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    • 91. 发明公开
    • 웨이퍼 폴리싱용 실리카 슬러리의 제조 방법
    • 用于生产用于抛光抛光的二氧化硅浆料的方法
    • KR1020010019612A
    • 2001-03-15
    • KR1019990036126
    • 1999-08-28
    • 한국과학기술원
    • 소재현오민호배선혁양승만김도현
    • H01L21/304
    • C09K3/1463C01B33/126C09G1/02
    • PURPOSE: A method for producing silica slurry for a wafer polishing is provided by silica grains having a relatively higher weight percent and made economically. CONSTITUTION: A method producing silica slurry includes a step of growing spherical silica grains having uniform size distribution. Here, thermally decomposed silica grains or colloid silica grains are used as growing seeds, and hydrolysis and condensation polymerization reactions of tetraethylorthosilicate(TEOS) are made under a base atmosphere. The grown silica grains are then dispersed into a water solution substituted for alcoholic solvent as dispersion media by using a vacuum evaporator and a centrifugal separator. In addition, the silica grains are treated with heat in an autoclave for one or two hours. This method can provide silica grains of required size by controlling amount of reactant and using various-sized growing seeds.
    • 目的:用于制造用于晶片抛光的二氧化硅浆料的方法由具有相对较高重量百分数并经济地制备的二氧化硅颗粒提供。 构成:生产二氧化硅浆料的方法包括生长具有均匀尺寸分布的球形二氧化硅颗粒的步骤。 这里,使用热分解的二氧化硅颗粒或胶体二氧化硅颗粒作为生长种子,在基础气氛下制备原硅酸四乙酯(TEOS)的水解和缩聚反应。 然后通过使用真空蒸发器和离心分离器将生长的二氧化硅颗粒分散在取代醇溶剂作为分散介质的水溶液中。 此外,二氧化硅颗粒在高压釜中加热处理1或2小时。 该方法可以通过控制反应物的量并使用各种尺寸的生长种子来提供所需尺寸的二氧化硅颗粒。