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91. 发明授权

US5005096A Magnetoresistive read transducer having hard magnetic shunt bias 失效
标题翻译：具有硬磁分路偏置的磁阻读取传感器
公开(公告)号：US5005096A
公开(公告)日：1991-04-02
申请号：US287970
申请日：1988-12-21
申请人： Mohamad T. Krounbi , Po-Kang Wang , Otto Voegeli
发明人： Mohamad T. Krounbi , Po-Kang Wang , Otto Voegeli
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive (MR) read transducer comprising an MR layer having passive end regions separated by a central active region. A longitudinal bias is produced by a thin film of hard magnetic material in the end regions only, and the thin film of hard magnetic material is spaced from the MR layer by a nonmagnetic spacer layer so that a magnetostatic longitudinal bias is produced of a level to maintain the passive end regions of the MR layer in a stable state.

92. 发明授权

US09296256B2 Fitting structure of wheel cover 有权
标题翻译：车轮罩的安装结构
公开(公告)号：US09296256B2
公开(公告)日：2016-03-29
申请号：US14057279
申请日：2013-10-18
申请人： Po-Kang Wang
发明人： Po-Kang Wang
IPC分类号： B60B7/12 , B60B7/08 , B60B7/06
CPC分类号： B60B7/12 , B60B7/063 , B60B7/08 , B60B2900/112 , B60B2900/115
摘要： A fitting structure of wheel covers is provided with a plurality of holes disposed circularly around a wheel cover. An inner edge of each hole is projected to form a positioning seat. A fixing seat is connected to a bottom edge of the positioning seat by a connecting segment. In a first position, a fixing seat is located adjacent each hole. The positioning seat includes two mounting rods at two sides respectively, a hook arranged at a center, and mounting space formed between the mounting rod and the hook. The fixing seat includes mounting blocks corresponding to the mounting space and mounted with the mounting rods, and in a second position, the stopping bars lean against the corresponding mounting rods.
摘要翻译：车轮盖的装配结构设置有围绕轮罩圆周设置的多个孔。每个孔的内边缘被投影以形成定位座。固定座通过连接段连接到定位座的底部边缘。在第一位置，固定座位于每个孔附近。定位座分别包括两侧的两个安装杆，一个位于中心的钩，以及安装杆和钩之间形成的安装空间。固定座包括对应于安装空间并安装有安装杆的安装块，并且在第二位置，止动杆靠在相应的安装杆上。

93. 发明授权

US08625234B2 Graded bevel tapered write pole design for field enhancement 有权
标题翻译：分级斜面锥形写柱设计用于场增强
公开(公告)号：US08625234B2
公开(公告)日：2014-01-07
申请号：US12150553
申请日：2008-04-29
申请人： Lijie Guan , Po-Kang Wang , Moris Dovek , Joe Smyth , Kenichi Takano , Yoshitaka Sasaki
发明人： Lijie Guan , Po-Kang Wang , Moris Dovek , Joe Smyth , Kenichi Takano , Yoshitaka Sasaki
IPC分类号： G11B5/31
CPC分类号： G11B5/1278 , G11B5/232 , G11B5/3116 , G11B5/3146
摘要： A structure and a process for a perpendicular write pole that provides increased magnetic flux at the ABS is disclosed. This is accomplished by increasing the amount of write flux that originates above the write gap, without changing the pole taper at the ABS. Three embodiment of the invention are discussed.
摘要翻译：公开了一种用于在ABS处提供增加的磁通量的垂直写入极的结构和工艺。这是通过增加起始于写入间隙的写入通量的量来实现的，而不改变ABS处的极锥度。讨论本发明的三个实施例。

94. 发明申请

US20130240963A1 STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain 有权
标题翻译： STT-MRAM参考层具有基本上减少的杂散场并且由单个磁畴组成
公开(公告)号：US20130240963A1
公开(公告)日：2013-09-19
申请号：US13421963
申请日：2012-03-16
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
摘要： An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
摘要翻译：形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

95. 发明授权

US08178363B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08178363B2
公开(公告)日：2012-05-15
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

96. 发明授权

US08138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权
标题翻译：用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法
公开(公告)号：US08138561B2
公开(公告)日：2012-03-20
申请号：US12284066
申请日：2008-09-18
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

97. 发明授权

US08062909B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US08062909B2
公开(公告)日：2011-11-22
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

98. 发明授权

US08039885B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08039885B2
公开(公告)日：2011-10-18
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

99. 发明授权

US07750620B2 MTJ sensor based method to measure an electric current 有权
标题翻译：基于MTJ传感器的测量电流的方法
公开(公告)号：US07750620B2
公开(公告)日：2010-07-06
申请号：US12321841
申请日：2009-01-26
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R15/18 , G01R11/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R15/205 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3277 , H01F41/302
摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.
摘要翻译：通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

100. 发明授权

US07613868B2 Method and system for optimizing the number of word line segments in a segmented MRAM array 失效
标题翻译：用于优化分段MRAM阵列中字线段数量的方法和系统
公开(公告)号：US07613868B2
公开(公告)日：2009-11-03
申请号：US10865717
申请日：2004-06-09
申请人： Hsu Kai (Karl) Yang , Xizeng Shi , Po-Kang Wang , Bruce Yee Yang
发明人： Hsu Kai (Karl) Yang , Xizeng Shi , Po-Kang Wang , Bruce Yee Yang
IPC分类号： G06F13/16 , G11C11/15
CPC分类号： G11C11/15 , G11C8/14
摘要： A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.
摘要翻译：公开了一种用于编程和读取磁存储器的方法和系统。磁存储器包括多个可选字线段和对应于每个字线段的多个磁存储单元。该方法和系统包括读取对应于字线段的磁存储单元以确定每个磁存储单元的状态。该方法和系统还包括在读取之后将数据写入对应于字线段的磁性单元的一部分。所述方法和系统还包括将所述状态重写为与写入所述磁性单元的所述部分基本相同的时间对应于所述字线段的所述磁存储单元的剩余部分。

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