专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

KR100512005B1 이온주입된 웨이퍼의 오염 탐지 방법 및 장치 失效
标题翻译：用于检测离子膜中的污染的方法和装置
公开(公告)号：KR100512005B1
公开(公告)日：2005-09-02
申请号：KR1020020074663
申请日：2002-11-28
申请人： 삼성전자주식회사
发明人： 양유신 , 전상문 , 최선용 , 전충삼 , 류관우 , 김박송 , 엄태민
IPC分类号： H01L21/66
CPC分类号： G01N25/72
摘要： 이온주입된 웨이퍼에 함께 주입된 오염물질을 탐지하는 방법 및 장치를 개시한다. 먼저, 이온주입된 비정질 웨이퍼를 어닐링하여 결정질 웨이퍼로 전환시킨다. 그런 다음, 결정질 웨이퍼에 열 또는 전하를 인가하여 활성화시킨다. 마지막으로, 활성화된 웨이퍼에 대해서 열파형을 측정하여, 오염물질을 탐지한다. 이와 같이, 어닐링된 결정질 웨이퍼에 열 또는 전하를 인가하여 활성화시키고, 이와 같이 활성화된 웨이퍼에 대해서 열파형 측정이 실시됨으로써, 적은 오염도가 정확하게 탐지할 수가 있게 된다.

92. 发明公开

KR1020050015065A 결함 검사 방법 및 결함 검사 장치 失效
标题翻译：用于检查缺陷检测缺陷检测和减少检查时间精度的设备和方法
公开(公告)号：KR1020050015065A
公开(公告)日：2005-02-21
申请号：KR1020030053537
申请日：2003-08-01
申请人： 삼성전자주식회사
发明人： 김정수 , 양유신 , 김문경 , 전상문 , 최선용 , 전충삼
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/55
摘要： PURPOSE: An apparatus and a method for inspecting defects are provided to improve accuracy in defect inspection and reduce inspection time by calculating an optimal amplification ratio based on regional characteristics on an object to be inspected. CONSTITUTION: An apparatus for inspecting defects includes a stage(140), a light emitter(110), a detector(130), a controller(160), and a determiner(170). The stage supports and transfers an object to be inspected. The light emitter is apart from the stage by a predetermined distance and sequentially illuminates a light to at least two regions on the object to be inspected. The detector collects the light reflected from the object to be inspected and amplifies the collected light by an amplification ratio. The controller varies the amplification ratio according to regional characteristics corresponding to a variance of the amplified light. The determiner analyzes the amplified light and determines an error on the object to be inspected.
摘要翻译：目的：提供一种用于检查缺陷的装置和方法，以通过基于待检查对象的区域特性计算最佳放大率来提高缺陷检查的精度并减少检查时间。构成：用于检查缺陷的装置包括级（140），发光器（110），检测器（130），控制器（160）和确定器（170）。舞台支持和传送要检查的对象。光发射器与舞台分开预定距离，并且顺序地将光照射到待检查对象上的至少两个区域。检测器收集从被检查物体反射的光并以放大率放大收集的光。控制器根据对应于放大光的方差的区域特性来改变放大率。确定器分析放大的光并确定待检查对象的错误。

