专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07968436B1 Low-K SiC copper diffusion barrier films 有权
标题翻译：低K SiC铜扩散阻挡膜
公开(公告)号：US07968436B1
公开(公告)日：2011-06-28
申请号：US12497322
申请日：2009-07-02
申请人： Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
发明人： Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
IPC分类号： H01L21/00
CPC分类号： H01L21/76832 , H01L21/3148 , H01L21/318 , H01L21/76834 , Y10S257/914 , Y10S438/931
摘要： Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.
摘要翻译：具有低介电常数的铜扩散阻挡膜适用于各种铜/金属间电介质集成方案。根据本发明的铜扩散阻挡膜由一个或多个碳化硅层组成，至少一个碳化硅层具有至少40％碳（C）的组成，例如约45-60％碳（C）。膜的高碳含量层将具有其中C与Si的比率大于2:1的组成; 或> 3：1; 或> 4：1; 或> 5.1。高碳含量铜扩散阻挡膜相对于常规阻挡材料具有降低的有效k。

2. 发明授权

US07573061B1 Low-k SiC copper diffusion barrier films 有权
标题翻译：低k SiC铜扩散阻挡膜
公开(公告)号：US07573061B1
公开(公告)日：2009-08-11
申请号：US11893490
申请日：2007-08-15
申请人： Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
发明人： Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L21/76832 , H01L21/3148 , H01L21/318 , H01L21/76834 , Y10S257/914 , Y10S438/931
摘要： Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.
摘要翻译：具有低介电常数的铜扩散阻挡膜适用于各种铜/金属间电介质集成方案。根据本发明的铜扩散阻挡膜由一个或多个碳化硅层组成，至少一个碳化硅层具有至少40％碳（C）的组成，例如约45-60％碳（C）。膜的高碳含量层将具有其中C与Si的比率大于2:1的组成; 或> 3：1; 或> 4：1; 或> 5.1。高碳含量铜扩散阻挡膜相对于常规阻挡材料具有降低的有效k。

3. 发明授权

US07282438B1 Low-k SiC copper diffusion barrier films 有权
标题翻译：低k SiC铜扩散阻挡膜
公开(公告)号：US07282438B1
公开(公告)日：2007-10-16
申请号：US10869474
申请日：2004-06-15
申请人： Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
发明人： Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
IPC分类号： H01L21/4763
CPC分类号： H01L21/76832 , H01L21/3148 , H01L21/318 , H01L21/76834 , Y10S257/914 , Y10S438/931
摘要： Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.
摘要翻译：具有低介电常数的铜扩散阻挡膜适用于各种铜/金属间电介质集成方案。根据本发明的铜扩散阻挡膜由一个或多个碳化硅层组成，至少一个碳化硅层具有至少40％碳（C）的组成，例如约45-60％碳（C）。膜的高碳含量层将具有其中C与Si的比率大于2:1的组成; 或> 3：1 或> 4：1; 或> 5.1。高碳含量铜扩散阻挡膜相对于常规阻挡材料具有降低的有效k。

4. 发明授权

US07239017B1 Low-k B-doped SiC copper diffusion barrier films 有权
标题翻译：低k B掺杂SiC铜扩散阻挡膜
公开(公告)号：US07239017B1
公开(公告)日：2007-07-03
申请号：US10915117
申请日：2004-08-09
申请人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
发明人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
摘要翻译：本发明提供一种低介电常数铜扩散阻挡膜，其至少部分由适用于半导体器件的硼掺杂碳化硅构成，以及制造这种膜的方法。在大气湿度的存在下，铜扩散阻挡层保持稳定的介电常数小于4.5。

5. 发明授权

US07420275B1 Boron-doped SIC copper diffusion barrier films 有权
标题翻译：硼掺杂SIC铜扩散阻挡膜
公开(公告)号：US07420275B1
公开(公告)日：2008-09-02
申请号：US11373847
申请日：2006-03-08
申请人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
发明人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/325 , H01L21/02274 , H01L21/3148 , H01L21/76832 , H01L21/76834
摘要： Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m2, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.
摘要翻译：具有硼掺杂碳化硅层的铜扩散阻挡膜具有至少25％硼原子量的层组成，具有半导体器件集成方案的优点。这些膜具有至少10比1的对碳掺杂氧化物的积分值的蚀刻选择性，可以以至少20J / m 2的粘附能力粘附到铜上，并且可以保持有效的介电常数在大气湿度的情况下小于4.5。这些电影适用于广泛的VLSI和ULSI结构和设备。

