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91. 发明申请

US20050118449A1 Methods of forming particle-containing materials; and semiconductor constructions comprising particle-containing materials 有权
标题翻译：形成含颗粒材料的方法; 以及包含含颗粒的材料的半导体结构
公开(公告)号：US20050118449A1
公开(公告)日：2005-06-02
申请号：US10726328
申请日：2003-12-01
申请人： Garo Derderian , Gurtej Sandhu
发明人： Garo Derderian , Gurtej Sandhu
IPC分类号： B32B15/00 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76838 , C23C16/45525 , C23C16/45555 , H01L21/02126 , H01L21/02164 , H01L21/0226 , H01L21/0228 , H01L21/288 , H01L21/3141 , H01L21/3146 , H01L21/31608 , H01L21/31633 , H01L21/76829 , H01L21/76837 , Y10S438/962 , Y10S438/964 , Y10T428/12493 , Y10T428/12528 , Y10T428/12576 , Y10T428/12806 , Y10T428/1284
摘要： The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second monolayer is formed over the particles. Another aspect of the invention includes a construction containing a semiconductor substrate and a particle-impregnated conductive material over at least a portion of the semiconductor substrate. The particle-impregnated conductive material can include tungsten-containing particles within a layer which includes tantalum or tungsten.
摘要翻译：本发明包括形成含颗粒材料的方法，还包括包含含颗粒的材料的半导体结构。本发明的一个方面包括一种方法，其中在半导体衬底的至少一部分上形成第一单层，颗粒粘附到第一单层，并且在颗粒上方形成第二单层。本发明的另一方面包括在半导体衬底的至少一部分上包含半导体衬底和含有颗粒的导电材料的结构。颗粒浸渍的导电材料可以包括在包括钽或钨的层内的含钨颗粒。

92. 发明授权

US06890814B2 Methods for use in forming a capacitor and structures resulting from same 失效
标题翻译：用于形成电容器和由其产生的结构的方法
公开(公告)号：US06890814B2
公开(公告)日：2005-05-10
申请号：US10784563
申请日：2004-02-23
申请人： Gurtej S. Sandhu , Garo Derderian
发明人： Gurtej S. Sandhu , Garo Derderian
IPC分类号： H01L21/00 , H01L21/20 , H01L21/31 , H01L21/425 , H01L21/469 , H01L21/8242 , H01L23/58
CPC分类号： H01L28/40 , H01L27/1085 , H01L28/65 , H01L28/75
摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
摘要翻译：用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第高介电材料。可以在第二电极的至少一部分上形成附加层。其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

93. 发明申请

US20050064725A1 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates 有权
公开(公告)号：US20050064725A1
公开(公告)日：2005-03-24
申请号：US10671922
申请日：2003-09-24
申请人： Garo Derderian , Gurtej Sandhu
发明人： Garo Derderian , Gurtej Sandhu
IPC分类号： C23C16/44 , C23C16/455 , H01L21/285 , H01L21/31 , H01L21/44 , H01L21/469
CPC分类号： C23C16/45536 , C23C16/44 , H01L21/28562
摘要： The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least one of the precursors is asymmetric with respect to a physical property. A field influencing the asymmetric physical property is oriented within the reaction chamber, and is utilized to affect alignment of the precursor having the asymmetric property as the material is formed. The asymmetric physical property can, for example, be an anisotropic charge distribution associated with the precursor, and in such aspect, the field utilized to influence the asymmetric physical property can be an electric field provided within the reaction chamber and/or a magnetic field provided within the reaction chamber. The methodology of the present invention can be utilized in atomic layer deposition processes.

94. 发明申请

US20050045100A1 Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces 审中-公开
标题翻译：反应器，具有反应室的系统以及将材料沉积到微器件工件上的方法
公开(公告)号：US20050045100A1
公开(公告)日：2005-03-03
申请号：US10959448
申请日：2004-10-05
申请人： Garo Derderian
发明人： Garo Derderian
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4412 , C23C16/45508 , C23C16/45544 , C23C16/45574 , C23C16/4558
摘要： Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a method for depositing material onto a micro-device workpiece includes flowing a first gas along a first vector across a first portion and toward a center of the micro-device workpiece and flowing a second gas along a second vector across a second portion and toward the center of the micro-device workpiece. The second vector is transverse to the first vector. The method can further include exhausting the first gas from a region proximate to the center of the micro-device workpiece and exhausting the second gas from the region proximate to the center of the micro-device workpiece. Flowing the first gas can include depositing the first gas uniformly from a perimeter region to a center region of the micro-device workpiece.
摘要翻译：本文公开了反应器，具有反应室的系统以及将材料沉积到微器件工件上的方法。在一个实施例中，用于将材料沉积到微器件工件上的方法包括使第一气体沿着第一向量跨越微器件工件的第一部分并朝着微器件工件的中心流动，并使第二气体沿着第二向量横穿第二部分并朝向微器件工件的中心。第二个向量横向于第一个向量。该方法还可以包括从靠近微器件工件的中心的区域排出第一气体，并从靠近微器件工件的中心的区域排出第二气体。流动第一气体可以包括从第一气体均匀地沉积从微器件工件的周边区域到中心区域。