93. 发明公开

KR1020050014421A 포토리소그래피 공정 모니터링 방법과 장치 有权
标题翻译：用于预测光刻过程的方法和装置，以及用于监测光刻方法的方法和装置，以便确定异常光刻过程的可能性，并且实时检查在半导体基板上形成的光电子图案的不正常性
公开(公告)号：KR1020050014421A
公开(公告)日：2005-02-07
申请号：KR1020030053055
申请日：2003-07-31
申请人： 삼성전자주식회사
发明人： 양유신 , 전충삼 , 전상문 , 최선용
IPC分类号： H01L21/027
CPC分类号： G03F7/70608 , G03F7/70616
摘要： PURPOSE: An apparatus for predicting a photolithography process is provided to previously determine the possibility of an abnormal photolithography process and check abnormality of a photoresist pattern formed on a semiconductor substrate in real time by using reflectivity of an ARC(anti-reflective coating) formed on the semiconductor substrate. CONSTITUTION: Before a photolithography process is performed, an optical characteristic measuring part(110) measures an optical characteristic of a semiconductor substrate to determine the possibility of abnormality of the semiconductor substrate in the photolithography process. A data process part(130) determines the possibility of abnormality of the semiconductor substrate by using the result of the measurement data of the optical characteristic measured by the optical characteristic measuring part.
摘要翻译：目的：提供一种用于预测光刻工艺的装置，以通过使用形成在半导体衬底上的ARC（抗反射涂层）的反射率来预先确定异常光刻处理的可能性并且实时地检查形成在半导体衬底上的光致抗蚀剂图案的异常半导体衬底。构成：在执行光刻处理之前，光学特性测量部分（110）测量半导体衬底的光学特性，以确定在光刻工艺中半导体衬底异常的可能性。数据处理部（130）通过使用由光学特性测量部测量的光学特性的测量数据的结果来确定半导体衬底的异常的可能性。

94. 发明公开

KR1020050003101A 웨이퍼의 표면 검사 방법 및 장치 有权
标题翻译：通过使用波形位置信息来校正波浪位置来检测波形表面以执行精确的表面检测过程的方法和装置
公开(公告)号：KR1020050003101A
公开(公告)日：2005-01-10
申请号：KR1020030043232
申请日：2003-06-30
申请人： 삼성전자주식회사
发明人： 엄태민 , 양유신 , 전충삼 , 지윤정 , 김정수 , 김문경 , 전상문 , 최선용
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/55 , G01N2021/556
摘要： PURPOSE: A method and an apparatus of inspecting a surface of a wafer is provided to perform an accurate surface inspection process by using wafer location information to correct a location of the wafer. CONSTITUTION: A wafer is loaded into a surface inspection region(S100). Incident rays including a first incident ray for sensing a vertical location of the wafer and a second incident ray for inspecting a surface of the wafer are irradiated on the wafer(S200). The location of the wafer is controlled by detecting the first incident ray reflected from the wafer(S300). The surface of the wafer is inspected by detecting the second incident ray scattered by the wafer(S400).
摘要翻译：目的：提供一种检查晶片表面的方法和装置，以通过使用晶片位置信息来校正晶片的位置来执行精确的表面检查处理。构成：将晶片装入表面检查区域（S100）。包括用于感测晶片的垂直位置的第一入射光线和用于检查晶片表面的第二入射光线的入射光线照射在晶片上（S200）。通过检测从晶片反射的第一入射光来控制晶片的位置（S300）。通过检测由晶片散射的第二入射光来检查晶片的表面（S400）。

95. 发明授权

KR100456527B1 마란고니 효과를 증대시키기 위한 건조 장비 및 건조 방법 失效
标题翻译： 마란고니효과를증대시키기위한건조장비및건조방
公开(公告)号：KR100456527B1
公开(公告)日：2004-11-09
申请号：KR1020010078159
申请日：2001-12-11
申请人： 삼성전자주식회사
发明人： 이헌정 , 김경대 , 전상문 , 이기석 , 이보용 , 박상오 , 전필권
IPC分类号： H01L21/304
CPC分类号： H01L21/67034
摘要： A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.
摘要翻译：提供了用于干燥半导体衬底的干燥系统。所述干燥系统包括：用于容纳蒸气分配器和流体浴的腔室，所述流体浴布置在所述腔室的下部中，并且所述分配器布置在所述腔室的上部中以分配用于干燥所述基底的蒸气; 以及流体流动系统，用于将流体流供应到所述流体浴中以用于清洁和干燥所述基体并用于从所述流体浴排出所述流体，其中所述室包括布置在所述上部用于排出所述蒸气的多个排气口。