6. 发明申请

US20060019486A1 Novel film for copper diffusion barrier 有权
标题翻译：铜扩散屏障的新型膜
公开(公告)号：US20060019486A1
公开(公告)日：2006-01-26
申请号：US11234808
申请日：2005-09-23
申请人： Yongsik Yu , Karen Billington , Robert Hepburn , Michael Carris , William Crew
发明人： Yongsik Yu , Karen Billington , Robert Hepburn , Michael Carris , William Crew
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
摘要翻译：本发明提供一种适用于半导体器件的低介电常数铜扩散阻挡膜及其制造方法。膜的一些实施例由掺杂有硼的硅基材料形成。至少部分地由氮化硼形成其它实施例。一些这样的实施方案包括包含氧和/或碳的防潮膜。在大气湿度的存在下，铜扩散阻挡层的优选实施例保持小于4.5的稳定介电常数。

7. 发明授权

US07842604B1 Low-k b-doped SiC copper diffusion barrier films 有权
标题翻译：低k b掺杂SiC铜扩散阻挡膜
公开(公告)号：US07842604B1
公开(公告)日：2010-11-30
申请号：US11805356
申请日：2007-05-22
申请人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
发明人： Yongsik Yu , Atul Gupta , Karen Billington , Michael Carris , William Crew , Thomas W. Mountsier
IPC分类号： H01L21/4763
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
摘要翻译：本发明提供一种低介电常数铜扩散阻挡膜，其至少部分由适用于半导体器件的硼掺杂碳化硅构成，以及制造这种膜的方法。在大气湿度的存在下，铜扩散阻挡层保持稳定的介电常数小于4.5。

8. 发明授权

US07163889B2 Film for copper diffusion barrier 有权
标题翻译：铜扩散屏蔽膜
公开(公告)号：US07163889B2
公开(公告)日：2007-01-16
申请号：US11234808
申请日：2005-09-23
申请人： Yongsik Yu , Karen Billington , Robert Hepburn , Michael Carris , William Crew
发明人： Yongsik Yu , Karen Billington , Robert Hepburn , Michael Carris , William Crew
IPC分类号： H01L21/4763
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
摘要翻译：本发明提供一种适用于半导体器件的低介电常数铜扩散阻挡膜及其制造方法。膜的一些实施例由掺杂有硼的硅基材料形成。至少部分地由氮化硼形成其它实施例。一些这样的实施方案包括包含氧和/或碳的防潮膜。在大气湿度的存在下，铜扩散阻挡层的优选实施例保持小于4.5的稳定介电常数。

9. 发明授权

US06967405B1 Film for copper diffusion barrier 有权
标题翻译：铜扩散屏蔽膜
公开(公告)号：US06967405B1
公开(公告)日：2005-11-22
申请号：US10670660
申请日：2003-09-24
申请人： Yongsik Yu , Karen Billington , Robert Hepburn , Michael Carris , William Crew
发明人： Yongsik Yu , Karen Billington , Robert Hepburn , Michael Carris , William Crew
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
摘要翻译：本发明提供一种适用于半导体器件的低介电常数铜扩散阻挡膜及其制造方法。膜的一些实施例由掺杂有硼的硅基材料形成。至少部分地由氮化硼形成其它实施例。一些这样的实施方案包括包含氧和/或碳的防潮膜。在大气湿度的存在下，铜扩散阻挡层的优选实施例保持小于4.5的稳定介电常数。

10. 发明申请

US20110045610A1 UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于在半导体加工中含碳低K电介质修复的紫外线处理
公开(公告)号：US20110045610A1
公开(公告)日：2011-02-24
申请号：US12940324
申请日：2010-11-05
申请人： Bart van Schravendijk , William Crew
发明人： Bart van Schravendijk , William Crew
IPC分类号： H01L21/26
CPC分类号： H01L21/76814 , H01L21/3105 , H01L21/76825
摘要： A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.
摘要翻译：一种用于紫外线（UV）处理含碳低k电介质的方法可以进行过程诱导的损伤修复。该方法特别适用于镶嵌加工的上下文。一种方法提供了通过在衬底上沉积含碳的低k电介质层并在低k电介质层中形成沟槽来形成半导体器件，所述沟槽具有以底部结束的侧壁。然后将沟槽暴露于UV辐射和任选的-CH 3基团的气相源，以修复由沟槽形成过程（通常为蚀刻，灰化）引起的沟槽侧壁和底部的含碳低k材料的损伤，和湿或干洗）。可以使用具有或不具有-CH 3基团的气相源的类似处理来修复在随后的平坦化操作中引起的损伤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式