专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20120217639A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20120217639A1
公开(公告)日：2012-08-30
申请号：US13499652
申请日：2010-09-02
申请人： Masahiro Sugimoto , Akinori Seki , Akira Kawahashi , Yasuo Takahashi , Masakatsu Maeda
发明人： Masahiro Sugimoto , Akinori Seki , Akira Kawahashi , Yasuo Takahashi , Masakatsu Maeda
IPC分类号： H01L23/482 , H01L21/74
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.
摘要翻译：提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。

92. 发明授权

US08188514B2 Transistor 有权
标题翻译：晶体管
公开(公告)号：US08188514B2
公开(公告)日：2012-05-29
申请号：US12540230
申请日：2009-08-12
申请人： Masahiro Sugimoto , Tat-Sing Paul Chow , Zhongda Li , Tetsu Kachi , Tsutomu Uesugi
发明人： Masahiro Sugimoto , Tat-Sing Paul Chow , Zhongda Li , Tetsu Kachi , Tsutomu Uesugi
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/0642 , H01L29/1033 , H01L29/2003 , H01L29/4232 , H01L29/42368 , H01L29/66462 , H01L29/7788
摘要： An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.
摘要翻译：公开了一种HEMT型晶体管，其是常闭型，栅极阈值电压的变化小。晶体管设置有p型区域，势垒区域，绝缘膜，栅极电极。沟道区域连接到p型区域的上表面。通道区域是n型或i型，并且设置有第一通道区域和第二通道区域。阻挡区域与第一通道区域的上表面形成异质结。绝缘膜连接到第二通道区域的上表面和阻挡区域的上表面。栅电极经由绝缘膜面向第二沟道区和阻挡区。第一通道区域和第二通道区域在电流通路中串联布置。

93. 发明申请

US20120012860A1 SIC SEMICONDUCTOR DEVICE 有权
标题翻译： SIC半导体器件
公开(公告)号：US20120012860A1
公开(公告)日：2012-01-19
申请号：US13177747
申请日：2011-07-07
申请人： Shinichiro MIYAHARA , Hidefumi Takaya , Masahiro Sugimoto , Jun Morimoto , Yukihiko Watanabe
发明人： Shinichiro MIYAHARA , Hidefumi Takaya , Masahiro Sugimoto , Jun Morimoto , Yukihiko Watanabe
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7397 , H01L29/7828
摘要： A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.
摘要翻译： SiC半导体器件包括：反向型MOSFET，具有：衬底; 衬底上的漂移层和基极区域; 基极接触层和基极区上的源极区; 多个沟槽具有沿着第一方向的纵向方向穿过源极区域和基极区域; 通过栅极绝缘膜在每个沟槽中的栅电极; 覆盖所述栅电极且具有接触孔的层间绝缘膜，所述源极区域和所述基极接触层暴露在所述接触孔中; 源极通过接触孔与源极区域和基极区域耦合; 衬底上的漏电极。源区域和基底接触层与垂直于第一方向的第二方向一起延伸，并且与第一方向交替布置。接触孔沿第一方向具有纵向方向。

94. 发明申请

US20110279541A1 RECORDING APPARATUS 有权
标题翻译：录音设备
公开(公告)号：US20110279541A1
公开(公告)日：2011-11-17
申请号：US12965102
申请日：2010-12-10
申请人： Akira Kida , Masahiro Sugimoto , Masaharu Ueda
发明人： Akira Kida , Masahiro Sugimoto , Masaharu Ueda
IPC分类号： B41J23/00
CPC分类号： B41J2/515 , B41J11/0025 , B41J25/34
摘要： A holder that holds a line recording head is displaced in a sheet width direction against the urging force of an elastic portion to bring an abutment portion of the holder into contact with one of a plurality of positioning surfaces provided at a reference portion of a sheet conveying mechanism. The holder is positioned and fixed to the reference portion, with the urging force exerted thereto.
摘要翻译：保持行记录头的保持器抵抗弹性部分的推动力沿纸张宽度方向移位，使保持件的抵接部分与设置在纸张传送的参考部分的多个定位表面中的一个相接触机制。保持器定位并固定到参考部分上，并施加施力。