96. 发明公开

KR1020040046670A 이온주입된 웨이퍼의 오염 탐지 방법 및 장치 失效
标题翻译：检测离子膜污染的装置和方法
公开(公告)号：KR1020040046670A
公开(公告)日：2004-06-05
申请号：KR1020020074663
申请日：2002-11-28
申请人： 삼성전자주식회사
发明人： 양유신 , 전상문 , 최선용 , 전충삼 , 류관우 , 김박송 , 엄태민
IPC分类号： H01L21/66
CPC分类号： G01N25/72
摘要： PURPOSE: A method for detecting contamination of an ion-implanted wafer is provided to precisely detect the contamination state of even a slightly contaminated wafer by applying heat and/or charges to an annealed wafer so as to activate the wafer after an ion implantation process and by measuring thermal wave absorbability. CONSTITUTION: An ion-implanted amorphous wafer is annealed to be transformed into a crystalline wafer(ST32). The crystalline wafer is heated at a temperature of 50-300 deg.C or provided with charges so as to be activated(ST33). The thermal wave absorbability of the activated wafer is measured(ST34).
摘要翻译：目的：提供一种用于检测离子注入晶片的污染物的方法，通过向退火的晶片施加热量和/或电荷来精确地检测即使是微污染的晶片的污染状态，从而在离子注入工艺之后激活晶片，并且通过测量热波吸收性。构成：将离子注入的非晶晶片退火以转变成晶体晶片（ST32）。将晶体晶片在50-300℃的温度下加热或提供电荷使其被激活（ST33）。测量活化晶片的热波吸收性（ST34）。

97. 发明授权

KR100434491B1 레지스트 또는 식각 부산물 제거용 조성물 및 이를 이용한레지스트 제거 방법 失效
标题翻译： 레지스트또는식각부산물제거용조성물및이를이용한레지스트제거방
公开(公告)号：KR100434491B1
公开(公告)日：2004-06-05
申请号：KR1020010049601
申请日：2001-08-17
申请人： 삼성전자주식회사
发明人： 박동진 , 김경대 , 전상문 , 황진호 , 손일현 , 박상오 , 전필권
IPC分类号： G03F7/32
CPC分类号： C11D1/526 , C11D11/0047 , G03F7/425
摘要： Resist-removing composition comprises an N-hydroxyalkyl alkoxyalkanamide (I) and a swelling agent. An independent claim is also included for a process for removing a resist layer from a substrate, comprising contacting the substrate with a composition as above.
摘要翻译：抗蚀剂去除组合物包含N-羟烷基烷氧基链烷酰胺（I）和溶胀剂。还包括独立权利要求用于从基材去除抗蚀剂层的方法，包括使基材与如上所述的组合物接触。

98. 发明公开

KR1020040038560A 콘택홀 깊이 측정 방법 无效
标题翻译：测量接触孔深度的方法
公开(公告)号：KR1020040038560A
公开(公告)日：2004-05-08
申请号：KR1020020067572
申请日：2002-11-01
申请人： 삼성전자주식회사
发明人： 박동진 , 전상문 , 최선용 , 전충삼 , 김정수
IPC分类号： H01L21/66
摘要： PURPOSE: A method for measuring the depth of a contact hole is provided to be capable of quickly checking the profile of the contact hole without the damage of a semiconductor substrate. CONSTITUTION: Each wavelength intensity reflected from the upper and lower portion of a contact hole is measured by focusing a light source to the first position of the contact hole(S110,S120). The focusing point of the light source is moved from the first position of the contact hole to the second position(S130). Each wavelength intensity reflected from the upper and lower portion of the contact hole is measured according to each focusing point formed while the focusing point of the first position is moved to the second position of the contact hole(S140). Each wavelength intensity reflected from the upper and lower portion of the contact hole is measured by focusing the light source to the second position of the contact hole(S150). The depth of the contact hole is measured by using the difference between the first and second focusing point value(S160).
摘要翻译：目的：提供一种用于测量接触孔深度的方法，以便能够快速地检查接触孔的轮廓而不会损坏半导体衬底。构成：通过将光源聚焦到接触孔的第一位置（S110，S120）来测量从接触孔的上部和下部反射的每个波长强度。光源的聚焦点从接触孔的第一位置移动到第二位置（S130）。根据在第一位置的聚焦点移动到接触孔的第二位置时形成的每个聚焦点来测量从接触孔的上部和下部反射的每个波长强度。通过将光源聚焦到接触孔的第二位置来测量从接触孔的上部和下部反射的每个波长强度（S150）。通过使用第一和第二聚焦点值之间的差来测量接触孔的深度（S160）。

