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1. 发明申请

US20090022197A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090022197A1
公开(公告)日：2009-01-22
申请号：US12104756
申请日：2008-04-17
申请人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
发明人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
IPC分类号： H01L33/00 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
摘要翻译：半导体激光元件形成在公共基板上。在其他半导体激光元件的主表面上形成Au电镀。半导体激光器元件安装在具有焊料应用于Au镀层的封装上。在每个半导体激光元件的发光区域彼此相对的区域被指定为第一和第二区域。在每个半导体激光元件的第一和第二区域中，Au镀层的平均厚度不同。

2. 发明授权

US07653107B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07653107B2
公开(公告)日：2010-01-26
申请号：US12104756
申请日：2008-04-17
申请人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
发明人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
摘要翻译：半导体激光元件形成在公共基板上。在半导体激光元件的主表面上形成镀Au。半导体激光器元件安装在具有焊料应用于Au镀层的封装上。在每个半导体激光元件的发光区域彼此相对的区域被指定为第一和第二区域。在每个半导体激光元件的第一和第二区域中，Au镀层的平均厚度不同。

3. 发明授权

US07550673B2 Electrode pattern and wire bonding method 有权
标题翻译：电极图案和引线接合方法
公开(公告)号：US07550673B2
公开(公告)日：2009-06-23
申请号：US12042650
申请日：2008-03-05
申请人： Yoshihiro Hisa , Tsutomu Yamaguchi , Hideyuki Tanaka , Kazunori Matsuo
发明人： Yoshihiro Hisa , Tsutomu Yamaguchi , Hideyuki Tanaka , Kazunori Matsuo
IPC分类号： H01R4/18
CPC分类号： H01R43/0221 , H01L2924/01074 , H01L2924/01079 , Y10T29/49218
摘要： An electrode pattern for wire-bonding includes: a wire-bonding reference pattern indicating a reference position for determination of a wire-bonding position; and a wire-bonding recognition pattern. The distance between the reference position and a wire-bonding metal portion bonded to the electrode pattern and the distance between the wire-bonding recognition pattern and the wire-bonding metal portion satisfy predetermined relationships.
摘要翻译：用于引线接合的电极图案包括：指示用于确定引线接合位置的基准位置的引线接合基准图; 和引线键合识别图案。接合到电极图案的基准位置与引线键合金属部分之间的距离以及引线接合识别图案和引线接合金属部分之间的距离满足预定关系。

4. 发明申请

US20080230255A1 ELECTRODE PATTERN AND WIRE BONDING METHOD 有权
标题翻译：电极图案和线焊接方法
公开(公告)号：US20080230255A1
公开(公告)日：2008-09-25
申请号：US12042650
申请日：2008-03-05
申请人： Yoshihiro Hisa , Tsutomu Yamaguchi , Hideyuki Tanaka , Kazunori Matsuo
发明人： Yoshihiro Hisa , Tsutomu Yamaguchi , Hideyuki Tanaka , Kazunori Matsuo
IPC分类号： H01R43/00 , H01B5/00
CPC分类号： H01R43/0221 , H01L2924/01074 , H01L2924/01079 , Y10T29/49218
摘要： An electrode pattern for wire-bonding includes: a wire-bonding reference pattern indicating a reference position for determination of a wire-bonding position; and a wire-bonding recognition pattern. The distance between the reference position and a wire-bonding metal portion bonded to the electrode pattern and the distance between the wire-bonding recognition pattern and the wire-bonding metal portion satisfy predetermined relationships.
摘要翻译：用于引线接合的电极图案包括：指示用于确定引线接合位置的基准位置的引线接合基准图; 和引线键合识别图案。接合到电极图案的基准位置与引线键合金属部分之间的距离以及引线接合识别图案和引线接合金属部分之间的距离满足预定关系。

