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1. 发明公开

CN1639604A 具有两个不同通道的光学模式适配器无效
公开(公告)号：CN1639604A
公开(公告)日：2005-07-13
申请号：CN03805040.4
申请日：2003-02-28
申请人：西利奥斯技术公司
发明人：斯蒂芬·逖斯兰德 , 劳兰特·洛克斯 , 法毕安·瑞维尔赛特 , 索菲·雅各布 , 罗多维克·艾索贝斯 , 埃玛纽埃尔·德鲁阿尔
IPC分类号： G02B6/30 , G02B6/26 , G02B6/12
CPC分类号： G02B6/14 , G02B2006/12038 , G02B2006/12173 , G02B2006/12176 , G02B2006/12178 , G02B2006/12183 , G02B2006/12188
摘要：本发明提出了一光学模式适配器，所述适配器包括在光学基片(31)上有第一通道(C1)和第二通道(C2)，以把第一波导和第二波导分别连接到其第一(11)、第二(12)端上。所述两通道覆盖有至少一导引层(33)，第一通道(C1)的折射率比第二通道(C2)的小。

2. 发明授权

CN104093676B 新型材料有权
公开(公告)号：CN104093676B
公开(公告)日：2018-04-10
申请号：CN201380008820.9
申请日：2013-02-08
申请人：利兹大学
发明人：琴·乔斯 , 托尼-泰迪·费尔南德斯 , 皮特-约翰·格兰特 , 阿尼姆什·贾 , 西卡·萨哈 , 大卫-保罗·斯廷森
IPC分类号： C03C23/00 , C08J7/00 , G02B6/12
CPC分类号： C03C23/0055 , A61B5/1455 , C03C3/04 , C23C14/48 , G02B2006/12061 , G02B2006/12188 , Y10T428/31 , Y10T428/315
摘要：本发明涉及一种包括离子注入层，例如阳离子注入层的基板，其中，所述离子注入层的注入离子在比之前可能的深度明显更大的深度均匀分布。本发明还包括所述基板，其中所述基板是硅基基板，比如玻璃。本发明也可以包括将所述材料用作波导和/或将所述材料用于测量设备中。

3. 发明公开

CN104093676A 新型材料有权
公开(公告)号：CN104093676A
公开(公告)日：2014-10-08
申请号：CN201380008820.9
申请日：2013-02-08
申请人：利兹大学
发明人：琴·乔斯 , 托尼-泰迪·费尔南德斯 , 皮特-约翰·格兰特 , 阿尼姆什·贾 , 西卡·萨哈 , 大卫-保罗·斯廷森
IPC分类号： C03C23/00 , C08J7/00 , G02B6/12
CPC分类号： C03C23/0055 , A61B5/1455 , C03C3/04 , C23C14/48 , G02B2006/12061 , G02B2006/12188 , Y10T428/31 , Y10T428/315
摘要：本发明涉及一种包括离子注入层，例如阳离子注入层，的基板，其中，所述离子注入层的注入离子在比之前可能的深度明显更大的深度均匀分布。本发明还包括所述基板，其中所述基板是硅基基板，比如玻璃。本发明也可以包括将所述材料用作波导和/或将所述材料用于测量设备中。

4. 发明公开

EP0474447A1 Method of producing an apparatus comprising an optical gain device 失效
标题翻译：设备与光放大器器件和用于制造该装置的方法。
公开(公告)号：EP0474447A1
公开(公告)日：1992-03-11
申请号：EP91308003.2
申请日：1991-08-30
申请人： AT&T Corp.
发明人： Blonder, Greg. E. , Jacobson, Dale C. , Kistler, Rodney C. , Poate, John M. , Polman, Albert
IPC分类号： G02B6/10 , G02B6/12 , H01S3/10
CPC分类号： G02B6/122 , G02B6/1228 , G02B6/262 , G02B2006/12038 , G02B2006/12061 , G02B2006/12188 , H01S3/063
摘要： Disclosed is apparatus comprising an optically pumped optical gain device that comprises a rare earth (RE)-doped planar waveguide (12) with non-uniform dopant distribution in the core of the waveguide. The RE ions are advantageously distributed such that the ions are concentrated in a core region in which the mode intensity of both signal radiation and pump radiation is relatively high. In preferred embodiments of a single mode planar waveguide (12) according to the invention the RE ions are substantially concentrated in the central core region (122). A method of making the disclosed apparatus is also disclosed. The method involves implantation of RE ions into the core region.
摘要翻译：本发明公开了一种设备，包括平面波导到光泵浦光增益装置确实包括稀土（RE）掺杂（12）与所述波导的芯的非均匀掺杂分布。被有利地分布检查RE离子没有离子被在核心区域集中在其中两个信号辐射的模强度和泵浦辐射是比较高的。在一个单一的模式平面波导（12），雅鼎发明的RE离子在中央芯部区域（122）显着地浓缩的优选实施例。游离缺失使得光盘装置游离缺失盘gibt的方法。该方法涉及RE离子注入到芯区。

