专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130092982A1 PARTIAL BURIED CHANNEL TRANSFER DEVICE FOR IMAGE SENSORS 有权
标题翻译：用于图像传感器的部分通道传输设备
公开(公告)号：US20130092982A1
公开(公告)日：2013-04-18
申请号：US13273026
申请日：2011-10-13
申请人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/18 , H01L31/101
CPC分类号： H01L27/14616 , H01L27/14689
摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
摘要翻译：包括感光元件，浮动扩散区域和转印装置的图像传感器像素的实施例。感光元件设置在基板层中，用于响应于光积累图像电荷。浮动扩散区域设置在衬底层中以从感光元件接收图像电荷。转移装置设置在感光元件和浮动扩散区域之间以选择性地将图像电荷从感光元件转移到浮动扩散区域。传输装置包括掩埋沟道器件，其包括设置在掩埋沟道掺杂区域上的掩埋沟道栅极。转移装置还包括表面通道装置，其包括设置在表面通道区域上的表面通道门。表面通道装置与掩埋通道装置串联。表面沟道栅极具有与掩埋沟道栅极相反的极性。

2. 发明申请

US20130207212A1 LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS 有权
标题翻译：背光照明成像传感器中的侧光
公开(公告)号：US20130207212A1
公开(公告)日：2013-08-15
申请号：US13370085
申请日：2012-02-09
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L27/1462 , H01L27/14623 , H01L27/1464 , H01L27/14685
摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
摘要翻译：背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。半导体层具有前表面和背面。半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。像素阵列被定位成接收穿过半导体层的背面的外部入射光。半导体层还包括设置在传感器阵列区域外侧的半导体层的外围电路区域中的发光元件。沟槽设置在光感测元件和发光元件之间的半导体层中。当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

3. 发明申请

US20140048897A1 PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER 审中-公开
标题翻译： PIXEL带负电荷的浅层隔离（STI）衬垫
公开(公告)号：US20140048897A1
公开(公告)日：2014-02-20
申请号：US13587811
申请日：2012-08-16
申请人： Yin Qian , Hsin-Chih Tai , Gang Chen , Duli Mao , Vincent Venezia , Howard E. Rhodes
发明人： Yin Qian , Hsin-Chih Tai , Gang Chen , Duli Mao , Vincent Venezia , Howard E. Rhodes
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L27/1463 , H01L27/14689
摘要： Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.
摘要翻译：包括具有形成在基板的表面中或附近的前表面和感光区域的基板的像素的实施例。在与感光区域相邻的基板的前表面中形成隔离沟槽。隔离沟槽包括具有底部和侧壁的沟槽，形成在底部和侧壁上的钝化层，以及用于填充未被钝化层填充的沟槽部分的填料。

4. 发明授权

US09698185B2 Partial buried channel transfer device for image sensors 有权
公开(公告)号：US09698185B2
公开(公告)日：2017-07-04
申请号：US13273026
申请日：2011-10-13
申请人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/062 , H01L31/101 , H01L31/113 , H01L27/146
CPC分类号： H01L27/14616 , H01L27/14689
摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

5. 发明授权

US08946795B2 Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter 有权
标题翻译：背面照明（BSI）图像传感器，减少了闪光和电快门
公开(公告)号：US08946795B2
公开(公告)日：2015-02-03
申请号：US13050285
申请日：2011-03-17
申请人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L27/14656 , H01L27/14603 , H01L27/14689
摘要： Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
摘要翻译：包括在基板的表面形成的感光区域和形成在与光敏区域一定距离的基板的表面中的溢流漏极的像素的实施例，溢流漏极的电偏压是可变的和可控的。包括形成在基板的表面中的感光区域的像素的实施例，耦合到感光区域的源极跟随器晶体管，包括漏极的源极跟随器晶体管以及将光敏区域耦合到源极的漏极的掺杂桥更低的晶体管。

6. 发明申请

US20120235212A1 BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH REDUCED BLOOMING AND ELECTRICAL SHUTTER 有权
标题翻译：背光照明（BSI）图像传感器，具有降低成色和电动快门
公开(公告)号：US20120235212A1
公开(公告)日：2012-09-20
申请号：US13050285
申请日：2011-03-17
申请人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/112 , H01L31/101
CPC分类号： H01L27/14656 , H01L27/14603 , H01L27/14689
摘要： Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
摘要翻译：包括在基板的表面形成的感光区域和形成在与光敏区域一定距离的基板的表面中的溢流漏极的像素的实施例，溢流漏极的电偏压是可变的和可控的。包括形成在基板的表面中的感光区域的像素的实施例，耦合到感光区域的源极跟随器晶体管，包括漏极的源极跟随器晶体管以及将光敏区域耦合到源极的漏极的掺杂桥更低的晶体管。

