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    • 91. 发明授权
    • Power semiconductor device
    • 功率半导体器件
    • US07605426B2
    • 2009-10-20
    • US11933869
    • 2007-11-01
    • Wataru SaitoSyotaro OnoMasakatsu TakashitaYasuto SumiMasaru IzumisawaHiroshi Ohta
    • Wataru SaitoSyotaro OnoMasakatsu TakashitaYasuto SumiMasaru IzumisawaHiroshi Ohta
    • H01L29/76
    • H01L29/7802H01L29/0634H01L29/0696H01L29/1095H01L29/402H01L29/41741H01L29/41766H01L29/7806H01L29/7811H01L29/7813
    • A power semiconductor device includes: a semiconductor substrate; a gate insulating film; a control electrode insulated from the semiconductor substrate by the gate insulating film; a first main electrode provided on a lower surface side of the semiconductor substrate; and a second main electrode provided on an upper surface side of the semiconductor substrate. The semiconductor substrate includes: a first first-conductivity-type semiconductor layer with its lower surface connected to the first main electrode; a second first-conductivity-type semiconductor layer and a third second-conductivity-type semiconductor layer formed on the first first-conductivity-type semiconductor layer and alternately arranged parallel to the upper surface of the semiconductor substrate; a trench formed in a directly overlying region of the third second-conductivity-type semiconductor layer, with part of the second main electrode buried in the trench; a fourth second-conductivity-type semiconductor layer selectively formed in a surface of the second first-conductivity-type semiconductor layer and connected to the second main electrode; a fifth first-conductivity-type semiconductor layer selectively formed in a surface of the fourth second-conductivity-type semiconductor layer and connected to the second main electrode; and a sixth second-conductivity-type semiconductor layer formed at a bottom of the trench and connected to the second main electrode. Impurity concentration in the sixth second-conductivity-type semiconductor layer is higher than impurity concentration in the fourth second-conductivity-type semiconductor layer, and lower surface of the sixth second-conductivity-type semiconductor layer is located below lower surface of the fourth second-conductivity-type semiconductor layer.
    • 功率半导体器件包括:半导体衬底; 栅极绝缘膜; 通过栅极绝缘膜与半导体衬底绝缘的控制电极; 设置在所述半导体基板的下表面侧的第一主电极; 以及设置在半导体衬底的上表面侧的第二主电极。 半导体衬底包括:第一第一导电型半导体层,其下表面连接到第一主电极; 形成在第一第一导电型半导体层上的第二第一导电型半导体层和第三第二导电型半导体层,并且交替地平行于半导体基板的上表面布置; 形成在所述第三第二导电型半导体层的直接覆盖区域中的沟槽,其中所述第二主电极的一部分埋在所述沟槽中; 选择性地形成在所述第二第一导电型半导体层的表面并连接到所述第二主电极的第四第二导电型半导体层; 第五第一导电型半导体层,选择性地形成在所述第四第二导电型半导体层的表面上,并连接到所述第二主电极; 以及形成在所述沟槽的底部并连接到所述第二主电极的第六第二导电型半导体层。 第六第二导电型半导体层中的杂质浓度高于第四第二导电型半导体层中的杂质浓度,第六第二导电型半导体层的下表面位于第四第二导电型半导体层的下表面下方 导电型半导体层。
    • 94. 发明授权
    • Semiconductor substrate and semiconductor device fabrication method
    • 半导体衬底和半导体器件制造方法
    • US07301169B2
    • 2007-11-27
    • US10995539
    • 2004-11-24
    • Sachie ToneHiroshi OhtaMasahiro Ninomiya
    • Sachie ToneHiroshi OhtaMasahiro Ninomiya
    • H01L23/58
    • H01L21/6836H01L23/544H01L24/05H01L2221/68327H01L2221/6834H01L2221/68386H01L2223/54453H01L2224/02166H01L2224/05554H01L2224/05556
    • The semiconductor substrate comprises a first monitor part 14a formed in a first region near a center of a semiconductor wafer 10, which includes a first element having a first electrode 24 formed over the semiconductor wafer 10 with a first insulation film 22 formed therebetween, and a first electrode pad 32 electrically connected to the first electrode 24; and a second monitor part 14b formed in a second region different from the first region, which includes a second element having a second electrode 24 formed on the semiconductor wafer 10 with a second insulation film 22 formed therebetween, and a second electrode pad 32 electrically connected to the second electrode 24. When electric breakdown has taken place in both the first monitor part 14a and the second monitor part 14b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39. When electric breakdown has taken place in either of the first monitor part 14a and the second monitor part 14b, the electric breakdown has taken place due to factors other than the static electricity generated upon the release of the surface protection film. When electric breakdown has taken place in neither of the first monitor part 14a and the second monitor part 14b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39. Thus, factors for defects of semiconductor devices can be identified, which leads to improved quality of the semiconductor devices.