95. 发明申请

US20050022739A1 Apparatus and method for depositing materials onto microelectronic workpieces 审中-公开
公开(公告)号：US20050022739A1
公开(公告)日：2005-02-03
申请号：US10933605
申请日：2004-09-02
申请人： Craig Carpenter , Allen Mardian , Ross Dando , Kimberly Tschepen , Garo Derderian
发明人： Craig Carpenter , Allen Mardian , Ross Dando , Kimberly Tschepen , Garo Derderian
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

96. 发明授权

US06696745B2 Methods for use in forming a capacitor and structures resulting from same 失效
标题翻译：用于形成电容器和由其产生的结构的方法
公开(公告)号：US06696745B2
公开(公告)日：2004-02-24
申请号：US10087535
申请日：2002-02-27
申请人： Gurtej S. Sandhu , Garo Derderian
发明人： Gurtej S. Sandhu , Garo Derderian
IPC分类号： H01L21425
CPC分类号： H01L28/40 , H01L27/1085 , H01L28/65 , H01L28/75
摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
摘要翻译：用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第高介电材料。可以在第二电极的至少一部分上形成附加层。其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

97. 发明授权

US06429127B1 Methods for forming rough ruthenium-containing layers and structures/methods using same 失效
公开(公告)号：US06429127B1
公开(公告)日：2002-08-06
申请号：US09589849
申请日：2000-06-08
申请人： Garo Derderian , Vishnu K. Agarwal
发明人： Garo Derderian , Vishnu K. Agarwal
IPC分类号： H01L2144
CPC分类号： H01L28/84 , H01L27/10852 , H01L28/55 , H01L28/60 , H01L28/65 , H01L28/75
摘要： A method for forming a rough ruthenium-containing layer on the surface of a substrate assembly includes providing a ruthenium-containing precursor into the reaction chamber. A rough ruthenium layer may be deposited on the surface of the substrate assembly at a rate of about 100 Å/minute to about 500 Å/minute using the ruthenium-containing precursor. Further, a rough ruthenium oxide layer may be formed by providing a ruthenium-containing precursor and an oxygen-containing precursor into the reaction chamber to deposit the rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute. An anneal of the layers may be performed to further increase the roughness. In addition, conductive structures including a rough ruthenium layer or a rough ruthenium oxide layer are provided. Such layers may be used in conjunction with non-rough ruthenium and/or non-rough ruthenium oxide layers to form conductive structures. For example, such structures may be part of a capacitor structure, e.g., bottom electrode of a capacitor.

98. 发明授权

US06200874B1 Methods for use in forming a capacitor 失效
标题翻译：用于形成电容器的方法
公开(公告)号：US06200874B1
公开(公告)日：2001-03-13
申请号：US08918634
申请日：1997-08-22
申请人： Gurtej S. Sandhu , Garo Derderian
发明人： Gurtej S. Sandhu , Garo Derderian
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L27/1085 , H01L28/65 , H01L28/75
摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
摘要翻译：用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第高介电材料。可以在第二电极的至少一部分上形成附加层。其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

99. 发明授权

US6124626A Capacitor structures formed using excess oxygen containing material provided relative to electrodes thereof 有权
标题翻译：使用相对于其电极提供的含过量含氧材料形成的电容器结构
公开(公告)号：US6124626A
公开(公告)日：2000-09-26
申请号：US383052
申请日：1999-08-25
申请人： Gurtej S. Sandhu , Garo Derderian
发明人： Gurtej S. Sandhu , Garo Derderian
IPC分类号： H01L21/00 , H01L21/20 , H01L21/31 , H01L21/425 , H01L21/469 , H01L21/8242 , H01L23/58
CPC分类号： H01L28/40 , H01L28/65 , H01L28/75 , H01L27/1085
摘要： Formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
摘要翻译：电容器的形成包括通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在高电介质材料上形成第二电极。可以在第二电极的至少一部分上形成附加层。其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

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