04L67/025 , H04L63/102
摘要： In one embodiment, the methods and apparatuses display a list representing a plurality of applications; view a status of each of the plurality of applications; view a target application as an available application from the plurality of applications; and remotely access the target application on a local device.
摘要翻译：在一个实施例中，方法和装置显示表示多个应用的列表; 查看所述多个应用中的每一个的状态; 从多个应用程序中将目标应用程序视为可用应用程序; 并远程访问本地设备上的目标应用程序。

93. 发明申请

US20050196929A1 Low-thermal-budget gapfill process 有权
标题翻译：低热量预算的填隙过程
公开(公告)号：US20050196929A1
公开(公告)日：2005-09-08
申请号：US10793559
申请日：2004-03-04
申请人： Zheng Yuan , Reza Arghavani , Ellie Yieh , Shankar Venkataraman
发明人： Zheng Yuan , Reza Arghavani , Ellie Yieh , Shankar Venkataraman
IPC分类号： H01L21/336
CPC分类号： H01L21/76224 , C23C16/403 , C23C16/45536 , C23C16/45544 , H01J37/32009 , H01L21/02178 , H01L21/0228 , H01L21/32055 , H01L21/67017 , H01L21/6719 , H01L21/763
摘要： A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700° C.
摘要翻译：提供了一种低热预算的间隙填充方法，用于填充在应变硅衬底上形成的两个相邻凸起特征之间的间隙，作为浅沟槽隔离工艺的一部分。使用原子层沉积沉积电绝缘衬垫，并且将多晶硅沉积在电绝缘衬垫上，其中两个阶段在低于700℃的温度下进行。

94. 发明申请

US20050136684A1 Gap-fill techniques 审中-公开
标题翻译：间隙填充技术
公开(公告)号：US20050136684A1
公开(公告)日：2005-06-23
申请号：US10746695
申请日：2003-12-23
申请人： Kevin Mukai , Kimberly Branshaw , Zheng Yuan , Xinyun Xia , Xiaolin Chen , Dongqing Li , M. Karim , Van Ton , Cary Ching , Steve Ghanayeim , Nitin Ingle
发明人： Kevin Mukai , Kimberly Branshaw , Zheng Yuan , Xinyun Xia , Xiaolin Chen , Dongqing Li , M. Karim , Van Ton , Cary Ching , Steve Ghanayeim , Nitin Ingle
IPC分类号： C23C16/04 , C23C16/40 , C23C16/505 , H01L21/316 , H01L21/762 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76224 , H01L21/76828 , H01L21/76832 , H01L21/76837
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.
摘要翻译：可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层，。在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

95. 发明授权

US06905940B2 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US06905940B2
公开(公告)日：2005-06-14
申请号：US10247672
申请日：2002-09-19
申请人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/762
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

96. 发明授权

US06763501B1 Remote document serving 有权
标题翻译：远程文件服务
公开(公告)号：US06763501B1
公开(公告)日：2004-07-13
申请号：US09591377
申请日：2000-06-09
申请人： Min Zhu , Guanghong Yang , Zheng Yuan , Song Xiang Wei
发明人： Min Zhu , Guanghong Yang , Zheng Yuan , Song Xiang Wei
IPC分类号： G06F1700
CPC分类号： G06F17/30011 , Y10S707/99952
摘要： An apparatus, method, and computer program product for instant remote document serving. In one implementation, referred to as “remote document serving,” a remote file is converted to a “served document” which is distributed to a member of a data conference for review. In another implementation, referred to as “remote application serving,” the “owner” of a remote document views the screens created by a remote application associated with the document. The owner can view the screens and interact with the remote application.
摘要翻译：一种用于即时远程文档服务的设备，方法和计算机程序产品。在一个被称为“远程文档服务”的实现中，远程文件被转换为“被送达的文件”，该文件被分发给数据会议的成员进行审查。在另一个称为“远程应用程序服务”的实现中，远程文档的“所有者”会查看与文档关联的远程应用程序创建的屏幕。所有者可以查看屏幕并与远程应用程序进行交互。

