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    • 2. 发明授权
    • Excimer laser dopant activation of backside illuminated CCD's
    • 准分子激光掺杂剂激活背面照射CCD
    • US5688715A
    • 1997-11-18
    • US514922
    • 1995-08-14
    • Douglas A. SextonStephen D. RussellRonald E. ReedyEugene P. Kelley
    • Douglas A. SextonStephen D. RussellRonald E. ReedyEugene P. Kelley
    • G01R31/311H01L21/3065H01L27/148H01L31/0236H01L21/263
    • H01L21/3065H01L27/1464H01L27/14806H01L31/0236G01R31/311Y02E10/50Y10S148/09
    • A method uses an excimer laser to activate previously implanted dopant species in the backside of a backside-illuminated CCD or to incorporate dopant ions from a gaseous ambient into the backside of a backside-illuminated CCD and simultaneously activate. The controlled ion implantation of the backside and subsequent thin layer heating by the short wavelength pulsed excimer laser energy activates the dopant and provides for an improved dark current response and improved spectral response. The energy of the pulsed excimer laser is applied uniformly across a backside-illuminated CCD in a very thin layer of the semiconductor substrate (usually silicon) material that requires annealing to uniformly activate the dopant. The very thin layer of the material can be heated to exceedingly high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Repair of semiconductor dies by effecting a uniform annealing enables salvage and utilization of otherwise discardable components by bringing their dark current response to within an acceptable range.
    • 一种方法使用准分子激光器激活背面照射的CCD的背面中的先前注入的掺杂物质,或者将来自气体环境的掺杂剂离子掺入背面照射的CCD的背面并同时激活。 通过短波长脉冲准分子激光能量的背侧和随后的薄层加热的受控离子注入激活掺杂剂并提供改进的暗电流响应和改进的光谱响应。 将脉冲准分子激光器的能量均匀地涂覆在半导体衬底(通常是硅)材料的非常薄的背面照射的CCD中,其需要退火以均匀地激活掺杂剂。 该材料的非常薄的层可以以纳秒级时间刻度加热至非常高的温度,同时大部分精细CCD基板保持在低温。 通过进行均匀退火对半导体管芯进行修复,可使其暗电流响应在可接受的范围内,从而能够回收和利用其他可丢弃元件。
    • 3. 发明授权
    • Laser texturing
    • 激光纹理
    • US5164324A
    • 1992-11-17
    • US589839
    • 1990-09-26
    • Stephen D. RussellDouglas A. SextonEugene P. Kelley
    • Stephen D. RussellDouglas A. SextonEugene P. Kelley
    • H01L21/3065H01L31/0236
    • H01L31/0236H01L21/3065Y02E10/50
    • A non-contact method to impart a texture to a surface using laser irradiation uses an excimer laser to illuminate a sample immersed in a halocarbon ambient thereby initiating a photo/thermal chemical reaction which etches the sample only in the area illuminated with sufficient laser fluence. The resulting etched area can be repetively illuminated and etched to provide a textured surface to reduce extraneous reflections, or for micromachining, decorative texturing and marking. This technique is particularly well suited to improve the performance of backside illuminated CCDs by reducing the background (dark) signal, increase resolution and responsivity uniformity. The technique is compatible with other laser processing procedures and can be implemented with a variety of CCD enhancements such as improved dark current and blue response from laser doping or activation of backside implants. The non-corrosive nature of the halocarbon ambients allows the laser texturing process to be performed on pre-packaged, pre-tested devices and therefore can salvage parts which had failed performance specifications. This process therefore can improve device performance as well as yield, reliability and fabrication costs.
