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91. 发明授权

US5359091A Intermediates for producing enyne derivatives 失效
标题翻译：用于生产烯炔衍生物的中间体
公开(公告)号：US5359091A
公开(公告)日：1994-10-25
申请号：US153956
申请日：1993-11-18
申请人： Susumu Nakagawa , Akira Asai , Satoru Kuroyanagi , Makoto Ishihara , Yoshiharu Tanaka
发明人： Susumu Nakagawa , Akira Asai , Satoru Kuroyanagi , Makoto Ishihara , Yoshiharu Tanaka
IPC分类号： C07D333/16 , B01J31/24 , C07B37/04 , C07B61/00 , C07C209/08 , C07C209/16 , C07C209/22 , C07C209/68 , C07C211/23 , C07C211/24 , C07C211/27 , C07C211/29 , C07C211/30 , C07C211/35 , C07C213/08 , C07C215/24 , C07C215/42 , C07C215/48 , C07C215/50 , C07C217/46 , C07C217/52 , C07C217/56 , C07C217/58 , C07D333/04 , C07D333/20 , C07D333/28 , C07D333/54 , C07D333/58 , C07D333/62 , C07D211/02
CPC分类号： C07D333/62 , C07C209/08 , C07C209/68 , C07C211/24 , C07C211/29 , C07C211/30 , C07C213/08 , C07C215/50 , C07D333/16 , C07D333/20 , Y02P20/55
摘要： A compound of the formula: ##STR1## wherein R.sup.11 is hydrogen, lower alkyl, haloloweralkyl, lower alkenyl, lower alkynyl or cycloalkyl; R.sup.21 is a group of the formula: ##STR2## wherein each of R.sup.3, R.sup.31, and R.sup.32 which may be the same or different, is hydrogen or lower alkyl, each of R.sup.4, R.sup.5, R.sup.41 and R.sup.51, which may be the same or different, is hydrogen, halogen, hydroxyl, lower alkyl or lower alkoxy, R.sup.42 is hydroxyl, halogen, R.sup.8 --O--, or R.sup.6 --X--Y-- wherein R.sup.6 is phenyl or thienyl which may have one or two substituents each of X and Y, which may be the same or different, is oxygen, sulfur, carbonyl, --CHR.sup.8 -- or --NR.sup.b, or X and Y together form a vinylene group or an ethynylene group, provided that when either one of X and Y is oxygen, sulfur or --NR.sup.b, the other is carbonyl or --CHR.sup.a, and R.sup.7 is lower alkyl or cycloalkyl which may be substituted by hydroxy or lower alkoxy, phenyl or tri-lower alkylsilyl; and W is chlorine or bromine.
摘要翻译：下式的化合物：其中R11是氢，低级烷基，卤代低级烷基，低级烯基，低级炔基或环烷基; R21是下式的基团：其中可以相同或不同的R 3，R 31和R 32各自为氢或低级烷基，各自为R 4，R 5，R 41和R 51，氢，卤素，羟基，低级烷基或低级烷氧基，R42是羟基，卤素，R8-O-或R6-XY-，其中R6是可以具有一个或两个取代基的苯基或噻吩基，其可以相同或不同 X和Y各自可以相同或不同，是氧，硫，羰基，-CHR8-或-NRb，或X和Y一起形成亚乙烯基或亚乙炔基，条件是当X和 Y是氧，硫或-NRb，另一个是羰基或-CHRa，并且R 7是可被羟基或低级烷氧基取代的低级烷基或环烷基，苯基或三低级烷基甲硅烷基; W是氯或溴。

