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1. 发明专利

SG10201905930XA POST CHEMICAL MECHANICAL PLANARIZATION (CMP) CLEANING 未知
公开(公告)号：SG10201905930XA
公开(公告)日：2020-01-30
申请号：SG10201905930X
申请日：2019-06-26
申请人： VERSUM MATERIALS US LLC
发明人： DNYANESH C TAMBOLI
摘要： A post Chemical Mechanical Planarization(CMP) cleaning composition comprising:at least one organic acid or salts thereof selected from the group comprising dicarboxylic acid, hydroxycarboxylic acid, polycarboxylic acid, salts thereof, and combinations thereof;a fluoride compound selected from the group comprising hydrofluoric acid, ammonium fluoride, ammonium bifluoride, quaternary ammonium fluoride and combinations thereof;at least one polymeric additive selected from a group comprising anionic polymer, non-ionic polymer and cationic polymer and combinations thereof; and water;optionallya surfactant selected from the group consisting of non-ionic surfactants, anionic surfactants, cationic surfactants, ampholytic surfactants, and mixtures thereof;corrosion inhibitor;biological preservative;defoaming agent; andpH adjusting agent;wherein the composition has a pH of between 1 to 7.A method of post Chemical Mechanical Planarization (CMP) cleaning a semiconductor wafer comprising at least one surface selected from the group consisting of metallic film, dielectric film, and combinations thereof.

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