会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 91. 发明专利
    • HIGH FREQUENCY SEMICONDUCTOR ELEMENT
    • JP2001035948A
    • 2001-02-09
    • JP20867099
    • 1999-07-23
    • HITACHI LTD
    • SAITO RYUICHIKONDO YASUOAONO YASUHISA
    • H01L23/02
    • PROBLEM TO BE SOLVED: To enhance heat dissipation performance, matching of the coefficient of thermal expansion with a semiconductor chip, easiness of machining and light weight performance by composing a base substrate of composite material having a specified coefficient of thermal expansion, thermal conductivity of specified level or above, and Vickers hardness of a specified level or below. SOLUTION: A base substrate 102 is composed of composite materials of Cu and Cu20 having a coefficient of thermal expansion of 15×10-6/ deg.C, and thermal conductivity of 130 W/mk. A brazing material 113, e.g. solder, is applied onto the base substrate 102 and the electrode on the surface of a high frequency semiconductor chip 101 is connected with a terminal 104 through a wire 103. The terminal 104 is sealed of an insulating material 105, e.g. ceramics or glass, using brazing materials 110, 111. Furthermore, a frame 106 is jointed to a sealing material 107 through a brazing material 112 and then the sealing material 107 is welded to a cover 108 thus completing the high frequency semiconductor chip.