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1. 发明申请

WO2011071573A2 AMPLIFIERS WITH DEPLETION AND ENHANCEMENT MODE THIN FILM TRANSISTORS AND RELATED METHODS 审中-公开
标题翻译：放大器和增强型薄膜晶体管放大器及相关方法
公开(公告)号：WO2011071573A2
公开(公告)日：2011-06-16
申请号：PCT/US2010047336
申请日：2010-08-31
申请人： UNIV ARIZONA , VENUGOPAL SAMEER M , DEY ARITRA , ALLEE DAVID R
发明人： VENUGOPAL SAMEER M , DEY ARITRA , ALLEE DAVID R
IPC分类号： H03F1/22 , H03F3/16
CPC分类号： H03F3/16 , H03F1/223 , Y10T29/49169
摘要： In one embodiment, an apparatus comprises an integrated circuit comprising an amplifier. The amplifier can comprise a first transistor over a substrate of the integrated circuit, and a second transistor over the substrate and coupled to the first transistor. The first transistor can comprise a first source terminal, a first drain terminal, and a first gate terminal. The second transistor can comprise a second source terminal, a second drain terminal, and a second gate terminal. An input node of the amplifier can be coupled to the second transistor, such as to the second gate terminal. An output node of the amplifier can be coupled between the first and second transistors, such as by coupling the second drain terminal and the first source terminal together at the output node. In the same or other embodiments, the first and second transistors comprise thin film transistors, and the substrate comprises a flexible substrate. The first transistor comprises a threshold voltage alterable from an initial threshold voltage value to a target threshold voltage value, and the first gate terminal the first source terminal are configured to be selectively coupled together. Other examples and embodiments are described herein.
摘要翻译：在一个实施例中，一种装置包括包括放大器的集成电路。放大器可以包括在集成电路的衬底上的第一晶体管，以及位于衬底上并耦合到第一晶体管的第二晶体管。第一晶体管可以包括第一源极端子，第一漏极端子和第一栅极端子。第二晶体管可以包括第二源极端子，第二漏极端子和第二栅极端子。放大器的输入节点可以耦合到第二晶体管，例如耦合到第二栅极端子。放大器的输出节点可以耦合在第一和第二晶体管之间，例如通过在输出节点处将第二漏极端子和第一源极端子耦合在一起。在相同或其它实施例中，第一和第二晶体管包括薄膜晶体管，并且衬底包括柔性衬底。第一晶体管包括可从初始阈值电压值改变到目标阈值电压值的阈值电压，第一栅极端子被配置为选择性地耦合在一起。本文描述了其它示例和实施例。

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