5. 发明申请

WO2002063347A2 INTEGRATED PLANAR COMPOSITE COUPLING STRUCTURES FOR BI-DIRECTIONAL LIGHT BEAM TRANSFORMATION BETWEEN A SMALL MODE SIZE WAVEGUIDE AND A LARGE MODE SIZE WAVEGUIDE 审中-公开
标题翻译：用于小尺寸波形和大型模块尺寸波形之间的双向光束变换的集成平面复合耦合结构
公开(公告)号：WO2002063347A2
公开(公告)日：2002-08-15
申请号：PCT/US2001/049920
申请日：2001-10-22
申请人： PHOSISTOR TECHNOLOGIES, INCORPORATED , ZHOU, Yan , HO, Seng-Tiong
发明人： ZHOU, Yan , HO, Seng-Tiong
IPC分类号： G02B
CPC分类号： G02B6/14 , G02B6/1228 , G02B6/4206 , G02B2006/12176 , G02B2006/12188
摘要： Composite optical waveguide structures or mode transformers and their methods of fabrication and integration are disclosed, wherein the structures or mode transformers are capable of bi-directional light beam transformation between a small mode size waveguide and a large mode size waveguide. One aspect of the present inventioon is directed to an optical mode transformer comprising a waveguide core having a high refractive index contrast between the waveguide core and the cladding, the optical mode transformer being configured such that the waveguide core has a taper wherein a thickness of the waveguide core tapers down to a critical thickness value, the critical thickness value being defined as a thickness value below which a significant portion of the energy of a light beam penetrates into the cladding layers surrounding the taper structure thereby enlarging the small mode size. This primary tapered core structure may be present in either a vertical or horizontal direction and may be combined with further up taper or down taper structures in the directions transverse to the primary taper direction. Another aspect of the present invention is directed to a non-cylindrical graduated refractive index (GRIN) lens structure. The non-cylindrical GRIN structure has a graded refractive index having a maximum value at its core and a minimum value at its outer edges. The grading of the refractive index is provided in a either the vertical or horizontal directions and may have either a fixed refractive index or a graded refractive index in the transverse directions. Yet another aspect of the present invention is directed to composite optical mode transformers that are combinations of the taper waveguide structures and the non-cylindrical graduated refractive index structures. Yet another aspect of the present invention is the further integration of the mode transformers with V-grooves for multiple input/output fibers and alignment platform for multiple input/output photonic chips or devices.
摘要翻译：公开了复合光波导结构或模式变换器及其制造和集成方法，其中结构或模式变压器能够在小模尺寸波导和大模尺寸波导之间进行双向光束变换。本发明的一个方面涉及一种光模变压器，其包括在波导芯和包层之间具有高折射率对比度的波导芯，光模变换器被配置为使得波导芯具有锥形，其中，波导芯逐渐缩小到临界厚度值，临界厚度值被定义为厚度值，在该厚度值之下，光束的大部分能量穿透到围绕锥形结构的包覆层中，从而扩大了小模式尺寸。该主锥形芯结构可以在垂直方向或水平方向上存在并且可以在与主锥形方向横切的方向上与进一步向上的锥形或向下锥形结构组合。本发明的另一方面涉及非圆柱形刻度折射率（GRIN）透镜结构。非圆柱形GRIN结构具有其核心处具有最大值的梯度折射率，并且在其外边缘处具有最小值。折射率的分级设置在垂直方向或水平方向上，并且可以在横向上具有固定折射率或渐变折射率。本发明的另一方面涉及作为锥形波导结构和非圆柱形刻度折射率结构的组合的复合光学模式变压器。本发明的另一方面是模式变压器与用于多个输入/输出光纤的V形槽和多个输入/输出光子芯片或器件的对准平台的进一步集成。

6. 发明公开

EP1481273A1 ADAPTATEUR DE MODE OPTIQUE POURVU DE DEUX CANAUX DISTINCTS 审中-公开
标题翻译：与两个不同的通道光学模式适配器
公开(公告)号：EP1481273A1
公开(公告)日：2004-12-01
申请号：EP03718916.4
申请日：2003-02-28
申请人： Silios Technologies
发明人： TISSERAND, Stephane , ROUX, Laurent , REVERSAT, Fabian , JACOB, Sophie , ESCOUBAS, Ludovic , DROUARD, Emmanuel
IPC分类号： G02B6/30 , G02B6/26 , G02B6/12
CPC分类号： G02B6/14 , G02B2006/12038 , G02B2006/12173 , G02B2006/12176 , G02B2006/12178 , G02B2006/12183 , G02B2006/12188
摘要： The invention concerns an optical mode adapter comprising first (C1) and second (C2) channels on an optical substrate (31) designed for connection of first and second waveguides respectively to its first (11) and to its second (12) ends. Said two channels being covered with at least a guide layer (33), the refractive index of the first channel (C1) is lower than that of the second channel (C2). The invention also concerns a method for making said adapter.