99. 发明公开

KR1020040033526A 신너 조성물 및 이를 사용한 포토레지스트의 스트립핑 방법 有权
标题翻译：使用它的光电组合物的薄膜组合物和剥离方法
公开(公告)号：KR1020040033526A
公开(公告)日：2004-04-28
申请号：KR1020020062652
申请日：2002-10-15
申请人： 삼성전자주식회사
发明人： 안승현 , 전상문 , 정회식 , 최백순 , 임영철 , 배은미 , 장옥석
IPC分类号： H01L21/027
摘要： PURPOSE: A thinner composition and a stripping method of photoresist using the same are provided to be capable of obtaining excellent stripping characteristics and reducing the cost of thinner composition. CONSTITUTION: A thinner composition for stripping photoresist is mainly made of propylene glocol monomethyl ether acetate, ethyl 3-ethoxy propionate, and gamma-butyrolactone. Preferably, the contents of the propylene glocol monomethyl ether acetate, the ethyl 3-ethoxy propionate, and the gamma-butyrolactone are 50-80 weight%, 10-45 weight%, and 1-12 weight%, respectively. Preferably, the contents are 53-75 weight%, 12-30 weight%, and 2-10 weight%, respectively. Preferably, the thinner composition further contains surfactant.
摘要翻译：目的：提供更薄的组合物和使用其的光致抗蚀剂的剥离方法，以能够获得优异的剥离特性并降低较薄组合物的成本。构成：用于剥离光刻胶的较薄组合物主要由丙烯甘油单甲醚乙酸酯，3-乙氧基丙酸乙酯和γ-丁内酯制成。丙烯·甘油单甲醚乙酸酯，3-乙氧基丙酸乙酯，γ-丁内酯的含量优选分别为50〜80重量％，10-45重量％，1-12重量％。优选的含量分别为53-75重量％，12-30重量％和2-10重量％。优选地，较薄的组合物还含有表面活性剂。

100. 发明授权

KR100425447B1 명도 보정 및 선택적 결함 검출 방법 및 이를 기록한 기록매체 有权
标题翻译：空值
公开(公告)号：KR100425447B1
公开(公告)日：2004-03-30
申请号：KR1020010025578
申请日：2001-05-10
申请人： 삼성전자주식회사
发明人： 전충삼 , 전상문 , 김형진 , 이동춘 , 최상봉 , 류성곤
IPC分类号： H01L21/66
CPC分类号： G06T5/008 , G06T7/90 , G06T2207/20021 , G06T2207/30148
摘要： 웨이퍼 표면의 명도를 보정하는 방법 및 서로 다른 패턴에 대한 선택적 결함 검출 방법, 그리고 이러한 방법들을 기록한 기록 매체에 관해 개시한다. 웨이퍼를 분할하는 각 픽셀들의 평균과 표준 편차를 이용함으로써, 명도차가 있는 이미지들의 명도를 보정할 수 있다. 또한, 금속 배선 패턴과 스페이스를 구별하여, 각 패턴에 대해 서로 다른 임계값을 적용함으로써, 선택적으로 결함을 검출할 수 있다. 즉, 그레인은 검출하지 않고, 반도체 소자에 치명적인 영향을 주는 브리지만 검출할 수 있다. 따라서, 결함 검출의 선별력이 향상되므로, 결함 검출 공정을 더 효율적으로 관리할 수 있다.
摘要翻译：提供了一种用于校正晶片表面上的颜色变化的方法，用于从不同图案中选择性地检测缺陷的方法，以及用于其的计算机可读记录介质。可以使用形成晶片的每个不同部分的像素的灰度级的平均值和标准偏差校正晶片的不同部分的图像的颜色变化。此外，不同的阈值被施加到晶片的金属互连图案和空间，从而可以从不同的图案中选择性地检测缺陷。因此，可以检测到称为半导体器件的致命或杀伤缺陷的桥，而不会将晶粒错误地检测为致命缺陷。由于方法的缺陷筛选能力增加，可以进一步有效地管理缺陷检测方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式