专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US08501568B2 Method of forming flash memory with ultraviolet treatment 失效
标题翻译：用紫外线处理形成闪存的方法
公开(公告)号：US08501568B2
公开(公告)日：2013-08-06
申请号：US12256173
申请日：2008-10-22
申请人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
发明人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
IPC分类号： H01L21/326 , H01L21/8238 , H01L21/3205 , H01L21/4763 , H01L21/00 , H01L29/792
CPC分类号： H01L21/3185 , H01L21/28282 , H01L21/3105 , H01L21/3115 , H01L21/31155 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
摘要翻译：提供了形成闪速存储器件的方法。闪存器件包括在衬底上的二氧化硅层和形成在二氧化硅层上的氮化硅层。氮化硅层的性质可以通过以下任何方式改变：将氮化硅层暴露于紫外线辐射，将氮化硅层暴露于电子束，以及通过等离子体处理氮化硅层。介电材料沉积在氮化硅层上，并且在电介质材料上形成导电日期。具有改进的氮化硅层的闪速存储器件提供了非易失性存储器件的单元电池的电荷保持容量和电荷保持时间的增加。

92. 发明申请

US20130008878A1 THERMAL FLUX ANNEALING INFLUENCE OF BURIED SPECIES 有权
标题翻译： ED ED。。。。。。。。。。。。。。。。。。
公开(公告)号：US20130008878A1
公开(公告)日：2013-01-10
申请号：US13619898
申请日：2012-09-14
申请人： Dean C. Jennings , Amir Al-Bayati
发明人： Dean C. Jennings , Amir Al-Bayati
IPC分类号： B23K26/00
CPC分类号： H01L21/268 , B23K26/0738 , H01L21/26533 , H01L21/324
摘要： A method including introducing a species into a substrate including semiconductor material; and translating linearly focused electromagnetic radiation across a surface of the substrate, the electromagnetic radiation being sufficient to thermally influence the species. An apparatus including an electromagnetic radiation source; a stage having dimensions suitable for accommodating a semiconductor substrate within a chamber; an optical element disposed between the electromagnetic radiation source and the stage to focus radiation from the electromagnetic radiation source into a line having a length determined by the diameter of a substrate to be placed on the stage; and a controller coupled to the electromagnetic radiation source including machine readable program instructions that allow the controller to control the depth into which a substrate is exposed to the radiation.
摘要翻译：一种方法，包括将物质引入到包括半导体材料的基板中; 并且将线性聚焦的电磁辐射平移在衬底的表面上，电磁辐射足以热影响物质。一种包括电磁辐射源的设备; 具有适于容纳半导体衬底在腔室内的尺寸的平台; 设置在所述电磁辐射源和所述台之间的光学元件，用于将来自所述电磁辐射源的辐射聚焦成具有由要放置在所述台上的基板的直径确定的长度的线; 以及耦合到电磁辐射源的控制器，包括允许控制器控制衬底暴露于辐射的深度的机器可读程序指令。

93. 发明申请

US20100096687A1 NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER 有权
标题翻译：非易失性存储器，含有硝酸盐电荷捕获层
公开(公告)号：US20100096687A1
公开(公告)日：2010-04-22
申请号：US12255617
申请日：2008-10-21
申请人： Mihaela BALSEANU , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
发明人： Mihaela BALSEANU , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
IPC分类号： H01L29/78 , H01L21/3205 , H01L21/31
CPC分类号： H01L21/3185 , H01L21/28282 , H01L21/3105 , H01L21/3115 , H01L21/31155 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
摘要翻译：提供闪速存储器件和形成闪存器件的方法。闪速存储器件包括具有包含碳，硼或氧的掺杂剂的掺杂氮化硅层。掺杂的氮化硅层在该层中产生更高数量和更高浓度的氮和硅悬挂键，并且提供了非易失性存储器件的单元电池的电荷保持容量和电荷保留时间的增加。

94. 发明授权

US07566655B2 Integration process for fabricating stressed transistor structure 有权
标题翻译：用于制造应力晶体管结构的集成工艺
公开(公告)号：US07566655B2
公开(公告)日：2009-07-28
申请号：US11398436
申请日：2006-04-05
申请人： Mihaela Balseanu , Jia Lee , Mei-Yee Shek , Amir Al-Bayati , Li-Qun Xia , Hichem M'Saad
发明人： Mihaela Balseanu , Jia Lee , Mei-Yee Shek , Amir Al-Bayati , Li-Qun Xia , Hichem M'Saad
IPC分类号： H01L21/44
CPC分类号： H01L29/7843 , C23C16/345 , C23C16/56 , H01L21/28044 , H01L21/823807 , H01L21/823835 , H01L21/823842 , H01L29/4925 , H01L29/66545 , H01L29/66583
摘要： A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP of a nitride spacer and polysilicon gate, and subsequent deposition of a high stress etch stop layer, enhance strain and improve device performance. Germanium may be deposited or implanted into the gate structure in order to facilitate stress control.
摘要翻译：工艺流程集成方案采用一种或多种技术来控制由此形成的半导体器件中的应力。根据一个实施例，由氮化物间隔物和多晶硅栅极的RTP贡献的累积应力以及随后沉积高应力蚀刻停止层，增强应变并提高器件性能。可以将锗沉积或植入栅极结构中以便于应力控制。

