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1. 发明授权

US5248630A Thin film silicon semiconductor device and process for producing thereof 失效
标题翻译：薄膜硅半导体器件及其制造方法
公开(公告)号：US5248630A
公开(公告)日：1993-09-28
申请号：US857944
申请日：1992-03-26
申请人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
发明人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
IPC分类号： H01L21/205 , H01L21/321 , H01L29/04 , H01L29/786
CPC分类号： H01L29/04 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/321 , H01L29/78675 , Y10S438/909
摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
摘要翻译：根据本发明的设置在基板上的薄膜硅半导体器件包括晶格常数小于单晶晶格和小晶粒尺寸的薄多晶硅薄膜。该薄多晶硅膜可以通过溅射沉积法将薄的非晶硅膜沉积在具有3.5Pa或更低的压力的惰性气体中并在10秒或更短的时间内退火薄的非晶硅膜来获得，多结晶。包括这种具有小晶格常数的薄多晶硅膜的薄膜硅半导体器件具有包括100cm 2 / Vxs或更高的载流子迁移率的优异特性。

2. 发明授权

US5132754A Thin film silicon semiconductor device and process for producing thereof 失效
标题翻译：薄膜硅半导体器件及其制造方法
公开(公告)号：US5132754A
公开(公告)日：1992-07-21
申请号：US222966
申请日：1988-07-21
申请人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
发明人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/321 , H01L21/324 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/78 , H01L29/786
CPC分类号： H01L29/04 , H01L21/02381 , H01L21/02422 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/02609 , H01L21/0262 , H01L21/321 , H01L29/78675
摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.

3. 发明授权

US5905647A Inverter with incorporated filter circuit and improved component cooling arrangement 失效
标题翻译：具有并入滤波电路的变频器和改进的部件冷却装置
公开(公告)号：US5905647A
公开(公告)日：1999-05-18
申请号：US1586
申请日：1997-12-31
申请人： Seiichi Shirai
发明人： Seiichi Shirai
IPC分类号： H02M7/00 , H02M7/44
CPC分类号： H02M7/003 , H05K7/20909
摘要： An inverter includes an inverter circuit, a rectifier circuit, a filter circuit including an input side capacitor, a coil, and an output side capacitor, the filter circuit being disposed at a front stage of the rectifier circuit, a casing accommodating the inverter circuit, the rectifier circuit and the filter circuit, a first cooling chamber defined in the casing, a second cooling chamber defined in the casing and partitioned by a partition wall from the first cooling chamber so as to be adjacent to it, a plurality of vent holes formed in the partition wall, and a fan for supplying a cooling air into the first cooling chamber and further via the vent holes into the second cooling chamber. The inverter circuit is cooled by the cooling air flowing into the first cooling chamber and the coil of the filter circuit is cooled by the cooling air flowing through the second cooling chamber.
摘要翻译：逆变器包括逆变器电路，整流电路，包括输入侧电容器，线圈和输出侧电容器的滤波电路，滤波电路设置在整流电路的前级，容纳逆变器电路的壳体，整流电路和滤波器电路，限定在壳体中的第一冷却室，限定在壳体中并与第一冷却室隔开的分隔壁相隔离的第二冷却室，形成多个通气孔以及用于将冷却空气供给到第一冷却室中并进一步经由通气孔进入第二冷却室的风扇。逆变器电路被流入第一冷却室的冷却空气冷却，并且过滤回路的线圈被流经第二冷却室的冷却空气冷却。

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