7. 发明授权

EP0474447B1 Method of producing an apparatus comprising an optical gain device 失效
标题翻译：一种用于生产具有光放大器装置的装置处理
公开(公告)号：EP0474447B1
公开(公告)日：1996-10-23
申请号：EP91308003.2
申请日：1991-08-30
申请人： AT&T Corp.
发明人： Blonder, Greg. E. , Jacobson, Dale C. , Kistler, Rodney C. , Poate, John M. , Polman, Albert
IPC分类号： G02B6/10 , G02B6/12 , H01S3/10
CPC分类号： G02B6/122 , G02B6/1228 , G02B6/262 , G02B2006/12038 , G02B2006/12061 , G02B2006/12188 , H01S3/063

8. 发明授权

US12032205B2 Co-manufacturing of silicon-on-insulator waveguides and silicon nitride waveguides for hybrid photonic integrated circuits 有权
公开(公告)号：US12032205B2
公开(公告)日：2024-07-09
申请号：US18469710
申请日：2023-09-19
申请人： ORCA Computing Limited
发明人： Brian Mattis , Taran Huffman , Bryan Woo , Thien-An Nguyen
IPC分类号： G02B6/136 , G02B6/12
CPC分类号： G02B6/136 , G02B2006/12061 , G02B2006/12097 , G02B2006/12169 , G02B2006/12188 , G02B2006/12197
摘要： A method of co-manufacturing silicon waveguides, SiN waveguides, and semiconductor structures in a photonic integrated circuit. A silicon waveguide structure can be formed using a suitable process, after which it is buried in a cladding. The cladding is polished, and a silicon nitride layer is disposed to define a silicon nitride waveguide. The silicon nitride waveguide is buried in a cladding, and annealed. Thereafter, cladding above the silicon waveguide structure can be trenched through, and low-temperature operations can be performed to or with an exposed surface of the silicon waveguide structure.

9. 发明申请

US20180314004A1 Thin-film integration compatible with silicon photonics foundry production 审中-公开
公开(公告)号：US20180314004A1
公开(公告)日：2018-11-01
申请号：US15932800
申请日：2018-04-26
申请人： University of Central Florida Research Foundation, Inc.
发明人： Sasan Fathpour , Amirmahdi Honardoost , Saeed Khan
IPC分类号： G02B6/132 , G02B6/122 , G02B6/12
CPC分类号： G02B6/132 , G02B6/12002 , G02B6/12004 , G02B6/1228 , G02B2006/1204 , G02B2006/12061 , G02B2006/12097 , G02B2006/12142 , G02B2006/12188
摘要： A photonic integrated circuit and a method of fabrication are provided which includes: a substrate; a first optical waveguide disposed, at least in part, extending across the substrate, the first optical waveguide being configured to transmit a first mode of light; and a second optical waveguide located at least partially over the first optical waveguide, the second optical waveguide being configured to transmit a second mode of light, wherein the first optical waveguide is vertically coupled to the second optical waveguide through a third optical waveguide disposed below the second waveguide.

10. 发明申请

US20060029330A1 Integrated optics coupling element comprising a grating produced in a cladding and method for making same 失效
标题翻译：包括在包层中产生的光栅的集成光学耦合元件及其制造方法
公开(公告)号：US20060029330A1
公开(公告)日：2006-02-09
申请号：US10538139
申请日：2003-12-15
申请人： Christophe Martinez
发明人： Christophe Martinez
IPC分类号： G02B6/34
CPC分类号： G02B6/124 , C03C21/005 , C03C2218/34 , G02B2006/121 , G02B2006/12147 , G02B2006/12173 , G02B2006/1218 , G02B2006/12183 , G02B2006/12188
摘要： The invention relates to an integrated optics coupling element characterised in that it comprises in a substrate (11) an optical guide core (12), an optical cladding (13) independent of the core and surrounding at least one portion of the core in a zone of the substrate called the zone of interaction, in which the cladding has at least in the zone of interaction a modulation of its structure so as to form a grating (R), in which the refractive index of the cladding is different from the refractive index of the substrate and lower than the refractive index of the core at least in the part of the cladding next to the core in the zone of interaction. The invention has applications in particular for the fabrication of gain flatteners for optical amplifiers or even for the fabrication of linear response filters whose wave length is on a spectral band.
摘要翻译：本发明涉及一种集成光学耦合元件，其特征在于，其包括在基板（11）中的光导芯（12），独立于芯的光学包层（13），并且在区域中包围芯的至少一部分称为相互作用区域，其中包层至少在相互作用区域中具有其结构的调制以便形成光栅（R），其中包层的折射率不同于折射率并且在相互作用区域中至少在包层的靠近芯的部分中的芯的折射率低于芯的折射率。本发明特别用于制造用于光放大器的增益平坦器或者甚至用于制造其波长在光谱带上的线性响应滤波器。

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