    • 使用激光照射赋予表面纹理的非接触方法使用准分子激光器照射浸在卤化碳环境中的样品,从而引发光/热化学反应,其仅在以足够的激光注量照射的区域中蚀刻样品。 所得到的蚀刻区域可以被重复照明和蚀刻以提供织构化的表面,以减少外部反射,或用于微加工,装饰纹理和标记。 该技术特别适用于通过减少背景(暗)信号,提高分辨率和响应度均匀性来改善背面照射CCD的性能。 该技术与其他激光加工程序兼容,可以通过各种CCD增强实现,例如改进的暗电流和激光掺杂的蓝色响应或背面植入物的激活。 卤代烃环境的非腐蚀性质允许激光纹理化工艺在预先打包的预先测试的装置上进行,因此能够打捞具有不良性能规格的部件。 因此,该过程可以提高设备性能以及产量,可靠性和制造成本。
    • 4. 发明授权
    • Laser texturing
    • 激光纹理
    • US5322988A
    • 1994-06-21
    • US919686
    • 1992-07-27
    • Stephen D. RussellDouglas A. SextonEugene P. Kelley
    • Stephen D. RussellDouglas A. SextonEugene P. Kelley
    • H01L21/3065H01L31/0236B23K26/00
    • H01L21/3065B01D53/007B01J19/121H01L31/0236Y02E10/50
    • A non-contact method to impart a texture to a surface using laser irradian uses an excimer laser to illuminate a sample immersed in a halocarbon ambient thereby initiating a photo/thermal chemical reaction which etches the sample only in the area illuminated with sufficient laser fluence. The resulting etched area can be repetively illuminated and etched to provide a textured surface to reduce extraneous reflections, or for micromachining, decorative texturing and marking. This technique is particularly well suited to improve the performance of backside illuminated CCDs by reducing the background (dark) signal, increase resolution and responsivity uniformity. The technique is compatible with other laser processing procedures and can be implemented with a variety of CCD enhancements such as improved dark current and blue response from laser doping or activation of backside implants. The noncorrosive nature of the halocarbon ambients allows the laser texturing process to be performed on pre-packaged, pre-tested devices and therefore can salvage parts which had failed performance specifications. This process therefore can improve device performance as well as yield, reliability and fabrication costs.
    • 使用激光照射赋予表面纹理的非接触方法使用准分子激光器照射浸在卤化碳环境中的样品,从而引发光/热化学反应,其仅在以足够的激光注量照射的区域中蚀刻样品。 所得到的蚀刻区域可以被重复照明和蚀刻以提供织构化的表面,以减少外部反射,或用于微加工,装饰纹理和标记。 该技术特别适用于通过减少背景(暗)信号,提高分辨率和响应度均匀性来改善背面照射CCD的性能。 该技术与其他激光加工程序兼容,可以通过各种CCD增强实现,例如改进的暗电流和激光掺杂的蓝色响应或背面植入物的激活。 卤碳化合物环境的非腐蚀性质允许激光纹理化工艺在预先包装的预先测试的装置上进行,因此可以打捞具有不良性能规格的部件。 因此,该过程可以提高设备性能以及产量,可靠性和制造成本。
    • 5. 发明授权
    • Method of making integrated circuit to package electrical connections
after encapsulation with an organic polymer
    • 使用有机聚合物封装后制造集成电路封装电连接的方法
    • US5061657A
    • 1991-10-29
    • US557449
    • 1990-07-18
    • William D. QueenEugene P. Kelley
    • William D. QueenEugene P. Kelley
    • H01L21/48H01L21/60H01L23/29H05K3/10
    • H01L24/81H01L21/4846H01L23/293H01L2224/05554H01L2224/45015H01L2224/45124H01L2224/45144H01L2224/49171H01L2224/81801H01L24/45H01L24/49H01L2924/01013H01L2924/01079H01L2924/14H05K3/105Y10T29/49146
    • A method of making electrical connections between integrated circuit contacts (16) and package contacts (18) which are more reliable and less expensive to produce is disclosed. First, an integrated circuit (10) is positioned in the cavity (12) of a package (14). Then the contacts (16) of the integrated circuit (10) and the contacts (18) of the package (14) are covered with a layer of a non-conducting organic polymer (20). Finally, a conductive path (22) is formed between the contacts (16) of the integrated circuit (10) and the contacts (18) of the package (14). Any suitable non-conductive organic polymer (20) can be used including polyaniline, polypyrrole, polythiophene, polyacetylene, poly(p-phenylene-sulfide) and poly(2,6-dimethylphenylene-oxide). The non-conducting organic polymer (20) can be applied by any suitable technique including application as a pre-formed film, deposition by electrochemical methods or deposition by low pressure chemical vapor deposition. The polymer (20) can even be applied as a solvent reduced solution with subsequent evaporation of the solvent (curing). The conductive path ( 22) can be formed in the layer of non-conducting polymer (20) by any suitable method including chemical doping, focused ion beam doping, and direct ion beam doping. The device may be protected by additional layers of non-conducting polymer (24) and a cover (26).