7. 发明授权

US08772898B2 Lateral light shield in backside illuminated imaging sensors 有权
标题翻译：背面照明成像传感器的侧面防护罩
公开(公告)号：US08772898B2
公开(公告)日：2014-07-08
申请号：US13370085
申请日：2012-02-09
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
IPC分类号： H01L31/0216
CPC分类号： H01L27/1462 , H01L27/14623 , H01L27/1464 , H01L27/14685
摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
摘要翻译：背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。半导体层具有前表面和背面。半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。像素阵列被定位成接收穿过半导体层的背面的外部入射光。半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。沟槽设置在光感测元件和发光元件之间的半导体层中。当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

8. 发明授权

US08569856B2 Pad design for circuit under pad in semiconductor devices 有权
标题翻译：垫片设计用于半导体器件衬底下的电路
公开(公告)号：US08569856B2
公开(公告)日：2013-10-29
申请号：US13288731
申请日：2011-11-03
申请人： Yin Qian , Hsin-Chih Tai , Keh-Chiang Ku , Vincent Venezia , Duli Mao , Wei Zheng , Howard E. Rhodes
发明人： Yin Qian , Hsin-Chih Tai , Keh-Chiang Ku , Vincent Venezia , Duli Mao , Wei Zheng , Howard E. Rhodes
IPC分类号： H01L21/00
CPC分类号： H01L23/481 , H01L21/6835 , H01L23/522 , H01L24/05 , H01L27/14636 , H01L27/1464 , H01L2221/6835 , H01L2224/05548 , H01L2224/05553 , H01L2224/05567 , H01L2924/00014 , H01L2924/12043 , H01L2224/05552 , H01L2924/00
摘要： Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.
摘要翻译：半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。包括接合焊盘的导电层设置在绝缘层上。导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。贯穿硅通孔焊盘的位置是接受硅通孔。

9. 发明授权

US08405748B2 CMOS image sensor with improved photodiode area allocation 有权
标题翻译： CMOS图像传感器具有改进的光电二极管面积分配
公开(公告)号：US08405748B2
公开(公告)日：2013-03-26
申请号：US12837870
申请日：2010-07-16
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H04N3/14
CPC分类号： H04N5/3696 , H01L27/14621 , H01L27/1464 , H04N9/04
摘要： Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.
摘要翻译：包括包括多个宏像素的像素阵列的装置的实施例。每个宏像素包括一对第一像素，每个第一像素包括用于第一颜色的滤色器，第一颜色是像素最敏感的一个，第二像素包括用于第二颜色的滤色器，第二颜色是像素是最不灵敏的，并且第三像素包括用于第三颜色的滤色器，第三颜色是像素在最不灵敏和最敏感之间具有灵敏度的一个，其中第一像素每个占据较大比例的发光元件，大小像素的收集区域比第二像素还是第三像素。公开和要求保护相应的过程和系统实施例。

10. 发明授权

US08338856B2 Backside illuminated image sensor with stressed film 有权
标题翻译：具有应力膜的背面照明图像传感器
公开(公告)号：US08338856B2
公开(公告)日：2012-12-25
申请号：US12853803
申请日：2010-08-10
申请人： Hsin-Chih Tai , Howard E. Rhodes , Wei Zheng , Vincent Venezia , Yin Qian , Duli Mao
发明人： Hsin-Chih Tai , Howard E. Rhodes , Wei Zheng , Vincent Venezia , Yin Qian , Duli Mao
IPC分类号： H01L31/0328
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638
摘要： A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.
摘要翻译：背面照明（BSI）互补金属氧化物半导体（CMOS）图像传感器包括设置在半导体层和应力调整层内的感光区域。感光区域对入射到BSI CMOS图像传感器背面的光敏感，以收集图像电荷。应力调整层设置在半导体层的背面，以建立一种应力特性，该应力特性促使光生电荷载流子迁移到光敏区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式