95. 发明申请

US20110279525A1 RECORDING APPARATUS 审中-公开
标题翻译：录音设备
公开(公告)号：US20110279525A1
公开(公告)日：2011-11-17
申请号：US12963230
申请日：2010-12-08
申请人： Seiji Suzuki , Yuji Kanome , Hiroyuki Tanaka , Yoshiaki Suzuki , Masahiro Sugimoto , Susumu Hirosawa , Takeaki Nakano
发明人： Seiji Suzuki , Yuji Kanome , Hiroyuki Tanaka , Yoshiaki Suzuki , Masahiro Sugimoto , Susumu Hirosawa , Takeaki Nakano
IPC分类号： B41J2/165
CPC分类号： B41J2/16585
摘要： An apparatus includes a recording head having nozzle chips arranged in a staggered configuration along a second direction that intersects a first direction in which a sheet is conveyed, a first suction portion corresponding to a first row of nozzle chips in the staggered configuration, and a second suction portion corresponding to a second row of nozzle chips. The first suction portion and the second suction port are in a positional relationship in which they are displaced in the second direction so as to correspond to displacement between a first nozzle chip in the first row and its neighboring second nozzle chip in the second row in the second direction. The apparatus further includes a positioning member having a plurality of reference surfaces for use in positioning the recording head at different locations in a third direction that intersects the first direction and the second direction.
摘要翻译：一种装置包括具有喷嘴芯片的记录头，沿着第二方向布置成交错布置的喷嘴芯片，该第二方向与其中输送片材的第一方向相交，与交错构造中的第一排喷嘴芯片对应的第一吸入部分，抽吸部分对应于第二排喷嘴芯片。第一吸入部和第二吸入口处于位置关系，它们在第二方向上位移，以对应于第一排中的第一喷嘴芯片和第二排中的相邻的第二喷嘴芯片之间的位移第二个方向该装置还包括定位构件，该定位构件具有多个参考表面，用于将记录头定位在与第一方向和第二方向相交的第三方向上的不同位置处。

96. 发明申请

US20110115846A1 RECORDING APPARATUS 有权
标题翻译：录音设备
公开(公告)号：US20110115846A1
公开(公告)日：2011-05-19
申请号：US12946733
申请日：2010-11-15
申请人： Seiji Suzuki , Yuji Kanome , Hiroyuki Tanaka , Yoshiaki Suzuki , Masahiro Sugimoto , Susumu Hirosawa , Takeaki Nakano
发明人： Seiji Suzuki , Yuji Kanome , Hiroyuki Tanaka , Yoshiaki Suzuki , Masahiro Sugimoto , Susumu Hirosawa , Takeaki Nakano
IPC分类号： B41J2/165
CPC分类号： B41J2/16532 , B41J2/16541 , B41J2/16544 , B41J2/16547 , B41J2/16585
摘要： An apparatus includes a recording head arranged so as to oppose a sheet moving in a first direction, in which a plurality of first nozzle chips and a plurality of second nozzle chips each having a nozzle array are arranged as different arrays in a second direction crossing the first direction, and in which the first nozzle chips and the second nozzle chips adjacent to each other are shifted from each other in the second direction, a first suction unit opposed to the first nozzle chips and configured to suction ink from a part of the nozzle arrays included in the first nozzle chips, a second suction unit opposed to the second nozzle chips and configured to suction ink from a part of the nozzle arrays included in the second nozzle chips, a suction holder configured to retain the first suction unit and the second suction unit, and a movement mechanism configured to cause relative movement between the recording head and the suction holder in the second direction, wherein the first suction unit and the second suction unit are shifted from each other in the second direction in correspondence with the shift between the first nozzle chips and the second nozzle chips.
摘要翻译：一种设备包括：记录头，其布置成与沿第一方向移动的片材相对，其中多个第一喷嘴芯片和多个具有喷嘴阵列的第二喷嘴芯片沿与第二方向交叉的第二方向排列成不同的阵列第一方向，并且其中彼此相邻的第一喷嘴芯片和第二喷嘴芯片沿第二方向彼此偏移;第一抽吸单元，与第一喷嘴芯片相对并且构造成从喷嘴的一部分吸取墨水包括在第一喷嘴芯片中的阵列，与第二喷嘴芯片相对并且被配置为从包括在第二喷嘴芯片中的喷嘴阵列的一部分吸入墨水的第二抽吸单元，构造成保持第一抽吸单元和第二抽吸单元抽吸单元和移动机构，其构造成在第二方向上在记录头和吸持保持器之间产生相对运动，其中第一抽吸单元和第二抽吸单元相对于第一喷嘴芯片和第二喷嘴芯片之间的移动在第二方向上彼此偏移。

