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1. 发明专利

JPS5930794A Melting crucible device for pulling up single crystal 失效
标题翻译：用于拉出单晶的熔融可变装置
公开(公告)号：JPS5930794A
公开(公告)日：1984-02-18
申请号：JP13834482
申请日：1982-08-09
申请人： Toshiba Ceramics Co Ltd
发明人： YAMAZAKI HIROSHI , HOSHINA KATSUMI , ABE SHIGERU
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06 , C30B29/44 , H01L21/208
CPC分类号： C30B15/10
摘要： PURPOSE:To prevent the inside of the graphite crucible of the titled melting crucible device from being silicified, being oxidized or sticking to the quartz crucible fixed in the graphite crucible by interposing a separating layer between the crucibles. CONSTITUTION:A separating layer 4 of 5mm. thickness made of powdered silicon carbide is interposed between a graphite crucible 1 and a quartz glass crucible 2 fixed in the crucible 1. Polycrystalline Si is filled into the crucible 2 and melted at 1,450 deg.C, and a single crystal is pulled up from the melt with a seed crystal and cooled. Even after repeating the operations twice, the crucible 2 undergoes no deformation and no reaction. It is preferable that said silicon carbide powder is as pure as possible so as to prevent from unfavorable influence on an Si single crystal. The preferred thickness of the layer 4 is 3-10mm.. In the figure, a symbol 5 is a ringlike plate.
摘要翻译：目的：为了防止标称的熔融坩埚装置的石墨坩埚的内部被硅化，通过在坩埚之间插入分离层而被氧化或粘附到固定在石墨坩埚中的石英坩埚。构成：分隔层4为5mm。将由碳化硅粉末制成的厚度插入石墨坩埚1和固定在坩埚1中的石英玻璃坩埚2之间。将多晶硅填充到坩埚2中并在1450℃下熔融，并从单晶从用晶种熔化并冷却。即使在重复操作两次之后，坩埚2也不发生变形而没有反应。所述碳化硅粉末优选为尽可能纯的，以防止对Si单晶的不利影响。层4的优选厚度为3-10mm。在图中，符号5是环状板。

2. 发明专利

JPS5756309A Carbon substrate for coating silicon carbide 失效
标题翻译：用于涂覆碳化硅的碳质基材
公开(公告)号：JPS5756309A
公开(公告)日：1982-04-03
申请号：JP12993880
申请日：1980-09-17
申请人： Toshiba Ceramics Co Ltd
发明人： YAMAZAKI HIROSHI , HOSHINA KATSUMI , UEJIMA NOBUYUKI , SASAKI YASUMI
IPC分类号： C01B31/02 , C04B35/56
摘要： PURPOSE: To obtain improved spalling resistance and to prevent the occurrence of cracks and peeling by specifying the porosity and pore size of a carbon substrate for coating silicon carbide.
CONSTITUTION: A carbon substrate having 5W30% porosity and contg. no pore having ≥100μm size and 0.04W0.1cc/g pores having 0.1W10μm size measured with a mercury porosimeter is used. When this substrate is coated with silicon carbide, a structure composed of an outer surface layer 1 of silicon carbide alone, an intermediate layer 2 of a mixture of silicon carbide with carbon, and a carbon substrate layer 3 is obtd., and by using said carbon substrate as the layer 3, the layer 2 is formed in a uniform thickness, and the layer 1 is also formed in a uniform thickness almost in parallel with the layer 2.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：通过确定用于涂覆碳化硅的碳基板的孔隙率和孔径，获得改善的耐剥离性并防止产生裂缝和剥离。构成：具有5-30％孔隙率的碳衬底，使用具有≥100μm尺寸的孔和使用用水银孔率计测量的具有0.1-10μm尺寸的0.04-0.1cc / g孔。当该基板涂覆有碳化硅时，由单独的碳化硅外表层1，碳化硅与碳的混合物的中间层2和碳基底层3组成的结构是可以实现的，并且通过使用所述碳基板作为层3，层2形成为均匀的厚度，层1也形成为与层2几乎平行的均匀厚度。

3. 发明专利

JPS58223689A Supporting member for quartz crucible 失效
标题翻译：支持QUARTZ CRUCIBLE的会员
公开(公告)号：JPS58223689A
公开(公告)日：1983-12-26
申请号：JP10247382
申请日：1982-06-15
申请人： Toshiba Ceramics Co Ltd
发明人： YAMAZAKI HIROSHI , HOSHINA KATSUMI , ABE SHIGERU
IPC分类号： C30B15/10 , C30B15/12 , H01L21/208
CPC分类号： C30B15/10
摘要： PURPOSE:A supporting member for a quartz crucible, prepared by engaging divided graphite frames with a graphite receiving holder supporting the frames with many heat-resistant rotating bodies, scarcely damaging the graphite frames, and reusable repeatedly many times. CONSTITUTION:A graphite frame 1 is assembled to form a crucible from three divided bodies (1a), (1b) and (1c), and many carbon balls 3,... having almost the recess in the top central part of the graphite receiving holder 2. A quartz crucible is engaged with the interior of the graphite frame 1, and a rotating shaft is engaged with the bottom recess of the receiving holder 2 to support the resultant supporting member for the quartz crucible and the quartz crucible rotatably in a chamber. A silicon raw material is then introduced into the quartz crucible and molten, and a seed crystal is then dipped in the molten silicon. The seed crystal is pulled up while rotating the seed crystal and the rotating body in the opposite direction. After pulling up a single crystal silicon ingot of a given length, the interior of the chamber is cooled. The above-mentioned procedures are repeated to prepare the aimed single crystal ingot.
摘要翻译：目的：一种用于石英坩埚的支撑构件，其通过将分开的石墨框架与具有许多耐热旋转体支撑框架的石墨接收保持器接合而制备，几乎不损坏石墨框架，并且可重复使用多次。构成：石墨框架1组装成由三个分隔体（1a），（1b）和（1c）形成坩埚，并且许多碳球3 ...几乎具有在石墨的顶部中心部分中的凹部将石英坩埚与石墨框架1的内部接合，并且旋转轴与容纳保持器2的底部凹部接合，以将所得的用于石英坩埚的支撑构件和石英坩埚可旋转地支撑在腔室。然后将硅原料引入石英坩埚中并熔融，然后将晶种浸入熔融硅中。在将籽晶和旋转体沿相反方向旋转的同时拉起籽晶。在拉出给定长度的单晶硅锭后，将室内冷却。重复上述步骤以制备目标单晶锭。

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