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91. 发明专利

JP2014100062A Method and apparatus for control circuit responding to impedance coupled to control circuit terminal 审中-公开
标题翻译：用于控制回路的控制电路的方法和装置与阻抗相关联以控制电路终端
公开(公告)号：JP2014100062A
公开(公告)日：2014-05-29
申请号：JP2014036736
申请日：2014-02-27
申请人： Power Integrations Inc , パワー・インテグレーションズ・インコーポレーテッド
发明人： WANG ZHAO-JUN , BAURLE STEFAN , MATTHEWS DAVID MICHAEL HUGH
IPC分类号： H02M3/28
CPC分类号： H02M3/33523 , H02M1/32 , H02M3/33507
摘要： PROBLEM TO BE SOLVED: To provide a power supply controller method and apparatus for measuring impedance.SOLUTION: An apparatus according to an embodiment of the present invention comprises a sense circuit coupled to a sensing terminal. A regulation circuit is coupled to the sensing circuit, and coupled to regulate the sensing terminal to a first voltage level when current flowing through the sensing terminal is smaller than a first threshold current level. The regulation circuit is further coupled to regulate the sensing terminal to a second voltage level when the current flowing through the sensing terminal reaches the first threshold current level. A response circuit is coupled to the sensing circuit and responsive to the current flowing through the sensing terminal when the sensing terminal is regulated at the second voltage level.
摘要翻译：要解决的问题：提供一种用于测量阻抗的电源控制器方法和装置。解决方案：根据本发明的实施例的装置包括耦合到感测端子的感测电路。调节电路耦合到感测电路，并且当流过感测端子的电流小于第一阈值电流电平时，耦合到将感测端子调节到第一电压电平。当流过感测端的电流达到第一阈值电流电平时，调节电路进一步耦合以将感测端调节到第二电压电平。当感测端被调节在第二电压电平时，响应电路耦合到感测电路并且响应于流过感测端的电流。

92. 发明专利

JP2014512765A Circuit comprising a cascade switch and this switch including a normally-off device and the normally-on devices 审中-公开
公开(公告)号：JP2014512765A
公开(公告)日：2014-05-22
申请号：JP2014505149
申请日：2012-03-22
申请人：パワー・インテグレーションズ・インコーポレーテッド
发明人：ニージェルスプリンゲット
IPC分类号： H03K17/06
CPC分类号： H03K17/168 , H03K17/04206 , H03K17/161 , H03K17/567 , H03K17/687 , H03K17/6871 , H03K2017/6875
摘要：カスケード構成のノーマリーオフ半導体装置およびノーマリーオン半導体装置を備えるスイッチについて説明する。スイッチは、ノーマリーオン装置のゲートとノーマリーオフ装置のソースとの間に接続されたコンデンサを含む。スイッチは、ノーマリーオン装置のゲートとノーマリーオフ装置のソースとの間でコンデンサに並列接続されたツェナーダイオードをさらに含んでいてもよい。スイッチは、ノーマリーオフ装置のゲートとソースとの間で逆向に直列接続された１組のツェナーダイオードをさらに含んでいてもよい。複数のノーマリーオンおよび／または複数のノーマリーオフ装置を備えるスイッチについてさらに説明する。ノーマリーオン装置は、ＳｉＣＪＦＥＴなどのＪＦＥＴであってもよい。ノーマリーオフ装置は、ＳｉＭＯＳＦＥＴなどのＭＯＳＦＥＴであってもよい。ノーマリーオン装置は、高電圧装置であってもよく、ノーマリーオフ装置は、低電圧装置であってもよい。スイッチを備える回路についてさらに説明する。

93. 发明专利

JP2014060918A Power converter and method for regulating output of power converter 审中-公开
标题翻译：用于调节功率转换器输出的功率转换器和方法
公开(公告)号：JP2014060918A
公开(公告)日：2014-04-03
申请号：JP2013244829
申请日：2013-11-27
申请人： Power Integrations Inc , パワー・インテグレーションズ・インコーポレーテッド
发明人： DJENGUERIAN ALEX B , BALAKRISHNAN BALU , BIRCAN ERDEM
IPC分类号： H02M3/28
CPC分类号： H02M3/33515 , H02M3/157
摘要： PROBLEM TO BE SOLVED: To provide a power converter control method and apparatus.SOLUTION: The power converter controller includes: a feedback sampling circuit 170 to be coupled to an output of a power converter 100 to generate feedback sample signals U175 during enabled switching cycles; and a switch conduction control circuit 185 coupled to the feedback sampling circuit 170 which includes a switch conduction enable circuit that is coupled to enable or disable the conduction of a power switch 120 during a switching cycle in response to the feedback sample signals U175, and a switch conduction scheduling circuit that is coupled to determine a varying number of future enabled and disabled switching cycles in response to the feedback sample signals U175 from a present switching cycle and one or more past switching cycles.
摘要翻译：要解决的问题：提供一种功率转换器控制方法和装置。解决方案：功率转换器控制器包括：反馈采样电路170，其被耦合到功率转换器100的输出端，以在可用的开关周期期间产生反馈采样信号U175; 以及耦合到反馈采样电路170的开关导通控制电路185，其包括开关导通使能电路，其被耦合以响应于反馈采样信号U175而在开关周期期间启用或禁用功率开关120的导通，以及开关导通调度电路，其被耦合以响应于来自当前开关周期的反馈采样信号U175和一个或多个过去的开关周期来确定将来启用和禁用的开关周期的变化数量。