92. 发明授权

US5332740A DC-89 derivatives 失效
标题翻译： DC-89衍生物
公开(公告)号：US5332740A
公开(公告)日：1994-07-26
申请号：US46365
申请日：1993-04-13
申请人： Hiromitsu Saito , Satoru Nagamura , Akira Asai , Eiji Kobayashi , Katsushige Gomi
发明人： Hiromitsu Saito , Satoru Nagamura , Akira Asai , Eiji Kobayashi , Katsushige Gomi
IPC分类号： C07D471/04 , A61K31/435 , A61K31/495 , C07D487/04
CPC分类号： C07D471/04
摘要： Novel DC-89 derivatives represented by general formula (I): ##STR1## wherein X represents Cl or Br; R.sup.1 represents hydrogen, CONR.sup.2 R.sup.3 (in which R.sup.2 and R.sup.3 independently represent hydrogen, a straight-chain or branched alkyl group having 1 to 4 carbon atoms or phenyl group), ##STR2## (in which n represents an integer of 4 to 7), ##STR3## (in which R.sup.4 represents oxygen, N--CH.sub.3 or N--CH.sub.2 CH.sub.2 NH.sub.2), ##STR4## (in which R.sup.5 R.sup.6 and R.sup.7 independently represent a straight-chain or branched alkyl group having 1 to 4 carbon atoms); and ##STR5## (in which Y represents hydrogen or CO.sub.2 CH.sub.3); provided that when R.sup.1 is hydrogen, CONR.sup.2 R.sup.3 or SiR.sup.5 R.sup.6 R.sup.7, ##STR6## and pharmaceutically acceptable salts thereof have an excellent anti-tumor activity and are expected to be useful as anti-tumor compositions.
摘要翻译：由通式（I）表示的新型DC-89衍生物：其中X表示Cl或Br; R1表示氢，CONR2R3（其中R2和R3独立地表示氢，具有1至4个碳原子的直链或支链烷基或苯基），其中n表示4至7的整数，（其中R 4表示氧，N-CH 3或N-CH 2 CH 2 NH 2），其中R 5和R 7独立地表示碳原子数1〜4的直链或支链烷基。和其中Y表示氢或CO 2 CH 3）。条件是当R 1是氢时，CONR 2 R 3或SiR 5 R 6 R 7，其药学上可接受的盐具有优异的抗肿瘤活性，并且预期可用作抗肿瘤组合物。

93. 发明授权

US5329895A System for controlling valve shift timing of an engine 失效
标题翻译：用于控制发动机的换挡时间的系统
公开(公告)号：US5329895A
公开(公告)日：1994-07-19
申请号：US127280
申请日：1993-09-27
申请人： Masami Nishida , Toru Kurisu , Takashi Ikai , Hiroaki Sugiura , Hiroshi Enomoto , Masunori Kanda , Eiichi Yanagida , Hiroaki Deguchi , Masaki Fukuma , Akira Asai
发明人： Masami Nishida , Toru Kurisu , Takashi Ikai , Hiroaki Sugiura , Hiroshi Enomoto , Masunori Kanda , Eiichi Yanagida , Hiroaki Deguchi , Masaki Fukuma , Akira Asai
IPC分类号： F01L1/34 , F01L1/344 , F01L13/00 , F01L1/08
CPC分类号： F01L1/34416 , F01L1/34 , F01L13/0042
摘要： An intake valve or an exhaust valve is lifted through a swingable cam by the rotation of a rotatable cam formed in the cam shaft. A surface at which the swingable cam abuts with the rotatable cam is tapered in the axial direction in which said cam shaft extends, and the valve shift timing is changed by transferring the cam shaft, that is, the rotatable cam in the axial direction in which said cam shaft extends. The power transmitting member such as a helical gear to be rotated with the output shaft of the engine is engaged with the cam shaft through a helical spline. The power transmitting member is so arranged as to be unmovable in the axial direction in which said cam shaft extends. The rotational phase of the rotatable cam relative to the output shaft of the engine is changed by displacement of the cam shaft relative to the power transmitting member in the axial direction in which said cam shaft extends.
摘要翻译：进气阀或排气阀通过在凸轮轴上形成的可旋转凸轮的旋转而被提升通过可摆动的凸轮。可摆动凸轮与可旋转凸轮抵接的表面在所述凸轮轴延伸的轴向方向上渐缩，并且通过传递凸轮轴，即沿着轴向方向的可旋转凸轮来改变阀移动正时，其中，所述凸轮轴延伸。诸如与发动机的输出轴一起旋转的斜齿轮的动力传递构件通过螺旋花键与凸轮轴接合。动力传递构件被布置成在所述凸轮轴延伸的轴向方向上不可移动。旋转凸轮相对于发动机的输出轴的旋转相位通过凸轮轴相对于动力传递部件在所述凸轮轴延伸的轴向方向上的位移而改变。