95. 发明申请

US20080254233A1 PLASMA-INDUCED CHARGE DAMAGE CONTROL FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES 审中-公开
标题翻译：用于等离子体增强化学蒸气沉积过程的等离子体诱导电荷损失控制
公开(公告)号：US20080254233A1
公开(公告)日：2008-10-16
申请号：US11733531
申请日：2007-04-10
申请人： KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
发明人： KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
IPC分类号： C23C14/28
CPC分类号： C23C16/26 , C23C16/52
摘要： Methods of depositing amorphous carbon films on substrates are provided herein. The methods reduce or prevent plasma-induced charge damage to the substrates from the deposition of the amorphous carbon films. In one aspect, an initiation layer of amorphous carbon is deposited at a low RF power level and/or at a low hydrocarbon compound/inert gas flow rate ratio before a bulk layer of amorphous carbon is deposited. After the deposition of the initiation layer, the RF power, hydrocarbon flow rate, and inert gas flow rate may be ramped to final values for the deposition of the bulk layer, wherein the RF power ramp rate is typically greater than the ramp rates of the hydrocarbon compound and of the inert gas. In another aspect, a method of minimizing plasma-induced charge damage includes depositing a seasoning layer on one or more interior surfaces of a chamber before the deposition of the amorphous carbon film on a substrate therein or coating the interior surfaces with an oxide or dielectric layer during manufacturing.
摘要翻译：本文提供了在基片上沉积非晶碳膜的方法。该方法从无定形碳膜的沉积中减少或防止等离子体对基板的电荷损伤。在一个方面，在堆积无定形碳沉积层之前，以低RF功率水平和/或低烃化合物/惰性气体流速比沉积无定形碳的起始层。在起始层的沉积之后，RF功率，烃流速和惰性气体流速可以斜坡化到用于沉积体层的最终值，其中RF功率斜坡率通常大于烃化合物和惰性气体。在另一方面，一种使等离子体感应的电荷损伤最小化的方法包括在将非晶碳膜沉积在基底上之前，在腔室的一个或多个内表面上沉积调味层，或者用氧化物或介电层涂覆内表面在制造过程中。

96. 发明申请

US20080008842A1 Method for plasma processing 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20080008842A1
公开(公告)日：2008-01-10
申请号：US11483951
申请日：2006-07-07
申请人： Jyr Hong Soo , Matthew Spuller , Michael S. Cox , Martin Jay Seamons , Amir Al-Bayati , Bok Hoen Kim , Hichem M'Saad
发明人： Jyr Hong Soo , Matthew Spuller , Michael S. Cox , Martin Jay Seamons , Amir Al-Bayati , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H05H1/24
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32935
摘要： Methods for reducing plasma instability for plasma depositing a dielectric layer are provided. In one embodiment, the method includes providing a substrate in a plasma processing chamber, flowing a gas mixture into the chamber, applying an RF power to an electrode to form a plasma in the chamber, and collecting DC bias information. In another embodiment, the method for plasma processing includes obtaining of DC bias information over a plurality of plasma generation events, and determining an RF power application parameter from the DC bias information.
摘要翻译：提供了用于降低等离子体沉积介电层的等离子体不稳定性的方法。在一个实施例中，该方法包括在等离子体处理室中提供衬底，将气体混合物流入室中，向电极施加RF功率以在腔室中形成等离子体，并收集DC偏置信息。在另一个实施例中，等离子体处理的方法包括在多个等离子体产生事件中获得DC偏置信息，以及从DC偏置信息确定RF功率应用参数。

97. 发明申请

US20060289795A1 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
标题翻译：真空反应室与X灯加热器
公开(公告)号：US20060289795A1
公开(公告)日：2006-12-28
申请号：US11383383
申请日：2006-05-15
申请人： Dale Dubois , Juan Rocha-Alvarez , Amir Al-Bayati , Khaled Elsheref , Alexandros Demos , Lester D'Cruz , Hichem M'Saad , Ashish Shah , Takashi Shimizu , Naoyuki Iwasaki
发明人： Dale Dubois , Juan Rocha-Alvarez , Amir Al-Bayati , Khaled Elsheref , Alexandros Demos , Lester D'Cruz , Hichem M'Saad , Ashish Shah , Takashi Shimizu , Naoyuki Iwasaki
IPC分类号： G21G5/00
CPC分类号： H01J37/317 , H01J2237/2001
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。在一个实施例中，真空室包括阴极，阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

