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1. 发明授权

US07648861B2 Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region 有权
标题翻译：制造半导体器件的方法包括在第一半导体区域上分别形成含有杂质元素的第二半导体膜
公开(公告)号：US07648861B2
公开(公告)日：2010-01-19
申请号：US11193513
申请日：2005-08-01
申请人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L21/00
CPC分类号： H01L27/1277 , H01L27/1214 , H01L27/124 , H01L27/1251 , H01L27/1288
摘要： The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials.According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.
摘要翻译：本发明提供一种制造半导体器件的方法，该半导体器件具有能够高速操作的反交错TFT，其阈值变化很小。此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。根据本发明，通过形成反交错的TFT来制造半导体器件，该TFT通过使用高耐热材料形成栅电极，沉积非晶半导体膜，向非晶半导体膜中加入催化元素并加热非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，通过利用部分形成半导体区域形成与半导体区域电连接的源电极和漏电极，形成与栅电极连接的栅极布线。

2. 发明申请

US20060027804A1 Display device, manufacturing method thereof, and television set 有权
公开(公告)号：US20060027804A1
公开(公告)日：2006-02-09
申请号：US11187988
申请日：2005-07-25
申请人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L29/04
CPC分类号： H01L21/02667 , G02F1/1368 , G02F2202/104 , H01L21/2022 , H01L21/2026 , H01L27/124 , H01L27/1277 , H01L27/1292 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L51/56
摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.

3. 发明申请

US20060189047A1 Television, electronic apparatus, and method of fabricating semiconductor device 有权
标题翻译：电视机，电子设备以及制造半导体器件的方法
公开(公告)号：US20060189047A1
公开(公告)日：2006-08-24
申请号：US11193513
申请日：2005-08-01
申请人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L21/84
CPC分类号： H01L27/1277 , H01L27/1214 , H01L27/124 , H01L27/1251 , H01L27/1288
摘要： [Object] The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials. [Means for Solving the Problem] According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.
摘要翻译：本发明提供了一种制造具有能够高速操作的反交错TFT的半导体器件的方法，其具有极小的阈值变化。此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。解决问题的手段根据本发明，通过形成逆交错TFT来制造半导体器件，该TFT是使用高耐热材料形成栅电极，沉积非晶半导体膜，将催化元素添加到非晶半导体膜并加热非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，形成通过利用晶体半导体膜的一部分形成半导体区域，形成与半导体区域电连接的源电极和漏电极，以及形成与栅电极连接的栅极布线。

4. 发明授权

US07564058B2 Display device, manufacturing method thereof, and television set 有权
标题翻译：显示装置及其制造方法以及电视机
公开(公告)号：US07564058B2
公开(公告)日：2009-07-21
申请号：US11187988
申请日：2005-07-25
申请人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L27/14
CPC分类号： H01L21/02667 , G02F1/1368 , G02F2202/104 , H01L21/2022 , H01L21/2026 , H01L27/124 , H01L27/1277 , H01L27/1292 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L51/56
摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.
摘要翻译：提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法，其中以高效率使用材料并且需要少量的光掩模。本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层，形成在栅极电极层上的栅极绝缘层，形成在栅极绝缘层上的结晶半导体层，具有一个导电性的半导体层形成为与结晶半导体层接触的类型，源电极层和漏极电极层，形成为与具有一种导电类型的半导体层接触，在源极电极层，漏极电极层和像素电极之后形成绝缘体在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层，形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层，开口和第二开口以电连接源极电极层或漏极电极呃到像素电极层。

5. 发明申请

US20060046336A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20060046336A1
公开(公告)日：2006-03-02
申请号：US11205220
申请日：2005-08-17
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
摘要翻译：本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。

6. 发明授权

US07800113B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07800113B2
公开(公告)日：2010-09-21
申请号：US11826815
申请日：2007-07-18
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
摘要翻译：本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。

7. 发明申请

US20070262318A1 Method for manufacturing display device 有权
公开(公告)号：US20070262318A1
公开(公告)日：2007-11-15
申请号：US11826815
申请日：2007-07-18
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.

8. 发明授权

US07247529B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07247529B2
公开(公告)日：2007-07-24
申请号：US11205220
申请日：2005-08-17
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
摘要翻译：本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。

9. 发明授权

US07691685B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07691685B2
公开(公告)日：2010-04-06
申请号：US10579800
申请日：2005-01-24
申请人： Shinji Maekawa , Shunpei Yamazaki , Hironobu Shoji
发明人： Shinji Maekawa , Shunpei Yamazaki , Hironobu Shoji
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/288 , G02F2001/136295 , H01L21/76838 , H01L27/12 , H01L27/1292 , H01L29/41733 , H01L29/42384 , H01L29/4908
摘要： In the present circumstances, a film formation method of using spin coating in a manufacturing process is heavily used. As increasing the substrate size in future, the film formation method of using spin coating becomes at a disadvantage in mass production since a mechanism for rotating a large substrate becomes large, and there is many loss of material solution or waste liquid. According to the present invention, in a manufacturing process of a semiconductor device, a microscopic wiring pattern can be realized by delivering selectively photosensitive conductive material solution by droplet discharging, exposing selectively to laser light or the like, and developing. The present invention can reduce drastically costs since a patterning process can be shortened and an amount of material in a process of forming a conductive pattern can be reduced. Accordingly, the present invention can be applied to manufacture a large substrate.
摘要翻译：在目前的情况下，大量使用在制造工序中使用旋涂的成膜方法。随着将来基板尺寸的增加，使用旋涂的成膜方法由于大型基板的旋转机构变大而成为大规模生产的缺点，因此材料溶液或废液的损耗大。根据本发明，在半导体器件的制造工艺中，可通过选择性地通过液滴放电来选择性地输送感光性导电材料溶液，选择性地曝光于激光等并进行显影来实现微观布线图案。本发明可以降低显着的成本，因为可以缩短图案化处理，并且可以减少形成导电图案的工艺中的材料量。因此，本发明可以应用于制造大型基板。

10. 发明授权

US07732818B2 Display device, manufacturing method thereof, and television receiver 失效
标题翻译：显示装置及其制造方法以及电视接收机
公开(公告)号：US07732818B2
公开(公告)日：2010-06-08
申请号：US12100083
申请日：2008-04-09
申请人： Shinji Maekawa , Shunpei Yamazaki , Hironobu Shoji
发明人： Shinji Maekawa , Shunpei Yamazaki , Hironobu Shoji
IPC分类号： H01L27/12
CPC分类号： H01L27/12 , H01L27/1285 , H01L27/1292
摘要： The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode.
摘要翻译：本发明公开了一种制造显示装置的方法，包括以下步骤：使用感光材料在衬底上形成第一胶片图形，形成第二胶片图案，使第一胶片图案通过照射激光曝光将第二膜图案的表面修改为液滴脱落表面，通过通过液滴喷射方法将导电材料排放到液滴脱落表面的外边缘来形成源电极和漏极，并形成半导体区域，栅极绝缘膜和源电极和漏电极上的栅电极。

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