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    • 95. 发明授权
    • Electron-beam exposure system, a mask for electron-beam exposure and a method for electron-beam exposure
    • 电子束曝光系统,用于电子束曝光的掩模和用于电子束曝光的方法
    • US06355383B1
    • 2002-03-12
    • US09511312
    • 2000-02-23
    • Hiroshi Yamashita
    • Hiroshi Yamashita
    • G03F900
    • B82Y10/00B82Y40/00G03F1/20G03F7/2037H01J37/3174H01J2237/31794Y10S430/143
    • This invention provides a scattering-angle limiting type of electron-beam exposure system having a mask comprising a scattering region and a limiting aperture which limits the amount of scattered electrons passing through the mask, comprising a first limiting aperture fixed at or near a crossover plane and having a central opening and a closed elongated opening surrounding the central opening; and a second limiting aperture shiftable along an optical axis and having a central opening and a closed elongated opening surrounding the central opening, as well as an electron-beam exposure process using the system. This invention also provides a stencil type of mask suitable for the exposure system and the exposure process. According to this invention, proximity effect correction can be adjusted without significantly reducing a throughput and with excellent linewidth accuracy, especially in a patterning step in manufacturing a semiconductor device. The mask of this invention can be readily prepared with an accurate mask pattern, allowing pattern exposure to be conducted with improved resolution and accuracy.
    • 本发明提供一种具有散射角限制型的电子束曝光系统,其具有包括散射区域和限制穿过掩模的散射电子量的限制孔径的掩模,该限制孔口包括固定在交叉平面处或附近的第一限制孔径 并具有围绕中心开口的中心开口和封闭的细长开口; 以及沿着光轴可移位的第二限制孔,并且具有围绕中心开口的中心开口和闭合的细长开口,以及使用该系统的电子束曝光过程。 本发明还提供适用于曝光系统和曝光过程的模版类型的掩模。 根据本发明,可以调节邻近效应校正,而不会显着降低生产量和良好的线宽精度,特别是在制造半导体器件的图案化步骤中。 本发明的掩模可以容易地用精确的掩模图案制备,允许以改进的分辨率和精度进行图案曝光。
    • 99. 发明授权
    • Photographic processing apparatus
    • 摄影处理设备
    • US06079884A
    • 2000-06-27
    • US241891
    • 1999-02-01
    • Hiroshi Yamashita
    • Hiroshi Yamashita
    • G03D3/00G03D3/06G03D3/13G03D3/08
    • G03D3/132G03D3/06
    • An apparatus for processing a silver halide light sensitive photographic material is disclosed, comprising a first processing tank and a second processing tank adjacent to the first tank, wherein the value represented by RxL1/S is from 0.05 to 0.4, in which R represents a radius (cm) of curvature of an external turn section between the first processing tank and the second processing tank, L1 represents a path length (cm) in a portion immersed in a processing solution of the first processing tank and S represents a transport speed (cm/min.) of the photographic material at a processing station.
    • 公开了一种用于处理卤化银感光照相材料的设备,包括与第一罐相邻的第一处理槽和第二处理槽,其中由RxL1 / S表示的值为0.05至0.4,其中R表示半径 在第一处理槽和第二处理槽之间的外弯部的曲率半径(cm),L1表示浸渍在第一处理槽的处理液中的部分的路径长度(cm),S表示输送速度(cm /分钟)的照相材料。