5. 发明授权

US07023891B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07023891B2
公开(公告)日：2006-04-04
申请号：US10427956
申请日：2003-05-02
申请人： Hideki Haneda , Go Sakaino , Yoshihiro Hisa
发明人： Hideki Haneda , Go Sakaino , Yoshihiro Hisa
IPC分类号： H01S5/20
CPC分类号： H01S5/227 , H01S5/0425 , H01S5/06226 , H01S5/2277
摘要： A semiconductor optical device which has a ridge structure includes a waveguide area between paired mesa trenches; first and second mount areas disposed outside the mesa trenches; a first spacer layer disposed in a first mount area and a second spacer layer disposed in a second mount area; a first metal layer electrically connected to an upper cladding layer in the waveguide area and extending from the waveguide area over the first mount area; and a second metal layer disposed over the second mount area. Thicknesses from a back surface of the semiconductor optical device to the first metal layer in the first mount area and to the second metal layer in the second mount area are both larger than thickness from the back surface to the first metal layer in the waveguide area.
摘要翻译：具有脊结构的半导体光学器件包括在成对台面沟槽之间的波导区域; 设置在台面沟槽外的第一和第二安装区域; 设置在第一安装区域中的第一间隔层和设置在第二安装区域中的第二间隔层; 第一金属层，电连接到波导区域中的上包层，并从第一安装区域上的波导区域延伸; 以及设置在所述第二安装区域上的第二金属层。从半导体光学器件的背面到第一安装区域中的第一金属层和第二安装区域中的第二金属层的厚度都大于波导区域中从背面到第一金属层的厚度。

6. 发明授权

US5659562A Semiconductor laser including embedded diffraction grating 失效
$Semiconductor laser including embedded diffraction grating$
标题翻译：半导体激光器包括嵌入式衍射光栅
公开(公告)号：US5659562A
公开(公告)日：1997-08-19
申请号：US522121
申请日：1995-08-31
申请人： Yoshihiro Hisa
发明人： Yoshihiro Hisa
IPC分类号： H01S3/1055 , H01S5/00 , H01S5/068 , H01S5/12 , H01S3/08 , H01S3/19
CPC分类号： H01S5/12 , H01S5/1225 , H01S5/1231
摘要： A semiconductor laser has a semiconductor substrate, an active layer disposed indirectly on the semiconductor substrate, a barrier layer disposed on the active layer having a larger band gap energy than the active layer, and an embedded diffraction grating of stripes of a semiconductor material, the stripes having a width in a resonator length direction, a length perpendicular to the resonator length direction, and a thickness, and are embedded in the barrier layer. The stripes have a constant pitch along the resonator length direction of the waveguide path, a constant thickness, and a width that changes in the resonator length direction or the width is constant and the thickness is changed.
摘要翻译：半导体激光器具有半导体衬底，间接设置在半导体衬底上的有源层，设置在有源层上的阻挡层具有比有源层更大的带隙能量，以及嵌入式半导体材料的衍射光栅，在谐振器长度方向上具有宽度的条纹，垂直于谐振器长度方向的长度和厚度，并且被嵌入在阻挡层中。条纹沿着波导路径的谐振器长度方向具有恒定的间距，恒定的厚度和谐振器长度方向或宽度变化恒定并且厚度改变的宽度。

7. 发明授权

US5551584A Method of producing lambda/4-shifted diffraction grating 失效
$Method of producing lambda/4-shifted diffraction grating$
标题翻译：制造λ/ 4位衍射光栅的方法
公开(公告)号：US5551584A
公开(公告)日：1996-09-03
申请号：US400960
申请日：1995-03-08
申请人： Yoshihiro Hisa
发明人： Yoshihiro Hisa
IPC分类号： G02B5/18 , B44C1/22
CPC分类号： G02B5/1857
摘要： In a method of producing a .lambda./4-shifted diffraction grating, an image reversible resist is deposited on a substrate, the image reversible resist is exposed to an interference pattern having an intensity so that the resist is not dissolved when developed, the resist on a first region of the substrate is exposed to an interference light pattern so that only portions of the resist exposed to crests of a light intensity pattern in the interference exposure process are dissolved when developed, the resist on the first region is developed, portions of the resist on the first region remaining after the developing are exposed so that image reversal occurs in these portions when subjected to image reversal baking, the resist on a second region of the substrate is exposed to an interference light pattern so that only portions of the resist exposed opposite crests of a light intensity pattern are image reversed when subjected to image reversal baking, the resist on the first and second regions is subjected to image reversal baking, and the resist on the first and second regions is exposed and developed to remove portions in which image reversal did not occur, thereby forming a mask for a .lambda./4-shifted diffraction grating to be formed in the substrate.
摘要翻译：在制造λ/ 4偏移的衍射光栅的方法中，将图像可逆抗蚀剂沉积在基板上，图像可逆抗蚀剂暴露于具有强度的干涉图案，使得显影时抗蚀剂不溶解，抗蚀剂衬底的第一区域被暴露于干涉光图案，使得只有暴露于干涉曝光工艺中的光强度图案的波峰的抗蚀剂的部分在显影时溶解，第一区域上的抗蚀剂被显影，在显影后残留的第一区域上的抗蚀剂被曝光，使得当进行图像反转烘烤时，在这些部分中发生图像反转，基板的第二区域上的抗蚀剂暴露于干涉光图案，使得仅有部分抗蚀剂暴露当经受图像反转烘烤时，光强度图案的相反的峰值在第一和第二区域的抗蚀剂上被图像反转 ns进行图像反转烘烤，并且第一和第二区域上的抗蚀剂被曝光和显影以除去其中不发生图像反转的部分，从而形成用于形成λ/ 4偏移的衍射光栅的掩模基质。

