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1. 发明授权

US08994130B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US08994130B2
公开(公告)日：2015-03-31
申请号：US13145082
申请日：2010-01-28
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
摘要翻译：磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域，并且其中可以切换磁化。第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。

2. 发明授权

US08592930B2 Magnetic memory element, magnetic memory and initializing method 有权
标题翻译：磁记忆元件，磁记忆和初始化方法
公开(公告)号：US08592930B2
公开(公告)日：2013-11-26
申请号：US13504071
申请日：2010-10-21
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/0808 , G11C2013/0083 , H01L27/228
摘要： A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.
摘要翻译：磁存储元件包括：第一磁化自由层; 非磁性层; 参考层; 第一磁化固定层组; 和第一阻挡层。第一磁化自由层由具有垂直磁各向异性的铁磁材料组成，并且包括第一磁化固定区域，第二磁化固定区域和无磁化区域。非磁性层设置在第一磁化自由层附近。参考层由铁磁材料组成并设置在非磁性层上。第一磁化固定层组设置在第一磁化固定区附近。第一阻挡层被设置在第一磁化固定层组和第一磁化固定区之间或第一磁化固定层组中。

3. 发明授权

US08514616B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US08514616B2
公开(公告)日：2013-08-20
申请号：US13201815
申请日：2010-02-15
申请人： Nobuyuki Ishiwata , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki
发明人： Nobuyuki Ishiwata , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.
摘要翻译：磁阻效应元件包括：无磁化层; 与磁化自由层相邻设置的非磁性插入层; 设置在非磁性插入层附近并相对于非磁性插入层与无磁化层相反的磁性插入层; 与磁性插入层相邻地设置并与非磁性插入层相对于磁性插入层相对设置的间隔层; 以及第一磁化固定层，其相对于间隔层设置成与间隔层相邻并且与磁性插入层相对。磁化自由层和第一磁化固定层在大致垂直于膜表面的方向上具有磁化分量。磁化自由层包括两个磁化固定部分和布置在两个磁化固定部分之间的畴壁运动部分。两个磁化固定部分中的一个的磁化和两个磁化固定部分中的另一个的磁化被固定为大致垂直于膜表面的方向彼此大致反平行。畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

4. 发明授权

US08379429B2 Domain wall motion element and magnetic random access memory 有权
标题翻译：域壁运动元件和磁性随机存取存储器
公开(公告)号：US08379429B2
公开(公告)日：2013-02-19
申请号：US12864056
申请日：2009-01-13
申请人： Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara , Shunsuke Fukami
发明人： Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara , Shunsuke Fukami
IPC分类号： G11C19/00
CPC分类号： G11C19/0841 , B82Y25/00 , G11B5/64 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C27/00 , G11C2211/5615 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/11 , Y10T428/1136 , Y10T428/1143
摘要： A domain wall motion element has a magnetic recording layer 10 that is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layer 10 has: a pair of end regions 11-1 and 11-2 whose magnetization directions are fixed; and a center region 12 sandwiched between the pair of end regions 11-1 and 11-2, in which the domain wall. DW moves. A first trapping site TS1 by which the domain wall DW is trapped is formed at a boundary between the end region 11-1, 11-2 and the center region 12. Furthermore, at least one second trapping site TS2 by which the domain wall DW is trapped is formed within the center region 12.
摘要翻译：畴壁运动元件具有由铁磁膜形成并具有畴壁DW的磁记录层10。磁记录层10具有：其磁化方向固定的一对端区11-1和11-2; 以及夹在所述一对端部区域11-1和11-2之间的中心区域12，其中所述畴壁。 DW移动。在端区域11-1,11-2和中心区域12之间的边界处形成有第一陷阱位置TS1，其中畴壁DW被捕获。此外，至少一个第二陷阱位置TS2，其中域壁DW 被捕获在中心区域12内形成。

5. 发明授权

US08120950B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08120950B2
公开(公告)日：2012-02-21
申请号：US12920194
申请日：2009-03-05
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
IPC分类号： G11C11/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip together with the first magnetic random access memory. The first memory cell is a current-induced domain wall motion type MRAM and stores data based on a domain wall position of a magnetization free layer. A layer that a write current flows is different from a layer that a read current flows. The second memory cell is a current-induced magnetic field writing type MRAM and stores data based on a magnetic field induced by a write current.
摘要翻译：半导体器件包括：第一磁性随机存取存储器，包括第一存储单元和第二磁性随机存取存储器，所述第二磁性随机存取存储器包括以比第一存储单元更高的速度工作的第二存储单元，并且与第一磁性随机访问内存第一存储单元是电流感应畴壁运动型MRAM，并存储基于无磁化层的畴壁位置的数据。写入电流流动的层与读取电流流动的层不同。第二存储单元是电流感应磁场写入型MRAM，并且存储基于由写入电流引起的磁场的数据。