94. 发明授权

US5061794A Cephalosporin derivatives, and antibacterial agents 失效
标题翻译： CEPHALOSPORIN衍生物和抗菌剂
公开(公告)号：US5061794A
公开(公告)日：1991-10-29
申请号：US377086
申请日：1989-07-10
申请人： Susumu Nakagawa , Koji Yamada , Fumio Nakano , Norikazu Otake , Akira Asai , Satoru Kuroyanagi , Yoshiharu Tanaka , Moriaki Ishikawa , Ryosuke Ushijima , Ryuji Mitomo
发明人： Susumu Nakagawa , Koji Yamada , Fumio Nakano , Norikazu Otake , Akira Asai , Satoru Kuroyanagi , Yoshiharu Tanaka , Moriaki Ishikawa , Ryosuke Ushijima , Ryuji Mitomo
IPC分类号： C07D235/28 , C07D263/46 , C07D263/58 , C07D271/10 , C07D271/113 , C07D277/20 , C07D277/36 , C07D277/56 , C07D285/12 , C07D285/125 , C07D501/36
CPC分类号： C07D263/58 , C07D235/28 , C07D263/46 , C07D271/113 , C07D277/36 , C07D277/56 , C07D277/587 , C07D285/125
摘要： A compound having the formula: ##STR1## wherein R is a straight chain or branched chain lower alkyl, cyclic lower alkyl, lower alkenyl (except for 1-carboxy-1-vinyl), lower alkynyl, aralkyl, phenyl or 2-pyrrolidon-3-yl group which may be substituted, and Q is ##STR2## (wherein R.sup.1 is a hydrogen atom or an acetyl group, R.sup.2 is a hydrogen atom, a carboxyl group or a carboxymethyl group, Y is a sulfur atom or an oxygen atom, Z is a sulfur atom, an oxygen atom or an imino group which may be substituted by a lower alkyl group); or a pharmaceutically acceptable salt, physiologically hydrolyzable ester or solvate thereof.
摘要翻译：具有下式的化合物：其中R是直链或支链的低级烷基，环状低级烷基，低级烯基（1-羧基-1-乙烯基），低级炔基，芳烷基，苯基或2 可以被取代的吡咯烷酮-3-基，Q是氢原子或乙酰基，R2是氢原子，羧基或羧甲基， Y是硫原子或氧原子，Z是硫原子，氧原子或可被低级烷基取代的亚氨基）; 或其药学上可接受的盐，生理上可水解的酯或其溶剂合物。

95. 发明授权

US4299503A Character selection mechanism for a typewriter 失效
标题翻译：打字机的字符选择机制
公开(公告)号：US4299503A
公开(公告)日：1981-11-10
申请号：US65145
申请日：1979-08-07
申请人： Tomoyoshi Watanabe , Toshio Nakai , Susumu Kuzuya , Hiroshi Onoda , Akira Asai , Takayuki Iwase , Kazuo Nakamura
发明人： Tomoyoshi Watanabe , Toshio Nakai , Susumu Kuzuya , Hiroshi Onoda , Akira Asai , Takayuki Iwase , Kazuo Nakamura
IPC分类号： B41J1/60 , B41J7/34 , B41J7/52
CPC分类号： B41J7/34 , B41J1/60
摘要： A character selection mechanism for a typewriter having a single type head with characters arranged in rows and columns thereon, which mechanism comprises, for either row selection and column selection similarly, a series of cams, a series of cam followers, a series of transmitting members, and an output member, as one set. The cams are fixed on a cam shaft which is rotated once in response to depressing of any one key. Each of the cam followers is rotated by each corresponding cam and is shifted, against a biasing force, by each corresponding transmitting member from a first position to a second position in response to depressing of the corresponding key. The cam follower engages the output member at the second position for controlling its operation based on the rotation of the cam shaft. The output member is connected to the type head via a connecting mechanism.
摘要翻译：一种用于打字机的字符选择机构，其具有以行和列排列的字符的单一类型的头部，该机构包括用于行选择和列选择的一系列凸轮，一系列凸轮从动件，一系列传动构件，以及输出部件。凸轮固定在凸轮轴上，凸轮轴响应于任何一个键的按压而旋转一次。每个凸轮从动件由每个对应的凸轮旋转，并且响应于对应的键的按压，由每个对应的传动构件抵抗偏置力从第一位置移动到第二位置。凸轮从动件在第二位置处接合输出构件，用于基于凸轮轴的旋转来控制其操作。输出构件通过连接机构连接到型头。

