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91. 发明授权

US07759332B2 Cytotropic heterogeneous molecular lipids (CHML), method of preparation, and methods of treating patients with multiple cancers 有权
标题翻译：细胞向异质分子脂质（CHML），制备方法和治疗多发癌症患者的方法
公开(公告)号：US07759332B2
公开(公告)日：2010-07-20
申请号：US11882758
申请日：2007-08-03
申请人： Zheng Xu
发明人： Zheng Xu
IPC分类号： A61K45/00 , A61K9/127 , A61K31/355 , A61K31/20 , A01N37/00 , A01N43/00 , A01N37/08
CPC分类号： A61K36/00 , A61K31/07 , A61K31/20 , A61K31/201 , A61K31/202 , A61K31/355 , A61K45/06 , A61K2300/00
摘要： Cytotropic Heterogeneous Molecular Lipids (CHML) are used to treat patients with multiple cancers. Numerous studies have been conducted in cellular, animal, pre-clinical and clinical trials. Results showed that CHML, as a biological molecular missile, can easily penetrate through the target cancerous cells to perform programmed cancer cell death (cancer apoptosis). Furthermore, CHML has produced anti-cancer angiogenesis and induced immune function increase. CHML was used to treat 592 patients with cancers in clinical trials. Results confirmed the following advantages of CHML treatment: non-toxicity, high response rate, high quality of life, and high survival rate for these patients. The protocols include local injection, arterial drip and intravenous drip to treat cancers of liver, lung, skin, breast, brain glioma, colon and rectum, stomach, head and neck, leukemia, malignant lymphoma, sarcoma, malignant melanoma, myeloma, and metastasis cancers, etc.
摘要翻译：细胞向异质分子脂质（CHML）用于治疗多发性癌症患者。在细胞，动物，临床前和临床试验中进行了许多研究。结果表明，CHML作为生物分子导弹，可以很容易地穿透目标癌细胞，进行程序性癌细胞死亡（癌细胞凋亡）。此外，CHML已经产生抗癌血管发生和诱导的免疫功能增加。 CHML用于临床试验治疗592例癌症患者。结果证实，CHML治疗具有以下优点：无毒，反应率高，生活质量好，生存率高。方案包括局部注射，动脉滴注和静脉滴注以治疗肝，肺，皮肤，乳腺，脑胶质瘤，结肠和直肠，胃，头颈部，白血病，恶性淋巴瘤，肉瘤，恶性黑素瘤，骨髓瘤和转移癌癌症等

92. 发明授权

US07688656B2 Integrated circuit memory having dynamically adjustable read margin and method therefor 有权
标题翻译：集成电路存储器具有动态可调的读取余量及其方法
公开(公告)号：US07688656B2
公开(公告)日：2010-03-30
申请号：US11875997
申请日：2007-10-22
申请人： Shayan Zhang , Hema Ramamurthy , Zheng Xu , Michael D. Snyder
发明人： Shayan Zhang , Hema Ramamurthy , Zheng Xu , Michael D. Snyder
IPC分类号： G11C29/00
CPC分类号： G11C29/02 , G11C11/41 , G11C29/026 , G11C29/028 , G11C2029/0409
摘要： A method for dynamically controlling sense amplifier differential margin of a memory during operation, in an integrated circuit, including a plurality of addressable units, is provided. The method includes setting the sense amplifier differential margin corresponding to the plurality of addressable units to a first value. The method further includes if a read data error occurs when data is read from a set of the plurality of addressable units, then setting the sense amplifier differential margin corresponding to the plurality of addressable units to a second value, wherein the second value is greater than the first value.
摘要翻译：提供了一种用于在包括多个可寻址单元的集成电路中在操作期间动态地控制存储器的读出放大器差分裕度的方法。该方法包括将与多个可寻址单元相对应的读出放大器差分裕度设置为第一值。该方法还包括如果当从多个可寻址单元的集合读取数据时发生读取数据错误，则将与多个可寻址单元相对应的读出放大器差分裕度设置为第二值，其中第二值大于第一个值。