97. 发明授权

US06691154B1 Instantaneous remote control of an unattended server 有权
标题翻译：无人值守服务器的瞬时遥控
公开(公告)号：US06691154B1
公开(公告)日：2004-02-10
申请号：US09515684
申请日：2000-02-29
申请人： Min Zhu , Zheng Yuan
发明人： Min Zhu , Zheng Yuan
IPC分类号： G06F1516
CPC分类号： G06Q10/10
摘要： A method and a computer program product, implementing techniques for exchanging data in an unattended desktop sharing mode. The techniques include receiving a conferencing request, at a local unattended server, from a remote conferencing server; loading a desktop application on the local unattended server in response to the conferencing request to generate a loaded desktop; sending the loaded desktop to a virtual device to create a shared desktop; and sending the shared desktop to the remote conferencing server for distribution to one or more remote computers, whereby the shared desktop is displayed at each remote computer by a viewer application.
摘要翻译：一种方法和计算机程序产品，实现了在无人参与的桌面共享模式下交换数据的技术。这些技术包括从远程会议服务器在本地无人值守服务器处接收会议请求; 在本地无人值守服务器上加载桌面应用程序以响应会议请求来生成加载的桌面; 将加载的桌面发送到虚拟设备以创建共享桌面; 以及将共享桌面发送到远程会议服务器以分发给一个或多个远程计算机，由此共享桌面由观看者应用程序显示在每个远程计算机上。

98. 发明授权

US06664907B1 Information handling system with self-calibrating digital-to-analog converter 有权
标题翻译：具有自校准数字 - 模拟转换器的信息处理系统
公开(公告)号：US06664907B1
公开(公告)日：2003-12-16
申请号：US10172641
申请日：2002-06-14
申请人： Lawrence E. Knepper , Zheng Yuan
发明人： Lawrence E. Knepper , Zheng Yuan
IPC分类号： H03M110
CPC分类号： H04N9/64
摘要： A self-calibrating video circuit comprises a first and second digital-to-analog converter generating first and second output signals, and a calibration circuit coupled with the first and second digital-to-analog converters for calibrating the first digital-to-analog converter output signal to the output signal of the second digital-to-analog converter.
摘要翻译：自校准视频电路包括产生第一和第二输出信号的第一和第二数模转换器，以及与第一和第二数模转换器耦合的校准电路，用于校准第一数模转换器输出到第二数模转换器的输出信号。

99. 发明授权

US06624091B2 Methods of forming gap fill and layers formed thereby 失效
公开(公告)号：US06624091B2
公开(公告)日：2003-09-23
申请号：US09851201
申请日：2001-05-07
申请人： Zheng Yuan
发明人： Zheng Yuan
IPC分类号： H01L2131
CPC分类号： C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02271 , H01L21/31612 , H01L21/76819
摘要： A method of forming a fill layer over a layer in a semiconductor stack having gaps of high aspect ratio topography, and products produced thereby.

100. 发明授权

US06544345B1 Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries 失效
标题翻译：使用组合化学物质对半导体制造设备进行原位清洗的方法和系统
公开(公告)号：US06544345B1
公开(公告)日：2003-04-08
申请号：US09615035
申请日：2000-07-12
申请人： Bruce E. Mayer , Robert H. Chatham, III , Nitin K. Ingle , Zheng Yuan
发明人： Bruce E. Mayer , Robert H. Chatham, III , Nitin K. Ingle , Zheng Yuan
IPC分类号： B08B704
CPC分类号： B08B7/0035 , C23C16/4405 , Y10S438/905
摘要： An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.
摘要翻译：提供了现场，两步或组合，半导体制造设备的清洁方法和系统。本发明在每个步骤中使用两个单独的基于氟的化学物质，其选择性地靶向在设备表面上积累的不同类型的沉积物的去除。特别地，粉末和致密的膜状固体沉积物以及两者的组合积聚在室表面和相关的设备部件上。这两种沉积物通过本发明有选择地被去除。组合清洁步骤的这种选择性靶向产生改进的清洁技术。在另一个实施方案中，本发明的方法和系统提供了使用具有不同化学物质的分离步骤清洁腔室和相关设备，然后以各种期望的顺序执行这些步骤。

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