专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明专利

JPS60135574A PLANAR MAGNETRON SPUTTERING METHOD 失效
公开(公告)号：JPS60135574A
公开(公告)日：1985-07-18
申请号：JP24384483
申请日：1983-12-26
申请人： HITACHI LTD
发明人： SAKATA MASAO , KOBAYASHI HIDE , KASAHARA OSAMU , OOGISHI HIDEJI , ABE KATSUO
IPC分类号： C23C14/36 , C23C14/35 , H01J37/34
摘要： PURPOSE:To reduce the number of foreign matter sticking on a substrate by making the direction of an electric field and that of a magnetic field parallel to each other on the boundary between plural target members to inhibit abnormal electric discharge on the boundary. CONSTITUTION:Plural target members 801-803 are arranged on an electrode 102. At least one of the members is made of a material different from the material of other members. The direction of an electric field and that of a magnetic field are made almost parallel to each other on each boundary between the members, and the principal faces of the members 801-803 are sputtered. By this method the number of foreign matter sticking on a substrate 110 is reduced.

92. 发明专利

JPS60135572A SPUTTERING METHOD 失效
公开(公告)号：JPS60135572A
公开(公告)日：1985-07-18
申请号：JP24384383
申请日：1983-12-26
申请人： HITACHI LTD
发明人： ABE KATSUO , KOBAYASHI HIDE , SAKATA MASAO , KASAHARA OSAMU , OOGISHI HIDEJI
IPC分类号： C23C14/34 , H01J37/34
摘要： PURPOSE:To enable high power sputtering and to increase the rate of film formation by bringing a target for sputtering into contact with a cooling member at a large number of points to improve the heat conductivity. CONSTITUTION:The back side 303 of a target 301 for sputtering is made finely uneven, or a backing plate 103 as a cooling member is made finely uneven. The target 301 is then brought into contact with the plate 103 at a large number of points over the whole contact surface to maintain well the heat and electric conductivities. High power sputtering can be carried out, and a film is formed at a high rate.

93. 发明专利

JPS60120515A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS60120515A
公开(公告)日：1985-06-28
申请号：JP22841983
申请日：1983-12-05
申请人： HITACHI LTD
发明人： KASAHARA OSAMU
IPC分类号： H01L21/205 , H01L21/285 , H01L21/31
摘要： PURPOSE:To reduce film defects due to generation or adhesion to a substrate of foreign matters by forming a film made of metal or an insulating material on an exposed surface inside the thin film forming device of a shield plate, a substrate holding member and etc. in said device by plasma spray coating. CONSTITUTION:The surface exposed in a spattering chamber 2 is subjected to plasma spray coating with Mo to form a plasma spray coating film 15 of Mo. A substrate 11 is supported by a substrate holder 12 with facing a target 7 through a window 4a of a shield plate 4. Meanwhile, plasma is generated by a spattering electrode 5 and an anode 6 and excited ions are bombarded to a target 7. Consequently, particles of Mo and Si fly in the spattering chamber 2 and adhere to and deposit on a surface of the substrate 11 when a shutter 10 opens so as to form a thin film of MoSi2. At this time, the particles of Mo and Si adhere to the shield plate 4, the anode 6, the shutter 10, the substrate holder 12 and an inside surface of the chamber 1 for forming the film and because the plasma spray coating film 15 of Mo is formed over the surfaces of these members, the adhering films 16 are not exfoliated easily.

94. 发明专利

JPS5915492B2 JPS5915492B2 - 失效
标题翻译：空值
公开(公告)号：JPS5915492B2
公开(公告)日：1984-04-10
申请号：JP6383382
申请日：1982-04-19
申请人： Hitachi Ltd
发明人： KASAHARA OSAMU , NARAOKA KYOTAKE
IPC分类号： H01L21/60 , H01L21/3205 , H01L23/52
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/48 , H01L2224/48463 , H01L2224/4847 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01078 , H01L2924/10253 , H01L2924/00014 , H01L2924/00012