8. 发明申请

US20100093118A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20100093118A1
公开(公告)日：2010-04-15
申请号：US12634868
申请日：2009-12-10
申请人： Yoshihiro Hisa
发明人： Yoshihiro Hisa
IPC分类号： H01L21/28
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
摘要翻译：半导体激光元件形成在公共基板上。在半导体激光元件的主表面上形成镀Au。半导体激光器元件安装在具有焊料应用于Au镀层的封装上。在每个半导体激光元件的发光区域彼此相对的区域被指定为第一和第二区域。在每个半导体激光元件的第一和第二区域中，Au镀层的平均厚度不同。

9. 发明授权

US5410168A Infrared imaging device 失效
标题翻译：红外成像装置
公开(公告)号：US5410168A
公开(公告)日：1995-04-25
申请号：US143243
申请日：1993-10-29
申请人： Yoshihiro Hisa
发明人： Yoshihiro Hisa
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L33/00 , H01L29/78
CPC分类号： H01L27/14649 , H01L27/14609 , H01L27/14689
摘要： An infrared imaging device includes a first conductivity type first semiconductor layer having a small energy band gap, a first conductivity type second semiconductor layer have a larger energy band gap and disposed on the first semiconductor layer, a light receiving region of the second conductivity type in the second semiconductor layer and extending into the first semiconductor layer, a second conductivity type region in the second semiconductor layer spaced from the light receiving region, an insulating layer on the second semiconductor layer, and an MIS electrode on the insulating layer between the light receiving region and the second conductivity type region. Recombination of signal charges produced by incident light in the light receiving region and leakage current at the surface of the second semiconductor layer at the light receiving region are reduced. In addition, the numerical aperture of the light receiving region is increased. As a result, a highly reliable monolithic infrared imaging device in which photosensitivity and signal process efficiency are significantly improved is realized.
摘要翻译：红外成像装置包括具有小能带隙的第一导电类型的第一半导体层，第一导电类型的第二半导体层具有较大的能带隙并且设置在第一半导体层上，第二导电类型的光接收区域所述第二半导体层延伸到所述第一半导体层中，所述第二半导体层中的与所述受光区间隔开的第二导电类型区域，所述第二半导体层上的绝缘层，以及所述绝缘层上的MIS电极区域和第二导电类型区域。在光接收区域中由入射光产生的信号电荷和在光接收区域处的第二半导体层的表面处的泄漏电流的重组减少。此外，光接收区域的数值孔径增加。结果，实现了高度可靠的单片红外成像装置，其中光敏度和信号处理效率显着提高。

10. 发明授权

US07947517B2 Method of manufacturing semiconductor light-emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US07947517B2
公开(公告)日：2011-05-24
申请号：US12634868
申请日：2009-12-10
申请人： Yoshihiro Hisa
发明人： Yoshihiro Hisa
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
摘要翻译：半导体激光元件形成在公共基板上。在半导体激光元件的主表面上形成镀Au。半导体激光器元件安装在具有焊料应用于Au镀层的封装上。在每个半导体激光元件的发光区域彼此相对的区域被指定为第一和第二区域。在每个半导体激光元件的第一和第二区域中，Au镀层的平均厚度不同。

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