专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US08805566B2 Product line management system and method thereof 有权
标题翻译：产品线管理系统及其方法
公开(公告)号：US08805566B2
公开(公告)日：2014-08-12
申请号：US13040235
申请日：2011-03-03
申请人： Shih-Fang Wong , Xin Lu , Fei Wang , Peng Tang , Jia-Hong Yang , Hui-Feng Liu
发明人： Shih-Fang Wong , Xin Lu , Fei Wang , Peng Tang , Jia-Hong Yang , Hui-Feng Liu
IPC分类号： G06F19/00
CPC分类号： G05B19/418 , G05B2219/32183 , G05B2219/32196 , Y02P90/02 , Y02P90/14 , Y02P90/22
摘要： A method testing the quality of products applied to a system is provided. Each product includes a unique identification number. The system includes a data storage device and test devices. The data storage device includes a first table recording identification numbers, test types, and test results, each test device stores a second table records the identification numbers and the test types. The method includes: obtaining the identification number; obtaining the test type; determining whether a test type previous to the test type exists; and generating first information to prompt the operator to return the to-be-tested product to the workstation of previous test type when the test result corresponding to the existed previous test type does not exist or the test result corresponding to the existed previous test type is a first value.
摘要翻译：提供了一种测试应用于系统的产品质量的方法。每个产品都包含唯一的识别号码。该系统包括一个数据存储设备和测试设备。数据存储装置包括记录识别号，测试类型和测试结果的第一表，每个测试设备存储第二表记录标识号和测试类型。该方法包括：获取识别号码; 获得测试类型; 确定是否存在测试类型之前的测试类型; 并且当不存在与现有的先前测试类型相对应的测试结果或者与现有的测试类型相对应的测试结果是生成第一信息以提示操作者将待测试产品返回到先前测试类型的工作站第一个值。

92. 发明申请

US20140142308A1 PHOTOELECTRIC MATERIALS AND PREPARATION THEREOF 有权
标题翻译：光电材料及其制备
公开(公告)号：US20140142308A1
公开(公告)日：2014-05-22
申请号：US14003734
申请日：2012-03-27
申请人： Yongsheng Chen , Xiangjian Wan , Yongsheng Liu , Zhi Li , Jiaoyan Zhou , Fei Wang , Guangrui He , Guankui Long
发明人： Yongsheng Chen , Xiangjian Wan , Yongsheng Liu , Zhi Li , Jiaoyan Zhou , Fei Wang , Guangrui He , Guankui Long
IPC分类号： H01L31/0216
CPC分类号： H01L31/02167 , C07D333/22 , C07D333/24 , C07D409/14 , C07D417/14 , C07D495/04 , C08G61/123 , C08G61/126 , C08G2261/1642 , C08G2261/1644 , C08G2261/226 , C08G2261/3223 , C08G2261/3243 , C08G2261/3246 , C08G2261/344 , H01B1/127 , H01L51/0036 , H01L51/0037 , H01L51/0053 , H01L51/0064 , H01L51/0068 , H01L51/0071 , H01L51/0074 , H01L51/0094 , H01L51/4253 , H01L2251/308 , H01L2251/53 , Y02E10/549
摘要： Receptor type oligothiopene compounds, methods of preparing the compounds, and use of the compounds in photoelectric materials.
摘要翻译：受体型寡头孢烯烃化合物，化合物的制备方法和化合物在光电材料中的应用。

