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1. 发明公开

EP0844314A3 Distribution plate for a reaction chamber 失效
标题翻译：分配板用于反应室
公开(公告)号：EP0844314A3
公开(公告)日：2001-04-11
申请号：EP97309500.3
申请日：1997-11-25
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Roithner, Klaus , Poschenrieder, Bernhard , Muller, Karl Paul
IPC分类号： C23F4/00 , H01L21/00 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45561
摘要： The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.

2. 发明公开

EP0854510A3 Mask removal for etching a DRAM capacitor trench 失效
标题翻译：在DRAM的电容器的沟槽面膜去除
公开(公告)号：EP0854510A3
公开(公告)日：1999-09-08
申请号：EP97310402.9
申请日：1997-12-22
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Muller, Karl Paul , Poschenrieder, Bernhard , Roithner, Klaus
IPC分类号： H01L21/8242
CPC分类号： H01L27/10861 , H01L21/31116
摘要： A method for allowing the removal of a TEOS etch mask layer utilizing an anisotropic technique such as reactive ion etching. The use of the anisotropic technique results in substantially less undercutting of the pad oxide layer than wet chemical etching techniques. One embodiment of the invention involves forming a polysilicon etch stop layer under the pad TEOS layer.

3. 发明公开

EP0854510A2 Mask removal for etching a DRAM capacitor trench 失效
标题翻译： Entfernung einer Maske beimGrabenätzeneines DRAM-Kondensators
公开(公告)号：EP0854510A2
公开(公告)日：1998-07-22
申请号：EP97310402.9
申请日：1997-12-22
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Muller, Karl Paul , Poschenrieder, Bernhard , Roithner, Klaus
IPC分类号： H01L21/8242
CPC分类号： H01L27/10861 , H01L21/31116
摘要： A method for allowing the removal of a TEOS etch mask layer utilizing an anisotropic technique such as reactive ion etching. The use of the anisotropic technique results in substantially less undercutting of the pad oxide layer than wet chemical etching techniques. One embodiment of the invention involves forming a polysilicon etch stop layer under the pad TEOS layer.
摘要翻译：使用诸如反应离子蚀刻的各向异性技术来允许去除TEOS蚀刻掩模层的方法。与湿式化学蚀刻技术相比，使用各向异性技术导致焊盘氧化物层的底切显着减少。本发明的一个实施例涉及在焊盘TEOS层下方形成多晶硅蚀刻停止层。

4. 发明公开

EP0965889A2 Overlay measurement technique using moire patterns 审中-公开
标题翻译：用于确定所述对准测量装置莫尔设计
公开(公告)号：EP0965889A2
公开(公告)日：1999-12-22
申请号：EP99304651.5
申请日：1999-06-15
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Muller, Karl Paul , Prakash, Ventakatachalam C. , Gould, Christopher J.
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F7/70633
摘要： Misalignment between two masking steps used in the manufacture of semiconductive devices in a wafer is determined by having a special alignment pattern on each of two masks used in the process and forming images of the masks on the semiconductor devices with the images of the alignment patterns being superimposed over one another to form a Moire pattern. The Moire pattern is compared with other Moire patterns known to correspond to particular amounts of misalignment of the masks to see if it corresponds to an acceptable alignment.

5. 发明公开

EP0844314A2 Distribution plate for a reaction chamber 失效
标题翻译： Verteilerplattefüreine Reaktionskammer
公开(公告)号：EP0844314A2
公开(公告)日：1998-05-27
申请号：EP97309500.3
申请日：1997-11-25
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Roithner, Klaus , Poschenrieder, Bernhard , Muller, Karl Paul
IPC分类号： C23C16/44 , C23F4/00 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45561
摘要： The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.
摘要翻译：本发明是一种用于在反应室内安装反应物气体的装置。该装置能够用于气相沉积和蚀刻工艺中。该装置基本上补偿由气体耗尽引起的晶片边缘处的气相沉积和蚀刻不均匀的问题。具有延伸穿过其中的多个孔的气体分配板附接到反应室的内表面。至少一个真空密封隔板设置在气体分配板的表面和室的内表面之间。隔板将板和反应室之间的空间分隔成气体分配区。气体入口连接到每个气体分配区。每个气体入口管线具有至少一个质量流量控制器，其调节到每个气体分配区域的气体流量。质量流量控制器用于确保跨越基板表面的化学气相沉积或蚀刻的均匀速率。

6. 发明公开

EP0965889A3 Overlay measurement technique using moire patterns 审中-公开
标题翻译： Messtechnik zur Bestimmung der Ausrichtung mittelsMoiré-Motiven
公开(公告)号：EP0965889A3
公开(公告)日：2000-04-05
申请号：EP99304651.5
申请日：1999-06-15
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Muller, Karl Paul , Prakash, Ventakatachalam C. , Gould, Christopher J.
IPC分类号： G03F9/00 , G03F7/20 , H01L23/544
CPC分类号： G03F7/70633
摘要： Misalignment between two masking steps used in the manufacture of semiconductive devices in a wafer is determined by having a special alignment pattern on each of two masks used in the process and forming images of the masks on the semiconductor devices with the images of the alignment patterns being superimposed over one another to form a Moire pattern. The Moire pattern is compared with other Moire patterns known to correspond to particular amounts of misalignment of the masks to see if it corresponds to an acceptable alignment.
摘要翻译：通过在该过程中使用的两个掩模中的每个掩模上具有特殊的对准图案来确定用于制造晶片中的半导体器件的两个掩模步骤之间的对准，并且在半导体器件上形成掩模的图像，其中对准图案的图像为叠加在一起形成莫尔图案。将莫尔图案与已知对应于掩模的特定量的未对准的其它莫尔图案进行比较，以查看它是否对应于可接受的对准。

