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91. 发明专利

JP3928690B2 New lactone compound having an alicyclic structure and a method of manufacturing the same 有权
公开(公告)号：JP3928690B2
公开(公告)日：2007-06-13
申请号：JP2000205217
申请日：2000-07-06
申请人：信越化学工業株式会社
发明人：睦雄中島 , 誠一郎橘 , 武渡辺 , 畠山　　潤 , 恒寛西 , 剛金生 , 幸士長谷川
IPC分类号： C07D307/32 , G03F7/004 , C07D307/33 , C07D315/00 , C08F32/00 , C08G61/08 , G03F7/039 , H01L21/027
CPC分类号： C07D315/00 , G03F7/0395
摘要： Lactone compounds of formula (1) are novel and useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography.Letter k is 0 or 1 and m is an integer of 1-8.

92. 发明专利

JP3839218B2 Silicon-containing compound, resist composition and pattern forming method 有权
公开(公告)号：JP3839218B2
公开(公告)日：2006-11-01
申请号：JP2000095990
申请日：2000-03-31
申请人：信越化学工業株式会社
发明人：武渡辺 , 潤畠山 , 剛金生 , 幸士長谷川
IPC分类号： C08F230/08 , G03F7/039 , C08F30/08 , C08F32/00 , C08F232/08 , C08F234/00 , C08K5/00 , C08L43/04 , C08L45/00 , G03F7/075 , G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a new polymeric silicon compound having high sensitivity and high resolution, which is not only used preferably as a material for two- layered resist method particularly suitable for forming a pattern of high aspect ratio, but also useful as a base polymer for a chemically amplified positive type resist material which can form a superior pattern in heat resistance, and to provide a chemically amplified positive type resist material including the compound as the base polymer and a method of forming a pattern. SOLUTION: A compound includes one or more silicon containing substituents selected from general formulas (1)-(3).

93. 发明专利

JP5516200B2 Pattern formation method, the chemically amplified positive resist composition, and a resist-modifying composition 有权
公开(公告)号：JP5516200B2
公开(公告)日：2014-06-11
申请号：JP2010174175
申请日：2010-08-03
申请人：信越化学工業株式会社
发明人：武渡辺 , 恒寛西 , 匡史飯尾
IPC分类号： G03F7/40 , G03F7/039 , H01L21/027
CPC分类号： G03F7/70466 , C08F220/60 , C08F224/00 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.

94. 发明专利

JP5440515B2 Resist material and pattern forming method 有权
标题翻译：空值
公开(公告)号：JP5440515B2
公开(公告)日：2014-03-12
申请号：JP2011005428
申请日：2011-01-14
申请人：信越化学工業株式会社
发明人：正義提箸 , 畠山　　潤 , 武渡辺 , 知洋小林
IPC分类号： C08F20/26 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C07D211/44 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/2037 , G03F7/2039 , G03F7/2041 , G03F7/30
摘要： A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.
摘要翻译：具有更好性能的化学放大型正性抗蚀剂组合物可以使用其中掺入猝灭剂的聚合物，特别是包含具有氨基甲酸酯结构的重复单元的聚合物来配制，该聚合单元用酸分解以产生氨基，以及任选的具有酸不稳定性的重复单元能够在酸的作用下产生羧基和/或羟基的基团。该聚合物对于抑制酸的扩散非常有效，并且自身扩散，并且组合物以高分辨率形成矩形轮廓的图案。

95. 发明专利

JP5434938B2 Chemically amplified resist composition and a patterning process 有权
公开(公告)号：JP5434938B2
公开(公告)日：2014-03-05
申请号：JP2011043556
申请日：2011-03-01
申请人：信越化学工業株式会社
发明人：武渡辺 , 知洋小林 , 正義提箸 , 岳志永田 , 洋一大澤 , 良輔谷口
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.