6. 发明申请

US20110298067A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20110298067A1
公开(公告)日：2011-12-08
申请号：US13201815
申请日：2010-02-15
申请人： Nobuyuki Ishiwata , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki
发明人： Nobuyuki Ishiwata , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki
IPC分类号： H01L27/22 , H01L43/02
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.
摘要翻译：磁阻效应元件包括：无磁化层; 与磁化自由层相邻设置的非磁性插入层; 设置在非磁性插入层附近并相对于非磁性插入层与无磁化层相反的磁性插入层; 与磁性插入层相邻地设置并与非磁性插入层相对于磁性插入层相对设置的间隔层; 以及第一磁化固定层，其相对于间隔层设置成与间隔层相邻并且与磁性插入层相对。磁化自由层和第一磁化固定层在大致垂直于膜表面的方向上具有磁化分量。磁化自由层包括两个磁化固定部分和布置在两个磁化固定部分之间的畴壁运动部分。两个磁化固定部分中的一个的磁化和两个磁化固定部分中的另一个的磁化被固定为大致垂直于膜表面的方向彼此大致反平行。畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

7. 发明申请

US20100237449A1 MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁电元件和磁性随机存取存储器
公开(公告)号：US20100237449A1
公开(公告)日：2010-09-23
申请号：US12739990
申请日：2008-10-28
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.
摘要翻译：磁阻元件设置有第一磁化自由层; 第二磁化自由层; 邻近所述第二磁化自由层设置的非磁性层; 以及在所述第二磁化自由层的相对侧上邻近所述第二磁化自由层设置的第一磁化固定层。第一磁化自由层由铁磁材料形成，并且在厚度方向上具有磁各向异性。另一方面，第二磁化自由层和第一磁化固定层由铁磁材料形成，并且在面内方向上具有磁各向异性。第一磁化自由层包括：具有固定磁化强度的第一磁化固定区; 具有固定磁化强度的第二磁化固定区域; 以及与第一和第二磁化固定区域连接并具有可逆磁化强度的无磁化区域。磁化自由区和第二磁化自由层磁耦合。此外，无磁化区域的质心和第二磁化自由层的质心在特定的面内方向上移位。

8. 发明申请

US20100214826A1 MAGNETIC RANDOM ACCESS MEMORY, WRITE METHOD THEREFOR, AND MAGNETORESISTANCE EFFECT ELEMENT 有权
标题翻译：磁性随机存取存储器，其写入方法和磁阻效应元件
公开(公告)号：US20100214826A1
公开(公告)日：2010-08-26
申请号：US12678538
申请日：2008-07-07
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/82 , H01L43/08
摘要： A magnetic random access memory includes: a first ferromagnetic layet; an insulating layer provided adjacent to the first ferromagnetic layer; and a first magnetization pinned layer provided adjacent to the insulating layer on a side opposite to the first ferromagnetic layer. The first ferromagnetic layer includes a magnetization free region, a first magnetization pinned region, and a second magnetization pinned region. The magnetization free region has reversible magnetization, and overlaps with the second ferromagnetic layer. The first magnetization pinned region has first pinned magnetization, and is connected to a part of the magnetization free region. The second magnetization pinned region has second pinned magnetization, and is connected to a part of the magnetization free region. The first ferromagnetic layer has magnetic anisotropy in a direction perpendicular to a film surface. The first pinned magnetization and the second pinned magnetization are pinned antiparallel to each other in the direction perpendicular to the film surface.
摘要翻译：磁性随机存取存储器包括：第一铁磁层; 与所述第一铁磁层相邻设置的绝缘层; 以及在与第一铁磁层相反的一侧与绝缘层相邻设置的第一磁化固定层。第一铁磁层包括无磁化区域，第一磁化固定区域和第二磁化固定区域。无磁化区域具有可逆磁化强度，并与第二铁磁层重叠。第一磁化钉扎区域具有第一钉扎磁化，并且连接到无磁化区域的一部分。第二磁化钉扎区域具有第二钉扎磁化，并且连接到无磁化区域的一部分。第一铁磁层在垂直于膜表面的方向上具有磁各向异性。第一钉扎磁化和第二钉扎磁化在垂直于膜表面的方向上彼此反平行地被钉住。

9. 发明授权

US08787076B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08787076B2
公开(公告)日：2014-07-22
申请号：US13061299
申请日：2009-08-13
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
IPC分类号： G11C11/14 , G11C11/16 , G11C19/08 , H01L43/08
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841 , H01L27/228 , H01L43/08
摘要： A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.
摘要翻译：根据本发明的磁存储器具有：第一底层; 第二底层如此形成在第一底层上以与第一底层接触; 以及形成在第二底层上以与第二底层接触的数据存储层。数据存储层由具有垂直磁各向异性的铁磁材料制成。数据存储层的磁化状态由电流驱动畴壁运动改变。

10. 发明申请

US20110297909A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20110297909A1
公开(公告)日：2011-12-08
申请号：US13145082
申请日：2010-01-28
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L27/22 , H01L43/02
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
摘要翻译：磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域，并且其中可以切换磁化。第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。

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