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    • 93. 发明授权
    • Organic thin-film transistors
    • 有机薄膜晶体管
    • US07425723B2
    • 2008-09-16
    • US11314687
    • 2005-12-21
    • Beng S. OngYuning LiYiliang WuPing Liu
    • Beng S. OngYuning LiYiliang WuPing Liu
    • H01L29/08H01L35/24H01L51/00
    • H01L51/0035C08G61/12C08G73/026H01L51/0541H01L51/0545Y10T428/31504
    • An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure: wherein R1 through R5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization; and wherein the polyarylamine has a mobility (μ0) of 10−4 cm2/V·sec or greater.
    • 有机薄膜晶体管具有p型半导体层,其中半导体层包含化学结构的结晶共轭多芳基胺:其中R 1至R 5独立地为 选自氢,具有约1至约30个碳原子的烷基,具有约6至约40个碳原子的芳基,具有约3至约40个原子的杂芳基,具有约1至约30个碳原子的烷氧基,具有约1至约30个碳原子的烷氧基, 约6至约40个碳原子,及其取代衍生物; 其中A和B相同或不同,独立地选自具有约6至约20个碳原子的亚芳基或具有约3至约20个碳原子的杂芳基; 并且其中n是聚合度; 并且其中所述聚芳基胺具有10 -4平方厘米/秒/秒或更大的迁移率(μ-O)。
    • 97. 发明授权
    • Device with small molecular thiophene compound
    • 具有小分子噻吩化合物的装置
    • US07312469B2
    • 2007-12-25
    • US10865445
    • 2004-06-10
    • Beng S. OngPing LiuMaria BirauYiliang Wu
    • Beng S. OngPing LiuMaria BirauYiliang Wu
    • H01L35/24
    • H01L51/0036H01L51/0052H01L51/0068H01L51/0541H01L51/0545Y10T428/31504
    • An electronic device comprising a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes a small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit.
    • 一种电子器件,包括与多个电极接触的半导体层,其中所述半导体层包括由多个噻吩单元组成的小分子噻吩化合物,每个噻吩单元由结构(A)表示,其中每个噻吩单元以 第二环位置和第五环位置中的任一个或两个,其中存在至少一个噻吩单元,其中R 1存在于第三环位置或第四环位置处,或者在第三环位置处 环位置和第四环位置,其中对于任何两个相邻的噻吩单元,排除了在一个噻吩单元的3位和3'位上同时存在相同或不同的R 1' 其他噻吩单元的位置。