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    • 1. 发明授权
    • Electron source and image display apparatus
    • 电子源和图像显示装置
    • US07944137B2
    • 2011-05-17
    • US12552840
    • 2009-09-02
    • Shingo EguchiYasushi ShimizuNoriaki Oguri
    • Shingo EguchiYasushi ShimizuNoriaki Oguri
    • H01J1/62
    • H01J1/316H01J31/127H01J2201/3165H01J2329/0489
    • There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 Ω/square and not more than 1×1013 Ω/square.
    • 提供了根据本发明的电子源,其具有多个电子发射器件,其中每个电子发射器件具有一对电极,以及设置在该对之间的具有各自的电子发射部分的多个导电膜 的电极,以与所述一对电极电连接,所述电子源包括:短路抑制膜,其位于所述多个导电膜之间,并且设置在所述电子发射器件上以电连接到 一对电极,主要包含钨(W)和锗(Ge)氮化物,其中钨原子数与钨和锗原子数之比在短路抑制膜中为0.24以上,表面电阻率 的短路抑制膜不小于1×10 10Ω·OHgr·/平方并且不大于1×10 13Ω·平方。
    • 2. 发明申请
    • ELECTRON SOURCE AND IMAGE DISPLAY APPARATUS
    • 电子源和图像显示设备
    • US20100060126A1
    • 2010-03-11
    • US12552840
    • 2009-09-02
    • Shingo EguchiYasushi ShimizuNoriaki Oguri
    • Shingo EguchiYasushi ShimizuNoriaki Oguri
    • H01J61/94
    • H01J1/316H01J31/127H01J2201/3165H01J2329/0489
    • There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 Ω/square and not more than 1×1013 Ω/square.
    • 提供了根据本发明的电子源,其具有多个电子发射器件,其中每个电子发射器件具有一对电极,以及设置在该对之间的具有各自的电子发射部分的多个导电膜 的电极,以与所述一对电极电连接,所述电子源包括:短路抑制膜,其位于所述多个导电膜之间,并且设置在所述电子发射器件上以电连接到 一对电极,主要包含钨(W)和锗(Ge)氮化物,其中钨原子数与钨和锗原子数之比在短路抑制膜中为0.24以上,表面电阻率 的短路抑制膜不小于1×10 10Ω·OHgr·/平方并且不大于1×10 13Ω·平方。