94. 发明专利

JP5437354B2 Power method and apparatus to increase the supply capacity of the 有权
公开(公告)号：JP5437354B2
公开(公告)日：2014-03-12
申请号：JP2011255161
申请日：2011-11-22
申请人：パワー・インテグレーションズ・インコーポレーテッド
发明人：チャン・ウーン・パク , アレックス・ビイ・ジェンゲリアン , ケント・ウォン
IPC分类号： H02M3/28
CPC分类号： G06F1/324 , H02M3/335

95. 发明专利

JP5418899B2 How to prevent transformer saturation in the control circuit and power converter for use in a power converter 有权
公开(公告)号：JP5418899B2
公开(公告)日：2014-02-19
申请号：JP2009212738
申请日：2009-09-15
申请人：パワー・インテグレーションズ・インコーポレーテッド
发明人：ロバート・ジェイ・メイエル
IPC分类号： H02M3/28
CPC分类号： H02M1/40 , H02M1/36 , H02M3/3353 , H02M2003/1566

97. 发明专利

JP5403747B2 High voltage vertical transistor having a multi-layered extended drain structure 有权
公开(公告)号：JP5403747B2
公开(公告)日：2014-01-29
申请号：JP2009252241
申请日：2009-11-02
申请人：パワー・インテグレーションズ・インコーポレーテッド
发明人：レイディズニードナルド
IPC分类号： H01L29/78 , H01L29/786 , H01L21/336 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/423
CPC分类号： H01L29/402 , H01L29/0653 , H01L29/0878 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L29/7824 , H01L29/7825 , H01L29/7828
摘要： A high-voltage semiconductor structure (20) with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions (27) disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions (22) separated from field plate members (24) by one or more dielectric layers (28). With the field plate members at the lowest circuit potential, the transistor supports high voltages applied to the drain in the off-state. The layered structure may be fabricated in a variety of orientations. A MOSFET structure may be incorporated into the device adjacent to the source region, or, alternatively, the MOSFET structure may be omitted to produce a high-voltage semiconductor structure having a stand-alone drift region (101).

98. 发明专利

JP5369279B2 Cascaded pfc and a resonant mode power converter 有权
公开(公告)号：JP5369279B2
公开(公告)日：2013-12-18
申请号：JP2009545779
申请日：2008-01-22
申请人：パワー・インテグレーションズ・インコーポレーテッド
发明人：オーア，レイモンド・ケニス , コルベック，ロジャー , ホロウィッツ，ハートリー , クレイン，フィリップ , ボロス，ミルセア・クリスチャン
IPC分类号： H02M3/28
CPC分类号： H02M3/3376 , H02M1/4225 , H02M2001/0058 , H02M2001/007 , Y02B70/126 , Y02B70/1433 , Y02B70/1491
摘要： A control unit controls cascaded PFC and LLC converters, the LLC converter having an input coupled to an output, of the PFC converter and providing an output voltage that decreases with increasing switching frequency. The control unit produces a sawtooth waveform with a linear ramp for controlling the LLC converter switching frequency, and hence its output voltage, in dependence upon a feedback signal. It also produces for the PFC converter a PWM signal with a frequency that is the same as or an integer fraction of the LLC converter switching frequency, by comparing two thresholds with the linear ramp in respective different cycles of the sawtooth waveform to turn on and off a switch of the PFC converter during these different cycles. Logic circuits prevent PFC converter switch transitions from occurring simultaneously with switching transitions of the LLC converter.

99. 发明专利

JP5354808B2 Method of fabricating a high voltage transistor on a substrate 有权
公开(公告)号：JP5354808B2
公开(公告)日：2013-11-27
申请号：JP2011067944
申请日：2011-03-25
申请人：パワー・インテグレーションズ・インコーポレーテッド
发明人：レイディズニードナルド , ダーウィッシュモハメド
IPC分类号： H01L29/06 , H01L29/786 , H01L21/336 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/861
CPC分类号： H01L29/7824 , H01L29/0653 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7802 , H01L29/7813 , H01L29/7825 , H01L29/86 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A high-voltage semiconductor structure (40) with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions (42) separated from field plate members (44) by one or more dielectric layers (49). With the field plate members at the lowest circuit potential, the transistor supports high voltages applied to the drain in the off-state. The layered structure may be fabricated in a variety of orientations.

100. 发明专利

JP5320450B2 Method and apparatus for limiting the maximum switch current in the switching power supply 有权
公开(公告)号：JP5320450B2
公开(公告)日：2013-10-23
申请号：JP2011252617
申请日：2011-11-18
申请人：パワー・インテグレーションズ・インコーポレーテッド
发明人：アレックス・ビイ・ジェンゲリアン , アンドリュー・ジェイ・モリッシュ
IPC分类号： H02M3/28
CPC分类号： H02M1/32 , H02M3/33507 , H02M2001/0009 , H02M2001/0038
摘要： Techniques are disclosed to limit the current in a switch of a switching power supply. An example switching regulator circuit includes a power switch (120) to be coupled to an energy transfer element (125) of a power supply. A controller (145) to generate a drive signal is coupled to be received by the power switch (120) to control the switching of the power switch (120). A short on time detector is included in the controller (145). The short on time detector is to detect an occurrence of threshold number of one or more consecutive short on times of the switch (120). A frequency adjuster is also included in the controller (145) and coupled to the short on time detector. The frequency adjuster is to adjust an oscillating frequency of an oscillator included in the controller in response to the short on time detector.

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