96. 发明申请

US20110172429A1 STAT3 INHIBITOR CONTAINING QUINOLINECARBOXAMIDE DERIVATIVE AS ACTIVE INGREDIENT 有权
标题翻译：含有喹啉甲酰胺衍生物的STAT3抑制剂作为活性成分
公开(公告)号：US20110172429A1
公开(公告)日：2011-07-14
申请号：US13003441
申请日：2009-07-10
申请人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Takane Yokotagawa , Osamu Takahashi , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
发明人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Takane Yokotagawa , Osamu Takahashi , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
IPC分类号： C07D215/14
CPC分类号： C07D401/12 , A61K31/4709 , C07D413/12 , C07D413/14 , C07D417/12 , C07D417/14
摘要： The present invention provides a STATS inhibitor containing as an active ingredient, a quinolinecarboxamide derivative represented by the formula (I) (in the formula, W represents a bond or an alkylene chain; X represents O, S, or NR34; and R1 to R8 and R34 each represent H, halogen, alkyl, phenyl, furyl, thienyl, or the like.), or a pharmacologically acceptable salt thereof.
摘要翻译：本发明提供含有作为活性成分的式（I）所示的喹啉甲酰胺衍生物的STATS抑制剂（式中，W表示键或亚烷基链; X表示O，S或NR34; R1〜R8 和R 34各自表示H，卤素，烷基，苯基，呋喃基，噻吩基等）或其药理学上可接受的盐。

97. 发明授权

US07516054B2 Method and apparatus for numerical calculation related to fluids, program for implementing the method, and storage medium storing the program 失效
标题翻译：与流体相关的数值计算方法和装置，实现该方法的程序和存储程序的存储介质
公开(公告)号：US07516054B2
公开(公告)日：2009-04-07
申请号：US10887849
申请日：2004-07-12
申请人： Koichi Tanji , Akira Asai
发明人： Koichi Tanji , Akira Asai
IPC分类号： G06G7/50
CPC分类号： G06F17/5018 , G06F2217/16
摘要： A method for numerical calculation related to fluids which is efficient and less liable to cause numerical diffusion and does not rely upon the functional form of an equation of state and hence can be used as a generalized numerical calculation method. A flux is divided into an advection part, a pressure-dependent part, and a dissipation part, according to physical properties thereof, to calculate a one-dimensional basic equation. A time evolution is executed on the advection part and the pressure-dependent part using an upwind difference type leap-frog difference method and a central difference type leap-frog difference method, respectively.
摘要翻译：一种与有效且不易引起数值扩散的流体相关的数值计算方法，不依赖于状态方程的函数形式，因此可用作广义数值计算方法。根据其物理性质，将焊剂分为平流部分，压力依赖部分和耗散部分，以计算一维基本方程。在平流部分和压力依赖部分上使用逆风差分型跨越差分法和中心差分型跨越式差异法进行时间演化。