96. 发明专利

JP5402651B2 The positive resist materials and pattern forming method using the same 有权
公开(公告)号：JP5402651B2
公开(公告)日：2014-01-29
申请号：JP2010002699
申请日：2010-01-08
申请人：信越化学工業株式会社
发明人：畠山　　潤 , 誠一郎橘 , 武渡辺
IPC分类号： G03F7/039 , G03F7/004
摘要： PROBLEM TO BE SOLVED: To provide a positive resist material that imparts a resist film having high resolution, low line-edge roughness, and a proper pattern profile, after exposure and showing superior etching durability, particularly, a positive resist material which uses a polymer compound suitable as a base resin for a chemically amplified positive resist material, and to provide a method for forming a pattern. SOLUTION: The positive resist material contains resin as a base resin, in which a hydrogen atom in a carboxy group is substituted by an acid unstable group expressed by formula (1). In formula (1), R 1 and R 2 each represent a hydrogen atom, alkyl group, alkoxy group, alkanoyl group, alkoxycarbonyl group, hydroxy group, nitro group, aryl group, halogen atom or cyano group; R represents a hydrogen atom, alkyl group, alkenyl group, alkynyl group or aryl group; and m and n are integers of 1 to 4. Consequently, the positive resist material has a markedly high contrast in an alkali dissolution rate before and after exposure, high resolution, and a proper pattern profile and preferable edge roughness after exposure, as well as suppresses the acid diffusion rate and exhibits superior etching resistance. COPYRIGHT: (C)2011,JPO&INPIT

97. 发明专利

JP5395012B2 Resist underlayer film material, the resist underlayer film forming method, pattern forming method, fullerene derivative 有权
公开(公告)号：JP5395012B2
公开(公告)日：2014-01-22
申请号：JP2010186579
申请日：2010-08-23
申请人：信越化学工業株式会社
发明人：武渡辺 , 俊彦藤井 , 剛金生 , 勤荻原
IPC分类号： G03F7/11 , C07C69/753 , C08G8/20 , G03F7/26 , G03F7/40 , H01L21/027
CPC分类号： H01L21/31144 , C07C69/753 , C07C2604/00 , G03F7/11 , H01L21/0271 , H01L21/31116

98. 发明专利

JP5353816B2 Resist-modifying composition and pattern forming method 有权
公开(公告)号：JP5353816B2
公开(公告)日：2013-11-27
申请号：JP2010115971
申请日：2010-05-20
申请人：信越化学工業株式会社
发明人：武渡辺 , 和弘片山 , 匡史飯尾 , 畠山　　潤 , 恒寛西 , 剛金生
IPC分类号： G03F7/40 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273
摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

99. 发明专利

JP5309526B2 Hydrogenated ring-opening metathesis polymer, resist material and pattern forming method containing the same 有权
公开(公告)号：JP5309526B2
公开(公告)日：2013-10-09
申请号：JP2007272193
申请日：2007-10-19
申请人：信越化学工業株式会社 , 三井化学株式会社
发明人：知洋小林 , 剛金生 , 武渡辺 , 忠弘須永 , 祐一大川
IPC分类号： C08G61/08 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0395 , C08G61/08 , Y10S430/106
摘要： Resist compositions comprising a hydrogenated ring-opening metathesis polymer bearing an alicyclic structure in its backbone and comprising structural units having an oxygen atom incorporated as part of the cyclic structure exhibit a high resolution and minimal proximity bias upon ArF excimer laser lithography and have high etching resistance.

100. 发明专利

JP5083528B2 The resist material and a patterning method using the same, as well as novel photoacid generator 有权
公开(公告)号：JP5083528B2
公开(公告)日：2012-11-28
申请号：JP2007243560
申请日：2007-09-20
申请人：信越化学工業株式会社
发明人：洋一大澤 , 武渡辺 , 幸士長谷川 , 正樹大橋
IPC分类号： G03F7/004 , C07C25/02 , C07C309/12 , C07C381/12 , C07D307/93 , C07D333/46 , G03F7/039 , G03F7/075 , H01L21/027

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