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    • 94. 发明申请
    • Hammer having enhanced strength
    • 锤子力量增强
    • US20060207391A1
    • 2006-09-21
    • US11083000
    • 2005-03-17
    • John Chen
    • John Chen
    • B25D1/00B25D1/12
    • B25D1/12B25D1/045B25G1/01
    • A hammer includes a handle, an elongated support bar having a first end mounted on a first end of the handle, a grip portion mounted on the support bar and having an end portion rested on the first end of the handle, a fitting member mounted on the first end of the support bar and inserted into and locked in the end portion of the grip portion, and a limit unit adjustably mounted on a second end of the support bar and rested on the fitting member to limit movement of the fitting member. Thus, the grip portion is positioned on the handle by the fitting member and the limit unit on the support bar, so that the grip portion is mounted on the handle rigidly and stably.
    • 锤包括手柄,具有安装在手柄的第一端上的第一端的细长支撑杆,安装在支撑杆上并具有搁置在手柄的第一端上的端部的把手部分,安装在手柄上的配件 支撑杆的第一端并插入并锁定在把手部分的端部,以及限制单元,其可调节地安装在支撑杆的第二端上并且搁置在配合构件上以限制配合构件的运动。 因此,通过配合构件和支撑杆上的限制单元将把手部分定位在手柄上,使得握持部刚性且稳定地安装在手柄上。
    • 95. 发明申请
    • Metal hard mask method and structure for strained silicon MOS transistors
    • 应变硅MOS晶体管的金属硬掩模方法和结构
    • US20060194395A1
    • 2006-08-31
    • US11321767
    • 2005-12-28
    • Xian NingHanming WuJohn Chen
    • Xian NingHanming WuJohn Chen
    • H01L21/336H01L29/76
    • H01L29/7848H01L21/3081H01L21/32139H01L29/165H01L29/66628H01L29/66636
    • A semiconductor integrated circuit device. The device has a semiconductor substrate and a dielectric layer overlying the semiconductor substrate. The device also has a gate structure including edges. A metal hard mask layer is overlying the gate structure. A dielectric layer is formed sidewall spacers on the edges of the gate structure to protect the gate structure including the edges. An exposed portion of the metal hard mask layer is overlying the gate structure. A silicon germanium fill material is provided in an etched source region and an etched drain region. The etched source region and the etched drain region are each coupled to the gate structure. The device has a strained channel region between the filled source region and the filled drain region from at least the silicon germanium material formed in the etched source region and the etched drain region. An electrical connection is coupled to the metal hard mask overlying the gate structure. Optionally, the device has a second metal layer overlying the metal hard mask.
    • 半导体集成电路器件。 该器件具有覆盖半导体衬底的半导体衬底和电介质层。 该装置还具有包括边缘的门结构。 金属硬掩模层覆盖栅极结构。 电介质层在门结构的边缘上形成侧墙,以保护包括边缘的栅结构。 金属硬掩模层的暴露部分覆盖栅极结构。 在蚀刻源区域和蚀刻漏极区域中提供硅锗填充材料。 蚀刻的源极区域和蚀刻的漏极区域各自耦合到栅极结构。 该器件在至少形成在蚀刻源极区域和蚀刻漏极区域中的硅锗材料之间具有在填充源极区域和填充的漏极区域之间的应变通道区域。 电连接耦合到覆盖栅极结构的金属硬掩模。 可选地,该装置具有覆盖金属硬掩模的第二金属层。
    • 100. 发明申请
    • Hammer having vibration absorbing effect
    • 锤具有振动吸收效果
    • US20060037439A1
    • 2006-02-23
    • US10921541
    • 2004-08-19
    • John Chen
    • John Chen
    • B25D1/12
    • B25D1/12
    • A hammer includes a handle, a head mounted on the handle and having a distal end having an end face formed with an insertion recess, and a striking portion mounted on the distal end of the head and having an end face formed with an insertion block inserted into the insertion recess of the head. Thus, the cushioning gap between the striking portion and the head provides a vibration absorbing and cushioning effect during operation of the hammer, so that the hammer is operated smoothly and stably, thereby enhancing the striking effect of the hammer, and thereby facilitating a user operating the hammer.
    • 锤包括手柄,安装在手柄上的头部,具有形成有插入凹部的端面的远端和安装在头部的远端上的敲击部分,并且具有形成有插入插入块的端面 进入头部的插入凹部。 因此,打击部和头部之间的缓冲间隙在锤的操作期间提供振动吸收和缓冲效果,使得锤平稳且稳定地操作,从而提高锤的打击效果,从而便于使用者操作 锤子