93. 发明授权

US08716111B2 Method for manufacturing trench type superjunction device and trench type superjunction device 有权
标题翻译：沟槽式超导装置及沟槽式超导装置的制造方法
公开(公告)号：US08716111B2
公开(公告)日：2014-05-06
申请号：US13167450
申请日：2011-06-23
申请人： Fei Wang , Shengan Xiao , Wensheng Qian
发明人： Fei Wang , Shengan Xiao , Wensheng Qian
IPC分类号： H01L21/20
CPC分类号： H01L21/26513 , H01L21/26586 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/7802 , H01L29/7811
摘要： A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and N type regions is produced, wherein the P type region is formed by P type silicon filled in the trench and P type implantation regions below the trench. The present invention can greatly improve the breakdown voltage of a super junction MOSFET.
摘要翻译：公开了一种用于制造沟槽型超结装置的方法。该方法包括在每个沟槽的底部下方的N型外延层中形成一个或多个P型注入区的步骤。通过使用该方法，制造具有交替的P型和N型区域的超接合器件，其中P型区域由填充在沟槽中的P型硅和沟槽下方的P型注入区域形成。本发明可以大大提高超结MOSFET的击穿电压。

94. 发明授权

US08698741B1 Methods and apparatus for medical device cursor control and touchpad-based navigation 有权
标题翻译：医疗设备光标控制和触摸板导航的方法和设备
公开(公告)号：US08698741B1
公开(公告)日：2014-04-15
申请号：US12355082
申请日：2009-01-16
申请人： Fei Wang , Martin Crnkovich
发明人： Fei Wang , Martin Crnkovich
IPC分类号： G06F3/033
CPC分类号： G06F3/0488 , G06F19/00 , G16H40/63
摘要： The invention provides, in some aspects, medical apparatus with software-based cursor control and graphical user interface hotspot selection. This can be used, by way of non-limiting example, as part of a graphical user interface by which doctors, nurses, patient care technicians, other health care providers, and/or patients can enter data into enter data and/or to control the apparatus and/or associated medical equipment.
摘要翻译：本发明在一些方面提供了具有基于软件的光标控制和图形用户界面热点选择的医疗装置。作为图形用户界面的一部分，这可以作为非限制性示例使用，医生，护士，患者护理技术人员，其他医疗保健提供者和/或患者可以通过该界面将数据输入到输入数据和/或控制该装置和/或相关联的医疗设备。

95. 发明申请

US20130323627A1 Photomasks, Methods Of Forming A Photomask, And Methods Of Photolithographically Patterning A Substrate 有权
标题翻译：光掩模，形成光掩模的方法和光刻图案的方法
公开(公告)号：US20130323627A1
公开(公告)日：2013-12-05
申请号：US13488231
申请日：2012-06-04
申请人： Fei Wang , Ezequiel Vidal Russell , Chung-Yi Lee
发明人： Fei Wang , Ezequiel Vidal Russell , Chung-Yi Lee
IPC分类号： G03F1/26 , G03F1/32 , G03F1/76 , G03F7/20 , G03F1/68 , G03F1/80 , G03F1/00 , G03F1/30
CPC分类号： G03F1/32 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/36 , G03F1/38 , G03F1/68
摘要： A photomask includes a substrate having a device region and an adjacent edge region over transparent material. The device region includes spaced primary features of constant pitch at least adjacent the edge region. The edge region includes spaced sub-resolution assist features of the constant pitch of the spaced primary features at least adjacent the device region and which are off-phase by from about 30° to about 150° from +/−180°. Additional embodiments, including methods, are disclosed.
摘要翻译：光掩模包括具有在透明材料上的器件区域和相邻边缘区域的衬底。器件区域包括至少邻近边缘区域的恒定间距的间隔的主要特征。边缘区域包括间隔开的主要特征的至少相邻于器件区域的恒定间距的间隔的次分辨率辅助特征，并且与+/- 180°相差约30°至约150°。公开了包括方法的其它实施例。

96. 发明申请

US20130282393A1 COMBINING KNOWLEDGE AND DATA DRIVEN INSIGHTS FOR IDENTIFYING RISK FACTORS IN HEALTHCARE 审中-公开
公开(公告)号：US20130282393A1
公开(公告)日：2013-10-24
申请号：US13611366
申请日：2012-09-12
申请人： Shahram Ebadollahi , Jianying Hu , Dijun Luo , Marianthi Markatou , Jimeng Sun , Fei Wang
发明人： Shahram Ebadollahi , Jianying Hu , Dijun Luo , Marianthi Markatou , Jimeng Sun , Fei Wang
IPC分类号： G06Q50/22
CPC分类号： G06Q10/10 , G16H50/30
摘要： Systems and methods for risk factor identification include identifying a first set of risk factors from personal data. A second set of risk factors is identified from at least one of a user input and a knowledge source. The first set is combined with the second set, using a processor, by selecting a number of risk factors from the first set that augment the second set of risk factors to determine a combined list of risk factors that predict a condition of interest.