    • 半导体衬底包括形成在半导体晶片10的中心附近的第一区域中的第一监视器部分14a,其包括第一元件,第一元件具有形成在半导体晶片10上的第一电极24,其间形成有第一绝缘膜22;以及 电连接到第一电极24的第一电极焊盘32; 以及形成在与第一区域不同的第二区域中的第二监视器部分14b,其包括第二元件,第二元件具有形成在半导体晶片10上的第二电极24,其间形成有第二绝缘膜22,第二电极焊盘32电连接 连接到第二电极24。 当在第一监视器部分14a和第二监视器部分14b两者中发生电击穿时,可以判断出在释放表面保护膜39时产生太大的静电。 当在第一监视器部分14a和第二监视器部分14b中的任一个中发生电击穿时,由于除了表面保护膜释放后产生的静电以外的因素而发生电击穿。 当在第一监视器部分14a和第二监视器部分14b中都没有发生电击穿时,可以判断出在释放表面保护膜39时产生太大的静电。 因此,可以识别半导体器件缺陷的因素,这导致半导体器件的质量提高。
    • 95. 发明申请
    • Screw compressor
    • 螺杆压缩机
    • US20060280626A1
    • 2006-12-14
    • US11367380
    • 2006-03-06
    • Hitoshi NishimuraTomoo SuzukiHiroshi Ohta
    • Hitoshi NishimuraTomoo SuzukiHiroshi Ohta
    • F04B17/00
    • F04C18/16F01C21/007F04C23/00F04C23/001F04C29/005F04C29/04
    • A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.
    • 一种螺杆压缩机,包括:低压级压缩机体; 高压级压缩机主体,其进一步压缩由所述低压级压缩机主体压缩的压缩空气; 小齿轮分别设置在例如低压级压缩机主体的公转子和例如高压级压缩机主体的公转子上; 电机 大齿轮例如设置在马达的旋转轴上; 以及可旋转地支撑并设有与大齿轮啮合的小齿轮的中间轴和与小齿轮啮合的大齿轮。 由此,可以使电动机的转速相对较低,同时抑制齿轮的直径增大,能够实现成本的降低。
    • 96. 发明授权
    • Object extraction device, object extraction method, and recording media for storing an object extraction program
    • 对象提取装置,对象提取方法以及用于存储对象提取程序的记录介质
    • US06999618B2
    • 2006-02-14
    • US09781280
    • 2001-02-13
    • Hiroshi Ohta
    • Hiroshi Ohta
    • G06K9/00
    • G06T7/97
    • An object extraction device. In an exemplary embodiment, a first object extraction calculating device finds an object extraction image by employing object extraction calculations for extraction of an object by using a predetermined first calculation parameter on photographed images having a parallax with respect to the object. An incorrect outline extraction processor extracts an outline from the object extraction image and extracts an incorrect outline segment from the extracted outline. A recalculated region determining device determines as a recalculated region a partial region that includes the incorrect outline segment. A second object extraction calculating device finds a re-extracted image that includes an object extraction image of the recalculated region, by carrying out an object extraction calculation in order to eliminate the incorrect outline segment in the recalculated region by using a second calculation parameter that is different from the first calculation parameter on the photographed images.
    • 物体提取装置。 在一个示例性实施例中,第一对象提取计算装置通过使用用于提取对象的对象提取计算,通过对具有相对于对象的视差的拍摄图像使用预定的第一计算参数来找到对象提取图像。 错误的轮廓提取处理器从对象提取图像中提取轮廓,并从提取的轮廓中提取不正确的轮廓线段。 重新计算区域确定装置将重新计算的区域确定为包括不正确的轮廓线段的局部区域。 第二对象提取计算装置通过执行对象提取计算来找到包括重新计算区域的对象提取图像的再提取图像,以便通过使用第二计算参数来消除重新计算的区域中的不正确的轮廓段 与拍摄图像上的第一个计算参数不同。
    • 99. 发明授权
    • Apparatus having plural electric double layer capacitors and method for adjusting voltages of the capacitors
    • 具有多个双电层电容器的装置和用于调节电容器电压的方法
    • US06316917B1
    • 2001-11-13
    • US09519852
    • 2000-03-06
    • Hiroshi Ohta
    • Hiroshi Ohta
    • H02J700
    • H02J7/0016B60L11/1866B60L2200/26B60L2240/545B60L2240/547B60L2240/549Y02T10/7005Y02T10/7061
    • An electric double layer capacitor apparatus including a plurality of electric double layer capacitors connected in series, at least one set of a voltage detection device and a discharge device, and a controller. The at least one set is provided to at least one of the plurality of electric double layer capacitors. The voltage detection device is configured to detect a terminal voltage of the at least one of the plurality of electric double layer capacitors. The controller is configured to stop charging the plurality of electric double layer capacitors when the terminal voltage detected by the voltage detection device reaches a maximum charge voltage. The discharge device is configured to discharge the at least one of the plurality of electric double layer capacitors such that said terminal voltage drops toward a predetermined target voltage which is lower than the maximum charge voltage when the terminal voltage is higher than the predetermined target voltage, and the discharge device is configured not to discharge through the load the at least one of the plurality of electric double layer capacitors when the terminal voltage is equal to or lower than the predetermined target voltage.
    • 一种双电层电容器装置,包括串联连接的多个双电层电容器,至少一组电压检测装置和放电装置,以及控制器。 所述至少一个组提供给所述多个双电层电容器中的至少一个。 电压检测装置被配置为检测多个双电层电容器中的至少一个的端子电压。 控制器被配置为当由电压检测装置检测到的端子电压达到最大充电电压时,停止对多个双电层电容器充电。 放电装置被配置为对多个双电层电容器中的至少一个进行放电,使得当端子电压高于预定目标电压时,所述端子电压朝向比最大充电电压低的预定目标电压下降, 并且当所述端子电压等于或低于所述预定目标电压时,所述放电装置被配置为不通过所述负载来放电所述多个双电层电容器中的至少一个。