    • 公开了一种在集成电路触点(16)和封装触点(18)之间进行电连接的方法,其更可靠且更便宜地生产。 首先,将集成电路(10)定位在封装(14)的空腔(12)中。 然后,集成电路(10)的触点(16)和封装(14)的触点(18)被非导电有机聚合物(20)层覆盖。 最后,在集成电路(10)的触点(16)和封装(14)的触头(18)之间形成导电路径(22)。 可以使用任何合适的非导电有机聚合物(20),包括聚苯胺,聚吡咯,聚噻吩,聚乙炔,聚(对亚苯基硫化物)和聚(2,6-二甲基亚苯基氧化物)。 非导电有机聚合物(20)可以通过任何合适的技术施加,包括作为预成型膜的应用,通过电化学方法沉积或通过低压化学气相沉积沉积。 甚至可以将聚合物(20)作为溶剂还原溶液施加,随后蒸发溶剂(固化)。 导电路径(22)可以通过包括化学掺杂,聚焦离子束掺杂和直接离子束掺杂的任何合适的方法形成在非导电聚合物(20)的层中。 该装置可以被另外的非导电聚合物层(24)和盖(26)保护。
    • 6. 发明授权
    • Method of making integrated circuit to package connections
    • 制造集成电路封装连接的方法
    • US5119173A
    • 1992-06-02
    • US714813
    • 1991-06-13
    • William D. QueenEugene P. Kelley
    • William D. QueenEugene P. Kelley
    • H01L21/48H01L21/60H01L23/29H05K3/10
    • H01L24/81H01L21/4846H01L23/293H01L24/75H01L2224/05554H01L2224/45015H01L2224/45124H01L2224/45144H01L2224/49171H01L2224/75H01L2224/81801H01L24/45H01L24/49H01L2924/00014H01L2924/01013H01L2924/01079H01L2924/14H05K3/105
    • A method of making electrical connections between integrated circuit conts (16) and package contacts (18) which are more reliable and less expensive to produce is disclosed. First, an integrated circuit (10) is positioned in the cavity (12) of a package (14). Then the contacts (16) of the integrated circuit (10) and the contacts (18) of the package (14) are covered with a layer of a non-conducting organic polymer (20). Finally, a conductive path (22) is formed between the contacts (16) of the integrated circuit (10) and the contacts (18) of the package (14). Any suitable non-conductive organic polymer (20) can be used including polyaniline, polypyrrole, polythiophene, polyacetylene, poly (p-phenylene-sulfide) and poly (2,6-dimethylhenylene-oxide). The non-conducting organic polymer (20) can be applied by any suitable technique including application as a pre-formed film, deposition by electrochemical methods or deposition by low pressure chemical vapor deposition. The polymer (20) can even be applied as a solvent reduced solution with subsequent evaporation of the solvent (curing). The conductive path (22) can be formed in the layer of non-conducting polymer (20) by any suitable method including chemical doping, focused ion beam doping, and direct ion beam doping. The device may be protected by additional layers of non-conducting polymer (24) and a cover (26).
    • 公开了一种在集成电路触点(16)和封装触点(18)之间进行电连接的方法,其更可靠且更便宜地生产。 首先,将集成电路(10)定位在封装(14)的空腔(12)中。 然后,集成电路(10)的触点(16)和封装(14)的触点(18)被非导电有机聚合物(20)层覆盖。 最后,在集成电路(10)的触点(16)和封装(14)的触头(18)之间形成导电路径(22)。 可以使用任何合适的非导电有机聚合物(20),包括聚苯胺,聚吡咯,聚噻吩,聚乙炔,聚(对亚苯基硫醚)和聚(2,6-二甲苯基氧化物))。 非导电有机聚合物(20)可以通过任何合适的技术施加,包括作为预成型膜的应用,通过电化学方法沉积或通过低压化学气相沉积沉积。 甚至可以将聚合物(20)作为溶剂还原溶液施加,随后蒸发溶剂(固化)。 导电路径(22)可以通过包括化学掺杂,聚焦离子束掺杂和直接离子束掺杂的任何合适的方法形成在非导电聚合物(20)的层中。 该装置可以被另外的非导电聚合物层(24)和盖(26)保护。