97. 发明授权

US08546882B2 Terminal structure for superjunction device and method of manufacturing the same 有权
标题翻译：超结装置的端子结构及其制造方法
公开(公告)号：US08546882B2
公开(公告)日：2013-10-01
申请号：US13076289
申请日：2011-03-30
申请人： Shengan Xiao , Fei Wang , Yanping Liu
发明人： Shengan Xiao , Fei Wang , Yanping Liu
IPC分类号： H01L21/331
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/7811
摘要： A terminal structure for superjunction device is disclosed. The terminal structure comprises from inside out at least one P type implantation ring and several P type trench rings formed in an N type epitaxial layer to form alternating P type and N type regions. A channel cut-off ring is formed at the border of the device. The P type implantation ring is formed adjacent to the active area of the device and covers at least one trench ring. A terminal dielectric layer is formed to cover the P type implantation ring and the trench rings. A plurality of field plates are formed above the terminal dielectric layer. Methods of manufacturing terminal structure are also disclosed.
摘要翻译：公开了一种超结装置的端子结构。端子结构包括至少一个P型注入环和形成在N型外延层中的多个P型沟槽，以形成交替的P型和N型区。在设备的边界处形成通道切断环。 P型注入环邻近器件的有源区形成并且覆盖至少一个沟槽环。形成端子电介质层以覆盖P型注入环和沟槽环。多个场板形成在端子电介质层的上方。还公开了端子结构的制造方法。

98. 发明申请

US20130244429A1 SHOT BLASTING MATERIAL USED FOR SILICON SUBSTRATE SURFACE TREATMENT AND METHOD FOR PREPARING SILICON SUBSTRATE 审中-公开
标题翻译：用于硅基材表面处理的喷砂材料及其制备硅基材的方法
公开(公告)号：US20130244429A1
公开(公告)日：2013-09-19
申请号：US13884804
申请日：2012-08-15
申请人： Dandan Wan , Fei Wang , Maria Fabra-Puchol
发明人： Dandan Wan , Fei Wang , Maria Fabra-Puchol
IPC分类号： H01L31/0236
CPC分类号： H01L31/02366 , B24C3/322 , B24C11/00 , H01L31/1804 , H01L2924/0002 , Y02E10/547 , Y02P70/521
摘要： A shot blasting material used for silicon substrate surface treatment and a method for preparing a silicon substrate. The shot blasting material includes silicon carbide particles, and the median particle diameter of the silicon carbide particles is 1 μm to 30 μm. Surface treatment can be performed on at least one surface of a silicon substrate in a bombarding manner through the shot blasting material. The particle diameter of the silicon carbide particles used for bombarding is small, and only a mechanical damage layer with a small thickness is formed on a first surface of the silicon substrate, so in the subsequent chemical treatment procedure, it is not required to add concentrated sulfuric acid to a chemical corrosive liquid, and a corrosion step and a cleaning step may be combined into one step, thereby reducing the process flow time, and decreasing the process cost; meanwhile, the method is environment friendly.
摘要翻译：用于硅衬底表面处理的抛丸材料和制备硅衬底的方法。喷丸材料包括碳化硅颗粒，碳化硅颗粒的中值粒径为1〜30μm。可以通过抛丸材料以轰击的方式在硅衬底的至少一个表面上进行表面处理。用于轰击的碳化硅颗粒的粒径小，并且在硅衬底的第一表面上仅形成厚度小的机械损伤层，因此在随后的化学处理过程中，不需要添加浓缩硫酸化学腐蚀性液体，腐蚀步骤和清洗步骤可以组合成一个步骤，从而减少工艺流程，降低工艺成本; 同时，该方法环保。