98. 发明授权

US06559454B1 Ion beam generation apparatus 有权
标题翻译：离子束发生装置
公开(公告)号：US06559454B1
公开(公告)日：2003-05-06
申请号：US09763546
申请日：2001-05-29
申请人： Adrian John Murrell , Erik Jan Hilda Collart , Bernard Francis Harrison , Amir Al-Bayati , Chris James Burgess , David Armour , Andrew Holmes , Simon Povall , Drew Arnold , Paul Anthony Burfield
发明人： Adrian John Murrell , Erik Jan Hilda Collart , Bernard Francis Harrison , Amir Al-Bayati , Chris James Burgess , David Armour , Andrew Holmes , Simon Povall , Drew Arnold , Paul Anthony Burfield
IPC分类号： H01J3715
CPC分类号： H01J27/022 , H01J2237/08 , H01J2237/31701
摘要： An ion beam generation apparatus comprising an ion source (20) for generating ions, and a tetrode extraction assembly (11) comprising four electrodes for extracting and accelerating ions from the ion source. The extraction assembly comprises a source electrode (22) at the potential of the ion source, an extraction electrode (23) adjacent to the source electrode to extract ions from the ion source (20), a ground electrode (25), and a suppression electrode (24) between the extraction electrode and the ground electrode. Each electrode has an aperture to allow the ion beam to pass therethrough. The gap between the extraction (23) and suppression (24) electrodes is variable in the direction of ion beam travel.
摘要翻译：一种离子束产生装置，包括用于产生离子的离子源（20）和四极提取组件（11），其包括用于从离子源提取和加速离子的四个电极。提取组件包括位于离子源电位的源电极（22），与源电极相邻的提取电极（23），用于从离子源（20）提取离子，接地电极（25）和抑制提取电极和接地电极之间的电极（24）。每个电极具有允许离子束通过的孔。提取（23）和抑制（24）电极之间的间隙在离子束行进方向上是可变的。

99. 发明授权

US08252653B2 Method of forming a non-volatile memory having a silicon nitride charge trap layer 有权
标题翻译：形成具有氮化硅电荷陷阱层的非易失性存储器的方法
公开(公告)号：US08252653B2
公开(公告)日：2012-08-28
申请号：US12255617
申请日：2008-10-21
申请人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
发明人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/4763 , H01L21/31 , H01L21/469 , H01L29/792 , H01L29/66
CPC分类号： H01L21/3185 , H01L21/28282 , H01L21/3105 , H01L21/3115 , H01L21/31155 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
摘要翻译：提供闪速存储器件和形成闪存器件的方法。闪速存储器件包括具有包含碳，硼或氧的掺杂剂的掺杂氮化硅层。掺杂的氮化硅层在该层中产生更高数量和更高浓度的氮和硅悬挂键，并且提供非易失性存储器件的单元电池的电荷保持容量和电荷保留时间的增加。

100. 发明申请

US20110263074A1 APPARATUS AND METHODS FOR REDUCING LIGHT INDUCED DAMAGE IN THIN FILM SOLAR CELLS 审中-公开
标题翻译：用于减少薄膜太阳能电池中的光诱导损伤的装置和方法
公开(公告)号：US20110263074A1
公开(公告)日：2011-10-27
申请号：US12765458
申请日：2010-04-22
申请人： Amir Al-Bayati , Yong K. Chae , Shuran Sheng , Bhaskar Kumar , Eran Valfer
发明人： Amir Al-Bayati , Yong K. Chae , Shuran Sheng , Bhaskar Kumar , Eran Valfer
IPC分类号： H01L31/18
CPC分类号： H01L31/202 , C23C16/24 , C23C16/505 , H01L21/02532 , H01L21/0262 , H01L31/03767 , Y02E10/50 , Y02P70/521
摘要： Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer. In accordance with further aspects of the present invention, the controller controls the RF power and the deposition rate so that a product (x) of the RF power in watts, the deposition rate of the i-layer in nm per min and the thickness of the i-layer in nm is less than a predetermined number y and satisfies the equation y=5E11*x+3.3749 plus or minus a margin.
摘要翻译：公开了一种在用于薄膜光伏电池的衬底上形成含硅i层的设备和方法。该装置包括限定包含衬底的处理区域，氢源和耦合到等离子体产生区域的硅烷源的室主体，在等离子体产生区域中以功率电平施加功率以产生等离子体和沉积物的RF电源将所选择的沉积速率的含硅i层以选定的厚度和控制器进行。控制器控制i层在基板上的功率水平和沉积速率，使得薄膜太阳能电池呈现符合RF功率，沉积速率和所选厚度的产品的线性拟合的光诱导损伤的i层。根据本发明的另外的方面，控制器控制RF功率和沉积速率，使得RF功率的乘积（x）以瓦为单位，i层的沉积速率（nm / min）和 i层的nm小于预定数量y，并且满足等式y = 5E11 * x + 3.3749加或减边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式