95. 发明专利

JPS5817637A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5817637A
公开(公告)日：1983-02-01
申请号：JP11509381
申请日：1981-07-24
申请人： HITACHI LTD
发明人： FUJITA MINORU , KASAHARA OSAMU
IPC分类号： H01L29/78 , H01L21/768 , H01L23/522 , H01L23/532 , H01L27/00
摘要： PURPOSE:To obtain a semiconductor device having an interlayer insulating film which does not affect static influence and which does not thermally deform a wire by forming an insulating film which does not electrostatically affect the wire of lower layer in a VLST integrated with insulated gate type field effect transistor, and further forming an insulating film for producing compression force on the film. CONSTITUTION:An interlayer insulating film 25 formed between an aluminum wire (e.g., 14) connected to a gate electrode (e.g., G1 and a wire 5) and an aluminum wire (e.g., 15) for supplying an input signal is formed of 2-layer structure of an SOG film 26 of lower layer and a P-SixOy film 27 of upper layer. An SOG film does not charge static electricity at the forming time, and does not statically affect the influence of polysilicon wires 5 and 6 (gate electrodes G1). Further, an SiOy film 27 formed by plasma precipitation technique on the film 26 is an elaborately fabricated film, thereby preventing the occurrence of defect such as the deformation of the wire.

96. 发明专利

JPS57194549A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57194549A
公开(公告)日：1982-11-30
申请号：JP7921181
申请日：1981-05-27
申请人： HITACHI LTD
发明人： MIYAZAWA HIROYUKI , KASAHARA OSAMU , SHIMIZU SHINJI
IPC分类号： H01L27/10 , H01L21/3205 , H01L21/8242 , H01L23/52 , H01L27/108 , H01L29/78
摘要： PURPOSE:To prevent the formation of the SiO2 film for the titled device by a method wherein, when forming the gate electrode wiring of the semiconductor device consisting of the lamination of a polycrystalline Si film and an Mo film, a high melting point metal such as Ti and the like, having a higher reducibility than Si, is mixed in the Mo film, and oxygen is trapped when a heat treatment is performed. CONSTITUTION:After a field oxide film 7 and a gate oxide film 9 have been formed on an Si substrate 5, a polycrystalline Si films 11A and 12B, and Ti containing Mo films 12a and 12b are formed, and a patterning is performed. Subsequently, impurity diffusion regions 18 and 19 are formed by performing an ion implantation, a PSG film 22 is coated on the above, and then the drive-in and the like for the diffusion regions 18 and 19 are performed by heat treatments. When performing these heat treatments, the oxygen in the electrode wiring is trapped by combining with the Ti and the formation of the SiO2 film between the polycrystalline Si film and the Mo film is checked, thereby enabling to prevent the increase of the contact resistance between these two layers.

97. 发明专利

JPS55150247A PARALLEL GAP ELECTRODE AND PROCESS FOR WELDING USING THE SAME 失效
公开(公告)号：JPS55150247A
公开(公告)日：1980-11-22
申请号：JP5712379
申请日：1979-05-11
申请人： HITACHI LTD
发明人： OOKUBO TADASHI , KASAHARA OSAMU , KUNISHI TAKAFUMI , SUGAWA TAKU
IPC分类号： B23K3/04 , B23K3/03 , H01L21/60
摘要： PURPOSE:To improve the workability for welding a small-sized article by forming a parallel gap electrode used for bonding a metallic wire of conical electrodes integrated in insulation with a basic cylinder. CONSTITUTION:A basic cylinder 8 becoming a holder having a feeding hole 9 for passing a bonding wire is made of hard insulating material or metallic material, and a conical parallel gap electrode 10 becoming a capillary mounted integrally with the lower portion of the cylinder 8 is made of metallic material such as Mo or the like. In this configuration the electrode 10 is made of two portions 10a, 10b, a tapered hole 13 for receiving a wire ball is formed at the end thereof, the insulating material 12 such as ethylene tetrafluoride or glass is coated on the seam between the portions 10a and 10b and the tapered inner surface. Thus, an electric current is flowed between the positions 10a and 10b to create a ball in the hole 13, molten solder is urged to the substrate to weld it without directivity.

98. 发明专利

JPS5138661A 失效
公开(公告)号：JPS5138661A
公开(公告)日：1976-03-31
申请号：JP11143774
申请日：1974-09-30
申请人： HITACHI LTD
发明人： KACHI TADAO , KASAHARA OSAMU
IPC分类号： H05K3/46 , H01L21/306 , H01L21/3205 , H05K3/10

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式