99. 发明授权

US08455454B2 miR 204, miR 211, their anti-miRs, and therapeutic uses of same 有权
标题翻译： miR 204，miR 211，其抗miRs及其治疗用途
公开(公告)号：US08455454B2
公开(公告)日：2013-06-04
申请号：US13060877
申请日：2009-08-26
申请人： Fei Wang , Sheldon Miller , Congxiao Zhang , Arvydas Maminishkis
发明人： Fei Wang , Sheldon Miller , Congxiao Zhang , Arvydas Maminishkis
IPC分类号： C12N15/11 , A61K48/00 , C07H21/02 , C07H21/04
CPC分类号： A61K31/7105 , C12N15/1138 , C12N2310/113 , C12N2310/14 , C12N2310/141
摘要： Embodiments of the invention provide methods of preventing or treating detrimental epithelial cell proliferation, loss of epithelial cell differentiation, age-related macular degeneration and/or proliferative vitreal retinopathy in an individual comprising administering to an individual in need thereof an effective amount of miR 204, an effective amount of miR 211, or an effective amount of a mixture of miR 204 and miR 211. A further embodiment of the invention provides a method of facilitating the transport of a substance across an epithelium in an individual comprising administrating to an individual an effective amount of anti-miR 204, an effective amount of anti-miR 211, or an effective amount of a mixture of anti-miR 204 and anti-miR 211. Additional embodiments of the invention include pharmaceutical compositions of miR 204 and/or miR 211 and pharmaceutical compositions of anti-miR 204 and/or anti-miR 211.
摘要翻译：本发明的实施方案提供预防或治疗个体中有害上皮细胞增殖，上皮细胞分化丧失，年龄相关性黄斑变性和/或增殖性玻璃体视网膜病变的方法，包括向有需要的个体施用有效量的miR 204，有效量的miR 211或有效量的miR 204和miR 211的混合物。本发明的另一个实施方案提供了促进物质通过个体上皮的运输的方法，包括向个体施用有效量的miR 抗miR204的量，有效量的抗miR 211，或有效量的抗miR 204和抗miR 211的混合物。本发明的其它实施方案包括miR 204和/或miR 211的药物组合物和抗miR 204和/或抗miR 211的药物组合物。

100. 发明授权

US08441432B2 Display cell structure and electrode protecting layer compositions 有权
标题翻译：显示单元结构和电极保护层组合物
公开(公告)号：US08441432B2
公开(公告)日：2013-05-14
申请号：US13007139
申请日：2011-01-14
申请人： HongMei Zang , Kangtai Ren , Jack Hou , Wanheng Wang , Chia-Pu Chang , Jing-Den Chen , Yajuan Chen , Fei Wang , Yi-Shung Chaug , Quan Gu , Hui Chen
发明人： HongMei Zang , Kangtai Ren , Jack Hou , Wanheng Wang , Chia-Pu Chang , Jing-Den Chen , Yajuan Chen , Fei Wang , Yi-Shung Chaug , Quan Gu , Hui Chen
IPC分类号： G02F1/167 , G02B26/00
CPC分类号： G02F1/167 , C08G18/672 , C08L75/04 , G02F2001/1672 , G02F2001/1678 , G02F2202/023 , Y10T428/1036 , Y10T428/1059
摘要： The invention is directed to compositions of display cell structure and electrode protecting layers for improving the performance of display devices. The composition comprises a polar oligomeric or polymeric material having a glass transition temperature below about 100° C., and the resulting display cells or electrode protecting layer have an average crosslinking density of below about 1 crosslink point per 80 Dalton molecular weight.
摘要翻译：本发明涉及显示单元结构和电极保护层的组合物，用于改善显示装置的性能。该组合物包含玻璃化转变温度低于约100℃的极性低聚物或聚合物材料，所得显示器电池或电极保护层的平均交联密度低于每80道尔顿分子量约低于约1个交联点。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式