98. 发明授权

US07145168B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07145168B2
公开(公告)日：2006-12-05
申请号：US10997127
申请日：2004-11-24
申请人： Yoshihiro Hara , Akira Asai , Gaku Sugahara , Haruyuki Sorada , Teruhito Ohnishi
发明人： Yoshihiro Hara , Akira Asai , Gaku Sugahara , Haruyuki Sorada , Teruhito Ohnishi
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/1054 , H01L21/76224 , H01L21/823481 , Y10S438/933
摘要： On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.
摘要翻译：在Si衬底1上形成缓冲层2，SiGe层3和Si覆盖层4。在基板上形成掩模，然后对基板进行图案化。以这种方式，形成沟槽7a以到达Si衬底1并且暴露SiGe层3的侧面。然后，将沟槽7a的表面在750℃下进行1小时的热处理，使得包含在SiGe层3的表面部分中的Ge蒸发。因此，在沟槽7a的一部分暴露的SiGe层3的一部分，形成Ge含量低于SiGe层3的Ge含量低的Ge蒸发部分8。此后，沟槽7a的壁被氧化。

99. 发明授权

US07126170B2 MISFET for reducing leakage current 失效
标题翻译：用于减少漏电流的MISFET
公开(公告)号：US07126170B2
公开(公告)日：2006-10-24
申请号：US10978513
申请日：2004-11-02
申请人： Akira Inoue , Takeshi Takagi , Akira Asai , Haruyuki Sorada
发明人： Akira Inoue , Takeshi Takagi , Akira Asai , Haruyuki Sorada
IPC分类号： H01L31/0336
CPC分类号： H01L21/28123 , H01L29/1054 , H01L29/1087 , H01L29/4238 , H01L29/66651 , H01L29/783
摘要： A MISFET according to this invention includes: a substrate having a semiconductor layer; an active region formed in the semiconductor layer; a gate insulator formed on the active region; a gate formed on the gate insulator; and a source region and a drain region, wherein: the active region is formed, in plan view, to have a body portion and a projecting portion projecting from a periphery of the body portion; the gate is formed, in plan view, to intersect the body portion of the active region, cover a pair of connecting portions connecting a periphery of the projecting portion to the periphery of the body portion and allow a part of the projecting portion to project from a periphery of the gate; and the source region and the drain region are formed in regions of the body portion of the active region which are situated on opposite sides of the gate in plan view, respectively.
摘要翻译：根据本发明的MISFET包括：具有半导体层的衬底; 形成在半导体层中的有源区; 形成在有源区上的栅极绝缘体; 形成在栅极绝缘体上的栅极; 源极区域和漏极区域，其中：有源区域在平面图中形成为具有从主体部分的周边突出的主体部分和突出部分; 在平面图中，门形成为与有源区域的主体部分相交，覆盖将突出部分的周边连接到主体部分的周边的一对连接部分，并使突出部分的一部分从门的周边; 并且源极区域和漏极区域分别形成在有源区域的主体部分的位于平面图的栅极的相对侧上的区域中。

100. 发明申请

US20060225642A1 Method of forming semiconductor crystal 审中-公开
标题翻译：形成半导体晶体的方法
公开(公告)号：US20060225642A1
公开(公告)日：2006-10-12
申请号：US10402239
申请日：2003-03-31
申请人： Yoshihiko Kanzawa , Tohru Saitoh , Akira Asai , Teruhito Ohnishi
发明人： Yoshihiko Kanzawa , Tohru Saitoh , Akira Asai , Teruhito Ohnishi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/04 , C30B25/18 , C30B29/52 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661 , H01L29/1054
摘要： A method of forming semiconductor crystal of the present invention comprises the steps of heating a Si substrate to clean a surface of the Si substrate, epitaxially growing Si crystal on the Si substrate inside a crystal growth chamber at a growth temperature lower than a substrate temperature of the Si substrate in the cleaning step and higher than a growth temperature at which SiGe crystal is epitaxially grown later, and epitaxially growing the SiGe crystal on the Si crystal.
摘要翻译：本发明的半导体晶体的形成方法包括以下步骤：加热Si衬底以清洁Si衬底的表面，在晶体生长室内的Si衬底上外延生长Si晶体，生长温度低于衬底温度 Si衬底在高于SiGe晶体后来生长的生长温度以及在Si晶体上外延生长SiGe晶体。

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