7. 发明公开

EP0762480A1 In-situ wafer temperature control apparatus for single wafer tools 失效
标题翻译： Vorrichtung zur In-situ Temperaturkontrolle eines WafersfürEinzelhalbleiterscheibewerkzeuge
公开(公告)号：EP0762480A1
公开(公告)日：1997-03-12
申请号：EP96112921.0
申请日：1996-08-09
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation , KABUSHIKI KAISHA TOSHIBA
发明人： Hasegawa, Isahiro , Muller, Karl Paul , Poschenrieder, Bernhard L. , Timme, Hans-Joerg , Van Kessel, Theodore
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , H01L21/67069
摘要： A temperature control apparatus for single wafer etching tools comprising a cathode electrode, an isolation layer, and chuck means, respectfully, which are vertically stacked to support a wafer to be etched. A layer of thermoelectric elements is disposed between the isolation layer and the chuck means. The layer of thermoelectric elements comprises a center area closed loop of connected Peltier elements and an outer area closed loop of connected Peltier elements. The center area closed loop is coupled to a power source and is arranged to correspond to the center area of the wafer. The outer area closed loop is coupled to a power source and is arranged to correspond to the outer area of the wafer. Accordingly, the temperatures associated with each of the specific areas of the wafer are individually controlled by one of the closed loops.
摘要翻译：一种用于单晶片蚀刻工具的温度控制装置，包括阴极电极，隔离层和卡盘装置，它们垂直堆叠以支撑待蚀刻的晶片。一层热电元件设置在隔离层和卡盘装置之间。热电元件层包括连接的珀耳帖元件的中心区域闭环和连接的珀耳帖元件的外部区域闭环。中心区闭环耦合到电源并且被布置成对应于晶片的中心区域。外部区域闭环耦合到电源并且被布置成对应于晶片的外部区域。因此，与晶片的每个特定区域相关联的温度由闭环之一单独控制。

8. 发明授权

EP0844314B1 Recation chamber containing a gas distribution plate 失效
标题翻译：反应室具有内置气体分配板
公开(公告)号：EP0844314B1
公开(公告)日：2004-02-11
申请号：EP97309500.3
申请日：1997-11-25
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Roithner, Klaus , Poschenrieder, Bernhard , Muller, Karl Paul
IPC分类号： C23F4/00 , H01L21/00 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45561

9. 发明公开

EP0905476A3 Method of end point detection for a wet etch process 审中-公开
标题翻译：一种用于检测在湿蚀刻工艺终点法
公开(公告)号：EP0905476A3
公开(公告)日：2000-10-25
申请号：EP98307808.0
申请日：1998-09-25
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Muller, Karl Paul , Penner, Klaus Dieter
IPC分类号： G01B11/06
CPC分类号： G01B11/0683
摘要： A process for monitoring and determining the end point of a wet etch process for removing a thin solid film 116 from a substrate by directing a light beam onto the substrate and monitoring the intensity of reflected beams, including the step of selecting a coherence length of the incoming beam 120 so that it is small enough so that no interference occurs in the liquid layer and large enough so that interference can occur in the thin solid film, i.e., light reflected from the interface between the liquid 118 and the top of the thin film, and light reflected from the interface between the bottom of the thin solid film and the substrate interferes. If the liquid layer is about 100 micrometers thick, and the thin film is about 1 micrometer thick, a coherence length of about 10 micrometers is suitable. Such coherence length can be provided with a suitable bandpass filter.

10. 发明公开

EP0905476A2 Method of end point detection for a wet etch process 审中-公开
标题翻译：在einemNassätzprozess的Verfahren zur Detektion des Endpunktes
公开(公告)号：EP0905476A2
公开(公告)日：1999-03-31
申请号：EP98307808.0
申请日：1998-09-25
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Muller, Karl Paul , Penner, Klaus Dieter
IPC分类号： G01B11/06
CPC分类号： G01B11/0683
摘要： A process for monitoring and determining the end point of a wet etch process for removing a thin solid film 116 from a substrate by directing a light beam onto the substrate and monitoring the intensity of reflected beams, including the step of selecting a coherence length of the incoming beam 120 so that it is small enough so that no interference occurs in the liquid layer and large enough so that interference can occur in the thin solid film, i.e., light reflected from the interface between the liquid 118 and the top of the thin film, and light reflected from the interface between the bottom of the thin solid film and the substrate interferes. If the liquid layer is about 100 micrometers thick, and the thin film is about 1 micrometer thick, a coherence length of about 10 micrometers is suitable. Such coherence length can be provided with a suitable bandpass filter.
摘要翻译：一种监测和确定湿式蚀刻工艺的终点的方法，用于通过将光束引导到衬底上并监测反射光束的强度从衬底移除薄的固体膜116，包括选择相干长度的步骤进入光束120使得其足够小，使得在液体层中不会发生干扰并且足够大，使得在薄的固体膜中可能发生干扰，即从液体118和薄膜的顶部之间的界面反射的光并且从薄固体膜的底部与基板之间的界面反射的光干涉。如果液体层的厚度约为100微米，薄膜的厚度约为1微米，约10微米的相干长度是合适的。这种相干长度可以提供合适的带通滤波器。

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