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1. 发明专利

AT468610T 未知
公开(公告)号：AT468610T
公开(公告)日：2010-06-15
申请号：AT04811306
申请日：2004-11-17
申请人： SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE
IPC分类号： H01L27/14 , G02B6/12 , G02B6/122 , H01L31/00 , H01L31/0224 , H01L31/0232 , H01L31/0392 , H01L31/06 , H01L31/108 , H01L31/153
摘要： A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., "planar SOI layer") of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.

2. 发明专利

CA2557509C ACTIVE MANIPULATION OF LIGHT IN A SILICON-ON-INSULATOR (SOI) STRUCTURE 未知
公开(公告)号：CA2557509C
公开(公告)日：2014-09-30
申请号：CA2557509
申请日：2005-02-28
申请人： SIOPTICAL INC , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02F1/025 , G02B6/12 , H01L27/15
摘要： An arrangement for actively controlling, in two dimensions, the manipulation of light within an SOI-based optical structure utilizes doped regions formed within the SOI layer and a polysilicon layer of a silicon-insulator-silicon capacitive (SISCAP) structure. The regions are oppositely doped so as to form an active device, where the application of a voltage potential between the oppositely doped regions functions to modify the refractive index in the affected area and alter the properties of an optical signal propagating through the region. The doped regions may be advantageously formed to exhibit any desired "shaped" (such as, for example, lenses, prisms, Bragg gratings, etc.), so as to manipulate the propagating beam as a function of the known properties of these devices. One or more active devices of the present invention may be included within a SISCAP formed, SOI-based optical element (such as, for example, a Mach-Zehnder interferometer, ring resonator, optical switch, etc.) so as to form an active, tunable element.

4. 发明公开

EP1743376A4 ACTIVE MANIPULATION OF LIGHT IN A SILICON-ON-INSULATOR (SOI) STRUCTURE 有权转让
标题翻译： EINER SOI-STRUKTUR（SOI-硅绝缘体）中的吸附性
公开(公告)号：EP1743376A4
公开(公告)日：2012-05-30
申请号：EP05732990
申请日：2005-02-28
申请人： SIOPTICAL INC , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
发明人： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/26 , G02B6/10 , G02B6/12 , G02F1/025 , H01L27/14 , H01L27/15 , H01L29/22 , H01L31/00 , H01L33/00
CPC分类号： G02B6/12004 , G02F1/025 , G02F1/292 , G02F2001/294

5. 发明公开

EP1625679A4 HIGH SPEED, SILICON-BASED ELECTRO-OPTIC MODULATOR 有权转让
标题翻译：电光调制器HIGH SPEED硅基
公开(公告)号：EP1625679A4
公开(公告)日：2008-10-08
申请号：EP04751784
申请日：2004-05-10
申请人： SIOPTICAL INC , SHASTRI KALPENDU , GOTHOSKAR PRAKASH , GHIRON MARGARET , PATEL VIPULKUMAR , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
发明人： SHASTRI KALPENDU , GOTHOSKAR PRAKASH , GHIRON MARGARET , PATEL VIPULKUMAR , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC分类号： H04B10/155 , G02F1/01 , G02F1/015 , G02F1/025 , G02F1/225
CPC分类号： G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
摘要： An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.

7. 发明公开

EP1625615A4 CMOS-COMPATIBLE INTEGRATION OF SILICON-BASED OPTICAL DEVICES WITH ELECTRONIC DEVICES 有权转让
标题翻译： CMOS-KOMPATIBLE INTEGRATION VONSILIZIUMGESTÜTZTENOPTISCHEN BAUELEMENTEN MIT ELEKTRONISCHEN BAUELEMENTEN
公开(公告)号：EP1625615A4
公开(公告)日：2007-05-16
申请号：EP04750395
申请日：2004-04-21
申请人： SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
发明人： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC分类号： H01L21/76 , G02B6/12 , G02F1/025 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/146 , H01L31/12
CPC分类号： H01L27/14689 , G02B6/12004 , G02F1/025 , H01L21/84 , H01L27/1203 , H01L27/13 , H01L27/14636 , H01L27/14643 , H01L31/12
摘要： A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various required semiconductor layers then formed over the SOI layer. In some instances, a set of process steps may be used to simultaneously form regions in both electrical and optical devices. Advantageously, the same metallization process is used to provide electrical connections to the electrical devices and the active electro-optic devices.
摘要翻译：常规的CMOS制造技术被用于将无源光学器件和有源电光器件与标准CMOS电器件的形成集成在公共SOI结构上。电子器件和光学器件共享相同的表面SOI层（相对薄的单晶硅层），然后在SOI层上形成各种所需的半导体层。在一些情况下，可以使用一组处理步骤来同时在电和光学器件中形成区域。有利地，使用相同的金属化工艺来提供到电气设备和主动电光器件的电连接。