93. 发明申请

US20090302952A1 Systems And Methods For Distributing A Clock Signal 有权
标题翻译：用于分配时钟信号的系统和方法
公开(公告)号：US20090302952A1
公开(公告)日：2009-12-10
申请号：US12159750
申请日：2006-12-29
申请人： Steven Chan , Kenneth L. Shepard , Zheng Xu
发明人： Steven Chan , Kenneth L. Shepard , Zheng Xu
IPC分类号： H03B5/12
CPC分类号： G06F1/00 , G06F1/10 , H03L5/00 , H03L7/081 , H03L7/087 , H03L7/24
摘要： Systems and methods for distributing a clock signal are disclosed. In some embodiments, systems for distributing a clock signal include a plurality of resonant oscillators, each comprising an inductor; and a differential clock grid that distributes the clock signal. The differential clock grid is coupled to the plurality of resonant oscillators and the clock signal, and the inductances of the inductors are configured such that a resonant frequency of the plurality of resonant oscillators is substantially equal to the frequency of the clock signal.
摘要翻译：公开了用于分配时钟信号的系统和方法。在一些实施例中，用于分配时钟信号的系统包括多个谐振振荡器，每个谐振振荡器包括电感器; 以及分配时钟信号的差分时钟网格。差分时钟网格耦合到多个谐振振荡器和时钟信号，并且电感器的电感被配置为使得多个谐振振荡器的谐振频率基本上等于时钟信号的频率。

94. 发明申请

US20080241356A1 PHOTOVOLTAIC DEVICES MANUFACTURED USING CRYSTALLINE SILICON THIN FILMS ON GLASS 审中-公开
标题翻译：玻璃上使用晶体硅薄膜制造的光伏器件
公开(公告)号：US20080241356A1
公开(公告)日：2008-10-02
申请号：US11766979
申请日：2007-06-22
申请人： Jianming Fu , Zheng Xu
发明人： Jianming Fu , Zheng Xu
IPC分类号： B05D5/12
CPC分类号： C03C17/36 , C03C17/3626 , C03C17/3636 , C03C17/3678 , H01L31/0465 , Y02E10/50
摘要： A method for fabricating an array of interconnected photovoltaic cells on a single substrate is disclosed. A silicon nitride (SiNx) layer is deposited onto a glass substrate for use as both a diffusion barrier and as an anti-reflection coating (ARC); an n+ Si layer is deposited as a front electrode and as a wetting layer for subsequent coating with a crystalline Si layer by liquid phase deposition (LPD); a first laser scribing is performed to separate the n+ Si layer into stripes; stripes of crystalline Si are deposited onto the first n+ Si layer, with a small offset, wherein each stripe of crystalline Si covers a majority of one stripe of n+ layer underneath, and also covers an edge portion of a neighboring stripe of n+ layer; a p+ a-Si layer is deposited; an Al layer is deposited for use as both an electrode and as a back-reflector; and the Al and p+ Si layers are divided into stripes to form spaced, isolated solar cells. In this way, a p-i-n photovoltaic cell is formed for each stripe of said device in which the photovoltaic cells are series connected.
摘要翻译：公开了一种用于在单个衬底上制造互连的光伏电池阵列的方法。将氮化硅（SiNx）层沉积在用作扩散阻挡层和抗反射涂层（ARC）的玻璃基板上。沉积n + S层作为前电极和作为润湿层，随后通过液相沉积（LPD）涂覆晶体Si层; 执行第一激光划线以将n + S + Si层分离成条纹; 晶体Si的条纹沉积在第一n + S + Si层上，具有小的偏移，其中每条晶体Si覆盖下面的n + 1 + 并且还覆盖相邻条纹的n + +层的边缘部分; 沉积a + Si层; 沉积Al层用作电极和背反射器; 并且将Al和p + Si层分成条纹以形成间隔开的隔离的太阳能电池。以这种方式，对于其中光伏电池串联连接的所述器件的每个条形成p-i-n光伏电池。

95. 发明申请

US20080198808A1 SYSTEM AND METHOD FOR PERFORMING HANDOVER IN WiMAX MOBILE COMMUNICATION SYSTEM 有权
标题翻译：用于在WiMAX移动通信系统中执行切换的系统和方法
公开(公告)号：US20080198808A1
公开(公告)日：2008-08-21
申请号：US12034706
申请日：2008-02-21
申请人： Seong-Taek HWANG , Shuangfeng Han , Chunhui Zhou , Jing Wang , Ming Zhao , Zheng Xu
发明人： Seong-Taek HWANG , Shuangfeng Han , Chunhui Zhou , Jing Wang , Ming Zhao , Zheng Xu
IPC分类号： H04Q7/00
CPC分类号： H04W36/06 , H04W88/085
摘要： Disclosed is a system and a method for performing handover in a Worldwide interoperability for Microwave Access (WiMAX) mobile communication system supporting broadband wireless access. The system includes a plurality of Mobile Stations (MSs); at least one distributed antenna having the ability to perform simultaneous communications with the plurality of MSs; and a base station connected to the at least one distributed antenna through optical fibers for performing communications and handovers with the multiple MSs.
摘要翻译：公开了一种在支持宽带无线接入的全球微波接入（WiMAX）移动通信系统互操作性中进行切换的系统和方法。该系统包括多个移动站（MS）; 至少一个具有与所述多个MS同时通信的能力的分布式天线; 以及通过光纤连接到所述至少一个分布式天线的基站，用于执行与所述多个MS的通信和切换。