97. 发明申请

US20110109690A1 RECORDING APPARATUS 有权
标题翻译：录音设备
公开(公告)号：US20110109690A1
公开(公告)日：2011-05-12
申请号：US12896721
申请日：2010-10-01
申请人： Akira Kida , Masahiro Sugimoto , Yuji Kanome , Hiroyuki Tanaka , Yoshiaki Suzuki , Seiji Suzuki , Takeaki Nakano , Susumu Hirosawa
发明人： Akira Kida , Masahiro Sugimoto , Yuji Kanome , Hiroyuki Tanaka , Yoshiaki Suzuki , Seiji Suzuki , Takeaki Nakano , Susumu Hirosawa
IPC分类号： B41J2/165
CPC分类号： B41J2/16552 , B41J2/16585
摘要： A supply unit is provided to supply humidified gas near a nozzle array of a line-type recording head. The flow-rate distribution of the supplied humidified gas in a direction of the nozzle array is changeable in accordance with a conveying region where a sheet is conveyed while opposing the nozzle array.
摘要翻译：提供供应单元以在线型记录头的喷嘴阵列附近提供加湿气体。所供应的加湿气体在喷嘴阵列的方向上的流量分布根据与喷嘴阵列相对的输送片材的输送区域而变化。

98. 发明申请

US20100102332A1 METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE 有权
标题翻译：在P型4H-SIC基板上形成OHMIC接触的方法
公开(公告)号：US20100102332A1
公开(公告)日：2010-04-29
申请号：US12530901
申请日：2008-03-13
申请人： Yasuo Takahashi , Masakatsu Maeda , Akinori Seki , Akira Kawahashi , Masahiro Sugimoto
发明人： Yasuo Takahashi , Masakatsu Maeda , Akinori Seki , Akira Kawahashi , Masahiro Sugimoto
IPC分类号： H01L29/24 , H01L21/768
CPC分类号： H01L29/7813 , H01L21/0485 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/732 , Y10S438/931
摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
摘要翻译：提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。

99. 发明授权

US07696071B2 Group III nitride based semiconductor and production method therefor 有权
标题翻译： III族氮化物基半导体及其制备方法
公开(公告)号：US07696071B2
公开(公告)日：2010-04-13
申请号：US11976450
申请日：2007-10-24
申请人： Masahito Kodama , Eiko Hayashi , Masahiro Sugimoto
发明人： Masahito Kodama , Eiko Hayashi , Masahiro Sugimoto
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02433 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： The invention provides a method for producing a group III nitride based semiconductor having a reduced number of crystal defects.A GaN layer 2 is epitaxially grown on a sapphire substrate 1 having C-plane as a main plane (FIG. 1A). Then, the layer is wet-etched by use of a 25% aqueous TMAH solution at 85° C. for one hour, to thereby form an etch pit 4 (FIG. 1B). Then, a GaN layer 5 is grown on the GaN layer 2 through the ELO method (FIG. 1C). The thus-formed GaN layer 5 has a screw dislocation density lower than that of the GaN layer 2.
摘要翻译：本发明提供一种具有减少晶体缺陷数的III族氮化物基半导体的制造方法。在具有C面作为主平面的蓝宝石衬底1上外延生长GaN层2（图1A）。然后，使用25％TMAH水溶液在85℃湿法蚀刻该层1小时，从而形成蚀刻坑4（图1B）。然后，通过ELO方法在GaN层2上生长GaN层5（图1C）。如此形成的GaN层5的螺旋位错密度低于GaN层2的位错密度。

100. 发明申请

US20090134456A1 Semiconductor devices and method of manufacturing them 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090134456A1
公开(公告)日：2009-05-28
申请号：US11921085
申请日：2006-05-25
申请人： Masahiro Sugimoto , Tetsu Kachi , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
发明人： Masahiro Sugimoto , Tetsu Kachi , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/207 , H01L29/0623 , H01L29/0649 , H01L29/0653 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7828 , H01L29/7832
摘要： The present invention aims to suppress the diffusion of p-type impurities (typically magnesium), included in a semiconductor region of a III-V compound semiconductor, into an adjoining different semiconductor region. A semiconductor device 10 of the present invention comprises a first semiconductor region 28 of gallium nitride (GaN) including p-type impurities that consist of magnesium, a second semiconductor region 34 of gallium nitride, and an impurity diffusion suppression layer 32 of silicon oxide (SiO2) located between the first semiconductor region 28 and the second semiconductor region 34.
摘要翻译：本发明旨在抑制包含在III-V族化合物半导体的半导体区域中的p型杂质（通常为镁）扩散到邻接的不同半导体区域中。本发明的半导体器件10包括由镁构成的p型杂质，氮化镓的第二半导体区域34和氧化硅的杂质扩散抑制层32的氮化镓（GaN）的第一半导体区域28（ SiO 2），位于第一半导体区域28和第二半导体区域34之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式