8. 发明申请

WO2005079258A3 SOI-BASED PHOTONIC BANDGAP DEVICES 审中-公开
标题翻译：基于SOI的光电带宽器件
公开(公告)号：WO2005079258A3
公开(公告)日：2006-06-01
申请号：PCT/US2005004123
申请日：2005-02-09
申请人： SIOPTICAL INC , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B26/00 , G02F1/00 , G02F1/025
CPC分类号： G02F1/025 , G02F2202/32
摘要： An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance also reduced as a consequence of using PBGs for lateral mode confinement.
摘要翻译：基于SOI的光子带隙（PBG）电光器件利用图案化的PBG结构来在SOI电光器件的有源波导区域内限定二维波导。在SOI结构中包含PBG柱状阵列导致在波导结构内提供光学模式的非常紧密的侧向约束，从而显着减少光学损耗。通过包括PBG结构，相关联的电触点可以放置在更接近有源区域而不影响光学性能，从而增加电光器件的切换速度。由于使用PBG用于横向模式限制，整个设备尺寸，电容和电阻也减小了。

9. 发明申请

WO2005077110A2 SILICON NANOTAPER COUPLERS AND MODE-MATCHING DEVICES 审中-公开
标题翻译：硅纳米粒子耦合器和模式匹配器件
公开(公告)号：WO2005077110A2
公开(公告)日：2005-08-25
申请号：PCT/US2005004507
申请日：2005-02-10
申请人： SIOPTICAL INC , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/122 , G02B6/14 , G02B6/26 , G02B6/34 , G02B6/42
CPC分类号： G02B6/1228 , G02B6/4204
摘要： An arrangement for providing optical coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer of a silicon-on-insulator (SOI) structure includes a silicon nanotaper structure formed in the upper silicon layer (SOI layer) of the SOI structure and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer, with a refractive index greater than the index of the dielectric insulating layer but less than the refractive index of silicon, is disposed so as to overly a portion of the dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space propagating optical signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement (such as a prism or grating) is disposed over the dielectric waveguide coupling layer and used to couple a propagating optical signal between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.
摘要翻译：用于在自由空间传播的光信号和形成在绝缘体上硅（SOI））结构的上硅层中的超薄硅波导之间提供光耦合的装置包括形成在上硅层（SOI层）中的硅纳米锥结构）和耦合到超薄硅波导。具有大于介电绝缘层的折射率但小于硅的折射率的折射率的介质波导耦合层被布置成过度地在介电绝缘层的一部分中的相关部分 SOI层已被去除。电介质波导耦合层的端部设置成与硅纳米锥的端部部分重叠以在自由空间传播的光信号和超薄硅波导之间形成模式转换区域。自由空间光耦合装置（诸如棱镜或光栅）设置在介质波导耦合层之上，用于将传播的光信号耦合在自由空间与介质波导耦合层之间，然后耦合到超薄硅波导中。

10. 发明申请

WO2005060689A3 EMI-EMC SHIELD FOR SILICON-BASED OPTICAL TRANSCEIVER 审中-公开
标题翻译：用于硅基光学收发器的EMI-EMC屏蔽
公开(公告)号：WO2005060689A3
公开(公告)日：2006-02-23
申请号：PCT/US2004042741
申请日：2004-12-17
申请人： SIOPTICAL INC , PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
发明人： PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/42 , G02B6/12
CPC分类号： G02B6/4277 , G02B6/42 , G02B6/4246
摘要： An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
摘要翻译：基于SOI的光电结构包括在单个SOI层内与其相关联的光学部件一起设置的各种电子部件，形成单片布置。通过在与SOI层相接的外部棱镜耦合器的表面上形成金属化的外层来提供EMI / EMC屏蔽，金属化层包括透明的孔，以允许光信号耦合到SOI层中。棱镜耦合器的相对表面也可以用金属材料涂覆以提供额外的屏蔽。此外，金属屏蔽板可以形成在SOI结构本身上，覆盖EMI敏感电子器件的位置。所有这些金属层最终被耦合到外部接地平面以隔离结构并提供必要的屏蔽。

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