96. 发明申请

US20070178682A1 Damage-free sculptured coating deposition 审中-公开
标题翻译：无损伤雕刻涂层沉积
公开(公告)号：US20070178682A1
公开(公告)日：2007-08-02
申请号：US11733671
申请日：2007-04-10
申请人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen Chen , Barry Chin , Gene Kohara , Zheng Xu , Hong Zhang
发明人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen Chen , Barry Chin , Gene Kohara , Zheng Xu , Hong Zhang
IPC分类号： H01L21/20
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883
摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, said method comprising the steps of: a) applying a first portion of a sculptured layer with sufficiently low substrate bias that a surface onto which said sculptured layer is applied is not eroded away or contaminated in an amount which is harmful to said semiconductor device performance or longevity; and b) applying a subsequent portion of said sculptured layer with sufficiently high substrate bias to sculpture a shape from said the first portion, while depositing additional layer material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces and is especially helpful when the conductive layer is copper. In the application of a barrier layer, a first portion of barrier layer material is deposited on the substrate surface using standard sputtering techniques or using an ion deposition plasma, but in combination with sufficiently low substrate bias voltage (including at no applied substrate voltage) that the surfaces impacted by ions are not sputtered in an amount which is harmful to device performance or longevity. Subsequently, a second portion of barrier material is applied using ion deposition sputtering at increased substrate bias voltage which causes resputtering (sculpturing) of the first portion of barrier layer material, while enabling a more anisotropic deposition of newly depositing material. A conductive material, and particularly a copper seed layer applied to the feature may be accomplished using the same sculpturing technique as that described above with reference to the barrier layer.
摘要翻译：我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻层的材料的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染，所述方法包括步骤：a）以足够低的衬底偏压施加雕刻层的第一部分，使得施加所述雕刻层的表面不会以对所述半导体器件的性能或寿命有害的量被侵蚀或污染; 以及b）将所述雕刻层的后续部分施加足够高的衬底偏压，以从所述第一部分雕刻形状，同时沉积附加层材料。该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层，并且当导电层是铜时尤其有用。在施加阻挡层时，使用标准溅射技术或使用离子沉积等离子体将阻挡层材料的第一部分沉积在衬底表面上，但是与足够低的衬底偏置电压（包括没有施加的衬底电压）组合，受离子影响的表面不会以对器件性能或寿命有害的量溅射。随后，使用离子沉积溅射在增加的衬底偏置电压下施加阻挡材料的第二部分，这导致阻挡层材料的第一部分的再溅射（雕刻），同时能够进行更多的各向异性沉积新沉积的材料。应用于特征的导电材料，特别是铜种子层可以使用与上述参考阻挡层所述相同的雕刻技术来实现。

97. 发明授权

US07025971B2 Treatment or prophylaxis of diseases caused by pilus-forming bacteria 失效
公开(公告)号：US07025971B2
公开(公告)日：2006-04-11
申请号：US09798932
申请日：2001-03-06
申请人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
发明人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
IPC分类号： A61K39/10 , A61K39/02 , A61K39/108 , G01N33/569
CPC分类号： A61K31/7004 , A61K31/00 , A61K31/70 , C07H1/00 , G01N33/68 , G01N2333/195 , G01N2500/10 , G01N2500/20 , Y02A50/481 , Y10S435/849
摘要： Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminished. Also disclosed are methods for screening for drugs as well as methods for the de novo design of such drugs, methods which rely on novel computer drug modelling methods involving an approximative calculation of binding free energy between macromolecules. Finally, novel pyranosides which are believed to be capable of interacting with periplasmic molecular chaperones are also disclosed.

98. 发明申请

US20060030151A1 Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement 有权
标题翻译：金属化种子层的溅射沉积和蚀刻用于悬垂和侧壁改进
公开(公告)号：US20060030151A1
公开(公告)日：2006-02-09
申请号：US10915139
申请日：2004-08-09
申请人： Peijun Ding , Fuhong Zhang , Hsien-Lung Yang , Michael Miller , Jianming Fu , Jick Yu , Zheng Xu , Fusen Chen
发明人： Peijun Ding , Fuhong Zhang , Hsien-Lung Yang , Michael Miller , Jianming Fu , Jick Yu , Zheng Xu , Fusen Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.
摘要翻译：一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

