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    • 2. 发明专利
    • BELLOWS PUMP
    • JPH11159463A
    • 1999-06-15
    • JP34405797
    • 1997-11-28
    • ULVAC CORP
    • MURAKAMI YOSHIOAIKAWA JUNICHIKANEDA TOSHINOBUYUYAMA JUNPEI
    • F04B43/08
    • PROBLEM TO BE SOLVED: To provide a dry pump which is small-sized, light in weight, has low noise, and is capable of operating for a long time and can be changed to an oil-sealed rotary vacuum pump. SOLUTION: A pump unit is made by mounting an intake valve and an exhaust valve which are opened and closed by synchronizing with enlargement/ reduction of content volume on a urethane rubber bellows 10 capable of enlarging/reducing content volume by a dodecahedron structure formed by a four-angle cylindrical main body 11 having both-side surfaces and a bottom surface which is bent into an angle to the inside and four-angle conical tip parts 21a, 21b which close both the ends and a bellows type vacuum pump is made by serially connecting the 4 units. When a bellows on an upstream side 101 is in an enlarging period of content volume and the exhaust valve 171 is open, a bellows on a downstream side 102 is in a reducing period of content volume and the intake valve 162 is open. When the bellows on the upstream side 101 is in the reducing period of content volume, the bellows 102 is driven so as to be reverse.
    • 8. 发明专利
    • MANUFACTURE OF SUPERCONDUCTING ELEMENT
    • JPH06132576A
    • 1994-05-13
    • JP28002692
    • 1992-10-19
    • ULVAC CORP
    • SUGAYA YUKIOHATANAKA HIROSAKUKANEDA TOSHINOBU
    • H01L39/24
    • PURPOSE:To inhibit a resistance film from being peeled during a process of forming an element and after the element is formed by a method wherein the resistance film is formed not on the surface of a layer insulating film but in the interlayer insulating film in such a way that it is fitted in the insulating film. CONSTITUTION:A layer insulator film 11 is formed on a silicon substrate 10 and a pattern formation resist layer 12 to decide a resistance film pattern is formed on the film 11 in a thickness of about 15000Angstrom . Then, the substrate 10 provided with the film 11 and the layer 12 is put in a reactive ion etching device and the film 11 is dug down to a depth of 400Angstrom . Then, the sample is moved to a deposition device and a Pd film 13 is formed in a thickness of 400Angstrom . Lastly, the layer 12 is lifted-off, whereby the resistance film 13 having a desired pattern is obtained in a state that it is buried in the film 11. Moreover, a second layer insulator film 14 is formed thereon in the same thickness as that of the film 11 and a contact hole and a superconducting film are formed.