99. 发明授权

US06872542B1 Treatment or prophylaxis of diseases caused by pilus-forming bacteria 失效
标题翻译：治疗或预防由菌毛形成细菌引起的疾病
公开(公告)号：US06872542B1
公开(公告)日：2005-03-29
申请号：US09799584
申请日：2001-03-07
申请人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
发明人： Scott Hultgren , Meta Kuehn , Zheng Xu , Derek Ogg , Mark Harris , Matti Lepisto , Charles Hal Jones , Jan Kihlberg
IPC分类号： A61K31/00 , A61K31/70 , C07H1/00 , G01N33/68 , G01N33/554 , A61K39/38 , A61K39/395 , A61K39/40 , A61K49/00
CPC分类号： G01N33/68 , A61K31/00 , A61K31/70 , A61K31/7004 , C07H1/00 , G01N2333/195 , G01N2500/10 , G01N2500/20
摘要： Novel methods for the treatment and/or prophylaxis of diseases caused by tissue-adhering bacteria are disclosed. By interacting with periplasmic molecular chaperones it is achieved that the assembly of pili is prevented or inhibited and thereby the infectivity of the bacteria is diminished. Also disclosed are methods for screening for drugs as well as methods for the de novo design of such drugs, methods which rely on novel computer drug modelling methods involving an approximative calculation of binding free energy between macromolecules. Finally, novel pyranosides which are believed to be capable of interacting with periplasmic molecular chaperones are also disclosed.
摘要翻译：公开了用于治疗和/或预防由组织粘附细菌引起的疾病的新方法。通过与周质分子伴侣相互作用，可以防止或抑制毛细血管的组装，从而减少细菌的感染性。还公开了用于筛选药物的方法以及用于从头设计这些药物的方法，这些方法依赖于涉及大分子之间的结合自由能的近似计算的新型计算机药物建模方法。最后，还公开了被认为能够与周质分子伴侣相互作用的新型吡喃糖苷。

100. 发明申请

US20050020080A1 Method of depositing a diffusion barrier layer and a metal conductive layer 审中-公开
标题翻译：沉积扩散阻挡层和金属导电层的方法
公开(公告)号：US20050020080A1
公开(公告)日：2005-01-27
申请号：US10922052
申请日：2004-08-18
申请人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen Chen , Barry Chin , Gene Kohara , Zheng Xu , Hong Zhang
发明人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen Chen , Barry Chin , Gene Kohara , Zheng Xu , Hong Zhang
IPC分类号： H01L21/285 , H01L21/768 , H01L21/4763 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883
摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, said method comprising the steps of: a) applying a first portion of a sculptured layer with sufficiently low substrate bias that a surface onto which said sculptured layer is applied is not eroded away or contaminated in an amount which is harmful to said semiconductor device performance or longevity; and b) applying a subsequent portion of said sculptured layer with sufficiently high substrate bias to sculpture a shape from said the first portion, while depositing additional layer material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces and is especially helpful when the conductive layer is copper. In the application of a barrier layer, a first portion of barrier layer material is deposited on the substrate surface using standard sputtering techniques or using all ion deposition plasma, but in combination with sufficiently low substrate bias voltage (including at no applied substrate voltage) that the surfaces impacted by ions are not sputtered in an amount which is harmful to device performance or longevity. Subsequently, a second portion of barrier material is applied using ion deposition sputtering at increased substrate bias voltage which causes resputtering (sculpturing) or the first portion of barrier layer material, while enabling a more anisotropic deposition of newly depositing material. A conductive material, and particularly a copper seed layer applied to the feature may be accomplished using the same sculpturing technique as that described above with reference to the barrier layer.
摘要翻译：我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻层的材料的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染，所述方法包括步骤：a）以足够低的衬底偏压施加雕刻层的第一部分，使得施加所述雕刻层的表面不会以对所述半导体器件的性能或寿命有害的量被侵蚀或污染; 以及b）将所述雕刻层的后续部分施加足够高的衬底偏压，以从所述第一部分雕刻形状，同时沉积附加层材料。该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层，并且当导电层是铜时尤其有用。在施加阻挡层时，使用标准溅射技术或使用所有离子沉积等离子体将阻挡层材料的第一部分沉积在衬底表面上，但是与足够低的衬底偏置电压（包括没有施加的衬底电压）相结合，受离子影响的表面不会以对器件性能或寿命有害的量溅射。随后，使用离子沉积溅射以增加的衬底偏置电压施加阻挡材料的第二部分，其引起再溅射（雕刻）或阻挡层材料的第一部分，同时能够进行更多的各向异性沉积新沉积材料。应用于特征的导电材料，特别是铜种子层可以使用与上述参考阻挡层所述相同的雕刻技术来实现。

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